Patents by Inventor Zheng John Ye

Zheng John Ye has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11956883
    Abstract: A method and apparatus for controlling RF plasma attributes is disclosed. Some embodiments of the disclosure provide RF sensors within processing chambers operable at high temperatures. Some embodiments provide methods of measuring RF plasma attributes using RF sensors within a processing chamber to provide feedback control for an RF generator.
    Type: Grant
    Filed: December 23, 2022
    Date of Patent: April 9, 2024
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Zheng John Ye, Daemian Raj Benjamin Raj, Shailendra Srivastava, Nikhil Sudhindrarao Jorapur, Ndanka O. Mukuti, Dmitry A. Dzilno, Juan Carlos Rocha
  • Patent number: 11935724
    Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.
    Type: Grant
    Filed: February 13, 2023
    Date of Patent: March 19, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Kartik Ramaswamy, Igor Markovsky, Zhigang Chen, James D. Carducci, Kenneth S. Collins, Shahid Rauf, Nipun Misra, Leonid Dorf, Zheng John Ye
  • Publication number: 20240087847
    Abstract: The present disclosure is directed to an antenna array. The antenna array includes a plurality of dielectric windows coupled to a support structure comprising a plurality of gas ports, a primary frame comprising a primary conduit connected to a power source and a plurality of secondary frames supported by the primary frame. The secondary frame includes a secondary conduit connected to the primary conduit. A plurality of inductive couplers are disposed over the plurality of dielectric windows and supported by the secondary frames. The plurality of inductive couplers include a plurality of antenna connectors and a plurality of plurality of antennas. The plurality of antenna connectors connect the plurality of antennas to the secondary conduit.
    Type: Application
    Filed: September 9, 2022
    Publication date: March 14, 2024
    Inventors: Zheng John YE, Jeevan Prakash SEQUEIRA, Chien-Teh KAO, Tae Kyung WON, Young Dong LEE, Soo Young CHOI, Suhail ANWAR, Jianhua ZHOU
  • Patent number: 11776835
    Abstract: Exemplary semiconductor processing systems may include a processing chamber and an electrostatic chuck disposed at least partially within the processing chamber. The electrostatic chuck may include at least one electrode and a heater. A semiconductor processing system may include a power supply to provide a signal to the electrode to provide electrostatic force to secure a substrate to the electrostatic chuck. The system may also include a filter communicatively coupled between the power supply and the electrode. The filter is configured to remove or reduce noise introduced into the chucking signal by operating the heater while the electrostatic force on the substrate is maintained. The filter may include active circuitry, passive circuitry, or both, and may include an adjustment circuit to set the gain of the filter so that an output signal level from the filter corresponds to an input signal level for the filter.
    Type: Grant
    Filed: September 29, 2020
    Date of Patent: October 3, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Zheng John Ye, Daemian Raj Benjamin Raj, Rana Howlader, Abhigyan Keshri, Sanjay G. Kamath, Dmitry A. Dzilno, Juan Carlos Rocha-Alvarez, Shailendra Srivastava, Kristopher R. Enslow, Xinhai Han, Deenesh Padhi, Edward P. Hammond
  • Publication number: 20230197406
    Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.
    Type: Application
    Filed: February 13, 2023
    Publication date: June 22, 2023
    Inventors: Kartik Ramaswamy, Igor Markovsky, Zhigang Chen, James D. Carducci, Kenneth S. Collins, Shahid Rauf, Nipun Misra, Leonid Dorf, Zheng John Ye
  • Publication number: 20230170190
    Abstract: Embodiments of the present disclosure generally relate to substrate supports for process chambers and RF grounding configurations for use therewith. Methods of grounding RF current are also described. A chamber body at least partially defines a process volume therein. A first electrode is disposed in the process volume. A pedestal is disposed opposite the first electrode. A second electrode is disposed in the pedestal. An RF filter is coupled to the second electrode through a conductive rod. The RF filter includes a first capacitor coupled to the conductive rod and to ground. The RF filter also includes a first inductor coupled to a feedthrough box. The feedthrough box includes a second capacitor and a second inductor coupled in series. A direct current (DC) power supply for the second electrode is coupled between the second capacitor and the second inductor.
