Abstract: A ceramic heater includes a ceramic plate having a wafer placement surface on which a wafer is to be placed, and incorporating a resistance heating element therein, and a ceramic tubular shaft having one end joined to a rear surface of the plate. The tubular shaft has a vertical sectional shape including an S-like portion or a curved portion having an inflection point in at least one position, and includes a through-hole penetrating the tubular shaft from the one end to the other end with an axis extending along the vertical sectional shape of the tubular shaft.

Abstract: A ceramic heater includes a disk-shaped ceramic plate with an upper surface defining a wafer placement surface on which a wafer is to be placed. One or more inner-peripheral-side heater elements are embedded in an inner peripheral zone of the ceramic plate, and one or more outer-peripheral-side heater elements are embedded in an outer peripheral zone of the ceramic plate. A thickness of the ceramic plate in a predetermined zone is 3.9% or less of a diameter of the ceramic plate. The predetermined zone is a zone including a boundary line between the inner peripheral zone and the outer peripheral zone.

Abstract: A wafer support of the present invention includes shield sheet embedded in the ceramic base between the plasma generation electrode and the heater electrode in a state not contacting both the electrodes; and a shield pipe electrically connected to the shield sheet and laid to extend to outside of the ceramic base from the surface of the ceramic base on the side opposite to the wafer placement surface, wherein the wiring member for the plasma generation electrode is inserted through inside of the shield pipe in a state not contacting the shield pipe, and the wiring member for the heater electrode is disposed outside the shield pipe in a state not contacting the shield pipe.

Abstract: A ceramic heater includes a disk-shaped ceramic plate with an upper surface defining a wafer placement surface on which a wafer is to be placed. One or more inner-peripheral-side heater elements are embedded in an inner peripheral zone of the ceramic plate, and one or more outer-peripheral-side heater elements are embedded in an outer peripheral zone of the ceramic plate. A thickness of the ceramic plate in a predetermined zone is 3.9% or less of a diameter of the ceramic plate. The predetermined zone is a zone including a boundary line between the inner peripheral zone and the outer peripheral zone.

Abstract: A ceramic heater 10 includes a ceramic member 12, a heater element 14, a connection member 16, and an externally conducting member 18. The connection member 16 is a cylindrical metal member embedded in a bottom surface of a hole 12c in the ceramic member 12 so as to reach the heater element 14. The connection member 16 has a diameter D of 3.5 to 5 mm. The connection member 16 includes a circular surface that touches the heater element 14, a cylinder side surface, and a corner portion 16b between the circular surface and the cylinder side surface. The corner portion 16b has a curvature radius R of 0.3 to 1.5 mm. The ratio R/D is within a range of 0.09 to 0.30. The externally conducting member 18 is joined to the connection member 16 with a joining layer 20 interposed therebetween.

Abstract: A high-frequency power supply includes a shaft bonded to one surface of a plate serving as a gas distributor plate. The plate includes a radio-frequency electrode buried therein. The shaft has a through-hole through which a gas flows. The plate and the shaft are made of a ceramic material. The shaft has a double-tube structure including the inner tube and the outer tube . The interior space of the inner tube forms the through-hole. The plate is hermetically solid-state bonded to the inner tube and the outer tube. The shaft is bonded to the center of the plate.

Abstract: A heating device 10 includes a ceramic base 20, a resistance heating element 22, and a hollow shaft 40. The ceramic base 20 includes a central portion 20a and a peripheral portion 20b. The resistance heating element 22 is designed in such a manner that the density of heating in the central portion 20a is 1.4 to 2.0 times that in the peripheral portion 20b. The hollow shaft 40 includes a first section 41 and a second section 42. The thickness tb1 of the first section 41 is 6 to 10 mm. The thickness tb2 of the second section 42 is 0.3 to 0.5 times the thickness tb1 of the first section 41. The length of the first section 41 is 0.4 to 0/8 times the overall length of the hollow shaft 40.

Abstract: A high-frequency power supply 10 includes a shaft 16 bonded to one surface of a plate 12 serving as a gas distributor plate. The plate 12 includes a radio-frequency electrode 14 buried therein. The shaft 16 has a through-hole 20 through which a gas flows. The plate 12 and the shaft 16 are made of a ceramic material. The shaft 16 has a double-tube structure including the inner tube 18 and the outer tube 22. The interior space of the inner tube 18 forms the through-hole 20. The plate 12 is hermetically solid-state bonded to the inner tube 18 and the outer tube 22. The shaft 16 is bonded to the center of the plate 12.

Abstract: A heating device 10 includes a ceramic base 20, a resistance heating element 22, and a hollow shaft 40. The ceramic base 20 includes a central portion 20a and a peripheral portion 20b. The resistance heating element 22 is designed in such a manner that the density of heating in the central portion 20a is 1.4 to 2.0 times that in the peripheral portion 20b. The hollow shaft 40 includes a first section 41 and a second section 42. The thickness tb1 of the first section 41 is 6 to 10 mm. The thickness tb2 of the second section 42 is 0.3 to 0.5 times the thickness tb1 of the first section 41. The length of the first section 41 is 0.4 to 0/8 times the overall length of the hollow shaft 40.

