Abstract: An electrophotographic photosensitive member includes a photoconductive layer, an intermediate layer, and a surface layer. When Si+C atom density in the surface layer is represented by DS×1022 atoms/cm3, the DS is 6.60 or more, and when the maximal value of H/(Si+H) in a distribution of hydrogen quantity in the photoconductive layer in a layer thickness direction is represented by HPmax, the average value of the H/(Si+H) in the second photoconductive region is represented by HP2, the DS and the HP2 satisfy the following expression (1) and the DS and the HPmax satisfy the following expression (2). HP2?0.07×DS?0.38??Expression (1) HPmax?0.04×DS+0.

Abstract: An electron-emitting device manufacturing method includes a first step of forming a conductive film on an insulating layer having an upper surface and a side surface connected to the upper surface via a corner portion so as to extend from the side surface to the upper surface and cover at least a part of the corner portion, and a second step of etching the conductive film in a film thickness direction. At the first step, the conductive film is formed so that film density of the conductive film on the side surface of the insulating layer becomes the same as or higher than film density of the conductive film on the upper portion of the insulating film.

Abstract: An electron-emitting device manufacturing method includes a first step of forming a conductive film on an insulating layer having an upper surface and a side surface connected to the upper surface via a corner portion so as to extend from the side surface to the upper surface and cover at least a part of the corner portion, and a second step of etching the conductive film in a film thickness direction. At the first step, the conductive film is formed so that film density of the conductive film on the side surface of the insulating layer becomes the same as or higher than film density of the conductive film on the upper portion of the insulating film.

Abstract: The present invention provides an electrophotographic photosensitive member in which a photoconductive layer is an amorphous layer that contains a silicon atom as a main component, and a surface layer contains an aluminum atom, a zinc atom and an oxygen atom so as to satisfy Expression (1) and Expression (2): 3.0?100 {y/(x+y)}?7.0 ??(1), and 1.05?z/(1.50x+y)?1.20 ??(2), in Expression (1) and Expression (2), x represents atom % of the aluminum atom contained in the surface layer, y represents atom % of the zinc atom contained in the surface layer, and z represents atom % of the oxygen atom contained in the surface layer.

Abstract: The present invention provides a method for manufacturing an electrophotographic photosensitive member including: forming a first surface layer and a second surface layer of the electrophotographic photosensitive member by supplying a source gas into a reaction vessel so that C2/S2 which are respectively flow rates of CH4 and SiH4 flowing when the second surface layer is formed can be 3 or more and 25 or less, and C1/S1 which are respectively flow rates of CH4 and SiH4 flowing when the first surface layer is formed can be C2/S2 or more but 60 or less, and adjusting the high-frequency power so that P2>P1 can be satisfied which are high-frequency powers respectively when the second surface layer is formed and when the first surface layer is formed, and C/(Si+C) of the first surface layer and C/(Si+C) of the second surface layer can be 0.50 or more and 0.80 or less.

Abstract: In an electrophotographic photosensitive member having a photoconductive layer and, provided on the photoconductive layer, a surface layer constituted of a hydrogenated amorphous silicon carbide, the ratio of the number of atoms of carbon atoms (C) to the sum of the number of atoms of silicon atoms (Si) and number of atoms of carbon atoms (C), C/(Si+C), in the surface layer is from or more to 0.75 or less, and the sum of atom density of the silicon atoms and atom density of the carbon atoms in the surface layer is 6.60×1022 atom/cm3 or more.

Abstract: A radiofrequency wave electrode that is electrically insulated from a microwave introduction portion is provided, or the microwave introduction portion also functions as a radiofrequency wave electrode, and a radiofrequency wave is superimposed on a microwave for generating plasma. With this feature a plasma having an enhanced intensity is generated even in a portion where otherwise the microwave plasma intensity may be low and reaction product may easily adhere to.

Abstract: Disclosed is a plasma processing apparatus including a plasma producing chamber into which a microwave and a plasma producing gas are to be introduced, a processing chamber being able to be communicated with the plasma producing chamber, a wafer table provided inside the processing chamber, for carrying thereon a wafer to be processed, and a partition plate provided at an interface between the plasma producing chamber and the processing chamber, and having openings for connecting the plasma producing chamber and the processing chamber for communication therebetween. The partition plate includes rectifying plates being provided at the openings with predetermined different tilt angles, and a reaction gas discharging nozzle for discharging a reaction gas into the processing chamber.

Abstract: A substrate to be treated is treated in a vacuum chamber in such a state that a rear surface, opposite to a surface to be treated, of the substrate is disposed toward and upstream direction of a treatment gas containing hydrogen atom, by use of hydrogen plasma of the treatment gas. The plasma treatment is performed in such a state that the substrate to be treated is mounted on a substrate mounting table disposed in the chamber so that a surface of a device structure portion is disposed toward the substrate mounting table side.