Patents by Inventor Yutaka Hashimoto
Yutaka Hashimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150069557Abstract: According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.Type: ApplicationFiled: March 10, 2014Publication date: March 12, 2015Inventors: Masahiko NAKAYAMA, Masatoshi YOSHIKAWA, Tadashi KAI, Yutaka HASHIMOTO, Masaru TOKO, Hiroaki YODA, Jae Geun OH, Keum Bum LEE, Choon Kun RYU, Hyung Suk LEE, Sook Joo KIM
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Publication number: 20140284735Abstract: According to one embodiment, a magnetoresistance effect element includes a reference layer, a shift canceling layer, a storage layer provided between the reference layer and the shift canceling layer, a tunnel barrier layer provided between the reference layer and the storage layer, and a spacer layer provided between the shift canceling layer and the storage layer, wherein a pattern of the storage layer is provided inside a pattern of the shift canceling layer when the patterns of the storage layer and the shift canceling layer are viewed from a direction perpendicular to the patterns of the storage layer and the shift canceling layer.Type: ApplicationFiled: August 29, 2013Publication date: September 25, 2014Inventors: Masahiko NAKAYAMA, Toshihiko NAGASE, Tadashi KAI, Youngmin EEH, Koji UEDA, Yutaka HASHIMOTO, Daisuke WATANABE, Kazuya SAWADA
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Publication number: 20140264669Abstract: A magnetic memory element includes a memory layer having magnetic anisotropy on the film surface thereof in the perpendicular direction and in which the magnetization direction is variable, a reference layer having magnetic anisotropy on the film surface thereof in the perpendicular direction and in which the magnetization direction is not variable, and a tunnel barrier layer which is interposed between the memory layer and the reference layer. The memory layer is made of an alloy including cobalt (Co) andiron (Fe). A plurality of oxygen atoms are present on both interfaces of the memory layer.Type: ApplicationFiled: September 3, 2013Publication date: September 18, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Masahiko NAKAYAMA, Tatsuya KISHI, Masaru TOKO, Akiyuki MURAYAMA, Yutaka HASHIMOTO, Hisanori AIKAWA
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Patent number: 8667740Abstract: A weather strip mounted along a circumferential edge of a door opening of an automobile body comprises: an installation base member having a substantially U-shape in cross-section; and a hollow seal member provided on an outer-cabin side of the installation base member, which makes elastic contact with a protrudingly curved surface having a substantially U-shape in cross-section of the door; in which the hollow seal member includes: a first hollow wall having a substantially reversed V-shape in cross-section and a second hollow wall having a substantially V-shape in cross-section, which are connected with each other; a seal wall swelled and curved toward an inner side of the hollow seal member; and a protrusion protrudingly provided toward the outer-cabin side in succession to the seal wall, which makes elastic contact with the protrudingly curved surface.Type: GrantFiled: March 18, 2013Date of Patent: March 11, 2014Assignee: Nishikawa Rubber Co., Ltd.Inventors: Yutaka Hashimoto, Akio Okayama, Ayako Teishi
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Publication number: 20130288397Abstract: According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including perpendicular anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer having a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected from a second group including Co and Fe, a second magnetic layer including perpendicular magnetic anisotropy to the film surface and a variable magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer. The magnetic film includes amorphous phases and crystals whose particle sizes are 0.5 nm or more.Type: ApplicationFiled: July 1, 2013Publication date: October 31, 2013Inventors: Eiji Kitagawa, Tadaomi Daibou, Yutaka Hashimoto, Masaru Tokou, Tadashi Kai, Makato Nagamine, Toshihiko Nagase, Katsuya Nishiyama, Koji Ueda, Hiroaki Yoda, Kay Yakushiji, Shinji Yuasa, Hitoshi Kubota, Taro Nagahama, Akio Fukushima, Koji Ando
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Patent number: 8547737Abstract: A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a nonmagnetic layer placed between the first ferromagnetic layer and the second ferromagnetic layer; a first interfacial magnetic layer placed between the first ferromagnetic layer and the nonmagnetic layer; and a second interfacial magnetic layer placed between the second ferromagnetic layer and the nonmagnetic layer. The first interfacial magnetic layer includes a first interfacial magnetic film, a second interfacial magnetic film placed between the first interfacial magnetic film and the nonmagnetic layer and having a different composition from that of the first interfacial magnetic film, and a first nonmagnetic film placed between the first interfacial magnetic film and the second interfacial magnetic film.Type: GrantFiled: September 27, 2012Date of Patent: October 1, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Tadaomi Daibou, Eiji Kitagawa, Yutaka Hashimoto, Masaru Tokou, Toshihiko Nagase, Katsuya Nishiyama, Koji Ueda, Makoto Nagamine, Tadashi Kai, Hiroaki Yoda
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Patent number: 8530887Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a tunnel barrier layer on the first magnetic layer; a second magnetic layer placed on the tunnel barrier layer and containing CoFe; and a nonmagnetic layer placed on the second magnetic layer, and containing nitrogen and at least one element selected from the group consisting of B, Ta, Zr, Al, and Ce.Type: GrantFiled: March 17, 2011Date of Patent: September 10, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Eiji Kitagawa, Tadashi Kai, Tadaomi Daibou, Yutaka Hashimoto, Hiroaki Yoda
