Patents by Inventor Zhanjie Li

Zhanjie Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11882361
    Abstract: Aspects of the present disclosure generally relate to optical devices and related methods that facilitate tilt in camera systems, such as tilt of a lens. In one example, an optical device includes a lens, an image sensor disposed below the lens, a plurality of magnets disposed about the lens, and a plurality of: (1) vertical coil structures coiled in one or more vertical planes and (2) horizontal coil structures coiled in one or more horizontal planes. When power is applied, the coil structures can generate magnetic fields that, in the presence of the magnets, cause relative movement of the coil structures and associated structures. The plurality of vertical coil structures are configured to horizontally move the lens. The plurality of horizontal coil structures are configured to tilt the lens when differing electrical power is applied to at least two of the plurality of horizontal coil structures.
    Type: Grant
    Filed: November 19, 2021
    Date of Patent: January 23, 2024
    Assignee: Western Digital Technologies, Inc.
    Inventors: Quang Le, Rajeev Nagabhirava, Kuok San Ho, Zhigang Bai, Zhanjie Li, Xiaoyong Liu, Daniele Mauri
  • Patent number: 11881235
    Abstract: The present disclosure relates to a magnetic recording head having an exchange biased leading shield or leading edge shield (LES). The LES is a bilayer structure. One or more layers are coupled below the LES such that the LES is disposed between the main pole and the one or more layers. The one or more layers exchange bias the LES such that the upper layer of the LES has a magnetization parallel to the magnetization of the trailing shield. The lower layer of the LES has a magnetization that is antiparallel to the magnetization of the upper layer of the LES. The one or more layers set the preferred direction for the lower layer of the LES and sets the LES as a two-domain state without relying upon the anisotropy field (Hk) of either the upper or lower layers of the LES.
    Type: Grant
    Filed: February 22, 2022
    Date of Patent: January 23, 2024
    Assignee: Western Digital Technologies, Inc.
    Inventors: Alexander Goncharov, Zhanjie Li, Terence T. Lam, Suping Song
  • Publication number: 20240010797
    Abstract: A composition contains filler particles dispersed in a matrix material, wherein the matrix material includes: (a) a first polyorganosiloxane that comprises an average of 2 or more succinic anhydride groups per molecule; and (b) a second polyorganosiloxane other than the first polyorganosiloxane; wherein the filler particles are present at a concentration in a range of 15 to 80 volume-percent based on composition volume and wherein the first polyorganosiloxane is present at a concentration sufficient to provide succinic anhydride groups at a concentration of 0.30 to 200 micromoles per gram of matrix material.
    Type: Application
    Filed: January 13, 2022
    Publication date: January 11, 2024
    Inventors: Zhanjie Li, Kyle McDonald, Andrés E. Becerra, Joseph Sootsman, Chi-Hao Chang, Darren Hansen, Dongchan Ahn, Richard Cooper
  • Publication number: 20230419990
    Abstract: The present disclosure generally relates to a bismuth antimony (BiSb) based STO (spin torque oscillator) sensor. The STO sensor comprises a SOT device and a magnetic tunnel junction (MTJ) structure. By utilizing a BiSb layer within the SOT device, a larger spin Hall angle (SHA) can be achieved, thereby improving the efficiency and reliability of the STO sensor.
    Type: Application
    Filed: September 11, 2023
    Publication date: December 28, 2023
    Applicant: Western Digital Technologies, Inc.
    Inventors: Xiaoyong LIU, Zhanjie LI, Quang LE, Brian R. YORK, Cherngye HWANG, Kuok San HO, Hisashi TAKANO
  • Patent number: 11854581
    Abstract: Embodiments of the present disclosure generally relate to a magnetic media drive employing a magnetic recording device. The magnetic recording device comprises a trailing gap disposed adjacent to a first surface of a main pole, a first side gap disposed adjacent to a second surface of the main pole, a second side gap disposed adjacent to a third surface of the main pole, and a leading gap disposed adjacent to a fourth surface of the main pole. A side shield surrounds the main pole and comprises a heavy metal first layer and a magnetic second layer. The first layer surrounds the first, second, and third surfaces of the main pole, or the second, third, and fourth surfaces of the main pole. The second layer surrounds the second and third surfaces of the main pole, and may further surround the fourth surface of the main pole.
