Abstract: An automatic transaction apparatus includes: a money handling assembly configured to handle money including banknotes and coins; a first display above the money handling assembly, the first display facing a first direction and the first display to display a first screen for input of a transaction instruction; a second display above the money handling assembly, the second display facing a second direction which is opposite the first direction, and the second display to display a second screen for input of a transaction instruction; and an operation device that faces the second direction, the operation device on which an operation for performing electronic settlement of a monetary amount corresponding to a transaction input to the second display is performed.

Abstract: A money handling apparatus includes a banknote handling assembly, a coin handling assembly, and a first operation surface having a banknote inlet portion, a banknote outlet portion, a coin inlet portion, and a coin outlet portion and facing a front direction in a front-back direction of the money handling apparatus. The banknote inlet portion and the coin inlet portion are aligned and the banknote outlet portion and the coin outlet portion are aligned in a right-left direction of the money handling apparatus, which is perpendicular to the front-back direction. The banknote inlet portion and the banknote outlet portion overlap and the coin inlet portion and the coin outlet portion overlap in the up-down direction of the money handling apparatus, which is perpendicular to the right-left direction and perpendicular to the front-back direction.

Abstract: A method includes providing a semiconductor substrate and forming a fin protruding from the semiconductor substrate. The method includes forming a silicon-containing layer over the fin. The method further includes patterning the silicon-containing layer to form a gate structure over the fin, where patterning the silicon-containing layer is implemented using an etchant and a passivant that includes a silicon-containing gas and a nitrogen-containing gas.

Abstract: A method of processing a substrate that includes: forming a bottom passivation layer including an oxide over a first portion of a dielectric layer at a bottom of a recess of the substrate, the recess having sidewalls including a second portion of the dielectric layer; and performing a lateral etch to etch the second portion of the dielectric layer, the bottom passivation layer covering the first portion of the dielectric layer during the lateral etch, and where the forming of the bottom passivation layer includes exposing the substrate to a first plasma including a halogen, and exposing the substrate to a second plasma including oxygen to form the bottom passivation layer.

Abstract: A method includes providing a semiconductor substrate and forming a dielectric layer over the semiconductor substrate. The method includes forming a metal layer over the dielectric layer. The method includes forming a patterned mask over the metal layer. The method includes performing a first etching process using a first etchant to form metal patterns separated by trenches in the metal layer. The method further includes performing a second etching process using a second etchant and a passivant to extend the trenches in the dielectric layer, resulting in a passivation layer formed along sidewalls of the metal patterns.

Abstract: A coin processing device includes: a first storage and a second storage each configured to store a coin; a transport configured to transport the coin; an outlet configured to dispense the coin to outside; and a controller configured to execute a first operation of transmitting the coin stored in the first storage so as to store the coin in the second storage, and a second operation of dispensing the coin stored in the second storage from the outlet, wherein the controller executes the first operation in a period after execution of the second operation until a start of the next second operation, and wherein a timing of execution of the first operation can be changed in a period after execution of the second operation until a start of the next second operation.

Abstract: A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers that is located on a front side of a source layer, memory openings vertically extending through the alternating stack, memory opening fill structures located in the memory openings, a dielectric material portion laterally offset from the alternating stack, a connection via structure vertically extending through the dielectric material portion and contacting a front side surface of a metallic plate, and a backside contact pad in electrical contact with the metallic plate.

Abstract: A binding machine includes: a wire feeding unit configured to feed a wire; a curl forming unit configured to form a path along which the wire fed by the wire feeding unit is to be wound around a to-be-bound object; a butting part against which the to-be-bound object is to be butted; a cutting unit configured to cut the wire wound on the to-be-bound object; a binding unit configured to twist the wire wound on the to-be-bound object and cut by the cutting unit; and a tension applying part configured to apply tension to the wire to be cut at the cutting unit with a force higher than a force applied in a loosening direction of the wire wound on the to-be-bound object.

Abstract: A terminal block includes: a base plate; a first fixing portion arranged on the base plate, to which an end portion of a first bus bar is fixed; a first wall portion erected on the base plate and forming an extension path of the first bus bar; a second fixing portion arranged on the base plate side by side with the first fixing portion, to which an end portion of a second bus bar is fixed; and a second wall portion erected on the base plate and forming an extension path of the second bus bar. The first wall portion has a first interference region preventing arrangement of the second bus bar to the first fixing portion, and the second wall portion has a second interference region preventing arrangement of the first bus bar to the second fixing portion.

Abstract: A circular annular seal ring made from a resin is adapted to be disposed between an outer member and an inner member that rotate relative to each other. The seal ring is disposed in a circumferential groove of the outer member or the inner member to isolate a liquid space from an external space. The seal ring is formed from an elongated and arcuate rod to define a circle by joining ends of the rod, and has a junction formed from the ends. The seal ring has a radial thickness gradually decreasing from two points that are apart from the junction toward the junction. The points are separated from the junction by an angle of not less than 60 degrees and not more than 150 degrees about a central axis of the circle.

Abstract: A vacuum processing apparatus includes a processing unit comprising a processing chamber disposed in a vacuum container, a detector detecting a thickness of the target film on a wafer or an end point during the processing of the wafer using a light from the wafer, the detector being functioned to detect the thickness or the end point by comparing a data pattern of obtained in advance indicating light intensities of a plurality of wavelengths related to the film thickness using the wavelength as a parameter and a real data pattern indicating the light intensities of the plurality of wavelengths obtained at a particular time during the processing, and the data pattern being obtained by dividing differential coefficient value of time-series data of the light intensities of the plurality of wavelengths by time-series data indicating values of the light intensities of the plurality of wavelengths.

