Abstract: Disclosed herein is a solid-state imaging element including: a plurality of unit pixels each having a photoelectric conversion part, a transfer part that transfers a charge generated by the photoelectric conversion part to a predetermined region, and a draining part that drains a charge in the predetermined region; a light shielding film being formed under an interconnect layer in the unit pixels and shield, from light, substantially the whole surface of the plurality of unit pixels except a light receiving part of the photoelectric conversion part; and a voltage controller controlling a voltage applied to the light shielding film. The voltage controller sets the voltage applied to the light shielding film to a first voltage in charge draining by the draining part and sets the voltage applied to the light shielding film to a second voltage higher than the first voltage in charge transfer by the transfer part.

Abstract: A CMOS image sensor in which column-parallel ADCs are mounted. Reference voltages Vref1 to Vref4 having slopes with different gradients and a reference voltage Vref5 are used. Additionally, a comparison circuit that compares an output voltage Vx of a unit pixel with any one of the reference voltages Vref1 to Vref4, and a comparison circuit that compares the one of the reference voltages Vref1 to Vref4 with the reference voltage Vref5 are included in a column processing circuit. High-resolution AD conversion is performed at a high speed by respective operations of the comparison circuits and an up/down counter.

Abstract: An image processing apparatus includes the following elements. An image input unit receives a long-time exposure image and a short-time exposure image. An image analysis unit detects a brightness-change pixel in which a brightness change has occurred during a photographic period on the basis of analysis of pixel values in the long-time exposure image and the short-time exposure image. A pixel value correction unit corrects a pixel value of the detected brightness-change pixel. In the pixel value correction unit, a combined image generator selectively combines pixel values in the long-time exposure image and pixel values in the short-time exposure image to generate a combined image; an intermediate image generator generates a blurred image of the combined image; and an output image generator determines a pixel value of the detected brightness-change pixel using a pixel value of a corresponding pixel in each of the combined image and the blurred image.

Abstract: A solid-state imaging element includes a plurality of semiconductor layers stacked, a plurality of stack-connecting parts for electrically connecting the plurality of semiconductor layers, a pixel array part in which pixel cells that include a photoelectric conversion part and a signal output part are arrayed in a two-dimensional shape, and an output signal line through which signals from the signal output part of the pixel cells are propagated, in which the plurality of semiconductor layers includes at least a first semiconductor layer and a second semiconductor layer, and, in the first semiconductor layer, the plurality of pixel cells are arrayed in a two-dimensional shape, the signal output part of a pixel group formed with the plurality of pixel cells shares an output signal line wired from the stack-connecting parts, and the output signal line has a separation part which can separate each output signal line.

Abstract: A solid-state image pickup device including: a pixel array portion; a differential circuit; a reset voltage supplying section; and a common phase feedback circuit.

Abstract: Disclosed herein is a solid-state imaging device, including: a pixel array unit configured to be formed by two-dimensionally arranging unit pixels each having a photoelectric converter, a charge-voltage converter, a reset transistor to set the charge-voltage converter to a predetermined potential, and an amplification transistor to read out a signal converted by the charge-voltage converter; a signal processor configured to process a signal output from the unit pixel by using a reference voltage; and a setter configured to set a reset level obtained from a second unit pixel from which a signal level has been already read out as the reference voltage of the signal processor before readout of a signal level based on a signal charge accumulated or retained in the charge-voltage converter from a first unit pixel.

Abstract: A solid-state imaging device includes: a pixel section in which pixels performing photoelectric conversion are arranged in a matrix shape; and a pixel signal reading section that has an AD conversion section which reads pixel signals through pixel units from the pixel section and performs analog digital (AD) conversion. The pixel signal reading section includes comparators each of which compares a reference signal, which is a ramp wave, with read analog signal potentials of pixels in a corresponding column, counter latches each of which is disposed to correspond to each of the comparators, is able to count a comparison time of the corresponding comparator, stops the count when an output of the corresponding comparator is inverted, and retains a corresponding count value, and an adjustment section that performs offset adjustment on the reference signal for each row on which the AD conversion is performed.

Abstract: High-resolution AD conversion can be performed at a high speed in a CMOS image sensor in which column-parallel ADCs are mounted. In a CMOS image sensor 10 in which column-parallel ADCs are mounted, reference voltages Vref1 to Vref4 having slopes with different gradients and a reference voltage Vref5 are used. Additionally, a comparison circuit 32 that compares an output voltage Vx of a unit pixel 11 with any one of the reference voltages Vref1 to Vref4, and a comparison circuit 33 that compares the one of the reference voltages Vref1 to Vref4 with the reference voltage Vref5 are included in a column processing circuit 15. High-resolution AD conversion is performed at a high speed by respective operations of the comparison circuits 32 and 33 and an up/down counter 34.