    Type: Grant
    Filed: July 8, 2022
    Date of Patent: December 26, 2023
    Assignee: Western Digital Technologies, Inc.
    Inventors: Suping Song, Zhanjie Li, Terence T. Lam, Lijie Guan
  • Patent number: 11848034
    Abstract: The present disclosure generally relates to magnetic recording devices with stable magnetization. The magnetic recording device comprises a lower leading shield, an upper leading shield disposed on the lower leading shield, a main pole disposed above the upper leading shield, a trailing shield disposed above the main pole and upper leading shield, and an upper return pole disposed above the trailing shield. A first non-magnetic layer is disposed between the lower leading shield and the upper leading shield, and a second non-magnetic layer is disposed between the trailing shield and the upper return pole. The lower leading shield has a different domain state than the upper leading shield, and the trailing shield and the upper leading shield have a same domain state. The materials and thickness of the first and second non-magnetic layers result in magnetostatic coupling or anti-ferromagnetic coupling.
    Type: Grant
    Filed: December 3, 2021
    Date of Patent: December 19, 2023
    Assignee: Western Digital Technologies, Inc.
    Inventors: Yingjian Chen, Yonghua Chen, Anna Zheng, Zhanjie Li, Yi Wang, Jian Xiang Shen, Lijie Guan
  • Patent number: 11783853
    Abstract: The present disclosure generally relates to a bismuth antimony (BiSb) based STO (spin torque oscillator) sensor. The STO sensor comprises a SOT device and a magnetic tunnel junction (MTJ) structure. By utilizing a BiSb layer within the SOT device, a larger spin Hall angle (SHA) can be achieved, thereby improving the efficiency and reliability of the STO sensor.
    Type: Grant
    Filed: May 31, 2022
    Date of Patent: October 10, 2023
    Assignee: Western Digital Technologies, Inc.
    Inventors: Xiaoyong Liu, Zhanjie Li, Quang Le, Brian R. York, Cherngye Hwang, Kuok San Ho, Hisashi Takano
  • Publication number: 20230279165
    Abstract: A process to form a crosslinked composition comprising thermally treating a composition at a temperature ? 25° C., in the presence of moisture, and wherein the composition comprises the following components: a) an olefin/silane interpolymer, b) a cure catalyst selected from the following: i) a metal alkoxide, ii) a metal carboxylate, iii) a metal sulfonate, iv) an aryl sulfonic acid, v) a tris-aryl borane, vi) any combination of two or more from i)-v). Also, a composition comprising the following components a and b, as described above. A process to form an olefin/alkoxysilane interpolymer, and the corresponding composition, said process comprising thermally treating a composition comprising the following components: a) an olefin/silane interpolymer, b) an alcohol, and c) a Lewis acid.
    Type: Application
    Filed: June 23, 2021
    Publication date: September 7, 2023
    Applicants: Dow Global Technologies LLC, Dow Silicones Corporation
    Inventors: Jordan C. Reddel, Mark F. Sonnenschein, David S. Laitar, Andrew B. Shah, Bethany M. Neilson, Colin LiPi Shan, David D. Devore, Jozef J. I. Van Dun, Philip D. Hustad, Zhanjie Li, Zachary S. Kean, Ken Kawamoto
  • Patent number: 11749299
    Abstract: Embodiments of the present disclosure generally relate to a magnetic media drive employing a magnetic recording device. The magnetic recording device comprises a trailing gap disposed adjacent to a first surface of a main pole, a first side gap disposed adjacent to a second surface of the main pole, a second side gap disposed adjacent to a third surface of the main pole, and a leading gap disposed adjacent to a fourth surface of the main pole. A side shield surrounds the main pole and comprises a heavy metal first layer and a magnetic second layer. The first layer surrounds the first, second, and third surfaces of the main pole, or the second, third, and fourth surfaces of the main pole. The second layer surrounds the second and third surfaces of the main pole, and may further surround the fourth surface of the main pole.
