Patents by Inventor Yusuke Oniki
Yusuke Oniki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230343595Abstract: A semiconductor device includes first and second semiconductor fins, a first gate structure, and a second gate structure. The first and second semiconductor fins respectively includes a first channel region and a second channel region, which the first and second gate structures are respectively on. The first gate structure includes a first silicon oxide layer on the first channel region, a first high-k dielectric layer on the first silicon oxide layer, and a first metal gate on the first high-k dielectric layer. The second gate structure includes a second silicon oxide layer on the second channel region, a second high-k dielectric layer on the second silicon oxide layer, and a second metal gate on the second high-k dielectric layer. The first silicon oxide layer has a Si4+ ion concentration greater than a Si4+ ion concentration of a bottom portion of the second silicon oxide layer.Type: ApplicationFiled: June 29, 2023Publication date: October 26, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Andrew Joseph KELLY, Yusuke ONIKI, Yasutoshi OKUNO, Ta-Chun MA
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Patent number: 11728169Abstract: A semiconductor device includes first and second semiconductor fins, a first gate structure, and a second gate structure. The first and second semiconductor fins respectively includes a first channel region and a second channel region, which the first and second gate structures are respectively on. The first gate structure includes a first silicon oxide layer on the first channel region, a first high-k dielectric layer on the first silicon oxide layer, and a first metal gate on the first high-k dielectric layer. The second gate structure includes a second silicon oxide layer on the second channel region, a second high-k dielectric layer on the second silicon oxide layer, and a second metal gate on the second high-k dielectric layer. The first silicon oxide layer has a Si4+ ion concentration greater than a Si4+ ion concentration of a bottom portion of the second silicon oxide layer.Type: GrantFiled: August 31, 2020Date of Patent: August 15, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Andrew Joseph Kelly, Yusuke Oniki, Yasutoshi Okuno, Ta-Chun Ma
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Patent number: 11600716Abstract: Methods for manufacturing semiconductor structures are provided. The method for manufacturing the semiconductor structure includes forming a fin structure protruding from a substrate and forming a source/drain structure over the fin structure. The method for manufacturing a semiconductor structure further includes forming a metallic layer over the source/drain structure and forming an oxide film on a sidewall of the source/drain structure. In addition, the oxide film and the metallic layer are both in direct contact with the source/drain structure.Type: GrantFiled: November 30, 2020Date of Patent: March 7, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Andrew Joseph Kelly, Yusuke Oniki
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Patent number: 11473682Abstract: A diaphragm valve includes: a valve body having formed therein a first valve chamber, a second valve chamber and a communication passage communicating between the two valve chambers; a valve seat formed in the communication passage; a valve mechanism including a diaphragm supporting a valve element that comes in contact with and separates from the valve seat and a second diaphragm; a pressurizing unit being configured to pressurize the first diaphragm so as to press the valve element against the valve seat; and a bonnet for holding an outer peripheral part of the second diaphragm between the bonnet and the valve body. The pressurizing unit is configured as a single integrated unit holding therein a movable body that moves in conjunction with the valve element via a stem.Type: GrantFiled: November 27, 2019Date of Patent: October 18, 2022Assignee: ASAHI YUKIZAI CORPORATIONInventors: Kenro Yoshino, Yusuke Oniki
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Patent number: 11367662Abstract: The disclosed technology generally relates to semiconductor devices and methods of forming the same. In one aspect, a method of forming a semiconductor device having a first field-effect transistor (FET) device and a second FET device comprises forming the first and second FET devices from a first stack and a second stack comprising a channel material arranged on a sacrificial material. The method can include forming first spacers at sidewalls of the first and second stacks, and forming a second spacer between the first spacers. After recessing of the sacrificial material and removal of the first spacers, gate structures may be formed, wrapping around the at least partly released channel portions. The gate structure of the first transistor device can be separated from the gate structure of the second transistor device by the second spacer.Type: GrantFiled: July 24, 2020Date of Patent: June 21, 2022Assignee: IM EC vzwInventors: Eugenio Dentoni Litta, Yusuke Oniki, Lars-Ake Ragnarsson, Naoto Horiguchi
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Patent number: 11289589Abstract: In a method for manufacturing a semiconductor device by using a gate replacement technology, a gate space constituted by dielectric material portions, in which a semiconductor fin channel layer is exposed, is formed. The surfaces of the dielectric material portions are made hydrophobic. A first dielectric layer is formed on the semiconductor fin channel layer, while maintaining the surfaces of the dielectric material portions hydrophobic. A surface of the formed first dielectric layer is hydrophilic. A first conductive layer is formed over the first dielectric layer, while maintaining the surfaces of the dielectric material portions hydrophobic. A second conductive layer is formed over the first conductive layer and on the hydrophobic surfaces of the dielectric material portions, thereby filling the gate space.Type: GrantFiled: September 28, 2020Date of Patent: March 29, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tetsu Ohtou, Yusuke Oniki
