Abstract: Embodiments are described herein that form silicon germanium nano-wires while reducing or eliminating erosion of nitride layers (e.g., masks and spacers) caused during selective etching of silicon with respect to silicon germanium during formation of silicon germanium nano-wires. oxide layers are used to protect nitride layers during formation of silicon germanium (SiGe) nano-wires. In particular, multilayer spacers including oxide/nitride/oxide layers are formed to protect the nitride layers during selective silicon etch processes that are used to form silicon germanium nano-wires, for example, for field effect transistors (FETs). The multilayer spacers allow for target levels of erosion to be achieved for the nitride layers.

Abstract: A plasma processing apparatus is provided that is configured to supply a gas into a chamber, generate a plasma from the gas using a power of an electromagnetic wave, and perform a predetermined plasma process on a substrate that is held by a mounting table. The plasma processing apparatus includes a dielectric window through which the electromagnetic wave that is output from an electromagnetic wave generator is propagated and transmitted into the chamber, a support member that supports the dielectric window, a partition member that separates a space where the support member is arranged from a plasma generation space and includes a protrusion abutting against the dielectric window, and a conductive member that is arranged between the partition member and the dielectric window and is protected from being exposed to the plasma generation space by the protrusion.

Abstract: A decoration panel used as an operation button includes a decoration section between a front translucent member and a rear translucent member, and the decoration section includes a counter reflection layer superposed on a rear face of a light-shield layer. A rear reflection layer is provided between the rear translucent member and a translucent member for illumination. The decoration section is displayed as if floating at an intermediate position in a depth direction. In addition, a surface of the decoration section oriented to the rear side constitutes a counter reflection surface.

Abstract: A module includes a charging circuit and a driven unit. The charging circuit includes a power generation element and an electric storage element. The power generation element is connected to the electric storage element to charge the electric storage element. The electric storage element is connected to the driven unit to drive the driven unit with electric power stored. The power-generating voltage of the power generation element has a value equal to or more than the charging voltage of the electric storage element. The electric storage element is a secondary battery including a lithium-transition metal oxide in a positive electrode active material layer, and a lithium-titanium oxide of spinel-type crystal structure in a negative electrode active material layer.

Abstract: Plasma ion energy distribution for ions having different masses is controlled by controlling the relationship between a base RF frequency and a harmonic RF frequency. By the controlling the RF power frequencies, characteristics of the plasma process may be changed based on ion mass. The ions that dominate etching may be selectively based upon whether an ion is lighter or heavier than other ions. Similarly, atomic layer etch processes may be controlled such that the process may be switched between a layer modification step and a layer etch step though adjustment of the RF frequencies. Such switching is capable of being performed within the same gas phase of the plasma process. The control of the RF power includes controlling the phase difference and/or amplitude ratios between a base RF frequency and a harmonic frequency based upon the detection of one or more electrical characteristics within the plasma apparatus.

Abstract: Multiple harmonic frequency components are used for plasma excitation in a plasma process. Relative amplitude and/or phase shift between the different frequency components is controlled so as to provide desired ion energy plasma properties. The relative amplitude and/or phase shift may be controlled without direct and/or manual ion energy measurements. Rather, the ion energy within the plasma may be dynamically controlled by monitoring one or more electrical characteristics within the plasma apparatus, such as for example, impedance levels, electrical signals in the radio frequency (RF) generator, electrical signals in a the matching networks, and electrical signals in other circuits of the plasma processing apparatus. The monitoring and control of the ion energy may be accomplished dynamically during the plasma process so as to maintain a desired ion energy distribution.

Abstract: Disclosed is a coin handling apparatus 1 including: a transport unit 8 including a transport disk which moves a coin along a coin track; sorting units each of which sorts the coin when the coin falls into any of openings; a fall detector which detects the opening into which the coin has fallen; a motor which allows the transport disk to rotate; and a controller (controller) which stops the motor upon determining an occurrence of a transport error in the coin track, and identifies the opening into which the coin has fallen after the stop of the motor and during recovery from the transport error based on a detection result of the fall detector.

Abstract: An electric power tool includes a driving unit generating a driving force by electricity and various components functioning by electricity, a circuit board on which a control unit configured to control the driving unit and the various components is mounted, a plurality of connectors connecting a plurality of wirings, which extend from the driving unit and the various components, with a plurality of wirings, which extend from the circuit board, a body portion installed therein with the driving unit, the various components, the circuit board and the plurality of connectors, and a receiving portion which receives the plurality of connectors therein and which is fixed to the body portion.

Abstract: A plasma processing apparatus includes a processing chamber, a table disposed in the processing chamber, a dielectric window provided at the processing chamber, and a surrounding body made of a dielectric material surrounding a processing space between the table and the dielectric window. The dielectric window and the surrounding body are separated from each other in a vertical direction with a predetermined gap therebetween.

Abstract: A decoration panel used as an operation button includes a decoration section between a front translucent member and a rear translucent member, and the decoration section includes a counter reflection layer superposed on a rear face of a light-shield layer. A rear reflection layer is provided between the rear translucent member and a translucent member for illumination. The decoration section is displayed as if floating at an intermediate position in a depth direction. In addition, a surface of the decoration section oriented to the rear side constitutes a counter reflection surface.