    Type: Grant
    Filed: September 30, 2020
    Date of Patent: September 5, 2023
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: Suping Song, Zhanjie Li, Terence Lam, Lijie Guan
  • Publication number: 20230265222
    Abstract: An interpolymer, which comprises at least one siloxane group, and prepared by polymerizing a mixture comprising one or more “addition polymerizable monomers” and at least one siloxane monomer, in the presence of a catalyst system comprising a Group 3-10 metal complex, and the siloxane monomer is selected from the following Formula 1: Aa-Si(Bb)(Cc)(Hh0)—O—(Si(Dd)(Ee) (Hh1)—O)x—Si(Ff)(Gg)(Hh2), described herein. An ethylene/siloxane interpolymer comprising at least one chemical unit of Structure 1, or at least one chemical unit of Structure 2, each described herein. A process to form an interpolymer, which comprises, in polymerized form, at least one siloxane monomer, or at least one silane monomer without a siloxane linkage, said process comprising polymerizing a mixture comprising one or more “addition polymerizable monomers” and at least one monomer of Formula 4, described herein, in the presence of a catalyst system comprising a metal complex from Formula A or Formula B, each described herein.
    Type: Application
    Filed: June 23, 2021
    Publication date: August 24, 2023
    Applicants: Dow Global Technologies LLC, Dow Silicones Corporation, Rohm and Haas Company
    Inventors: Liam Spencer, Zachary S. Kean, David D. Devore, Jordan C. Reddel, Bethany M. Neilson, Matthew Olsen, Zhanjie Li, Phillip D. Hustad
  • Publication number: 20230267953
    Abstract: The present disclosure relates to a magnetic recording head having an exchange biased leading shield or leading edge shield (LES). The LES is a bilayer structure. One or more layers are coupled below the LES such that the LES is disposed between the main pole and the one or more layers. The one or more layers exchange bias the LES such that the upper layer of the LES has a magnetization parallel to the magnetization of the trailing shield. The lower layer of the LES has a magnetization that is antiparallel to the magnetization of the upper layer of the LES. The one or more layers set the preferred direction for the lower layer of the LES and sets the LES as a two-domain state without relying upon the anisotropy field (Hk) of either the upper or lower layers of the LES.
    Type: Application
    Filed: February 22, 2022
    Publication date: August 24, 2023
    Applicant: Western Digital Technologies, Inc.
    Inventors: Alexander GONCHAROV, Zhanjie LI, Terence T. LAM, Suping SONG
  • Patent number: 11732175
    Abstract: A non-curable thermally conductive material contains: (a) a matrix material containing: (i) 90 to 98 wt % of a non-functional non-crosslinked organosiloxane fluid having a dynamic viscosity of 50 to 350 centiStokes; and (ii) 2 to less than 10 wt % of a crosslinked hydrosilylation reaction product of an alkenyl terminated polydiorganosiloxane having a degree of polymerization greater than 300 and an organohydrogensiloxane crosslinker with 2 or more SiH groups per molecule where the molar ratio of SiH groups to alkenyl groups is 0.5 to 2.0; (b) greater than 80 wt % to less than 95 wt % thermally conductive filler dispersed throughout the matrix material; and (c) treating agents selected from alkyltrialkoxy silanes where the alkyl contains one to 14 carbon atoms and monotrialkoxy terminated diorganopolysiloxanes having a degree of polymerization of 20 to 110 and the alkoxy groups each contain one to 12 carbon atoms dispersed in the matrix material.
