Patents by Inventor Yuusuke Sugawara

Yuusuke Sugawara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090126790
    Abstract: A photo-sensor having a structure which can suppress electrostatic discharge damage is provided. Conventionally, a transparent electrode has been formed over the entire surface of a light receiving region; however, in the present invention, the transparent electrode is not formed, and a p-type semiconductor layer and an n-type semiconductor layer of a photoelectric conversion layer are used as an electrode. Therefore, in the photo-sensor according to the present invention, resistance is increased an electrostatic discharge damage can be suppressed. In addition, positions of the p-type semiconductor layer and the n-type semiconductor layer, which serve as an electrode, are kept away; and thus, resistance is increased and withstand voltage can be improved.
    Type: Application
    Filed: January 16, 2009
    Publication date: May 21, 2009
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Kazuo Nishi, Yuusuke Sugawara, Hironobu Takahashi, Tatsuya Arao
  • Publication number: 20090121119
    Abstract: The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.
    Type: Application
    Filed: January 8, 2009
    Publication date: May 14, 2009
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazuo Nishi, Tatsuya Arao, Atsushi Hirose, Yuusuke Sugawara, Naoto Kusumoto, Daiki Yamada, Hidekazu Takahashi
  • Patent number: 7531784
    Abstract: An object is to provide a photoelectric conversion device capable of detecting a wider range of illuminance without expansion of a range of an output voltage or output current. The photoelectric conversion device has a photoelectric conversion device including a photoelectric conversion element and an amplifier circuit electrically connected to the photoelectric conversion element, and a bias switching unit for reversing a bias to be applied to the photoelectric conversion device. The bias to be applied to the photoelectric conversion device is reversed with use of the bias switching unit, whereby the photoelectric conversion device can detect a wider range of illuminance without expansion of a range of an output voltage or output current.
    Type: Grant
    Filed: April 25, 2007
    Date of Patent: May 12, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tatsuya Arao, Atsushi Hirose, Kazuo Nishi, Yuusuke Sugawara
  • Patent number: 7492028
    Abstract: A photo-sensor having a structure which can suppress electrostatic discharge damage is provided. Conventionally, a transparent electrode has been formed over the entire surface of a light receiving region; however, in the present invention, the transparent electrode is not formed, and a p-type semiconductor layer and an n-type semiconductor layer of a photoelectric conversion layer are used as an electrode. Therefore, in the photo-sensor according to the present invention, resistance is increased an electrostatic discharge damage can be suppressed. In addition, positions of the p-type semiconductor layer and the n-type semiconductor layer, which serve as an electrode, are kept away; and thus, resistance is increased and withstand voltage can be improved.
    Type: Grant
    Filed: February 10, 2006
    Date of Patent: February 17, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazuo Nishi, Yuusuke Sugawara, Hironobu Takahashi, Tatsuya Arao
  • Patent number: 7485838
    Abstract: The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.
    Type: Grant
    Filed: July 24, 2006
    Date of Patent: February 3, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazuo Nishi, Tatsuya Arao, Atsushi Hirose, Yuusuke Sugawara, Naoto Kusumoto, Daiki Yamada, Hidekazu Takahashi
  • Publication number: 20080308851
    Abstract: A semiconductor device, particularly, a photoelectric conversion element having a semiconductor layer is demonstrated. The photoelectric conversion element of the present invention comprises, over a substrate, a photoelectric conversion layer and first and second electrodes which are electrically connected to the photoelectric conversion layer. The photoelectric conversion element further comprises a wiring board over which a third and fourth electrodes are provided. The characteristic point of the present invention is that a bonding layer, which readily forms an alloy with a conductive material, is formed over the first and second electrodes. This bonding layer improves the bonding strength between the first and third electrodes and the second and fourth electrode, which contributes to the prevention of the connection defect between the substrate and the wiring board and consequentially to high reliability of the photoelectric conversion element.
    Type: Application
    Filed: March 27, 2008
    Publication date: December 18, 2008
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Naoto Kusumoto, Kazuo Nishi, Yuusuke Sugawara
  • Publication number: 20080265351
    Abstract: In fabrication of a semiconductor device mounted on a wiring board, a semiconductor circuit portion is formed over a glass substrate. Then, an interposer having connection terminals are bonded to the semiconductor circuit portion. After that, the glass substrate is peeled off from the semiconductor circuit portion, and a mold resin is poured to cover the periphery of the semiconductor circuit portion from a direction of the separation plane. Then, the mold resin is heated under predetermined conditions to be hardened.