Abstract: A processing device is provided, including a base which holds a processing target. A gas providing passage having a circular cross section is formed in the base, and provides gas to an outer circumference of the base.

Abstract: A heating unit includes: a base having an upper surface; a first heating element buried in an upper part of the base, the upper part including the upper surface, the first heating element having a flat shape almost parallel to the upper surface; and a second heating element buried in a lower part of the base and arranged in a location lower than the first heating element with respect to the upper surface, the lower part being joined to the upper part, and the second heating element having a flat shape. First and second projection patterns have an overlapping portion where the first projection pattern and the second projection pattern partially overlap each other, the first projection pattern representing the first heating element projected on the upper surface of the base, and the second projection pattern representing the second heating element projected the upper surface of the base.

Abstract: According to a related art for evaluating the position accuracy of heaters with respect to the plate, it is necessary to attach an energizing electrode to the heaters, and energize the heaters for a predetermined period to heat the entire plate, before measuring the temperature distribution map. Therefore, there is a problem in that several tens of minutes are required until the temperature distribution map can be measured. As the plate becomes larger, the time required for energizing the heaters to heat the entire plate becomes longer. A technique for evaluating the position accuracy of heaters with respect to the plate, without executing a process for energizing the heaters to heat the plate is disclosed.

Abstract: There is provided a susceptor for semiconductor manufacturing apparatus that offers excellent thermal uniformity of a substrate being secured by vacuum chucking. A susceptor for semiconductor manufacturing apparatus includes an aluminum-nitride support member in which heater electrodes are buried to heat the substrate, a recessed wafer pocket formed on an upper surface of the support member, a through hole formed in the wafer pocket, and a seal band that supports the substrate at a periphery of the wafer pocket, and on an upper surface of the seal band, a plurality of gas channels are formed to allow gas in a chamber to pass through the gas channels from an outer circumference of the seal band toward the wafer pocket.

Abstract: A gas providing member includes a body portion which forms a gas providing passage between the body portion and a processing member which holds the processing target, and the gas providing passage provides gas onto a processing target. In the body portion, a gas reservoir portion located in the gas providing passage is formed.

Abstract: A heating unit includes: a base having an upper surface; a first heating element buried in an upper part of the base, the upper part including the upper surface, the first heating element having a flat shape almost parallel to the upper surface; and a second heating element buried in a lower part of the base and arranged in a location lower than the first heating element with respect to the upper surface, the lower part being joined to the upper part, and the second heating element having a flat shape. First and second projection patterns have an overlapping portion where the first projection pattern and the second projection pattern partially overlap each other, the first projection pattern representing the first heating element projected on the upper surface of the base, and the second projection pattern representing the second heating element projected the upper surface of the base.

Abstract: A substrate processing device is provided, which includes a resistance heating element and a high-frequency electrode, to which a voltage is applied, a power supply member for a resistance heating element, and a power supply member for a high-frequency electrode, which supply power to the resistance heating element and the high-frequency electrode, respectively, a peripheral member disposed close to circumferences of the power supply members, and heat insulators arranged between the power supply members and the peripheral member and having heat resistance to a temperature at least higher than 250° C.

Abstract: A heating device includes a substantially cylindrical shaft joined to a joint surface of a plate-shaped ceramic substrate opposite to a heating surface, the ceramic substrate including a resistance heating element embedded in the ceramic substrate. The shaft includes a flange portion formed in the end joined to the ceramic substrate and a first cylindrical portion connecting to the flange portion, and a ratio D3/D1 of an inner diameter D3 of a joint area in the flange portion and an outer diameter D1 of the first cylindrical portion is not less than 92%.

Abstract: There is provided a susceptor for semiconductor manufacturing apparatus that offers excellent thermal uniformity of a substrate being secured by vacuum chucking. A susceptor for semiconductor manufacturing apparatus includes an aluminum-nitride support member in which heater electrodes are buried to heat the substrate, a recessed wafer pocket formed on an upper surface of the support member, a through hole formed in the wafer pocket, and a seal band that supports the substrate at a periphery of the wafer pocket, and on an upper surface of the seal band, a plurality of gas channels are formed to allow gas in a chamber to pass through the gas channels from an outer circumference of the seal band toward the wafer pocket.

Abstract: A manufacturing method for a substrate heating device comprises forming a base plate having a substrate heating surface in which a resistance heating element is buried, forming a tubular member, joining the tubular member to the base plate, measuring temperature distribution in the substrate heating surface by supplying power to the resistance heating element, and grinding the tubular member according to a grinding condition based on a measurement result of the temperature distribution.

Abstract: A heater including a plate-shaped substrate having a heating surface for heating an object and a heater element provided in the substrate or on its surface. A central axis C2 of a circumscribed circle of the heater element and a central axis C1 of the substrate are not on the same axis and a gap exists between the axes. When manufacturing the heater, a central axis C1 of a resistant heater is specified, thermal uniformity of the heating surface of a preliminary substrate is evaluated, and a central axis C2 of the substrate is specified. The central axis C2 is specified at a position where the thermal uniformity of the heating surface is superior to a case where the central axis C2 of the substrate is located on the central axis C1. Then a substrate having the central axis C2 is formed by subjecting the preliminary substrate to grinding processing.