Abstract: A system to process multiplier X and multiplicand Y may include multiplication of a least-significant bit of X and a least-significant w bits of Y to generate a least-significant w bits of product Z. The system may further include determination of whether a least-significant bit of product Z is 1, addition of a least-significant w bits of modulus M to the least-significant w bits of product Z if the least-significant bit of product Z is 1, multiplication of the least-significant bit of X and bits 2w-1:w of Y to generate bits 2w-1:w of product Z, and addition of bits 2w-1:w of modulus M to bits 2w-1:w of product Z if the least-significant bit of product Z is 1.

Abstract: A system to process multiplier X and multiplicand Y may include multiplication of a least-significant bit of X and a least-significant w bits of Y to generate a least-significant w bits of product Z. The system may further include determination of whether a least-significant bit of product Z is 1, addition of a least-significant w bits of modulus M to the least-significant w bits of product Z if the least-significant bit of product Z is 1, multiplication of the least-significant bit of X and bits 2w-1:w of Y to generate bits 2w-1:w of product Z, and addition of bits 2w-1:w of modulus M to bits 2w-1:w of product Z if the least-significant bit of product Z is 1.

Abstract: A circuit to convert three input bits (A, B and C) to a redundant format may include a first block with at least one transmission gate, and a second block with at least one static mirror. The first block may receive the three bits and output a sum bit, and the second block may receive the three bits and output a carry bit.

Abstract: Intrinsic variations and challenging leakage control in current bulk-Si MOSFETs force undesired tradeoffs to be made and limit the scaling of SRAM circuits. Circuits and mechanisms are taught herein which improve leakage and noise margin in SRAM cells, such as those comprising either six-transistor (6-T) SRAM cell designs, or four-transistor (4-T) SRAM cell designs. The inventive SRAM cells utilize a feedback means coupling a portion of the storage node to a back-gate of an access transistor. Preferably feedback is coupled in this manner to both access transistors. SRAM cells designed with this built-in feedback achieve significant improvements in cell static noise margin (SNM) without area penalty. Use of the feedback scheme also results in the creation of a practical 4-T FinFET-based SRAM cell that achieves sub-100 pA per-cell standby current and offers similar improvements in SNM as the 6-T cell with feedback.