    Type: Grant
    Filed: October 28, 2020
    Date of Patent: August 22, 2023
    Assignee: DOW SILICONES CORPORATION
    Inventors: Dorab Bhagwagar, Cassie Hale, Peng Wei, Qianqing Ge, Yan Zheng, Zhanjie Li
  • Publication number: 20230212447
    Abstract: A non-curable thermally conductive material contains: (a) a matrix material containing: (i) 90 to 98 wt % of a non-functional non-crosslinked organosiloxane fluid having a dynamic viscosity of 50 to 350 centiStokes; and (ii) 2 to less than 10 wt % of a crosslinked hydrosilylation reaction product of an alkenyl terminated polydiorganosiloxane having a degree of polymerization greater than 300 and an organohydrogensiloxane crosslinker with 2 or more SiH groups per molecule where the molar ratio of SiH groups to alkenyl groups is 0.5 to 2.0; (b) greater than 80 wt % to less than 95 wt % thermally conductive filler dispersed throughout the matrix material; and (c) treating agents selected from alkyltrialkoxy silanes where the alkyl contains one to 14 carbon atoms and monotrialkoxy terminated diorganopolysiloxanes having a degree of polymerization of 20 to 110 and the alkoxy groups each contain one to 12 carbon atoms dispersed in the matrix material.
    Type: Application
    Filed: October 28, 2020
    Publication date: July 6, 2023
    Inventors: Dorab Bhagwagar, Cassie Hale, Peng Wei, Qianqing Ge, Yan Zheng, Zhanjie Li
  • Patent number: 11682418
    Abstract: The present disclosure generally relates to data storage devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The head includes a main pole at a media facing surface (MFS), a trailing shield at the MFS, and a heavy metal layer disposed between the main pole and the trailing shield at the MFS. Spin-orbit torque (SOT) is generated from the heavy metal layer and transferred to a surface of the main pole as a current passes through the heavy metal layer in a cross-track direction. The SOT executes a torque on the surface magnetization of the main pole, which reduces the magnetic flux shunting from the main pole to the trailing shield. With the reduced magnetic flux shunting from the main pole to the trailing shield, write-ability is improved.
    Type: Grant
    Filed: July 19, 2022
    Date of Patent: June 20, 2023
    Assignee: Western Digital Technologies, Inc.
    Inventors: Suping Song, Zhanjie Li, Michael Kuok San Ho, Quang Le, Alexander M. Zeltser
  • Publication number: 20230178104
    Abstract: The present disclosure generally relates to magnetic recording devices with stable magnetization. The magnetic recording device comprises a lower leading shield, an upper leading shield disposed on the lower leading shield, a main pole disposed above the upper leading shield, a trailing shield disposed above the main pole and upper leading shield, and an upper return pole disposed above the trailing shield. A first non-magnetic layer is disposed between the lower leading shield and the upper leading shield, and a second non-magnetic layer is disposed between the trailing shield and the upper return pole. The lower leading shield has a different domain state than the upper leading shield, and the trailing shield and the upper leading shield have a same domain state. The materials and thickness of the first and second non-magnetic layers result in magnetostatic coupling or anti-ferromagnetic coupling.
    Type: Application
    Filed: December 3, 2021
    Publication date: June 8, 2023
    Inventors: Yingjian CHEN, Yonghua CHEN, Anna ZHENG, Zhanjie LI, Yi WANG, Jian Xiang SHEN, Lijie GUAN
  • Patent number: 11655369
    Abstract: A composition contains an organopolysiloxane having the average chemical structure (I): [R?R2SiO—(R2SiO)m]3—Si—[OSiR2]n—Y—Si(OR)3??(I) where: R is independently in each occurrence selected from alkyl, aryl, substituted alkyl and substituted alkyl groups having from one to 8 carbon atoms; R? is independently in each occurrence selected from R and terminally unsaturated alkylene groups having from 2 to 6 carbon atoms; Y is selected from a group consisting of: X, and X—(R2SiO)pSiR2—X; where p has an average value in a range of one to 3; and X is independently in each occurrence selected from alkylene and substituted alkylene groups having from one to 6 carbon atoms; and the average values for subscripts m and n are each greater than zero and independently selected so that the average value for the sum of all of the average m values and the average n value is in a range of 30-200.
