Abstract: A device remote access method includes receiving, by a bus filter driver on a thin client (TC) side, a request for remote access by a virtual machine (VM) side to a physical device on the TC side, converting, by the bus filter driver, the request for remote access into a remote operation instruction that may be read by a physical device driver, and sending, by the bus filter driver, the remote operation instruction to the physical device driver, where the remote operation instruction is used to instruct the physical device driver to drive the physical device to execute a read/write operation and return remote response data that carries an execution result of the read/write operation which implements remote access by the VM side to the physical device on the TC side, and because a device driver is not modified, the TC side may continue to normally access the physical device.

Abstract: A method for fabricating non-volatile memory device is disclosed. The method includes the steps of: providing a substrate having a stack structure thereon; performing a first oxidation process to form a first oxide layer on the substrate and the stack structure; etching the first oxide layer for forming a first spacer adjacent to the stack structure; performing a second oxidation process to form a second oxide layer on the substrate; forming a dielectric layer on the first spacer and the second oxide layer; and etching the dielectric layer for forming a second spacer.

Abstract: A method is provided for loading a rendering engine of a browser on a mobile terminal. The method includes receiving a user interface installation file and a rendering engine file separately and independently when an update to the browser is needed, wherein the user interface installation file includes a user interface module and an interface adapter module. The method also includes installing the received user interface installation file. Further, the method includes loading dynamically a corresponding function file and an object library file in the rendering engine file through the interface adapter module when an application runs. The corresponding function file and the object library file are not compiled together with the user interface adapter module.

Abstract: A semiconductor process is described. A semiconductor substrate having a memory area, a first device area and a second device area is provided. A patterned charge-trapping layer is formed on the substrate, covering the memory area and the second device area but exposing the first device area. A first gate oxide layer is formed in the first device area. The charge-trapping layer in the second device area is removed. A second gate oxide layer is formed in the second device area.

Abstract: An automated system for painting a shoe sole portion of a shoe is provided. The automated painting system is adapted to use a variety of stations and components to automatically paint a side surface of the shoe sole portion while it is secured in a jig, transition the jig to an open position, and remove the painted shoe sole portion from the jig.

Abstract: A self contained fire extinguisher system that does not need external power in order to sense or initiate a release of a fire suppression medium, includes components configured to utilize a linear sensor network that can be connected to at least one and/or different sources of fire suppression mediums. A linear temperature sensing cord can be routed over a large area not practical with individual sensors. The cord can also actuate several and different sources of fire suppression mediums to maximize the suppression of a fire.

Abstract: A hydrogenation catalyst system is provided. The catalyst system includes a metal complex of Formula (I), an organic lithium compound and an organic compound having a cyclic structure including at least one double bond. In Formula (I), M is transition metals. R1, R2, R3, R4 and R5 are the same or different, including hydrogen, C1-8 alkyl, and C1-8 alkoxy, or two of R1, R2, R3, R4 and R5 are linked together to form a ring. X1, X2 and X3 are a cyclic group, hydrogen, chlorine, bromine, alkyl or alkoxy, wherein when one of X1, X2 and X3 is a cyclic group, and the others are the same or different, including hydrogen, chlorine, bromine, alkyl or alkoxy. The invention also provides a selective hydrogenation process utilizing the catalyst system.

Abstract: The present invention relates to the novel flavor and fragrance use of 2,6-dipropyl-5,6-dihydro-2H-thiopyran-3-carbaldehyde.

Abstract: A method of fabricating source/drain region in a substrate includes the steps of: introducing an ion beam-line of a first material to a surface of the substrate at a first energy and a first dosage to implant the substrate with dopants of a first conductive type; and subsequently, introducing a plasma of a second material to the surface. The ion beam-line is introduced, at a second energy and a second dosage to implant the substrate with dopants of the first conductive type. The second dosage is greater than the first dosage and the implant depth of the plasma is less than the implant depth of the ion beam-line.

Abstract: A receiver lock is provided. The receiver lock includes a lock rod having a distal portion configured to extend through aligned apertures of an insert and an accessory receiver to prevent removal of the insert from the accessory receiver. The distal portion includes an annular groove adjacent a distal end of the distal portion. A lock assembly is detachably mountable to the lock rod and includes a lock housing including a lock mechanism having a distal wall portion. The lock mechanism is rotatable relative to the lock housing from an unlocked configuration for receiving the distal end including the annular groove of the lock rod to a locked configuration for moving the distal wall portion of the lock mechanism into the received annular groove of the lock rod for locking the lock rod to the lock assembly thereby preventing withdrawal of the lock rod from the aligned apertures.

