Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer selectively exhibiting a first state in which the first magnetic layer has a first magnetization direction perpendicular to a main surface thereof and a second state in which the first magnetic layer has a second magnetization direction opposite to the first magnetization direction, a second magnetic layer having a fixed magnetization direction perpendicular to a main surface thereof and corresponding to the first magnetization direction, a third magnetic layer provided between the first and second magnetic layers, having a fixed magnetization direction perpendicular to a main surface thereof and corresponding to the second magnetization direction, and having a side surface including a recess portion, and a nonmagnetic layer provided between the first and third magnetic layers.

Abstract: Provided is a flux for a solder paste that can prevent peeling from electrode, which is seen in a component, a thickness of which is reduced, such a semiconductor package like BGA. Rosin, a glycol-ether-based solvent, an organic acid, a thixotropic agent, a halogen compound, and an imidazole compound are contained and the halogen compound is either an amine hydrohalide or an organohalogen compound or a combination of them. Their addition amounts stay within a range satisfying a formula of 2.5-X-0.625Y?0 in which the addition amount of the amine hydrohalide is indicated by X (weight %) and the addition amount of the organohalogen compound is indicated by Y (weight %). However, the addition amount X of the amine hydrohalide and the addition amount Y of the organohalogen compound are such that 0?X?2.5 and 0?Y?4, excluding a range of 0?X<0.02 and 0?Y<0.1.

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer selectively exhibiting a first state in which the first magnetic layer has a first magnetization direction perpendicular to a main surface thereof and a second state in which the first magnetic layer has a second magnetization direction opposite to the first magnetization direction, a second magnetic layer having a fixed magnetization direction perpendicular to a main surface thereof and corresponding to the first magnetization direction, a third magnetic layer provided between the first and second magnetic layers, having a fixed magnetization direction perpendicular to a main surface thereof and corresponding to the second magnetization direction, and having a side surface including a recess portion, and a nonmagnetic layer provided between the first and third magnetic layers.

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer, a second magnetic layer and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, and a sidewall insulating layer provided on a side surface of the stacked structure and containing boron (B).

Abstract: A composite silica glass made light diffusion member includes a dense silica glass, and a porous silica glass which has been layered on the surface of the dense silica glass. The porous silica glass is a porous body and has a homogeneous pore distribution. The porous body has a framework including a plurality of spherical silica glasses, contains a communicating pore part formed by spaces among them, and has a central pore size of 10 to 20 ?m and a porosity of 25 to 40%. The spherical silica glasses have an average diameter of 30 to 100 ?m. An average value of a specific arithmetic average roughness Ra in each of the spherical silica glass exposed on an outer surface of the porous silica glass is 0.8 to 4.0 nm.

Abstract: A magnetoresistive effect element according to one embodiment includes: a first magnetic layer; a nonmagnetic layer; a second magnetic layer; a metal layer; and a third magnetic layer. An area of a bottom of the third magnetic layer is larger than an area of a top of the third magnetic layer. An angle between the top of the third magnetic layer and a side of the third magnetic layer is larger than an angle between a top of the second magnetic layer and a side of the second magnetic layer, or an angle between the bottom of the third magnetic layer and a side of the third magnetic layer is smaller than an angle between the bottom of the second magnetic layer and a side of the second magnetic layer.

Abstract: A memory includes a first magnetic layer, a second magnetic layer, a nonmagnetic layer between the first and second magnetic layers, a third magnetic layer synthetic-antiferromagnetic-coupled with the second magnetic layer, and a controller controlling a read operation and a write operation. The write operation includes a first operation, a second operation and a third operation. A first potential of the first magnetic layer is larger than a second potential of the third magnetic layer in the first operation. A third potential of the third magnetic layer is larger than a fourth potential of the first magnetic layer in the second operation. A fifth potential of the first magnetic layer is larger than a sixth potential of the third magnetic layer in the third operation.

Abstract: According to one embodiment, a magnetoresistive memory device includes a stacked layer structure includes a first magnetic layer, a second magnetic layer, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, and a third magnetic layer provided on the first magnetic layer, which is opposite the nonmagnetic layer. The third magnetic layer includes a first magnetic material portion and a second magnetic material portion provided between the stacked layer structure and the first magnetic material portion. The saturation magnetization of the second magnetic material portion is smaller than that of the first magnetic material portion.