    Type: Grant
    Filed: October 28, 2020
    Date of Patent: May 23, 2023
    Assignee: DOW SILICONES CORPORATION
    Inventors: Dorab Bhagwagar, Peng Wei, Qianqing Ge, Yan Zheng, Zhanjie Li
  • Publication number: 20230099625
    Abstract: Described herein are methods for making alkenyl disiloxanes, comprising combining an alkenyl halosilane with an alkyl halosilane and adding the mixture to water, an acidic aqueous solution, or a basic aqueous solution. The ratio of the alkenyl halosilane to the alkyl halosilane is about 10:1 to about 1:10. The alkenyl halosilane and the alkyl halosilane are mixed at about 20° C. to about 45° C. The reaction product is separated and washed with saturated alkali carbonate solution.
    Type: Application
    Filed: December 11, 2020
    Publication date: March 30, 2023
    Applicant: DOW SILICONES CORPORATION
    Inventors: Xiaoyuan ZHOU, Zhanjie LI, Eric JOFFRE
  • Patent number: 11615809
    Abstract: The present disclosure generally relates to spin-orbital torque (SOT) differential reader designs. The SOT differential reader is a multi-terminal device that comprises a first shield, a first spin hall effect layer, a first free layer, a gap layer, a second spin hall effect layer, a second free layer, and a second shield. The gap layer is disposed between the first spin hall effect layer and the second spin hall effect layer. Electrical lead connections are located about the first spin hall effect layer, the second spin hall effect layer, the gap layer, the first shield, and/or the second shield. The electrical lead connections facilitate the flow of current and/or voltage from a negative lead to a positive lead. The positioning of the electrical lead connections and the positioning of the SOT differential layers improves reader resolution without decreasing the shield-to-shield spacing (i.e., read-gap).
    Type: Grant
    Filed: August 5, 2021
    Date of Patent: March 28, 2023
    Assignee: Western Digital Technologies, Inc.
    Inventors: Quang Le, Xiaoyong Liu, Zhigang Bai, Zhanjie Li, Kuok San Ho, Hisashi Takano
  • Publication number: 20230090031
    Abstract: A composition contains an organopolysiloxane having the average chemical structure (I): [R?R2SiO—(R2SiO)m]3—Si—[OSiR2]n—Y—Si(OR)3??(I) where: R is independently in each occurrence selected from alkyl, aryl, substituted alkyl and substituted alkyl groups having from one to 8 carbon atoms; R? is independently in each occurrence selected from R and terminally unsaturated alkylene groups having from 2 to 6 carbon atoms; Y is selected from a group consisting of: X, and X—(R2SiO)pSiR2—X; where p has an average value in a range of one to 3; and X is independently in each occurrence selected from alkylene and substituted alkylene groups having from one to 6 carbon atoms; and the average values for subscripts m and n are each greater than zero and independently selected so that the average value for the sum of all of the average m values and the average n value is in a range of 30-200.
    Type: Application
    Filed: October 28, 2020
    Publication date: March 23, 2023
    Inventors: Dorab Bhagwagar, Peng Wei, Qianqing Ge, Yan Zheng, Zhanjie Li
  • Publication number: 20230056138
    Abstract: Described herein are methods for making alkenyl disiloxanes, comprising combining an alkenyl halosilane with a bis-hydrido terminated alkyl disiloxane and adding the mixture to water, an acidic aqueous solution, or a basic aqueous solution. The ratio of the alkenyl halosilane to the bis-hydrido terminated alkyl disiloxane is about 1:10 to about 10:1. The alkenyl halosilane and bis-hydrido terminated alkyl disiloxane are mixed at about 20° C. to about 45° C. In an example, no organic solvent is present. The reaction product is separated and washed with saturated NaHCO3 solution (e.g., sodium bicarbonate).
    Type: Application
    Filed: December 11, 2020
    Publication date: February 23, 2023
    Applicant: DOW SILICONES CORPORATION
    Inventors: Xiaoyuan ZHOU, Zhanjie LI, Eric JOFFRE