Abstract: A magnetic recording head includes a trailing shield, a main pole, and a spin Hall layer. The spin Hall layer is disposed between the trailing shield and the main pole. A first spin torque layer is disposed between the spin Hall layer and the trailing shield. A second spin torque layer is disposed between the spin Hall layer and the main pole.

Abstract: A perpendicular magnetic recording write head includes a heater on one side of the pole tip of the main pole and a heat sink on the opposite side of the pole tip. The heater is formed of high resistivity material and is connected to a power source. During writing, power is applied to the heater, which causes a relatively large temperature gradient across the pole tip from the heater to the heat sink. The temperature gradient increases the damping of the ferromagnetic material of the main pole during writing, which increases the switching speed of the main pole.

Abstract: A platinum organosiloxane complex is prepared by a process including 1) combining A) a platinous halide and B) a ketone, and thereafter 2) adding C) a polyorganosiloxane having, per molecule, 2 to 4 silicon bonded terminally unsaturated hydrocarbon groups having from 2 to 6 carbon. The platinum organosiloxane complex prepared by the process is useful as a hydrosilylation catalyst.

Abstract: A MRAM cell includes a magnetic tunnel junction containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, a spin torque oscillator stack, and a first nonmagnetic spacer layer located between the free layer and the spin torque oscillator stack.

Abstract: A MRAM device includes a magnetic tunnel junction containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, a negative-magnetic-anisotropy assist layer having negative magnetic anisotropy that provides an in-plane magnetization within a plane that is perpendicular to the fixed magnetization direction, and a first nonmagnetic spacer layer located between the free layer and the negative-magnetic-anisotropy assist layer.

Abstract: A perpendicular magnetic recording write head includes a main portion formed of conventional high-moment magnetic materials, and a beveled or tapered trailing portion formed of a Co/Fe multilayer with negative magnetic anisotropy (negative anisotropy constant or —Ku). The Co/Fe multilayer tapered trailing portion has a high saturation magnetization (Ms) and thus functions as part of the write pole to direct the flux perpendicularly to the recording layer. Also, the —Ku Co/Fe multilayer tapered trailing portion has its hard axis oriented substantially orthogonal to the layer thickness and thus substantially prevents flux leakage into the write gap. The —Ku Co/Fe multilayer may also be formed on the sides of the write pole in the cross-track direction to prevent flux leakage into the side gaps.

Abstract: The present disclosure generally relates to data storage devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The head includes a main pole at a media facing surface (MFS), a trailing shield at the MFS, a heavy metal layer disposed between the main pole and the trailing shield at the MFS, and a yttrium-iron garnet (YIG) layer. Spin-orbit torque (SOT) is generated from the heavy metal layer and transferred to a surface of the main pole as a current passes through the heavy metal layer in a cross-track direction. The YIG layer is an electrical insulator, but also a good spin current conductor. Thus the charge current can be fully utilized for spin current conversion. The YIG layer does not dissipate energy because there is no shunting. With the reduced shunting from the main pole to the trailing shield, write-ability is improved.

Abstract: The present disclosure generally relates to data storage devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The head includes a main pole at a media facing surface (MFS), a trailing shield at the MFS, and a heavy metal layer disposed between the main pole and the trailing shield at the MFS. Spin-orbit torque (SOT) is generated from the heavy metal layer and transferred to a surface of the main pole as a current passes through the heavy metal layer in a cross-track direction. The SOT executes a torque on the surface magnetization of the main pole, which reduces the magnetic flux shunting from the main pole to the trailing shield. With the reduced magnetic flux shunting from the main pole to the trailing shield, write-ability is improved.

Abstract: A MRAM device includes a spin valve containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic metallic barrier layer located between the reference layer and the free layer, a metallic assist structure configured to provide rotating spin transfer torque to the free layer to assist the free layer switching during programming, and a first nonmagnetic metallic spacer layer located between the free layer and the metallic assist structure.

Abstract: A platinum organosiloxane complex is prepared by a process including combining A) a platinous halide; B) a ketone; C) an enone additive distinct from any other starting materials or rearrangement products thereof; and D) a polyorganosiloxane having, per molecule, 2 to 4 silicon bonded terminally unsaturated hydrocarbon groups having from 2 to 6 carbon. The platinum organosiloxane complex prepared by the process is useful as a hydrosilylation catalyst.

Abstract: A MRAM device includes a spin valve containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic metallic barrier layer located between the reference layer and the free layer, a metallic assist structure configured to provide rotating spin transfer torque to the free layer to assist the free layer switching during programming, and a first nonmagnetic metallic spacer layer located between the free layer and the metallic assist structure.