    Type: Application
    Filed: March 27, 2008
    Publication date: October 30, 2008
    Inventors: Yohei Monma, Daiki Yamada, Hidekazu Takahashi, Yuusuke Sugawara, Kazuo Nishi
  • Publication number: 20080203515
    Abstract: A photoelectric conversion device includes: a first substrate of which end portions are cut off so as to slope or with a groove shape; a photodiode and an amplifier circuit over the first substrate; a first electrode electrically connected to the photodiode and provided over one end portion of the first substrate; a second electrode electrically connected to the amplifier circuit and provided over an another end portion of the first substrate; and a second substrate having third and fourth electrodes thereon. The first and second electrodes are attached to the third and fourth electrodes, respectively, with a conductive material provided not only at the surfaces of the first, second, third, and fourth electrodes facing each other but also at the side surfaces of the first and second electrodes to increase the adhesiveness between a photoelectric conversion device and a member on which the photoelectric conversion device is mounted.
    Type: Application
    Filed: February 12, 2008
    Publication date: August 28, 2008
    Inventors: Naoto Kusumoto, Kazuo Nishi, Yuusuke Sugawara
  • Publication number: 20080108205
    Abstract: The present invention provides a semiconductor device formed over an insulating substrate, typically a semiconductor device having a structure in which mounting strength to a wiring board can be increased in an optical sensor, a solar battery, or a circuit using a TFT, and which can make it mount on a wiring board with high density, and further a method for manufacturing the same. According to the present invention, in a semiconductor device, a semiconductor element is formed on an insulating substrate, a concave portion is formed on a side face of the semiconductor device, and a conductive film electrically connected to the semiconductor element is formed in the concave portion.
    Type: Application
    Filed: December 14, 2007
    Publication date: May 8, 2008
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazuo Nishi, Hiroki Adachi, Junya Maruyama, Naoto Kusumoto, Yuusuke Sugawara, Tomoyuki Aoki, Eiji Sugiyama, Hironobu Takahashi
  • Patent number: 7335951
    Abstract: The present invention provides a semiconductor device formed over an insulating substrate, typically a semiconductor device having a structure in which mounting strength to a wiring board can be increased in an optical sensor, a solar battery, or a circuit using a TFT, and which can make it mount on a wiring board with high density, and further a method for manufacturing the same. According to the present invention, in a semiconductor device, a semiconductor element is formed on an insulating substrate, a concave portion is formed on a side face of the semiconductor device, and a conductive film electrically connected to the semiconductor element is formed in the concave portion.
    Type: Grant
    Filed: October 5, 2004
    Date of Patent: February 26, 2008
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazuo Nishi, Hiroki Adachi, Junya Maruyama, Naoto Kusumoto, Yuusuke Sugawara, Tomoyuki Aoki, Eiji Sugiyama, Hironobu Takahashi
  • Publication number: 20080001148
    Abstract: An object of the present invention to provide a semiconductor device manufactured in short time by performing the step of forming the thin film transistor and the step of forming the photoelectric conversion layer in parallel, and to provide a manufacturing process thereof. According to the present invention, a semiconductor device is manufactured in such a way that a thin film transistor is formed over a first substrate, a photoelectric conversion element is formed over a second substrate, and the thin film transistor and the photoelectric conversion element are connected electrically by sandwiching a conductive layer between the first and second substrates opposed to each other so that the thin film transistor and the photoelectric conversion element are located between the first and second substrates. Thus, a method for manufacturing a semiconductor device which suppresses the increase in the number of steps and which increases the throughput can be provided.
    Type: Application
    Filed: May 16, 2005
    Publication date: January 3, 2008
    Inventors: Kazuo Nishi, Junya Maruyama, Naoto Kusumoto, Yuusuke Sugawara
  • Publication number: 20070257248
    Abstract: An object is to provide a photoelectric conversion device capable of detecting a wider range of illuminance without expansion of a range of an output voltage or output current. The photoelectric conversion device has a photoelectric conversion device including a photoelectric conversion element and an amplifier circuit electrically connected to the photoelectric conversion element, and a bias switching unit for reversing a bias to be applied to the photoelectric conversion device. The bias to be applied to the photoelectric conversion device is reversed with use of the bias switching unit, whereby the photoelectric conversion device can detect a wider range of illuminance without expansion of a range of an output voltage or output current.
    Type: Application
    Filed: April 25, 2007
    Publication date: November 8, 2007
    Inventors: Tatsuya Arao, Atsushi Hirose, Kazuo Nishi, Yuusuke Sugawara
  • Publication number: 20070210344
    Abstract: It is an object of the present invention to obtain a photoelectric conversion device having a favorable spectral sensitivity characteristic and no variation in output current without such a contamination substance mixed into a photoelectric conversion layer or a transistor. Further, it is another object of the present invention to obtain a highly reliable semiconductor device in a semiconductor device having such a photoelectric conversion device.