Abstract: According to one embodiment, a magnetoresistive memory device includes a stacked layer structure includes a first magnetic layer, a second magnetic layer, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, and a third magnetic layer provided on the first magnetic layer, which is opposite the nonmagnetic layer. The third magnetic layer includes a first magnetic material portion and a second magnetic material portion provided between the stacked layer structure and the first magnetic material portion. The saturation magnetization of the second magnetic material portion is smaller than that of the first magnetic material portion.

Abstract: According to one embodiment, a manufacturing method of a magnetoresistive memory device includes forming a first magnetic layer on a substrate, forming a magnetoresistive effect element on the first magnetic layer, forming a mask on a part of the magnetoresistive effect element, selectively etching the magnetoresistive effect element using the mask, forming a sidewall insulating film on a sidewall of the magnetoresistive effect element exposed by the etching, selectively etching the first magnetic layer using the mask and the sidewall insulating film and forming a deposition layer containing a magnetic material on a sidewall of the first magnetic layer and the sidewall insulating film, and introducing ions into the deposition layer.

Abstract: According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.

Abstract: According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer. The reference layer includes a first region, and a second region provided outside the first region to surround the same. The second region contains an element contained in the first region and another element being different from the element. The magnetoresistive element further includes a storage layer, and a tunnel barrier layer provided between the reference layer and the storage layer. The storage layer is free from the another element.

Abstract: According to one embodiment, a manufacturing method of a magnetoresistive memory device includes forming a first magnetic layer on a substrate, forming a magnetoresistive effect element on the first magnetic layer, forming a mask on a part of the magnetoresistive effect element, selectively etching the magnetoresistive effect element using the mask, forming a sidewall insulating film on a sidewall of the magnetoresistive effect element exposed by the etching, selectively etching the first magnetic layer using the mask and the sidewall insulating film and forming a deposition layer containing a magnetic material on a sidewall of the first magnetic layer and the sidewall insulating film, and introducing ions into the deposition layer.

Abstract: According to one embodiment, a magnetoresistance effect element includes a reference layer, a shift canceling layer, a storage layer provided between the reference layer and the shift canceling layer, a tunnel barrier layer provided between the reference layer and the storage layer, and a spacer layer provided between the shift canceling layer and the storage layer, wherein a pattern of the storage layer is provided inside a pattern of the shift canceling layer when the patterns of the storage layer and the shift canceling layer are viewed from a direction perpendicular to the patterns of the storage layer and the shift canceling layer.

Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistance effect element having a structure in which a first magnetic layer, a nonmagnetic layer, a second magnetic layer, and a third magnetic layer are stacked, wherein the third magnetic layer comprises a first region and a plurality of second regions, and each of the second regions is surrounded by the first region, has conductivity, and has a greater magnetic property than the first region.

Abstract: According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.

Abstract: According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.

Abstract: A magnetic memory element includes a memory layer having magnetic anisotropy on the film surface thereof in the perpendicular direction and in which the magnetization direction is variable, a reference layer having magnetic anisotropy on the film surface thereof in the perpendicular direction and in which the magnetization direction is not variable, and a tunnel barrier layer which is interposed between the memory layer and the reference layer. The memory layer is made of an alloy including cobalt (Co) andiron (Fe). A plurality of oxygen atoms are present on both interfaces of the memory layer.

Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistance effect element having a structure in which a first magnetic layer, a nonmagnetic layer, a second magnetic layer, and a third magnetic layer are stacked, wherein the third magnetic layer comprises a first region and a plurality of second regions, and each of the second regions is surrounded by the first region, has conductivity, and has a greater magnetic property than the first region.

Abstract: According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer. The reference layer includes a first region, and a second region provided outside the first region to surround the same. The second region contains an element contained in the first region and another element being different from the element. The magnetoresistive element further includes a storage layer, and a tunnel barrier layer provided between the reference layer and the storage layer. The storage layer is free from the another element.