Abstract: The EL substrate includes semiconductor layers of TFTs, a pixel electrode, and an upper part electrode of a Cs section which are provided on a gate insulating film. The semiconductor layers are covered with a protective film which has openings via which the pixel electrode and the upper part electrode are exposed. The semiconductor layers are an oxide semiconductor layer, and the pixel electrode and the upper part electrode are reduction electrodes of the oxide semiconductor layer.

Abstract: This TFT substrate (100A) includes: a gate connecting layer (3a) formed on a substrate (1) out of a same conductive film as a gate electrode (3) or a transparent connecting layer (2a) formed on the substrate (1) out of a same conductive film as a first transparent electrode (2); an oxide layer (5z) which is formed on an insulating layer (4) and which includes at least one conductor region (5a); and a source connecting layer (6a) formed on the oxide layer (5z) out of a same conductor film as a source electrode (6s). The source connecting layer (6a) is electrically connected to either the gate connecting layer (3a) or the transparent connecting layer (2a) via the at least one conductor region (5a).

Abstract: This semiconductor device (100A) includes: a substrate (2); a gate electrode (3) formed on the substrate (2); a gate insulating layer (4) formed over the gate electrode (3); an oxide semiconductor layer (5) formed on the gate insulating layer (4); source and drain electrodes (6s, 6d) electrically connected to the oxide semiconductor layer (5); a first transparent electrode (7) electrically connected to the drain electrode (6d); an interlayer insulating layer (8a) including portions formed on the source and drain electrodes (6s, 6d); and a second transparent electrode (9) formed on the interlayer insulating layer (8a). At least a portion of the second transparent electrode (9) overlaps with the first transparent electrode (7) with the interlayer insulating layer (8a) interposed between them. And the oxide semiconductor layer (5) and the first transparent electrode (7) are formed out of a same oxide film.

Abstract: This semiconductor device (100A) includes: a gate electrode (3) formed on a substrate (2); a gate insulating layer (4) formed on the gate electrode; an oxide layer (50) which is formed on the gate insulating layer and which includes a semiconductor region (51) and a conductor region (55); source and drain electrodes (6s, 6d) electrically connected to the semiconductor region; a protective layer (11) formed on the source and drain electrodes; and a transparent electrode (9) formed on the protective layer. At least part of the transparent electrode overlaps with the conductor region with the protective layer interposed between them. The upper surface of the conductor region contacts with a reducing insulating layer (61) with the property of reducing an oxide semiconductor included in the oxide layer. The reducing insulating layer is out of contact with the channel region of the semiconductor region.

Abstract: A semiconductor device has: a first transparent electrode, a drain electrode, and a source electrode formed on a substrate; an oxide layer joined electrically to the source electrode and the drain electrode and containing a semiconductor region; an insulating layer formed on the oxide layer and the first transparent electrode; a gate electrode formed on the insulating layer; and a second transparent electrode formed so as to overlap at least a part of the first transparent electrode with the insulating layer interposed therebetween. The oxide layer and the first transparent electrode are formed of the same oxide film.

Abstract: This semiconductor device (100A) includes: a gate electrode (3); a gate insulating layer (4); an oxide layer (50) which is formed over the gate insulating layer (4) and which includes a semiconductor region (51) and a first conductor region (55) that contacts with the semiconductor region (51) and where the semiconductor region (51) at least partially overlaps with the gate electrode (3) with the gate insulating layer (4) interposed between them; a protective layer (8b) covering the upper surface of the semiconductor region (51); source and drain electrodes (6s, 6d) electrically connected to the semiconductor region (51); and a transparent electrode (9) arranged so as to overlap at least partially with the first conductor region (55) with a dielectric layer interposed between them. The drain electrode (6d) contacts with the first conductor region (55).

Abstract: This semiconductor device (100A) includes: an oxide layer (15) which includes a semiconductor region (5) and a conductor region (7) that contacts with the semiconductor region; a source electrode (6s) and a drain electrode (6d) which are electrically connected to the semiconductor region; an insulating layer (11) formed on the source and drain electrodes; a transparent electrode (9) arranged to overlap at least partially with the conductor region with the insulating layer interposed between them; a source line (6a) formed out of the same conductive film as the source electrode; and a gate extended line (3a) formed out of the same conductive film as a gate electrode (3). The source line is electrically connected to the gate extended line via a transparent connecting layer (9a) which is formed out of the same conductive film as the transparent electrode.

Abstract: This semiconductor device (100A) includes: a gate electrode (3) formed on a substrate (2); a gate insulating layer (4) formed on the gate electrode; an oxide layer (50) which is formed on the gate insulating layer and which includes a semiconductor region (51) and a conductor region (55); source and drain electrodes (6s, 6d) electrically connected to the semiconductor region; a protective layer (11) formed on the source and drain electrodes; and a transparent electrode (9) formed on the protective layer. At least part of the transparent electrode overlaps with the conductor region with the protective layer interposed between them. The upper surface of the conductor region contacts with a reducing insulating layer (61) with the property of reducing an oxide semiconductor included in the oxide layer. The reducing insulating layer is out of contact with the channel region of the semiconductor region.

Abstract: This semiconductor device (100) includes: a gate electrode (3); a gate insulating layer (4); an oxide layer (50) which is formed on the gate insulating layer (4) and which includes a first conductor region (55) and a first semiconductor region (51) that overlaps at least partially with the gate electrode (3) with the gate insulating layer (4) interposed between them; a source electrode (6s) formed to contact with the upper surface of the first semiconductor region (51) of the oxide layer (50); a drain electrode (6d) which is formed to contact with the upper surface of the first semiconductor region (51) of the oxide layer (50) and which is electrically connected to the first conductor region (55); and a conductive layer (60) which is formed in contact with the upper surface of the oxide layer (50) and which a plurality of holes (66) or notches.

