Abstract: A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion.

Abstract: A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion.

Abstract: A method for eliminating slip dislocations in producing single crystal silicon, a seed crystal capable of eliminating the slip dislocations, a single crystal silicon ingot from which the slip dislocations have been eliminated and a single crystal silicon wafer, are disclosed. Single crystal silicon is produced by dipping a seed crystal in a melt and pulling the seed crystal up along the axis of the seed crystal, using a single crystal (1) in which the <110> crystal orientation (10) is inclined at a predetermined angle ? with respect to the axial direction (9) so that the edge direction (8) of the {111} crystal plane is inclined with respect to the axial direction (9). When single crystal silicon is grown while pulling up a seed crystal by the CZ method, a single crystal silicon ingot of a large diameter and a heavy weight can be pulled up by eliminating slip dislocations from the thick crystal.

Abstract: A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion.

Abstract: The present invention aims to improve thermal efficiency and to reduce melting time when a raw material in an auxiliary crucible is heated and melted by induction heating method. When an initial raw material 30a is at low temperature and its conductivity is relatively low, a conductive carbon cylinder 2 is arranged at such a height as to cover the entire side wall of the auxiliary crucible 1, and when high frequency current is applied on a high frequency coil 3, secondary induction current is generated on the carbon cylinder 2. Then, Joule heat is generated on the carbon cylinder 2 by the secondary induction current, and heat of the carbon cylinder 2 is transmitted to the raw material inside via the auxiliary crucible 1. Thus, the raw material is heated, and melting is started. When the raw material is melted, an insulating ceramic base 4 is arranged at such a position as to cover the entire side wall of the auxiliary crucible 1.

Abstract: With relatively simple arrangement and at low cost, the present invention provides a single crystal pulling apparatus, by which it is possible to prevent a single crystal from being turned to polycrystal, to move the crystal itself smoothly and gently from a necking portion during pulling operation of the single crystal, and to reliably hold the single crystal even in case of trouble such as power suspension.

Abstract: A tray for semiconductor integrated circuit devices, including a plurality of first partition walls extending in a first direction, a plurality of second partition walls extending in a second direction at right angles with the first direction, and circumferential frame portions connecting end portions of the first and second partition walls. The regions surrounded by the first partition walls and the second partition walls constitute seating portions for seating semiconductor integrated circuit devices. The first partition walls are disposed such that one first partition wall is disposed between two rows of the seating portions which are adjacent to each other in the second direction. The second partition walls are disposed such that two second partition walls are disposed between two rows of the seating portions which are adjacent to each other in the first direction, and opening portions are formed between the two second partition walls.

Abstract: The object of the present invention is to achieve reliable and safe pulling operation of a single crystal having large diameter and heavy weight in a chamber with reduced pressure. According to the present invention, a constricted portion is formed under a seed crystal, and a single crystal is pulled up by supporting the constricted portion, and a support base 30 is used, which has an opening 22, serving as a through-hole, and a slit 34, which leads from the opening to outer periphery of the support base, and a portion with larger diameter of the constricted portion is supported from below in linear contact manner. The support base 30 further comprises a recess 32, which leads to the opening 22, and it can be designed and selected to have such configuration as to suit the shape of the constricted portion. The support base 30 can be moved between a non-support position and a support position by operating a moving unit.

Abstract: The object of the present invention is to achieve reliable and safe pulling operation of a single crystal having large diameter and heavy weight in a chamber with reduced pressure. The semiconductor manufacturing apparatus of the invention comprises a seed crystal lift mechanism for holding a seed crystal and for moving it up and down, and a single crystal gripping mechanism for gripping a constricted portion of a single crystal formed, whereby the apparatus comprises an accommodation container 10a for accommodating at least a driving unit 14 of the seed crystal lift mechanism and at least a driving unit 15 of the single crystal gripping mechanism, and further accommodation container lift mechanisms 3 and 4 for moving the accommodation container up and down. The accommodation container may be designed in heat-insulating structure, or a cooling means for cooling inside the accommodation container may be further provided.