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Publication number: 20220049776Abstract: A diaphragm valve includes: a valve body having formed therein a first valve chamber, a second valve chamber and a communication passage communicating between the two valve chambers; a valve seat formed in the communication passage; a valve mechanism including a diaphragm supporting a valve element that comes in contact with and separates from the valve seat and a second diaphragm; a pressurizing unit being configured to pressurize the first diaphragm so as to press the valve element against the valve seat; and a bonnet for holding an outer peripheral part of the second diaphragm between the bonnet and the valve body. The pressurizing unit is configured as a single integrated unit holding therein a movable body that moves in conjunction with the valve element via a stem.Type: ApplicationFiled: November 27, 2019Publication date: February 17, 2022Inventors: Kenro YOSHINO, Yusuke ONIKI
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Publication number: 20210358812Abstract: A semiconductor integrated circuit (IC) including a first fin structure having a first aqueous soluble channel layer. The semiconductor IC includes a first gate structure over the first aqueous soluble channel layer, wherein the first gate structure includes a first oxide film directly contacting the first aqueous soluble channel layer, and the first oxide film includes a first material. The semiconductor IC includes a first spacer along the first gate structure, wherein a bottom surface of the first spacer is above an interface between the first oxide layer and the first aqueous soluble channel layer. The semiconductor IC includes a second fin structure having a second aqueous soluble channel layer. The semiconductor IC includes a second gate structure over the second aqueous channel layer, wherein the second gate structure includes a second oxide film directly contacting the second aqueous soluble channel layer, the second oxide film includes a second material.Type: ApplicationFiled: July 29, 2021Publication date: November 18, 2021Inventors: Kuo-Sheng CHUANG, You-Hua CHOU, Yusuke ONIKI
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Publication number: 20210351275Abstract: Example embodiments relate to counteracting semiconductor material loss during semiconductor structure formation. One embodiment includes a method for forming a semiconductor structure. The method includes providing a structure. The structure includes a substrate. The structure also includes a layer stack on the substrate. The layer stack includes at least one semiconductor layer of a semiconductor material and at least one sacrificial layer under the semiconductor layer. Further, the structure includes a trench through the layer stack. The further also includes forming a recess in the layer stack by etching a portion of the sacrificial layer exposed by the trench. The etching includes a preferential etch of the sacrificial layer with respect to the semiconductor layer. Additionally, the method includes epitaxially growing a liner of the semiconductor material onto surfaces of the semiconductor layer exposed by the trench.Type: ApplicationFiled: May 5, 2021Publication date: November 11, 2021Inventors: Kurt Wostyn, Yusuke Oniki, Hans Mertens
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Patent number: 11101178Abstract: A method including forming a first insulating film over a first fin structure. The method further includes removing the first insulating film to expose a portion of the first fin structure. The method further includes forming a first oxide film over the exposed portion of the first fin structure using a non-aqueous solvent-based chemical.Type: GrantFiled: May 20, 2019Date of Patent: August 24, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Kuo-Sheng Chuang, You-Hua Chou, Yusuke Oniki
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Patent number: 11101149Abstract: A method includes depositing a plurality of first semiconductor layers and a plurality of second semiconductor layers over a substrate, wherein the first semiconductor layers and the second semiconductor layers are stacked alternately; patterning the first and second semiconductor layers to form a fin structure; supplying a first bias to the substrate after patterning the first and second semiconductor layers; and etching the second semiconductor layers when the semiconductor substrate is supplied with the first bias, wherein etching the second semiconductor layers is performed such that the first semiconductor layers are suspended above the substrate.Type: GrantFiled: July 20, 2020Date of Patent: August 24, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Andrew Joseph Kelly, Yusuke Oniki
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Publication number: 20210083078Abstract: Methods for manufacturing semiconductor structures are provided. The method for manufacturing the semiconductor structure includes forming a fin structure protruding from a substrate and forming a source/drain structure over the fin structure. The method for manufacturing a semiconductor structure further includes forming a metallic layer over the source/drain structure and forming an oxide film on a sidewall of the source/drain structure. In addition, the oxide film and the metallic layer are both in direct contact with the source/drain structure.Type: ApplicationFiled: November 30, 2020Publication date: March 18, 2021Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Andrew Joseph KELLY, Yusuke ONIKI
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Publication number: 20210028068Abstract: The disclosed technology generally relates to semiconductor devices and methods of forming the same. In one aspect, a method of forming a semiconductor device having a first field-effect transistor (FET) device and a second FET device comprises forming the first and second FET devices from a first stack and a second stack comprising a channel material arranged on a sacrificial material. The method can include forming first spacers at sidewalls of the first and second stacks, and forming a second spacer between the first spacers. After recessing of the sacrificial material and removal of the first spacers, gate structures may be formed, wrapping around the at least partly released channel portions. The gate structure of the first transistor device can be separated from the gate structure of the second transistor device by the second spacer.Type: ApplicationFiled: July 24, 2020Publication date: January 28, 2021Inventors: Eugenio Dentoni Litta, Yusuke Oniki, Lars-Ake Ragnarsson, Naoto Horiguchi