Abstract: A circular annular seal ring made from a resin is adapted to be disposed between an outer member and an inner member that rotate relative to each other. The seal ring is disposed in a circumferential groove of the outer member or the inner member to isolate a liquid space from an external space. The seal ring is formed from an elongated and arcuate rod to define a circle by joining ends of the rod, and has a junction formed from the ends. The seal ring has a radial thickness gradually decreasing from two points that are apart from the junction toward the junction. The points are separated from the junction by an angle of not less than 60 degrees and not more than 150 degrees about a central axis of the circle.

Abstract: A compression molding die includes a first mold and a second mold. The first mold includes a bottom surface member and a side surface member. A space is providable in the first mold by a step of at least one of an outer peripheral surface of the bottom surface member and an inner peripheral surface of the side surface member. The first mold includes a gas inlet capable of introducing gas into the space, a gas outlet through which the gas introduced into the space is dischargeable, and a seal member below the space.

Abstract: A method for fabricating a semiconductor device includes forming a pattern of trenches by etching a first layer formed over an underlying layer of a substrate, each of the trenches having an aspect ratio (AR) in a range with a lower limit of a first AR and an upper limit of a second AR, the pattern including a low-AR trench having the first AR and a high-AR trench having the second AR, the AR of a trench being a ratio of its depth to its opening width, the etching including: executing a first recipe in a plasma chamber to anisotropically etch the first layer for a first duration by flowing etchants through the chamber, an etch rate of the first layer being higher on the low-AR trench relative to that on the high-AR trench; and after executing the first recipe, executing a second recipe in the plasma chamber to etch the first layer anisotropically and concurrently deposit oxygen-containing etch byproducts to passivate exposed portions of sides of the trenches, the etch rate of the first layer being lower on th

Abstract: In order to drop a coin into an opening formed in a transport path for sorting coins, a coin handling apparatus includes: a transport path having a transport surface in which the opening for dropping a coin is formed; a conveyor configured to transport a coin on the transport surface along the transport path; a gate including a plurality of members configured to move between a closed position for closing the opening such that a coin transported by the conveyor is not dropped into the opening, and an opened position for opening the opening such that the coin is dropped into the opening; and a drive motor configured to drive the plurality of members to control the gate to move between the closed position and the opened position.

Abstract: A binding machine includes a magazine configured to accommodate a wire, a wire feeding portion configured to feed the wire accommodated in the magazine, a curl forming portion configured to constitute an annular feeding path for winding the wire fed by the wire feeding portion around a binding object, and a binding portion configured to twist the wire wound around the binding object. The curl forming portion includes a curling guide that curls the wire fed by the wire feeding portion, and a leading guide that leads the wire curled by the curling guide to the binding portion. The magazine includes a feeding path forming portion that forms a feeding path of the wire, and a regulating portion that regulates movement of the wire in a direction intersecting a direction in which the wire is fed in the feeding path forming portion.

Abstract: An outer structure of a magnetic circuit is held inside a holder recess of a magnetic circuit holder of a frame. A pressing portion is screw-fixed to a mounting surface of the magnetic circuit holder. Elastically deformable pressing arms are formed at the pressing portion, and the pressing arms press a restriction surface of the outer structure of the magnetic circuit.

Abstract: Residue at the base of a feature in a substrate to be etched is limited so that improved profiles may be obtained when forming vertical, narrow pitch, high aspect ratio features, for example fin field effect transistor (FinFET) gates. A thin bottom layer of the feature is formed of a different material than the main layer of the feature. The bottom material may be comprised of a material that preferentially etches and/or preferentially oxidizes as compared to the main layer. The bottom layer may comprise silicon germanium. The preferential etching characteristics may provide a process in which un-etched residuals do not remain. Even if residuals remain, after etch of the feature, an oxidation process may be performed. Enhanced oxidation rates of the bottom material allow any remaining residual to be oxidized. Plasma oxidation may be used. The oxidized material may then be removed by utilizing standard oxide removal mechanisms.

Abstract: A method for processing a substrate that includes: depositing a filling material over the substrate including a first recess and a second recess, the filling material filling the first recess and the second recess; patterning the filling material such that the first recess is reopened while the second recess remains filled with the filling material; filling the first recess with a conductive material to a first height; etching the filling material selectively to the conductive material to reopen the second recess; filling a remainder of the first recess and the second recess with the conductive material; and performing an etch back process to etch the conductive material such that the first recess and the second recess are filled with the conductive material to a second height.

Abstract: A binding machine includes: a wire feeding unit; a curl forming unit; a butting part; a cutting unit; and a binding unit. The binding unit includes: a rotary shaft; a wire engaging body configured to move in an axis direction of the rotary shaft and to engage the wire in a first operation area in the axis direction, and to move in the axis direction and to twist the wire in a second operation area in the axis direction; a rotation regulation part; and a tension applying part configured to perform, in the second operation area, an operation of applying tension on the wire engaged by the wire engaging body in the first operation area. The tension applied to the wire is equal to or larger than 10% and equal to or smaller than 50% with respect to a maximum tensile load of the wire.