Patents by Inventor Yuusuke Sugawara

Yuusuke Sugawara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8592936
    Abstract: A photoelectric conversion device includes: a first substrate of which end portions are cut off so as to slope or with a groove shape; a photodiode and an amplifier circuit over the first substrate; a first electrode electrically connected to the photodiode and provided over one end portion of the first substrate; a second electrode electrically connected to the amplifier circuit and provided over an another end portion of the first substrate; and a second substrate having third and fourth electrodes thereon. The first and second electrodes are attached to the third and fourth electrodes, respectively, with a conductive material provided not only at the surfaces of the first, second, third, and fourth electrodes facing each other but also at the side surfaces of the first and second electrodes to increase the adhesiveness between a photoelectric conversion device and a member on which the photoelectric conversion device is mounted.
    Type: Grant
    Filed: June 21, 2012
    Date of Patent: November 26, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Naoto Kusumoto, Kazuo Nishi, Yuusuke Sugawara
  • Patent number: 8481370
    Abstract: The present invention provides a semiconductor device having a structure that can be mounted on a wiring substrate, as for the semiconductor device formed over a thin film-thickness substrate, a film-shaped substrate, or a sheet-like substrate. In addition, the present invention provides a method for manufacturing a semiconductor device that is capable of raising a reliability of mounting on a wiring substrate. One feature of the present invention is to bond a semiconductor element formed on a substrate having isolation to a member that a conductive film is formed via a medium having an anisotropic conductivity.
    Type: Grant
    Filed: August 3, 2006
    Date of Patent: July 9, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazuo Nishi, Hiroki Adachi, Naoto Kusumoto, Yuusuke Sugawara, Hidekazu Takahashi, Daiki Yamada, Yoshikazu Hiura
  • Patent number: 8415664
    Abstract: Techniques are provided for obtaining a photoelectric conversion device having a favorable spectral sensitivity characteristic and reduced variation in output current without a contamination substance mixed into a photoelectric conversion layer or a transistor, and for obtaining a highly reliable semiconductor device including a photoelectric conversion device. A semiconductor device may include, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer.
    Type: Grant
    Filed: October 12, 2011
    Date of Patent: April 9, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tatsuya Arao, Daiki Yamada, Hidekazu Takahashi, Naoto Kusumoto, Kazuo Nishi, Yuusuke Sugawara, Hironobu Takahashi
  • Publication number: 20120256286
    Abstract: A photoelectric conversion device includes: a first substrate of which end portions are cut off so as to slope or with a groove shape; a photodiode and an amplifier circuit over the first substrate; a first electrode electrically connected to the photodiode and provided over one end portion of the first substrate; a second electrode electrically connected to the amplifier circuit and provided over an another end portion of the first substrate; and a second substrate having third and fourth electrodes thereon. The first and second electrodes are attached to the third and fourth electrodes, respectively, with a conductive material provided not only at the surfaces of the first, second, third, and fourth electrodes facing each other but also at the side surfaces of the first and second electrodes to increase the adhesiveness between a photoelectric conversion device and a member on which the photoelectric conversion device is mounted.
    Type: Application
    Filed: June 21, 2012
    Publication date: October 11, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Naoto KUSUMOTO, Kazuo NISHI, Yuusuke SUGAWARA
  • Patent number: 8263926
    Abstract: It is an object to provide a photoelectric conversion device which detects light ranging from weak light to strong light. The present invention relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer, an amplifier circuit including a thin film transistor and a bias switching means, where a bias which is connected to the photodiode and the amplifier circuit is switched by the bias switching means when intensity of incident light exceeds predetermined intensity, and accordingly, light which is less than the predetermined intensity is detected by the photodiode and light which is more than the predetermined intensity is detected by the thin film transistor of the amplifier circuit. By the present invention, light ranging from weak light to strong light can be detected.
    Type: Grant
    Filed: April 1, 2010
    Date of Patent: September 11, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tatsuya Arao, Atsushi Hirose, Kazuo Nishi, Yuusuke Sugawara
  • Patent number: 8258512
    Abstract: An object of the present invention to provide a semiconductor device manufactured in short time by performing the step of forming the thin film transistor and the step of forming the photoelectric conversion layer in parallel, and to provide a manufacturing process thereof. According to the present invention, a semiconductor device is manufactured in such a way that a thin film transistor is formed over a first substrate, a photoelectric conversion element is formed over a second substrate, and the thin film transistor and the photoelectric conversion element are connected electrically by sandwiching a conductive layer between the first and second substrates opposed to each other so that the thin film transistor and the photoelectric conversion element are located between the first and second substrates. Thus, a method for manufacturing a semiconductor device which suppresses the increase in the number of steps and which increases the throughput can be provided.