Abstract: The present invention provides a method of fabricating a memory structure, especially forming an oxide on top of a spacer to prevent the spacer from being over-etched, the method comprising the steps of: providing a semiconductor substrate; forming a charge trapping layer, a first conducting layer and a capping layer as a gate stack on the substrate; forming a first gate structure by patterning; a plurality of spacers are patterned and disposed adjacent to the sidewall of said gate stack; depositing a second conducting layer on the substrate to cover the first gate structure and the spacer; selectively etching the second conducting layer to expose the top of the spacer; performing an oxidation process to form an oxide on top of the spacer.

Abstract: A catalyst system includes a transition metal salt containing a halo group, an acetate group, or a combination thereof, and an organic phosphine ligand. The molar ratio of the organic phosphine ligand to the transition metal salt is greater than 0 and less than or equal to 50.

Abstract: A method of making multi-level contacts. The method includes providing an in-process multilevel device including at least one device region and at least one contact region. The contact region includes a plurality of electrically conductive layers configured in a step pattern. The method also includes forming a conformal etch stop layer over the plurality of electrically conductive layers, forming a first electrically insulating layer over the etch stop layer, forming a conformal sacrificial layer over the first electrically insulating layer and forming a second electrically insulating layer over the sacrificial layer. The method also includes etching a plurality of contact openings through the etch stop layer, the first electrically insulating layer, the sacrificial layer and the second electrically insulating layer in the contact region to the plurality of electrically conductive layers.

Abstract: The present disclosure provides a method for preparing a molecular sieve catalyst. A water-in-oil micro-emulsion including a continuous phase containing an organic solvent and a dispersed phase containing an aqueous solution containing one or more metal salts and a water-soluble organic carbon source is prepared, hydrolyzed, and azeotropically distilled to form a mixture solution. The mixture solution is heated to carbonize the water-soluble organic carbon source to form nanoparticles each having a core-shell structure including a carbon-shelled metal-oxide. The nanoparticles containing the carbon-shelled metal-oxide are dispersed in a molecular sieve precursor solution. A nanoparticle-loaded molecular sieve is formed from the molecular sieve precursor solution containing the nanoparticles, and then calcined to remove carbon there-from to form a metal-oxide loaded molecular sieve.

Abstract: An automated system for painting a shoe sole portion of a shoe is provided. The automated painting system is adapted to use a variety of stations and components to automatically paint a side surface of the shoe sole portion while it is secured in a jig, transition the jig to an open position, and remove the painted shoe sole portion from the jig.

Abstract: A flash memory structure includes a memory gate on a substrate, a select gate adjacent to the memory gate, and an oxide-nitride spacer between the memory gate and the select gate, where the oxide-nitride spacer further includes an oxide layer and a nitride layer having an upper nitride portion and a lower nitride portion, and the upper nitride portion is thinner than the lower nitride portion.

Abstract: A catalyst system and a method for manufacturing cyclic carbonate by the same are provided. The catalyst system includes a transition metal salt containing a halo group, an acetate group, or a combination thereof, and an organic phosphine ligand. The molar ratio of the organic phosphine ligand to the transition metal salt is greater than 0 and less than or equal to 50.

Abstract: A semiconductor process is described. A semiconductor substrate having a memory area, a first device area and a second device area is provided. A patterned charge-trapping layer is formed on the substrate, covering the memory area and the second device area but exposing the first device area. A first gate oxide layer is formed in the first device area. The charge-trapping layer in the second device area is removed. A second gate oxide layer is formed in the second device area.

Abstract: A multilevel device includes: at least one device region and at least one contact region having a stack of alternating plurality of continuous electrically conductive layers and plurality of electrically insulating layers located over a base. Each electrically conductive layer in the stack is electrically insulated from the other electrically conductive layers in the stack. The base may include a raised portion and a plurality of recesses in the raised portion, each recess in the plurality of recesses having a different lateral size from the other recesses in the plurality of recesses. The electrically conductive layers in the stack may be substantially conformal to the plurality of recesses in the base and expose one or more top surfaces of the raised portion of the base. A first electrically conductive layer in the stack may be a topmost layer in a laterally central portion of a first one of the plurality of recesses.