Abstract: A method of over-molding used to produce a three-dimensional hollow molded article employs a core made of resin having a hollow portion. The core is placed in a cavity of a mold. Molten resin is injected into a space formed by the core and a cavity wall of the mold through a resin injection portion. In this way at least part of the outer surface of the core is covered with resin. Deformation of the core due to the pressure of the resin during injection is prevented in one of a number of different ways. The over-molding method is optimized by calculating a temperature distribution and a pressure distribution of the molten resin in the step of injecting the molten resin into the space by numerical analysis. The displacement distribution and for the stress distribution of the core caused by pressure applied to the core by flow of the molten resin is calculated by a numerical analysis on the basis of the calculated temperature distribution and pressure distribution.

Abstract: A method of supplying raw material for fabricating semiconductor single crystal according to the continuously charged method provides an inventive method to overcome the problems of the raw material being charged either insufficiently or excessively, and to charge the raw material steadily. According to the inventive method, the raw material of two polysilicon bars is melted simultaneously and flows to the crucible. By calculating the difference between the weight of the growing single crystal and that of the molten raw material, the insufficiency or excess of the raw material charged is obtained, thereby inducing the equivalent regulation. Further, the coordinates of the tips of the raw material of two polysilicon bars while molten is taken to control the power of the two heaters which melt the polysilicon bars respectively for keeping the coordinates of the two tips in a constant position.

Abstract: An apparatus for precisely detecting the diameter of the single-crystal material which is fabricated by a continuously charged method is disclosed. Variables such as the crucible raising amount, the material charging amount and the weight of a growing single crystal can be detected by conventional detecting apparatus. A present melt surface position is obtained by initial melt surface position+the crucible raising amount +(material charging amount/crucible area)-(weight of the single-crystal/crucible area) and then provided to a diameter control apparatus. The sensing angle with respect to the initial melt surface position 3a is .theta.. The height from initial melt surface position 3a to one-dimensional image sensor 2 is h. The horizontal distance between the scanning line and the one-dimensional image sensor is r. When the melt surface falls by a distance of a .DELTA.h from position 3a to position 3b, the adjusted sensing angle .theta.' can be obtained from .theta.'=cos.sup.-1 [(h+.DELTA.h)/{(h+.DELTA.h).

Abstract: The amount of Group-V element included in a melt 6 has the close relationship with the oxygen concentration of the melt 6. This relationship is utilized for controlling the oxygen concentration of a single crystal 8 at a high level. The content of Group-V element is calculated from the weight of the melt 6 gauged by a gravimeter 11 and compared with a preset value in a control unit 12. When the calculated content is smaller than the preset value, the control signal to additionally supply Group-V element to the melt 6 is outputted from the control unit 12 to a feeder 14. When the calculated content is larger than the preset value, the control signal to supply a raw material to the melt 6 is outputted to another feeder 13.

Abstract: The present invention employs the construction wherein a resistor heater is disposed inside a protective cylinder whose tip is open to a molten liquid packing zone of a crucible inside a pulling apparatus so that the resistor heater is above the tip of a lower portion and temperature setting can be made so as to be capable of fusing a starting material. Since the tip of the protective cylinder is positioned inside the molten liquid at the time of pulling of a single crystal, the gaseous phase portion inside the protective cylinder and the gaseous phase portion inside the pulling apparatus are separated apart by the molten liquid and are independent of each other and a starting material polycrystal rod loaded into the protective cylinder can be supplied to the molten liquid surface inside the crucible while being molten at the lower part of the protective cylinder by the resistor heater.

Abstract: A plurality of shield blades 31 for defining an opening 25 surrounding a single crystal 15 are provided between a melt 14 received in a crucible 10 and a screen 30. The shield blades 21 are carried by operation rods 23 so as to make the gap between the inner edges of the shield blades 23 and the surface of the single crystal 15 constant. Since crystal growth continues under the same condition from the beginning to the end, an obtained single crystal 15 is free from defects such as dislocations and excellent in homogenieity.

Abstract: The present invention employs the construction wherein a resistor heater is disposed inside a protective cylinder whose tip is open to a molten liquid packing zone of a crucible inside a pulling apparatus so that the resistor heater is above the tip of a lower portion and temperature setting can be made so as to be capable of fusing a starting material. Since the tip of the protective cylinder is positioned inside the molten liquid at the time of pulling of a single crystal, the gaseous phase portion inside the protective cylinder and the gaseous phase portion inside the pulling apparatus are separated apart by the molten liquid and are independent of each other and a starting material polycrystal rod loaded into the protective cylinder can be supplied to the molten liquid surface inside the crucible while being molten at the lower part of the protective cylinder by the resistor heater.