    Type: Grant
    Filed: April 1, 2010
    Date of Patent: September 4, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazuo Nishi, Junya Maruyama, Naoto Kusumoto, Yuusuke Sugawara
  • Patent number: 8242585
    Abstract: The present invention provides a semiconductor device formed over an insulating substrate, typically a semiconductor device having a structure in which mounting strength to a wiring board can be increased in an optical sensor, a solar battery, or a circuit using a TFT, and which can make it mount on a wiring board with high density, and further a method for manufacturing the same. According to the present invention, in a semiconductor device, a semiconductor element is formed on an insulating substrate, a concave portion is formed on a side face of the semiconductor device, and a conductive film electrically connected to the semiconductor element is formed in the concave portion.
    Type: Grant
    Filed: December 10, 2010
    Date of Patent: August 14, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazuo Nishi, Hiroki Adachi, Junya Maruyama, Naoto Kusumoto, Yuusuke Sugawara, Tomoyuki Aoki, Eiji Sugiyama, Hironobu Takahashi
  • Patent number: 8207591
    Abstract: A photoelectric conversion device includes a first electrode; and, over the first electrode, photoelectric conversion layer that includes a first semiconductor layer having one conductivity, a second semiconductor layer over the first semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer. An insulating layer is over the third semiconductor layer, and a second electrode is over the insulating layer and is electrically connected to the third semiconductor layer through the insulating layer. The third semiconductor layer and a part of the second semiconductor layer are removed in a region of the photoelectric conversion layer that does not overlap the insulating layer.
    Type: Grant
    Filed: August 10, 2011
    Date of Patent: June 26, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yuusuke Sugawara, Kazuo Nishi, Tatsuya Arao, Daiki Yamada, Hidekazu Takahashi, Naoto Kusumoto
  • Patent number: 8207589
    Abstract: A photoelectric conversion device includes: a first substrate of which end portions are cut off so as to slope or with a groove shape; a photodiode and an amplifier circuit over the first substrate; a first electrode electrically connected to the photodiode and provided over one end portion of the first substrate; a second electrode electrically connected to the amplifier circuit and provided over an another end portion of the first substrate; and a second substrate having third and fourth electrodes thereon. The first and second electrodes are attached to the third and fourth electrodes, respectively, with a conductive material provided not only at the surfaces of the first, second, third, and fourth electrodes facing each other but also at the side surfaces of the first and second electrodes to increase the adhesiveness between a photoelectric conversion device and a member on which the photoelectric conversion device is mounted.
    Type: Grant
    Filed: February 12, 2008
    Date of Patent: June 26, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Naoto Kusumoto, Kazuo Nishi, Yuusuke Sugawara
  • Patent number: 8192545
    Abstract: The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.
    Type: Grant
    Filed: June 7, 2011
    Date of Patent: June 5, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshikazu Hiura, Hiroki Adachi, Hironobu Takahashi, Yuusuke Sugawara, Tatsuya Arao, Kazuo Nishi, Yasuyuki Arai
  • Publication number: 20120086006
    Abstract: Techniques are provided for obtaining a photoelectric conversion device having a favorable spectral sensitivity characteristic and reduced variation in output current without a contamination substance mixed into a photoelectric conversion layer or a transistor, and for obtaining a highly reliable semiconductor device including a photoelectric conversion device. A semiconductor device may include, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer.
    Type: Application
    Filed: October 12, 2011
    Publication date: April 12, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Tatsuya Arao, Daiki Yamada, Hidekazu Takahashi, Naoto Kusumoto, Kazuo Nishi, Yuusuke Sugawara, Hironobu Takahashi
  • Patent number: 8138589
    Abstract: In fabrication of a semiconductor device mounted on a wiring board, a semiconductor circuit portion is formed over a glass substrate. Then, an interposer having connection terminals are bonded to the semiconductor circuit portion. After that, the glass substrate is peeled off from the semiconductor circuit portion, and a mold resin is poured to cover the periphery of the semiconductor circuit portion from a direction of the separation plane. Then, the mold resin is heated under predetermined conditions to be hardened.