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Publication number: 20210013327Abstract: In a method for manufacturing a semiconductor device by using a gate replacement technology, a gate space constituted by dielectric material portions, in which a semiconductor fin channel layer is exposed, is formed. The surfaces of the dielectric material portions are made hydrophobic. A first dielectric layer is formed on the semiconductor fin channel layer, while maintaining the surfaces of the dielectric material portions hydrophobic. A surface of the formed first dielectric layer is hydrophilic. A first conductive layer is formed over the first dielectric layer, while maintaining the surfaces of the dielectric material portions hydrophobic. A second conductive layer is formed over the first conductive layer and on the hydrophobic surfaces of the dielectric material portions, thereby filling the gate space.Type: ApplicationFiled: September 28, 2020Publication date: January 14, 2021Inventors: Tetsu OHTOU, Yusuke ONIKI
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Publication number: 20200395216Abstract: A semiconductor device includes first and second semiconductor fins, a first gate structure, and a second gate structure. The first and second semiconductor fins respectively includes a first channel region and a second channel region, which the first and second gate structures are respectively on. The first gate structure includes a first silicon oxide layer on the first channel region, a first high-k dielectric layer on the first silicon oxide layer, and a first metal gate on the first high-k dielectric layer. The second gate structure includes a second silicon oxide layer on the second channel region, a second high-k dielectric layer on the second silicon oxide layer, and a second metal gate on the second high-k dielectric layer. The first silicon oxide layer has a Si4+ ion concentration greater than a Si4+ ion concentration of a bottom portion of the second silicon oxide layer.Type: ApplicationFiled: August 31, 2020Publication date: December 17, 2020Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Andrew Joseph KELLY, Yusuke ONIKI, Yasutoshi OKUNO, Ta-Chun MA
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Patent number: 10854736Abstract: Methods for manufacturing semiconductor structures are provided. The method for manufacturing a semiconductor structure includes forming a source/drain structure over a substrate and forming a metal layer over the source/drain structure. The method for manufacturing a semiconductor structure further includes reacting a portion of the metal layer with the source/drain structure to form a metallic layer by using an etching solvent. In addition, the etching solvent includes (a) a first component and (b) a second component. The first component includes an acid, and the second component includes propylene carbonate (PC), ethylene carbonate (EC), diethyl carbonate (DEC), or a combination thereof.Type: GrantFiled: August 20, 2018Date of Patent: December 1, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Andrew Joseph Kelly, Yusuke Oniki
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Publication number: 20200350185Abstract: A method includes depositing a plurality of first semiconductor layers and a plurality of second semiconductor layers over a substrate, wherein the first semiconductor layers and the second semiconductor layers are stacked alternately; patterning the first and second semiconductor layers to form a fin structure; supplying a first bias to the substrate after patterning the first and second semiconductor layers; and etching the second semiconductor layers when the semiconductor substrate is supplied with the first bias, wherein etching the second semiconductor layers is performed such that the first semiconductor layers are suspended above the substrate.Type: ApplicationFiled: July 20, 2020Publication date: November 5, 2020Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Andrew Joseph KELLY, Yusuke ONIKI
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Patent number: 10790381Abstract: In a method for manufacturing a semiconductor device by using a gate replacement technology, a gate space constituted by dielectric material portions, in which a semiconductor fin channel layer is exposed, is formed. The surfaces of the dielectric material portions are made hydrophobic. A first dielectric layer is formed on the semiconductor fin channel layer, while maintaining the surfaces of the dielectric material portions hydrophobic. A surface of the formed first dielectric layer is hydrophilic. A first conductive layer is formed over the first dielectric layer, while maintaining the surfaces of the dielectric material portions hydrophobic. A second conductive layer is formed over the first conductive layer and on the hydrophobic surfaces of the dielectric material portions, thereby filling the gate space.Type: GrantFiled: December 23, 2019Date of Patent: September 29, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tetsu Ohtou, Yusuke Oniki
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Patent number: 10763114Abstract: A method of fabricating a semiconductor device includes forming a semiconductor fin comprising a channel region for a fin field effect transistor (finFET). A gate oxide layer is then formed on the channel. The gate oxide layer is treated with a nitrogen containing agent so as to form a nitrogenous layer and an interfacial layer. The nitrogenous layer is then removed. A high-k dielectric layer is formed on the interfacial layer. A metal gate is formed on the high-k dielectric layer. The nitrogenous layer is removed by rinsing the semiconductor fin with deionized water. The gate oxide and interfacial layer contains the same material.Type: GrantFiled: September 28, 2017Date of Patent: September 1, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Andrew Joseph Kelly, Yusuke Oniki, Yasutoshi Okuno, Ta-Chun Ma
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Patent number: 10720344Abstract: A method includes forming a semiconductor fin on a semiconductor substrate, the semiconductor fin comprising germanium, silicon, silicon germanium or any of III-V elements; forming a mask layer on a top portion of the semiconductor fin; and trimming the semiconductor fin, wherein trimming the semiconductor fin comprises: immersing the semiconductor substrate in a first electrolyte bath; and laterally removing a first portion of the semiconductor fin by supplying a first voltage to a counter electrode in the electrolyte bath and a second voltage to the semiconductor substrate, wherein the second voltage is negative.Type: GrantFiled: November 4, 2019Date of Patent: July 21, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Andrew Joseph Kelly, Yusuke Oniki