Abstract: A solid-state imaging device includes a pixel array section that has at least one pixel with a photoelectric conversion unit and a charge detection unit. A driving section is configured to read out a signal of the pixel, a first portion of said signal being based on signal charge, a second portion of said signal being based on a reset potential. A signal processing section is configured to read out the first portion of the signal as a reference voltage, with the reference voltage being adjusted to cause the first and second portions of the signal to be within an input voltage range.

Abstract: A solid-state imaging device, with (a) a pixel array unit including two-dimensionally arranged pixels each including (i) a photoelectric conversion element, (ii) a select transistor configured to perform pixel selection, and (iii) a charge discharging transistor configured to selectively discharge the charges accumulated in the photoelectric conversion element; and (b) driving circuitry operable to drive reading of output signals from the pixels of the pixel array unit, for each pixel the driving circuitry driving the charge discharging transistor using a select transistor driving signal

Abstract: A solid-state imaging element that includes a plurality of semiconductor layers stacked, a plurality of stack-connecting parts for electrically connecting the plurality of semiconductor layers, a pixel array part in which pixel cells that include a photoelectric conversion part and a signal output part are arrayed in a two-dimensional shape, and an output signal line through which signals from the signal output part of the pixel cells are propagated, in which the plurality of semiconductor layers includes at least a first semiconductor layer and a second semiconductor layer, and, in the first semiconductor layer, the plurality of pixel cells are arrayed in a two-dimensional shape, the signal output part of a pixel group formed with the plurality of pixel cells shares an output signal line wired from the stack-connecting parts, and the output signal line has a separation part which can separate each output signal line.

Abstract: A CMOS image sensor includes a plurality of pixel elements arranged in a two-dimensional array, analog signal multiplexers, over-sampling A/D converters and an activation code generator. The sensor is configured to construct an image by using less number of A/D conversions, thereby reducing the power consumption of the sensor. The activation code generator generates a bit stream of random binary sequences which determine which A/D converter is activated. The image sensor offers digitally compressed data, the number of which is significantly less than the total number of pixels. Further, the image sensor not only reduces the power consumption of the A/D converters (by reducing the number of A/D conversions) but also reduces the I/O power consumption. An original image focused on the sensor is recovered from the compressed data by using principles of compressed sensing.

Abstract: Disclosed herein is a solid-state imaging device, including, a pixel array unit, first driving means, second driving means, and third driving means.

Abstract: Disclosed is a digital-analog converter including a current generation section, a current source transistor bias voltage keeping section, a cascade transistor group switch section, and a conversion section. The current generation section has at least one current source transistor group including a plurality of current source transistors and generates an output current based on a value of a digital input signal. The current source transistor bias voltage keeping section has a plurality of cascade transistor groups each including cascade transistors connected in series to the current source transistors and keeps bias voltages of the current source transistors constant. The cascade transistor group switch section selects one of the plurality of cascade transistor groups. The conversion section performs current-voltage conversion of the output current supplied via the selected cascade transistor group.

Abstract: A solid-state imaging device, with (a) a pixel array unit including two-dimensionally arranged pixels each including (i) a photoelectric conversion element, (ii) a select transistor configured to perform pixel selection, and (iii) a charge discharging transistor configured to selectively discharge the charges accumulated in the photoelectric conversion element; and (b) driving circuitry operable to drive reading of output signals from the pixels of the pixel array unit, for each pixel the driving circuitry driving the charge discharging transistor using a select transistor driving signal.

Abstract: A solid-state imaging device including a unit pixel including a photoelectric conversion section, an impurity-diffusion region capable of temporarily accumulating or holding electric charges generated by the photoelectric conversion section, and a reset transistor resetting the impurity-diffusion region by a voltage of a voltage-supply line, and having an impurity concentration such that at least the reset transistor side of the impurity-diffusion region becomes a depletion state; and a drive circuit changing the voltage of the voltage-supply line from a first voltage lower than a depletion potential of the reset transistor side of the impurity-diffusion region to a second voltage higher than the depletion potential while the reset transistor is on.

Abstract: A CMOS image sensor has an image array as a matrix of unit pixels each including at least a photodiode, a memory for holding a charge stored in the photodiode, a floating diffusion region for converting the charge in the memory into a voltage, a first transfer gate for transferring the charge from the photodiode to the memory, a second transfer gate for transferring the charge from the memory to the floating diffusion region, and a resetting transistor for resetting the charge in the floating diffusion region. The unit pixels are driven to set the potential of a potential barrier at a boundary between the memory and the floating diffusion region to a potential such that a charge overflowing the memory is transferred to the floating diffusion region, when the first transfer gate is turned on. The CMOS image sensor operates in a global shutter mode for capturing moving images.

Abstract: A solid-state imaging device includes a pixel array section that has at least one pixel with a photoelectric conversion unit and a charge detection unit. A driving section is configured to read out a signal of the pixel, a first portion of said signal being based on signal charge, a second portion of said signal being based on a reset potential. A signal processing section is configured to read out the first portion of the signal as a reference voltage, with the reference voltage being adjusted to cause the first and second portions of the signal to be within an input voltage range.