    Type: Application
    Filed: March 2, 2007
    Publication date: September 13, 2007
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Tatsuya ARAO, Daiki YAMADA, Hidekazu TAKAHASHI, Naoto KUSUMOTO, Kazuo NISHI, Yuusuke SUGAWARA, Hironobu TAKAHASHI
  • Publication number: 20070187790
    Abstract: [Abstract]Considering further promotion of high output and miniaturization of a sensor element, it is an object of the present invention to form a plurality of elements in a limited area so that an area occupied by the element is reduced for integration. It is another object to provide a process which improves the yield of a sensor element. According to the present invention, a sensor element using an amorphous silicon film and an output amplifier circuit constituted by a thin film transistor are formed over a substrate having an insulating surface. In addition, a metal layer for protecting an exposed wire when a photoelectric conversion layer of the sensor element is patterned is provided between the photoelectric conversion layer and the wire connected to the thin film transistor.
    Type: Application
    Filed: September 15, 2005
    Publication date: August 16, 2007
    Inventors: Hidekazu Takahashi, Junya Maruyama, Daiki Yamada, Naoto Kusumoto, Kazuo Nishi, Hiroki Adachi, Yuusuke Sugawara
  • Publication number: 20070123005
    Abstract: The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.
    Type: Application
    Filed: September 25, 2006
    Publication date: May 31, 2007
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Yoshikazu Hiura, Hiroki Adachi, Hironobu Takahashi, Yuusuke Sugawara, Tatsuya Arao, Kazuo Nishi, Yasuyuki Arai
  • Publication number: 20070113886
    Abstract: A photoelectric conversion device provided with a photoelectric conversion layer between a first electrode and a second electrode is formed. The first electrode is partially in contact with the photoelectric conversion layer, and a cross-sectional shape of the first electrode in the contact portion is a taper shape. In this case, part of a first semiconductor layer with one conductivity type is in contact with the first electrode. A planer shape in an edge portion of the first electrode is preferably nonangular, that is, a shape in which edges are planed or a curved shape. By such a structure, concentration of an electric field and concentration of a stress can be suppressed, whereby characteristic deterioration of the photoelectric conversion device can be reduced.
    Type: Application
    Filed: November 14, 2006
    Publication date: May 24, 2007
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Tatsuya Arao, Naoto Kusumoto, Daiki Yamada, Hidekazu Takahashi, Kazuo NISHI, Yuusuke Sugawara, Hironobu Takahashi, Shuji Fukai
  • Publication number: 20070045672
    Abstract: The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.
    Type: Application
    Filed: July 24, 2006
    Publication date: March 1, 2007
    Inventors: Kazuo Nishi, Tatsuya Arao, Atsushi Hirose, Yuusuke Sugawara, Naoto Kusumoto, Daiki Yamada, Hidekazu Takahashi
  • Patent number: 7180197
    Abstract: The present invention provides a semiconductor device having a structure that can be mounted on a wiring substrate, as for the semiconductor device formed over a thin film-thickness substrate, a film-shaped substrate, or a sheet-like substrate. In addition, the present invention provides a method for manufacturing a semiconductor device that is capable of raising a reliability of mounting on a wiring substrate. One feature of the present invention is to bond a semiconductor element formed on a substrate having isolation to a member that a conductive film is formed via a medium having an anisotropic conductivity.
    Type: Grant
    Filed: September 29, 2004
    Date of Patent: February 20, 2007
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazuo Nishi, Hiroki Adachi, Naoto Kusumoto, Yuusuke Sugawara, Hidekazu Takahashi, Daiki Yamada, Yoshikazu Hiura
  • Publication number: 20060270114
    Abstract: The present invention provides a semiconductor device having a structure that can be mounted on a wiring substrate, as for the semiconductor device formed over a thin film-thickness substrate, a film-shaped substrate, or a sheet-like substrate. In addition, the present invention provides a method for manufacturing a semiconductor device that is capable of raising a reliability of mounting on a wiring substrate. One feature of the present invention is to bond a semiconductor element formed on a substrate having isolation to a member that a conductive film is formed via a medium having an anisotropic conductivity.
    Type: Application
    Filed: August 3, 2006
    Publication date: November 30, 2006
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazuo Nishi, Hiroki Adachi, Naoto Kusumoto, Yuusuke Sugawara, Hidekazu Takahashi, Daiki Yamada, Yoshikazu Hiura
  • Publication number: 20060260675
    Abstract: The present invention provides a photoelectric conversion device in which a leakage current is suppressed. A photoelectric conversion device of the present invention comprises: a first electrode over a substrate; a photoelectric conversion layer including a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode, wherein an end portion of the first electrode is covered with the first semiconductor layer; an insulating film, and a second electrode electrically connected to the third semiconductor film with the insulating film therebetween, over the insulating film, are formed over the third semiconductor film, and wherein a part of the second semiconductor layer and a part of the third semiconductor layer is removed in a region of the photoelectric conversion layer, which is not covered with the insulating film.
    Type: Application
    Filed: May 16, 2006
    Publication date: November 23, 2006
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yuusuke Sugawara, Kazuo Nishi, Tatsuya Arao, Daiki Yamada, Hidekazu Takahashi, Naoto Kusumoto