Abstract: The TFT substrate (10) of this liquid crystal display device (100) includes: a TFT (11) which is provided for each pixel; an upper electrode (12) which is electrically connected to the TFT's drain electrode (11d); a lower electrode (13) which is arranged under the upper electrode; and a dielectric layer (14) which is arranged between the upper and lower electrodes. Its counter substrate (20) includes a counter electrode (21) which faces the upper electrode. The upper electrode has first and second regions (R1, R2) which have mutually different electrode structures, and a third region (R3) which electrically connects the first and second regions to the drain electrode. The third region of the upper electrode includes a symmetrical connecting portion (12c) that is a conductive film pattern, of which the shape is substantially symmetrical with respect to a virtual line (L1) that splits each pixel into two adjacent regions in a row direction.

Abstract: At the time of partial drive, the levels of voltages applied to data lines SL1 to SLn are switched according to a rewrite frequency set for each region of a display screen. For example, in a still-image display region with a relatively low rewrite frequency, the levels of the voltages applied to the data lines SL1 to SLn are set to be higher than those for a moving-image display region with a relatively high rewrite frequency. By this, the same effect as that obtained when a counter voltage is switched according to the rewrite frequency can be obtained. Thus, flicker occurring in each region of the display screen can be suppressed.

Abstract: In a display control circuit (200) of a display device, an image pattern detection portion (230) detects whether an image is an anti-flicker pattern or not, and when it is an anti-flicker pattern, a backlight source is driven (typically, such that its luminance changes in the opposite phase relative to luminance changes that would occur), on the basis of predicted values, which are predetermined so as to compensate for the luminance changes that would occur. Moreover, the backlight is not turned on during the scanning period. As a result, flicker due to current leakage, etc., can be reduced or eliminated in a display device for which a scanning period and a scan stop period are set.

Abstract: In order to suppress crosstalk between a pixel electrode and a source line to reduce flicker, an LCD device includes: gate lines 102 and source lines 105 which are provided in a grid pattern; pixel electrodes 111 arranged in a matrix pattern so as to correspond to intersections of the gate lines and the source lines; a transparent auxiliary capacitor electrode 109; and switching elements 121 configured to apply an image signal voltage supplied from the source line 105 to the pixel electrode 111 according to a scanning signal applied from the gate line 102. The switching element 121 is formed by using an oxide semiconductor layer 104, and the transparent auxiliary capacitor electrode 109 is provided between the source line 105 and the pixel electrode 111.

Abstract: Provided is a liquid crystal display device with reduced power consumption employing a CS drive method. A CS driver (500) consists of a CS shift register (510) and a CS output portion (520). The CS shift register (510) outputs control signals (COUT(1) to COUT(m)) in accordance with a CS clock signal CCK. The CS output portion (520) outputs auxiliary capacitance signals (CSS(1) to CSS(m)) in accordance with the control signals (COUT(1) to COUT(m)), respectively. An idle period (T2) is set following a scanning period (T1). During the idle period (T2), the CS driver (500) is driven in accordance with the CS clock signal (CCK) at an idle-period CS frequency (fcck2). The idle-period CS frequency (fcck2) is lower than a scanning-period CS frequency (fcck1).

Abstract: A semiconductor layer for an active element included in each of a plurality of pixels in a display section is constituted by an oxide layer containing at least one element selected from the group consisting of In, Ga, and Zn. There is provided, for the display section, a liquid crystal panel's timing controller (13) configured to carry out control so that (i) a length of a first period during which image data is written is not more than twice that of the second period and/or (ii) one (1) frame period is longer than 16.7 msec.

Abstract: There is provided a display device capable of displaying an image that barely changes with low power consumption on the basis of video data included in a transmitted command, and there is also provided a method for driving the same. A display timing controller (31) determines every frame period whether or not an externally transmitted command includes updated video data. As a result, when it is determined that no updated video data is included, screen refreshing is paused by not reading video data stored in frame memory (36). Moreover, when it is determined that updated video data is included, the screen refreshing is performed by reading video data stored in the frame memory (36).

Abstract: There is provided an SSD display device with reduced power consumption. A selection circuit (400) consists of k selection blocks (410(1) to 410(k)). Each selection block consists of three thin-film transistors. The three thin-film transistors respectively have three phases of selection control signal (CT) provided to their gate terminals. A scanning period (T1) is provided and followed by an idle period (T2). In the idle period (T2), the three thin-film transistors in each selection block are brought into ON state in accordance with selection control signals (CT) at an idle period frequency (fck2). The idle period frequency (fck2) is lower than a scanning period frequency (fck1).

Abstract: There is provided a display device capable of displaying an image that barely changes with low power consumption on the basis of video data included in a transmitted command, and there is also provided a method for driving the same. A display timing controller (31) determines every frame period whether or not an externally transmitted command includes updated video data. As a result, when it is determined that no updated video data is included, screen refreshing is paused by not reading video data stored in frame memory (36). Moreover, when it is determined that updated video data is included, screen refreshing is performed by reading video data stored in the frame memory (36).

Abstract: There is provided an SSD display device with reduced power consumption. A selection circuit (400) consists of k selection blocks (410(1) to 410(k)). Each selection block consists of three thin-film. transistors. The three thin-film transistors respectively have three phases of selection control signal (CT) provided to their gate terminals. A scanning period (T1) is provided and followed by an idle period (T2). In the idle period (T2), the three thin-film transistors in each selection block are brought into ON state in accordance with selection control signals (CT) at an idle period frequency (fck2). The idle period frequency (fck2) is lower than a scanning period frequency (fck1).