Abstract: Provided is a signal processing apparatus, including: an A/D conversion unit configured to perform A/D conversion of a first signal, A/D conversion of a second signal, A/D conversion of a third signal, and A/D conversion of a fourth signal; and a correlated double sampling processing unit configured to generate a first output signal by performing correlated double sampling using a first digital data item obtained through the A/D conversion of the first signal, and a second digital data item obtained through the A/D conversion of the second signal, a second output signal by performing correlated double sampling using a third digital data item obtained through the A/D conversion of the third signal, and a fourth digital data item obtained through the A/D conversion of the fourth signal, and a third output signal by performing correlated double sampling using the first output signal and the second output signal.

Abstract: A semiconductor device is provided which has a driving circuit operable to drive a circuit that has a delay, the semiconductor device including: an auxiliary driving circuit operable to accelerate drive of the driving circuit, which receives a drive signal of the driving circuit as an input signal.

Abstract: A solid-state imaging device includes: a unit pixel including a photoelectric conversion section, an impurity-diffusion region capable of temporarily accumulating or holding electric charges generated by the photoelectric conversion section, and a reset transistor resetting the impurity-diffusion region by a voltage of a voltage-supply line, and having an impurity concentration such that at least the reset transistor side of the impurity-diffusion region becomes a depletion state; and a drive circuit changing the voltage of the voltage-supply line from a first voltage lower than a depletion potential of the reset transistor side of the impurity-diffusion region to a second voltage higher than the depletion potential while the reset transistor is on.

Abstract: A solid-state imaging element that includes a plurality of semiconductor layers stacked, a plurality of stack-connecting parts for electrically connecting the plurality of semiconductor layers, a pixel array part in which pixel cells that include a photoelectric conversion part and a signal output part are arrayed in a two-dimensional shape, and an output signal line through which signals from the signal output part of the pixel cells are propagated, in which the plurality of semiconductor layers includes at least a first semiconductor layer and a second semiconductor layer, and, in the first semiconductor layer, the plurality of pixel cells are arrayed in a two-dimensional shape, the signal output part of a pixel group formed with the plurality of pixel cells shares an output signal line wired from the stack-connecting parts, and the output signal line has a separation part which can separate each output signal line.

Abstract: Disclosed herein is a solid-state image taking apparatus, includes: a pixel array section including unit pixels laid out two-dimensionally to form a matrix to serve as unit pixels each employing an opto-electric conversion device, a transfer transistor, a first electric-charge accumulation section, a read transistor, a second electric-charge accumulation section, a reset transistor, and an amplification transistor; a driving section; and a correction section.

Abstract: A CMOS image sensor has an image array as a matrix of unit pixels each including at least a photodiode, a memory for holding a charge stored in the photodiode, a floating diffusion region for converting the charge in the memory into a voltage, a first transfer gate for transferring the charge from the photodiode to the memory, a second transfer gate for transferring the charge from the memory to the floating diffusion region, and a resetting transistor for resetting the charge in the floating diffusion region. The unit pixels are driven to set the potential of a potential barrier at a boundary between the memory and the floating diffusion region to a potential such that a charge overflowing the memory is transferred to the floating diffusion region, when the first transfer gate is turned on. The CMOS image sensor operates in a global shutter mode for capturing moving images.

Abstract: A solid-state imaging device including a photoelectric conversion element operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof, an electric-charge holding region in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is held until read out, and a transfer gate having a complete transfer path through which the electric charge accumulated in the photoelectric conversion element is completely transferred into the electric-charge holding region, and an intermediate transfer path through which the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined charge amount is transferred into the electric-charge holding region. The complete transfer path and the intermediate transfer path are formed in different regions.

Abstract: A solid-state imaging device includes a pixel array section that has at least one pixel with a photoelectric conversion unit and a charge detection unit. A driving section is configured to read out a signal of the pixel, a first portion of said signal being based on signal charge, a second portion of said signal being based on a reset potential. A signal processing section is configured to read out the first portion of the signal as a reference voltage, with the reference voltage being adjusted to cause the first and second portions of the signal to be within an input voltage range.

Abstract: A signal processing device and signal processing method are described herein. By way of example, the signal processing method includes a selection unit configured to select, based on a first comparison of an analog signal with a determination voltage, a selected reference voltage to be compared with the analog signal, the selected reference voltage being selected from a plurality of reference voltages. The plurality of reference voltages include at least a first reference voltage and a second reference voltage.

Abstract: The present invention is to provide an A/D conversion device, a solid-state image-capturing device, and an electronic device capable of removing fixed pattern noise, capable of preventing an image from being corrupted, capable of generating an appropriate carry signal during bit shift, and capable of avoiding bit inconsistency even when the frequency of the carry signal increases due to the bit shift.