Abstract: A three dimensional ReRAM device includes an etch stop dielectric material layer overlying top surfaces of the dielectric rail structures and the dielectric pillar structures. The etch stop dielectric material layer includes openings in areas that overlie semiconductor pillars of the vertical select transistors. An array of metal nitride portions is located within the openings in the etch stop dielectric material layer. The etch stop dielectric material layer protects the underlying dielectric pillar structures during anisotropic etching steps without covering the metal nitride portions.

Abstract: A speaker in the present disclosure includes a magnetic circuit having a magnetic gap, a frame fixed to the magnetic circuit, a voice coil disposed in the magnetic gap, a cylindrical bobbin around which the voice coil is formed, and a diaphragm configured so that the inner circumferential side of the diaphragm is fixed to the bobbin and the outer edge of the diaphragm is supported by the frame with an edge member intervening therebetween. The diaphragm has an elliptical shape that is non-axisymmetric with respect to a center axis passing through the center of the bobbin. The diaphragm is formed by vacuum molding of a sheet-like raw material (thermoplastic CFRP sheet) in which long-fiber fillers are oriented in one direction in a thermoplastic resin. The orientation of the long-fiber fillers is set so as to match the short-axis direction of the diaphragm.

Abstract: A seal ring capable of stably reducing a rotational torque while preventing the leakage of sealed fluid. The seal ring includes: an abutment joint part (110) provided at one portion in a circumferential direction thereof; a plurality of dynamic pressure generation grooves (120) provided at intervals in the circumferential direction on a side of a sliding surface thereof sliding on a lateral wall surface of an annular groove; and foreign matter discharging grooves (130) that are provided between a region in which the plurality of dynamic pressure generation grooves (120) is arranged and the abutment joint part (110) in the circumferential direction on the side of the sliding surface sliding on the lateral wall surface, and that are capable of catching foreign matter intruding from the abutment joint part (110) and discharging the caught foreign matter to an outside of a sliding part between the seal ring and the lateral wall surface.

Abstract: A light source apparatus for endoscope includes: a housing including an intake port; a first heat radiating portion connected to a first light source and cooled by gas taken in from the intake port; a third heat radiating portion connected to a third light source, and cooled by gas taken in from the intake port; and a second heat radiating portion including a lower necessary cooling amount than the first heat radiating portion and the third heat radiating portion connected to a second light source provided in a flow path in which a flow path of the gas that passes through the first heat radiating portion and a flow path of the gas that passes through the third heat radiating portion are merged together, and cooled by merged gas merged on a merged flow path.

Abstract: A three dimensional ReRAM device includes an etch stop dielectric material layer overlying top surfaces of the dielectric rail structures and the dielectric pillar structures. The etch stop dielectric material layer includes openings in areas that overlie semiconductor pillars of the vertical select transistors. An array of metal nitride portions is located within the openings in the etch stop dielectric material layer. The etch stop dielectric material layer protects the underlying dielectric pillar structures during anisotropic etching steps without covering the metal nitride portions.

Abstract: Manufacturing methods are disclosed to reduce surface particle impurities after a plasma process (e.g., etch, deposition, etc.) by repelling particles trapped within particle wells to reduce surface particle impurities on microelectronic workpieces after termination of the plasma process. Rather than turn off pressure and source power at the termination of the plasma process, the disclosed embodiments first enter a sequence to adjust process parameters to repel particles in a particle well in order to reduce or eliminate the particle well prior to terminating the plasma process. During this particle repel sequence, certain disclosed embodiments adjust parameters to maintain an electrostatic field above the surface of the wafer utilizing low plasma density and ion energy conditions that help to repel particles from the microelectronic workpiece. The disclosed methods allow for the particle well to be exhausted well prior to the collapse of electrostatic forces when the plasma process is terminated.

Abstract: A touch sensor module is structured by laminating an organic EL layer and a smoked glass layer on a substrate, which has a positive electrode pattern and a negative electrode pattern on the upper surface. When a driving voltage is applied to the positive electrode pattern, a current flows in a segment between the positive electrode pattern and the negative electrode pattern in the organic EL layer and the segment emits light. The emitted light causes a figure that represents a key to appear on the display surface of the touch sensor module. When the user touches a portion in which the figure representing a key is displayed on the display surface of the touch sensor module, a capacitance between the positive electrode pattern and the negative electrode pattern changes. Accordingly, the user's touch to the figure representing a key is detected.

Abstract: An alternating stack of insulating layers and electrically conductive layers is formed over a substrate. Sidewalls of the electrically conductive layers are laterally recessed to form laterally recessed regions. After formation of a conformal barrier material layer in the laterally recessed regions and on the sidewalls of the insulating layers, an amorphous precursor memory material layer is deposited in lateral cavities and over the conformal barrier material layer. An anneal process is performed to selectively crystallize portions of the amorphous precursor memory material layer in the lateral cavities into crystalline memory material portions while not crystallizing portions of the amorphous precursor memory material outside the lateral cavities. Remaining amorphous portions of the amorphous precursor memory material layer are removed selective to the crystalline memory material portions. A vertical conductive line is formed on the crystalline memory material portions.