Abstract: When a middle voltage within a withstanding voltage of a transistor from a first voltage VL as a low voltage of a source voltage and a second voltage VH as a high voltage of the source voltage is represented by VM and a third voltage within the withstanding voltage of a transistor from the second voltage VH or the first voltage VL is represented by VS or VD, a driving circuit includes: a first transistor whose source electrode is connected to a node of the middle voltage VM; a second transistor whose source electrode is connected to the drain electrode of the first transistor and whose drain electrode is connected to an output terminal; and a controller applying a signal having an amplitude of a difference between the voltages VL and VH to the gate electrode of the first transistor and applying a signal having an amplitude of a difference between the voltages VS and VH or between the voltages VL and VD to the gate electrode of the second transistor.

Abstract: Disclosed herein is a solid-state imaging device employing a plurality of unit pixels each having an opto-electric conversion section configured to convert incident light into electric charge and an electric-charge holding section configured to hold a signal voltage representing the electric charge produced by the opto-electric conversion section, the solid-state imaging device further including a read section and a control section.

Abstract: Disclosed herein is a solid-state imaging device including a photoelectric conversion element operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof, an electric-charge holding region in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is held until read out, and a transfer gate having a complete transfer path through which the electric charge accumulated in the photoelectric conversion element is completely transferred into the electric-charge holding region, and an intermediate transfer path through which the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined charge amount is transferred into the electric-charge holding region. The complete transfer path and the intermediate transfer path are formed in different regions.

Abstract: A solid-state imaging device includes: a CMOS image sensor including a plurality of pixels disposed in an array and each including a light reception element, a discharging unit, a charge accumulation section, a transfer unit, a reset unit, an amplification unit, and a selection unit; and a control unit adapted to generate a selection pulse for rendering the selection unit operative to control operation of the CMOS image sensor.

Abstract: Disclosed herein is a solid-state image pickup apparatus, including a pixel array section in which a unit pixel including a photoelectric conversion section and a charge detection section for detecting charge generated by photoelectric conversion by the photoelectric conversion section is disposed; a driving section adapted to carry out driving of reading out a signal of the unit pixel divisionally by twice as a first signal and a second signal; and a signal processing section adapted to set the first signal read out first from the unit pixel as a reference voltage for a processable input voltage range of the signal processing section, adjust the reference voltage so that the first and second signals may be included in the input voltage range and carry out signal processing for the first and second signals using the adjusted reference voltage.

Abstract: Disclosed herein is a solid-state image taking apparatus, includes: a pixel array section including unit pixels laid out two-dimensionally to form a matrix to serve as unit pixels each employing an opto-electric conversion device, a transfer transistor, a first electric-charge accumulation section, a read transistor, a second electric-charge accumulation section, a reset transistor, and an amplification transistor; a driving section; and a correction section.

Abstract: Disclosed herein is a solid-state imaging device, including, a pixel array unit, driving means, signal processing means, level determining means and control means.

Abstract: A solid-state image pickup device including: a pixel array portion; a differential circuit; a reset voltage supplying section; and a common phase feedback circuit.

Abstract: A solid-state image pickup device including: a pixel array portion; a dummy pixel; a differential circuit; a reset voltage supplying section; and a common phase feedback circuit.

Abstract: A solid-state imaging device includes: a pixel array unit including unit pixels arranged in a matrix, each of the unit pixels having a photoelectric conversion element that converts a light signal to a signal charge, an amplifying transistor that amplifies and outputs the signal charge as a signal voltage, and a capacitive element whose one end is connected to a control electrode of the amplifying transistor; a driving means for selectively supplying a predetermined voltage to the other end of the capacitive element; and a signal processing circuit that performs a predetermined signal processing with respect to a signal output from each pixel of the pixel array unit.

Abstract: A solid-state imaging device includes: a pixel unit in which plural pixels that perform photoelectric conversion are arrayed in a matrix shape; and a pixel-signal readout unit that performs readout of pixel signals from the pixel unit in a unit of plural pixels, the pixel-signal readout unit including an AD conversion unit that performs analog-digital (AD) conversion, wherein the pixel-signal readout unit includes plural comparators that compare a reference signal as a ramp wave and readout analog signal potentials of the pixels in rows in which the comparators are provided, plural counter latches that are arranged to correspond to the plural comparators and capable of counting comparison times of the comparators corresponding thereto, stop the count when outputs of the comparators are inverted, and store values of the count, and an adjusting unit that performs offset adjustment for the reference signal every time the AD conversion is performed.

Abstract: A solid-state imaging device includes: a unit pixel including a photoelectric conversion section, an impurity-diffusion region capable of temporarily accumulating or holding electric charges generated by the photoelectric conversion section, and a reset transistor resetting the impurity-diffusion region by a voltage of a voltage-supply line, and having an impurity concentration such that at least the reset transistor side of the impurity-diffusion region becomes a depletion state; and a drive circuit changing the voltage of the voltage-supply line from a first voltage lower than a depletion potential of the reset transistor side of the impurity-diffusion region to a second voltage higher than the depletion potential while the reset transistor is on.