Abstract: A MRAM device includes a magnetic tunnel junction containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, a negative-magnetic-anisotropy assist layer having negative magnetic anisotropy that provides an in-plane magnetization within a plane that is perpendicular to the fixed magnetization direction, and a first nonmagnetic spacer layer located between the free layer and the negative-magnetic-anisotropy assist layer.

Abstract: A MRAM cell includes a magnetic tunnel junction containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, a spin torque oscillator stack, and a first nonmagnetic spacer layer located between the free layer and the a spin torque oscillator stack.

Abstract: A platinum organosiloxane complex is prepared by a process including 1) combining A) a platinous halide and B) a ketone, and thereafter 2) adding C) a polyorganosiloxane having, per molecule, 2 to 4 silicon bonded terminally unsaturated hydrocarbon groups having from 2 to 6 carbon. The platinum organosiloxane complex prepared by the process is useful as a hydrosilylation catalyst.

Abstract: A MRAM device includes a magnetic tunnel junction containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, a first magnetic assist layer, a second magnetic assist layer, an antiferromagnetic coupling spacer layer located between the first and second magnetic assist layers, and a first nonmagnetic spacer layer located between the free layer and the first magnetic assist layer. The antiferromagnetic coupling spacer layer is configured to provide antiferromagnetic coupling between a first magnetization direction of the first magnetic assist layer and a second magnetization direction of the second magnetic assist layer.

Abstract: A magnetic recording device includes a main pole, a coil around the main pole, a trailing shield, and a spin torque oscillation device between the main pole and the trailing shield. The spin torque oscillation device includes one or more first layers, a spacer layer, and a field generation layer. The one or more first layers are over the main pole. The one or more first layers have a first heat conductance or include a low-heat-conductance material. The spacer layer is over the one or more first layers. The field generation layer is over the spacer layer. A heat sink is in contact with the trailing shield. The heat sink has a second heat conductance or includes a high-heat-conductance material. The second heat conductance of the heat sink is higher than the first heat conductance of the one or more first layers.

Abstract: A platinum organosiloxane complex is prepared by a process including combining A) a platinous halide; B) a ketone; C) an enone additive distinct from any other starting materials or rearrangement products thereof; and D) a polyorganosiloxane having, per molecule, 2 to 4 silicon bonded terminally unsaturated hydrocarbon groups having from 2 to 6 carbon. The platinum organosiloxane complex prepared by the process is useful as a hydrosilylation catalyst.

Abstract: The present disclosure generally relates to magnetic media devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The recording head includes a main pole, a trailing shield hot seed layer, a spin Hall layer disposed between the main pole and the trailing shield hot seed layer, and a spin-torque layer disposed between the main pole and the trailing shield hot seed layer. Spin-orbit torque (SOT) is generated from the spin Hall layer. The spin-torque layer magnetization switching or precession is induced by the SOT. The SOT based head reduces the switching current and the Vjump due to higher spin polarization ratio, which improves energy efficiency. In addition, the spin Hall layer and the spin-torque layer are easier to form compared to the conventional pseudo spin-valve structure.

Abstract: The present invention provides unified synthesis of the CI-CI 9 building blocks of halichondrins and analogs thereof using selective coupling of poly-halogenated nucleophiles in chromium-mediated coupling reactions. The present invention also provides a practical and efficient synthesis of C20-C38 building blocks of halichondrins and analogs thereof. Also provided herein are general methods of selective activation and coupling of poly-halogenated analogs with an aldehyde. The provided coupling reactions are selective for halo-enone and halo-acetylenic ketal over vinyl halide and halide attached to a sp hydridized carbon. The provided efficient selective coupling reactions can allow easy access to the CI-CI 9 building blocks and C20-C38 building blocks of halichondrins and analogs thereof with limited or no purification or separation of the intermediates.

Abstract: The present invention provides unified synthesis of the C1-C19 building blocks of halichondrins and analogs thereof using selective coupling of poly-halogenated nucleophiles in chromium-mediated coupling reactions. The present invention also provides a practical and efficient synthesis of C20-C38 building blocks of halichondrins and analogs thereof. Also provided herein are general methods of selective activation and coupling of poly-halogenated analogs with an aldehyde. The provided coupling reactions are selective for halo-enone and halo-acetylenic ketal over vinyl halide and halide attached to a sp hybridized carbon. The provided efficient selective coupling reactions can allow easy access to the C1-C19 building blocks and C20-C38 building blocks of halichondrins and analogs thereof with limited or no purification or separation of the intermediates.