Abstract: There is provided a communication system, comprising: a base station unit that is mounted on a flight vehicle, forms a wireless communication area by radiating a beam to a ground, and communicates wirelessly with a user terminal in the wireless communication area; a processing server unit that is communicatively connected to the base station unit and provides a service to the user terminal in the wireless communication area: a closed-network core unit that provides a mobile communication service of a closed-area network in the wireless communication area formed by the base station unit. The processing server unit may be mounted on the flight vehicle and the closed-network core unit may be arranged in a closed-network core apparatus arranged on the ground.

Abstract: A disc spring which is used by arranging a plurality of the disk springs in an axial direction along a central axis includes an annular body plate portion that has an inner peripheral surface and an other peripheral surface which gradually extend toward one side in the axial direction from an outside toward an inside in a radial direction, and a stopper portion that protrudes from the body plate portion in a direction intersecting the inner peripheral surface and the outer peripheral surface of the body plate portion, in which in a case where an axial compression load is applied to a spring member in which a plurality of the disc springs are arranged in the axial direction, the stopper portion abuts another disk spring adjacent in the axial direction or a support member supporting an axial end portion of the spring member, the body plate portion and the stopper portion are integrally formed, and both axial end edges of the stopper portion are positioned inside both axial end edges of the body plate portion in

Abstract: An attachment structure for a deformation absorption member of a fuel-cell-stack includes a first raised piece raised from one surface of a base material in a grid pattern, and having an extension portion extending from a proximal end, the extension portion abutting at least one of the cathode side separator or the anode side separator, a second raised piece having a proximal end, and a joint portion formed by partially joining a location between the proximal end of the first raised piece and the proximal end of the second raised piece, proximal end of the first raised piece being adjacent the proximal end of the second raised piece in a second direction that intersects a first direction taken from the proximal end of the first raised piece to an extension portion side, to the at least one of the anode side separator and the cathode side separator.

Abstract: A plate spring member having a compressive residual stress distribution in which a compressive residual stress of at least part of a portion having a depth from a surface within 50 ?m is 500 MPa or more, and the compressive residual stress of a portion having a depth from the surface exceeding 50 ?m is less than 500 MPa.

Abstract: A disc spring which is used by arranging a plurality of the disc springs in an axial direction along a central axis includes an annular body plate portion that has an inner peripheral surface and aa outer peripheral surface which gradually extend toward one side in the axial direction from an outside toward an inside in a radial direction, and a stopper portion that protrudes from the body plate portion in a direction intersecting the inner peripheral surface and the outer peripheral surface of the body plate portion, in which in a case where an axial compression load is applied to a spring member in which a plurality of the disc springs are arranged in the axial direction, the stopper portion abuts another disc spring adjacent in the axial direction or a support member supporting an axial end portion of the spring member, the body plate portion and the stopper portion are integrally formed, and both axial end edges of the stopper portion are positioned inside both axial end edges of the body plate portion in

Abstract: A plate spring member having a compressive residual stress distribution its which a compressive residual stress of at least part of a portion having a depth from a surface within 50 ?m is 500 MPa or more, and the compressive residual stress of a portion having a depth from the surface exceeding 50 ?m is less than 500 MPa.

Abstract: A fuel cell stack has a stacked plurality of single cells. Each of the single cells has a membrane electrode assembly, and a pair of separators sandwiching the membrane electrode assembly therebetween. A cooling fluid channel where a cooling fluid flows is formed between adjacent single cells. The fuel cell stack further comprises a displacement absorbing member disposed in the cooling fluid channel to absorb a displacement between the single cells. The displacement absorbing member comprises a channel flow resistance reduction structure that reduces a channel flow resistance of the cooling fluid channel against the cooling fluid.

Abstract: A deformation absorption member for a fuel-cell-stack disposed between an anode side separator and a cathode side separator. The deformation absorption member includes a thin-board-like base material, and a plurality of raised pieces in which extension portions extended from proximal ends are arranged in a grid pattern. Each raised piece of the plurality of raised pieces is formed in a non-rectangular shape in which the width of the extension portion is shorter than the width of the proximal end, and plurality of raised pieces are configured so that the directions of the extension portions of mutually adjacent raised pieces are alternately arranged, and positions of the proximal ends of the mutually adjacent raised pieces are arranged in at least overlapping positions.

Abstract: In an LCD driver, in a high voltage resistant MISFET, end portions of a gate electrode run onto electric field relaxing insulation regions. Wires to become source wires or drain wires are formed on an interlayer insulation film of the first layer over the high voltage resistant MISFET. At this moment, when a distance from an interface between a semiconductor substrate and a gate insulation film to an upper portion of the gate electrode is defined as “a”, and a distance from the upper portion of the gate electrode to an upper portion of the interlayer insulation film on which the wires are formed is defined as “b”, a relation of a>b is established. In such a high voltage resistant MISFET structured in this manner, the wires are arranged so as not to be overlapped planarly with the gate electrode of the high voltage resistant MISFET.

Abstract: Provided is a disk spring which has a spring portion having a circular disk shape, the spring portion to be interposed between a pair of rotary members, for example an outer plate and a piston, being relatively movable in an axial direction to come close to and separate away from each other, wherein the spring portion has a rounded cross-section portion to be brought into contact with, for example, the outer plate, and a straight cross-section portion being continuous to the rounded cross-section portion and being formed on at least one of an inner diameter side and an outer diameter side of the spring portion so as to be allowed to be brought into contact with, for example, the piston and be compressed between both the rotary members in a close contact state.