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Patent number: 8502331Abstract: According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including perpendicular anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer having a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected from a second group including Co and Fe, a second magnetic layer including perpendicular magnetic anisotropy to the film surface and a variable magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer. The magnetic film includes amorphous phases and crystals whose particle sizes are 0.5 nm or more.Type: GrantFiled: September 16, 2011Date of Patent: August 6, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Eiji Kitagawa, Tadaomi Daibou, Yutaka Hashimoto, Masaru Tokou, Tadashi Kai, Makoto Nagamine, Toshihiko Nagase, Katsuya Nishiyama, Koji Ueda, Hiroaki Yoda, Kay Yakushiji, Shinji Yuasa, Hitoshi Kubota, Taro Nagahama, Akio Fukushima, Koji Ando
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Publication number: 20130177357Abstract: The embodiment of the present invention is a preliminary construction method of an in-plant trench of a nuclear power plant, the method. The method includes: constructing a plurality of buildings for generating an atomic energy; constructing a trench between the buildings via a platform configured to adjust a level of the trench with an installation level of the trench; and backfilling an area between a ground and the trench, after the construction of the trench.Type: ApplicationFiled: June 13, 2012Publication date: July 11, 2013Applicant: Kabushiki Kaisha ToshibaInventors: Yutaka HASHIMOTO, Osamu Inoue
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Patent number: 8393765Abstract: A luminaire includes a light-emitting unit, a main body frame, a support frame, and a lighting unit. The light-emitting unit mounts light-emitting elements. The main body frame supports the light-emitting unit, and is formed rectangular having a hook-shaped engaging piece on one side. The support frame is formed rectangular surrounding the outer periphery of the main body frame, and has a groove-shaped receiving place to engage with the engaging piece of the main body frame, on one internal side. The lighting unit turns on the light-emitting elements.Type: GrantFiled: December 3, 2009Date of Patent: March 12, 2013Assignees: Toshiba Lighting & Technology Corporation, Kabushiki Kaisha ToshibaInventors: Naoki Sugishita, Homare Takai, Takafumi Oishi, Yasuhiko Ishii, Masanao Hieda, Yutaka Hashimoto
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Publication number: 20130020659Abstract: A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a nonmagnetic layer placed between the first ferromagnetic layer and the second ferromagnetic layer; a first interfacial magnetic layer placed between the first ferromagnetic layer and the nonmagnetic layer; and a second interfacial magnetic layer placed between the second ferromagnetic layer and the nonmagnetic layer. The first interfacial magnetic layer includes a first interfacial magnetic film, a second interfacial magnetic film placed between the first interfacial magnetic film and the nonmagnetic layer and having a different composition from that of the first interfacial magnetic film, and a first nonmagnetic film placed between the first interfacial magnetic film and the second interfacial magnetic film.Type: ApplicationFiled: September 27, 2012Publication date: January 24, 2013Inventors: Tadaomi Daibou, Eiji Kitagawa, Yutaka Hashimoto, Masaru Tokou, Toshihiko Nagase, Katsuya Nishiyama, Koji Ueda, Makoto Nagamine, Tadashi Kai, Hiroaki Yoda
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Patent number: 8305801Abstract: A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a nonmagnetic layer placed between the first ferromagnetic layer and the second ferromagnetic layer; a first interfacial magnetic layer placed between the first ferromagnetic layer and the nonmagnetic layer; and a second interfacial magnetic layer placed between the second ferromagnetic layer and the nonmagnetic layer. The first interfacial magnetic layer includes a first interfacial magnetic film, a second interfacial magnetic film placed between the first interfacial magnetic film and the nonmagnetic layer and having a different composition from that of the first interfacial magnetic film, and a first nonmagnetic film placed between the first interfacial magnetic film and the second interfacial magnetic film.Type: GrantFiled: March 8, 2011Date of Patent: November 6, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Tadaomi Daibou, Eiji Kitagawa, Yutaka Hashimoto, Masaru Tokou, Toshihiko Nagase, Katsuya Nishiyama, Koji Ueda, Makoto Nagamine, Tadashi Kai, Hiroaki Yoda
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Publication number: 20120068139Abstract: A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a nonmagnetic layer placed between the first ferromagnetic layer and the second ferromagnetic layer; a first interfacial magnetic layer placed between the first ferromagnetic layer and the nonmagnetic layer; and a second interfacial magnetic layer placed between the second ferromagnetic layer and the nonmagnetic layer. The first interfacial magnetic layer includes a first interfacial magnetic film, a second interfacial magnetic film placed between the first interfacial magnetic film and the nonmagnetic layer and having a different composition from that of the first interfacial magnetic film, and a first nonmagnetic film placed between the first interfacial magnetic film and the second interfacial magnetic film.Type: ApplicationFiled: March 8, 2011Publication date: March 22, 2012Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Tadaomi Daibou, Eiji Kitagawa, Yutaka Hashimoto, Masaru Tokou, Toshihiko Nagase, Katsuya Nishiyama, Koji Ueda, Makoto Nagamine, Tadashi Kai, Hiroaki Yoda
