Patents by Inventor Zhanjie Li

Zhanjie Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7957179
    Abstract: Techniques and device designs associated with devices having magnetically shielded magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves that are configured to operate based on spin-transfer torque switching.
    Type: Grant
    Filed: June 27, 2007
    Date of Patent: June 7, 2011
    Assignee: Grandis Inc.
    Inventors: Yunfei Ding, Zhanjie Li
  • Publication number: 20100214835
    Abstract: Techniques and device designs associated with devices having magnetically shielded magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves that are configured to operate based on spin-transfer torque switching.
    Type: Application
    Filed: June 27, 2007
    Publication date: August 26, 2010
    Inventors: Yunfei Ding, Zhanjie Li
  • Patent number: 7486551
    Abstract: A method and system for providing a magnetic element is described. The magnetic element includes a pinned layer, a spacer layer, and a free layer. The spacer layer is nonferromagnetic and resides between the pinned layer and the free layer. The free layer includes a first magnetic layer and at least one of a second magnetic layer and an intermediate layer. The intermediate layer would reside between the first and second magnetic layers. The free layer also includes at least one domain wall therein during switching. In addition, the magnetic element is configured to allow the free layer to be switched at least in part due to spin transfer when a write current is passed through the magnetic element.
    Type: Grant
    Filed: April 3, 2007
    Date of Patent: February 3, 2009
    Assignee: Grandis, Inc.
    Inventors: Zhanjie Li, Shengyuan Wang
  • Patent number: 7486552
    Abstract: A method and system for providing a magnetic element is described. The magnetic element includes a first pinned layer, a first spacer layer, a free layer, a second spacer layer, and a second pinned layer. The first and second pinned layers have first and magnetizations oriented in first and second directions, respectively. The first and second spacer layers are nonferromagnetic. The first and second spacer layers are between the free layer and the first and second pinned layers, respectively.
    Type: Grant
    Filed: June 15, 2007
    Date of Patent: February 3, 2009
    Assignee: Grandis, Inc.
    Inventors: Dmytro Apalkov, Zhanjie Li
  • Publication number: 20080291721
    Abstract: A method and system for providing a magnetic element is described. The magnetic element includes a first pinned layer, a first spacer layer, a free layer, a second spacer layer, and a second pinned layer. The first and second pinned layers have first and magnetizations oriented in first and second directions, respectively. The first and second spacer layers are nonferromagnetic. The first and second spacer layers are between the free layer and the first and second pinned layers, respectively.
    Type: Application
    Filed: June 15, 2007
    Publication date: November 27, 2008
    Applicant: GRANDIS, INC.
    Inventors: Dmytro Apalkov, Zhanjie Li