Patents by Inventor Zheng Bo

Zheng Bo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090146134
    Abstract: The present invention relates to a semi-conductive composition comprising carbon nanotubes in a matrix. These semiconductive compositions are useful in printing semiconducting portions of thin film transistors.
    Type: Application
    Filed: August 25, 2005
    Publication date: June 11, 2009
    Inventors: Xiang-Zheng Bo, Graciela B. Blanchet
  • Publication number: 20080173986
    Abstract: A method for making a semiconductor device is provided which comprises (a) providing a semiconductor structure equipped with a gate (209) and a channel region, said channel region being associated with the gate; (b) depositing a first sub-layer (231) of a first stressor material over the semiconductor structure, said first stressor material containing silicon-nitrogen bonds and imparting tensile stress to the semiconductor structure; (c) curing the first stressor material through exposure to a radiation source; (d) depositing a second sub-layer (233) of a second stressor material over the first sub-layer, said second stressor material containing silicon-nitrogen bonds and imparting tensile stress to the semiconductor structure; and (e) curing the second sub-layer of stressor material through exposure to a radiation source.
    Type: Application
    Filed: January 11, 2008
    Publication date: July 24, 2008
    Inventors: Kurt H. Junker, Paul A. Grudowski, Xiang-Zheng Bo, Tien Ying Luo
  • Publication number: 20080173908
    Abstract: A method for making a semiconductor device is provided which comprises (a) providing a semiconductor structure equipped with a gate and a channel region, said channel region being associated with the gate; (b) depositing a first sub-layer (131) of a first stressor material over the semiconductor structure, said first stressor material containing silicon-nitrogen bonds and imparting tensile stress to the semiconductor structure; (c) curing the first stressor material through exposure to a radiation source; (d) depositing a second sub-layer (133) of a second stressor material over the first sub-layer, said second stressor material containing silicon-nitrogen bonds and imparting tensile stress to the semiconductor structure; and (e) curing the second sub-layer of stressor material through exposure to a radiation source.
    Type: Application
    Filed: January 19, 2007
    Publication date: July 24, 2008
    Inventors: Kurt H. Junker, Paul A. Grudowski, Xiang-Zheng Bo, Tien Ying Luo
  • Patent number: 6858079
    Abstract: Self-assembled photonic crystals, including large sphere planar opals, infiltrated planar opals and inverted planar opals, as well as methods for manufacturing same are provided. Large sphere planar opals are manufactured according to a method comprising the steps of: synthesizing monodisperse silica spheres, wherein each of the silica spheres has a diameter greater than or equal to about 400 nanometers; purifying the silica spheres; and self-assembling the silica spheres into a plurality of ordered, planar layers on a substrate. Infiltrated planar opals may also be manufactured by further processing the large sphere planar opal by sintering the planar opal and infiltrating the planar opal with a predetermined material. Inverted planar opals may further be manufactured by removing the silica spheres from the infiltrated planar opal. Various modifications to the substrate and planar opal are also provided to enhance the properties of these photonic crystals.
    Type: Grant
    Filed: September 6, 2001
    Date of Patent: February 22, 2005
    Assignee: NEC Laboratories America, Inc.
    Inventors: David J. Norris, Yurii Vlasov, Xiang-Zheng Bo, James C. Sturm
  • Publication number: 20020062782
    Abstract: Self-assembled photonic crystals, including large sphere planar opals, infiltrated planar opals and inverted planar opals, as well as methods for manufacturing same are provided. Large sphere planar opals are manufactured according to a method comprising the steps of: synthesizing monodisperse silica spheres, wherein each of the silica spheres has a diameter greater than or equal to about 400 nanometers; purifying the silica spheres; and self-assembling the silica spheres into a plurality of ordered, planar layers on a substrate. Infiltrated planar opals may also be manufactured by further processing the large sphere planar opal by sintering the planar opal and infiltrating the planar opal with a predetermined material. Inverted planar opals may further be manufactured by removing the silica spheres from the infiltrated planar opal. Various modifications to the substrate and planar opal are also provided to enhance the properties of these photonic crystals.
    Type: Application
    Filed: September 6, 2001
    Publication date: May 30, 2002
    Inventors: David J. Norris, Yurii Vlasov, Xiang-Zheng Bo, James C. Sturm
  • Patent number: D450342
    Type: Grant
    Filed: August 2, 2000
    Date of Patent: November 13, 2001
    Assignee: Hopestar Electronics Limited
    Inventor: Zheng Bo