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Publication number: 20120068285Abstract: According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including perpendicular anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer having a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected from a second group including Co and Fe, a second magnetic layer including perpendicular magnetic anisotropy to the film surface and a variable magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer. The magnetic film includes amorphous phases and crystals whose particle sizes are 0.5 nm or more.Type: ApplicationFiled: September 16, 2011Publication date: March 22, 2012Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Eiji KITAGAWA, Tadaomi Daibou, Yutaka Hashimoto, Masaru Tokou, Tadashi Kai, Makoto Nagamine, Toshihiko Nagase, Katsuya Nishiyama, Koji Ueda, Hiroaki Yoda, Kay Yakushiji, Shinji Yuasa, Hitoshi Kubota, Taro Nagahama, Akio Fukushima, Koji Ando
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Publication number: 20110227179Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a tunnel barrier layer on the first magnetic layer; a second magnetic layer placed on the tunnel barrier layer and containing CoFe; and a nonmagnetic layer placed on the second magnetic layer, and containing nitrogen and at least one element selected from the group consisting of B, Ta, Zr, Al, and Ce.Type: ApplicationFiled: March 17, 2011Publication date: September 22, 2011Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Eiji KITAGAWA, Tadashi KAI, Tadaomi DAIBOU, Yutaka HASHIMOTO, Hiroaki YODA
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Patent number: 7960918Abstract: An electronic device, and a corresponding light emission control method for the electronic device, emit light by utilizing recombination of electrons and holes the device and method input a pulse-shaped driving signal having a duty ratio higher than or equal to 0.7 and lower than 1.0 and thereby causing light to be emitted intermittently. When an electron density is denoted by n, a hole density by p, a thermal velocity of electrons by Vth:n, a thermal velocity of holes by Vth:p, an electron capture cross section of a defect level by ?n, a hole capture cross section of a defect level by ?p, and a pulse width of the driving signal by W, the input driving signal has a pulse width W that satisfies W<1/{n·vth:n·?n·p·vth:p·?p/(n·vth:n·?n+p·vth:p·?p)}.Type: GrantFiled: February 4, 2008Date of Patent: June 14, 2011Assignee: Tottori UniversityInventors: Masahiro Adachi, Yutaka Hashimoto, Katsuhisa Kanzaki, Tomoki Abe, Hirofumi Kasada, Koshi Ando
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Publication number: 20100156311Abstract: In an electronic device having a light emitting section that emits light by utilizing recombination of electrons and holes and in a light emission control method for this electronic device, an electronic device and a light emission control method for this electronic device are provided in which lifetime improvement is achieved in the light emitting section. An electronic device and a light emission control method for the electronic device, the electronic device including: a light emitting section that emits light by utilizing recombination of electrons and holes; and a driving section that inputs to the light emitting section a pulse-shaped driving signal having a duty ratio higher than or equal to 0.7 and lower than 1.Type: ApplicationFiled: February 4, 2008Publication date: June 24, 2010Applicant: TOTTORI UNIVERSITYInventors: Masahiro Adachi, Yutaka Hashimoto, Katsuhisa Kanzaki, Tomoki Abe, Hirofumi Kasada, Koshi Ando
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Publication number: 20100142202Abstract: A luminaire includes a light-emitting unit, a main body frame, a support frame, and a lighting unit. The light-emitting unit mounts light-emitting elements. The main body frame supports the light-emitting unit, and is formed rectangular having a hook-shaped engaging piece on one side. The support frame is formed rectangular surrounding the outer periphery of the main body frame, and has a groove-shaped receiving place to engage with the engaging piece of the main body frame, on one internal side. The lighting unit turns on the light-emitting elements.Type: ApplicationFiled: December 3, 2009Publication date: June 10, 2010Applicants: TOSHIBA LIGHTING & TECHNOLOGY CORPORATION, KABUSHIKI KAISHA TOSHIBAInventors: Naoki SUGISHITA, Homare Takai, Takafumi Oishi, Yasuhiko Ishii, Masanao Hieda, Yutaka Hashimoto
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Patent number: 7199182Abstract: An aqueous resin composition is provided which does not use a high boiling point solvent, and yet displays favorable long term stability and excellent film formation, and does not suffer from problems such as skin generation. The aqueous resin composition comprises a water soluble magnesium salt (A) and an aqueous polyurethane (B).Type: GrantFiled: June 28, 2001Date of Patent: April 3, 2007Assignee: Dainippon Ink and Chemicals, Inc.Inventors: Yoshimasa Tanaka, Masato Inoue, Masatoshi Matsuo, Yutaka Hashimoto
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Patent number: D606703Type: GrantFiled: May 26, 2009Date of Patent: December 22, 2009Assignees: Toshiba Lighting & Technology Corporation, Kabushiki Kaisha ToshibaInventors: Naoki Sugishita, Homare Takai, Masanao Hieda, Yasuhiko Ishii, Yutaka Hashimoto