Abstract: A fuel-cell-stack manufacturing method, includes arranging an extension portion extended from a proximal end of a raised piece on one surface of a base material disposed so as to abut at least one of a cathode side separator and the anode side separator, and setting an interval between the anode side separator and the cathode side separator along a lamination direction so that deformation of the raised piece exceeds an elastic deformation region and enters a plastic deformation region, and is also in a region in which the proximal end moved due to the deformation does not come in contact with the cathode side separator or the anode side separator.

Abstract: A pressure structure which is arranged between a first pressed body and a second pressed body facing the first pressed body and applies a pressure to the first pressed body and the second pressed body includes: a first spring member including a center portion which is in contact with the first pressed body, two end portions, each of which is in contact with the second pressed body, and two arm portions which extend from the center portion toward the different end portions; and a second spring member including a center portion which is in contact with the second pressed body, two end portions, each of which is in contact with the first pressed body, and two arm portions which extend from the center portion toward the different end portions.

Abstract: In an LCD driver, in a high voltage resistant MISFET, end portions of a gate electrode run onto electric field relaxing insulation regions. Wires to become source wires or drain wires are formed on an interlayer insulation film of the first layer over the high voltage resistant MISFET. At this moment, when a distance from an interface between a semiconductor substrate and a gate insulation film to an upper portion of the gate electrode is defined as “a”, and a distance from the upper portion of the gate electrode to an upper portion of the interlayer insulation film on which the wires are formed is defined as “b”, a relation of a>b is established. In such a high voltage resistant MISFET structured in this manner, the wires are arranged so as not to be overlapped planarly with the gate electrode of the high voltage resistant MISFET.

Abstract: In an LCD driver, in a high voltage resistant MISFET, end portions of a gate electrode run onto electric field relaxing insulation regions. Wires to become source wires or drain wires are formed on an interlayer insulation film of the first layer over the high voltage resistant MISFET. At this moment, when a distance from an interface between a semiconductor substrate and a gate insulation film to an upper portion of the gate electrode is defined as “a”, and a distance from the upper portion of the gate electrode to an upper portion of the interlayer insulation film on which the wires are formed is defined as “b”, a relation of a>b is established. In such a high voltage resistant MISFET structured in this manner, the wires are arranged so as not to be overlapped planarly with the gate electrode of the high voltage resistant MISFET.

Abstract: Provided is a disk spring which has a spring portion having a circular disk shape, the spring portion to be interposed between a pair of rotary members, for example an outer plate and a piston, being relatively movable in an axial direction to come close to and separate away from each other, wherein the spring portion has a rounded cross-section portion to be brought into contact with, for example, the outer plate, and a straight cross-section portion being continuous to the rounded cross-section portion and being formed on at least one of an inner diameter side and an outer diameter side of the spring portion so as to be allowed to be brought into contact with, for example, the piston and be compressed between both the rotary members in a close contact state.

Abstract: In an LCD driver, in a high voltage resistant MISFET, end portions of a gate electrode run onto electric field relaxing insulation regions. Wires to become source wires or drain wires are formed on an interlayer insulation film of the first layer over the high voltage resistant MISFET. At this moment, when a distance from an interface between a semiconductor substrate and a gate insulation film to an upper portion of the gate electrode is defined as “a”, and a distance from the upper portion of the gate electrode to an upper portion of the interlayer insulation film on which the wires are formed is defined as “b”, a relation of a>b is established. In such a high voltage resistant MISFET structured in this manner, the wires are arranged so as not to be overlapped planarly with the gate electrode of the high voltage resistant MISFET.

Abstract: In an LCD driver, in a high voltage resistant MISFET, end portions of a gate electrode run onto electric field relaxing insulation regions. Wires to become source wires or drain wires are formed on an interlayer insulation film of the first layer over the high voltage resistant MISFET. At this moment, when a distance from an interface between a semiconductor substrate and a gate insulation film to an upper portion of the gate electrode is defined as “a”, and a distance from the upper portion of the gate electrode to an upper portion of the interlayer insulation film on which the wires are formed is defined as “b”, a relation of a>b is established. In such a high voltage resistant MISFET structured in this manner, the wires are arranged so as not to be overlapped planarly with the gate electrode of the high voltage resistant MISFET.

Abstract: An attachment structure for a deformation absorption member of a fuel-cell-stack includes a first raised piece raised from one surface of a base material in a grid pattern, and having an extension portion extending from a proximal end, the extension portion abutting at least one of the cathode side separator or the anode side separator, a second raised piece having a proximal end, and a joint portion formed by partially joining a location between the proximal end of the first raised piece and the proximal end of the second raised piece, proximal end of the first raised piece being adjacent the proximal end of the second raised piece in a second direction that intersects a first direction taken from the proximal end of the first raised piece to an extension portion side, to the at least one of the anode side separator and the cathode side separator.

Abstract: A pressure structure which is arranged between a first pressed body and a second pressed body facing the first pressed body and applies a pressure to the first pressed body and the second pressed body includes: a first spring member including a center portion which is in contact with the first pressed body, two end portions, each of which is in contact with the second pressed body, and two arm portions which extend from the center portion toward the different end portions; and a second spring member including a center portion which is in contact with the second pressed body, two end portions, each of which is in contact with the first pressed body, and two arm portions which extend from the center portion toward the different end portions.

Abstract: The present invention provides a wave spring and a load adjusting method therefor in which a ratio of a spring constant can be freely adjusted. In a wave spring, a high mountain portion and a low mountain portion form a combination, and the combination is repeatedly formed along a circumferential direction. A valley portion is formed between the mountain portions. Since distance between mountain portions is constant in the conventional design of wave springs, the ratios of spring constant are only specific values (plot indicated by ?). In contrast, in the design of the wave spring, since the pitch angle A of the high mountain portion and the pitch angle B of the low mountain portion can be changed in the combination, the ratio can be freely adjusted.