    Type: Grant
    Filed: September 28, 2010
    Date of Patent: March 20, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yohei Monma, Daiki Yamada, Hidekazu Takahashi, Yuusuke Sugawara, Kazuo Nishi
  • Patent number: 8138004
    Abstract: A manufacturing method of a photoelectric conversion device includes the following steps: forming a first electrode over a substrate; and, over the first electrode, forming a photoelectric conversion layer that includes a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode. The manufacturing method further includes the step of removing a part of the second semiconductor layer and a part of the third semiconductor layer in a region of the photoelectric conversion layer so that the third semiconductor layer does not overlap the first electrode.
    Type: Grant
    Filed: June 23, 2010
    Date of Patent: March 20, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yuusuke Sugawara, Kazuo Nishi, Tatsuya Arao, Daiki Yamada, Hidekazu Takahashi, Naoto Kusumoto
  • Publication number: 20110291090
    Abstract: A manufacturing method of a photoelectric conversion device includes the following steps: forming a first electrode over a substrate; and, over the first electrode, forming a photoelectric conversion layer that includes a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode. The manufacturing method further includes the step of removing a part of the second semiconductor layer and a part of the third semiconductor layer in a region of the photoelectric conversion layer so that the third semiconductor layer does not overlap the first electrode.
    Type: Application
    Filed: August 10, 2011
    Publication date: December 1, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Yuusuke Sugawara, Kazuo Nishi, Tatsuya Arao, Daiki Yamada, Hidekazu Takahashi, Naoto Kusumoto
  • Patent number: 8053816
    Abstract: It is an object of the present invention to obtain a photoelectric conversion device having a favorable spectral sensitivity characteristic and no variation in output current without such a contamination substance mixed into a photoelectric conversion layer or a transistor. Further, it is another object of the present invention to obtain a highly reliable semiconductor device in a semiconductor device having such a photoelectric conversion device.
    Type: Grant
    Filed: March 2, 2007
    Date of Patent: November 8, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tatsuya Arao, Daiki Yamada, Hidekazu Takahashi, Naoto Kusumoto, Kazuo Nishi, Yuusuke Sugawara, Hironobu Takahashi
  • Patent number: 8049157
    Abstract: The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.
    Type: Grant
    Filed: November 18, 2010
    Date of Patent: November 1, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazuo Nishi, Tatsuya Arao, Atsushi Hirose, Yuusuke Sugawara, Naoto Kusumoto, Daiki Yamada, Hidekazu Takahashi
  • Publication number: 20110232571
    Abstract: The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.
    Type: Application
    Filed: June 7, 2011
    Publication date: September 29, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Yoshikazu HIURA, Hiroki ADACHI, Hironobu TAKAHASHI, Yuusuke SUGAWARA, Tatsuya ARAO, Kazuo NISHI, Yasuyuki ARAI
  • Patent number: 7985664
    Abstract: The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.
    Type: Grant
    Filed: November 30, 2009
    Date of Patent: July 26, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshikazu Hiura, Hiroki Adachi, Hironobu Takahashi, Yuusuke Sugawara, Tatsuya Arao, Kazuo Nishi, Yasuyuki Arai
  • Patent number: 7936037
    Abstract: A photo-sensor having a structure which can suppress electrostatic discharge damage is provided. Conventionally, a transparent electrode has been formed over the entire surface of a light receiving region; however, in the present invention, the transparent electrode is not formed, and a p-type semiconductor layer and an n-type semiconductor layer of a photoelectric conversion layer are used as an electrode. Therefore, in the photo-sensor according to the present invention, resistance is increased an electrostatic discharge damage can be suppressed. In addition, positions of the p-type semiconductor layer and the n-type semiconductor layer, which serve as an electrode, are kept away; and thus, resistance is increased and withstand voltage can be improved.
    Type: Grant
    Filed: January 16, 2009
    Date of Patent: May 3, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazuo Nishi, Yuusuke Sugawara, Hironobu Takahashi, Tatsuya Arao
  • Publication number: 20110073981
    Abstract: The present invention provides a semiconductor device formed over an insulating substrate, typically a semiconductor device having a structure in which mounting strength to a wiring board can be increased in an optical sensor, a solar battery, or a circuit using a TFT, and which can make it mount on a wiring board with high density, and further a method for manufacturing the same. According to the present invention, in a semiconductor device, a semiconductor element is formed on an insulating substrate, a concave portion is formed on a side face of the semiconductor device, and a conductive film electrically connected to the semiconductor element is formed in the concave portion.
    Type: Application
    Filed: December 10, 2010
    Publication date: March 31, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Kazuo NISHI, Hiroki ADACHI, Junya MARUYAMA, Naoto KUSUMOTO, Yuusuke SUGAWARA, Tomoyuki AOKI, Eiji SUGIYAMA, Hironobu TAKAHASHI