    Type: Application
    Filed: January 26, 2023
    Publication date: June 1, 2023
    Inventors: Satya THOKACHICHU, Edward P. HAMMOND, IV, Viren KALSEKAR, Zheng John YE, Abdul Aziz KHAJA, Vinay K. PRABHAKAR
  • Publication number: 20230131809
    Abstract: A method and apparatus for controlling RF plasma attributes is disclosed. Some embodiments of the disclosure provide RF sensors within processing chambers operable at high temperatures. Some embodiments provide methods of measuring RF plasma attributes using RF sensors within a processing chamber to provide feedback control for an RF generator.
    Type: Application
    Filed: December 23, 2022
    Publication date: April 27, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Zheng John Ye, Daemian Raj Benjamin Raj, Shailendra Srivastava, Nikhil Sudhindrarao Jorapur, Ndanka O. Mukuti, Dmitry A. Dzilno, Juan Carlos Rocha
  • Patent number: 11587766
    Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.
    Type: Grant
    Filed: June 21, 2021
    Date of Patent: February 21, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Kartik Ramaswamy, Igor Markovsky, Zhigang Chen, James D. Carducci, Kenneth S. Collins, Shahid Rauf, Nipun Misra, Leonid Dorf, Zheng John Ye
  • Patent number: 11570879
    Abstract: A method and apparatus for controlling RF plasma attributes is disclosed. Some embodiments of the disclosure provide RF sensors within processing chambers operable at high temperatures. Some embodiments provide methods of measuring RF plasma attributes using RF sensors within a processing chamber to provide feedback control for an RF generator.
    Type: Grant
    Filed: August 19, 2020
    Date of Patent: January 31, 2023
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Zheng John Ye, Daemian Raj Benjamin Raj, Shailendra Srivastava, Nikhil Sudhindrarao Jorapur, Ndanka O. Mukuti, Dmitry A. Dzilno, Juan Carlos Rocha
  • Patent number: 11569072
    Abstract: Embodiments of the present disclosure generally relate to substrate supports for process chambers and RF grounding configurations for use therewith. Methods of grounding RF current are also described. A chamber body at least partially defines a process volume therein. A first electrode is disposed in the process volume. A pedestal is disposed opposite the first electrode. A second electrode is disposed in the pedestal. An RF filter is coupled to the second electrode through a conductive rod. The RF filter includes a first capacitor coupled to the conductive rod and to ground. The RF filter also includes a first inductor coupled to a feedthrough box. The feedthrough box includes a second capacitor and a second inductor coupled in series. A direct current (DC) power supply for the second electrode is coupled between the second capacitor and the second inductor.
    Type: Grant
    Filed: April 23, 2019
    Date of Patent: January 31, 2023
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Satya Thokachichu, Edward P. Hammond, IV, Viren Kalsekar, Zheng John Ye, Abdul Aziz Khaja, Vinay K. Prabhakar
  • Patent number: 11501993
    Abstract: Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded within the electrostatic chuck body. The assemblies may also include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The substrate support assemblies may be characterized by a leakage current through the electrostatic chuck body of less than or about 4 mA at a temperature of greater than or about 500° C. and a voltage of greater than or about 600 V.
    Type: Grant
    Filed: July 22, 2020
    Date of Patent: November 15, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Jian Li, Juan Carlos Rocha-Alvarez, Zheng John Ye, Daemian Raj Benjamin Raj, Shailendra Srivastava, Xinhai Han, Deenesh Padhi, Kesong Hu, Chuan Ying Wang
  • Publication number: 20220119952
    Abstract: Exemplary deposition methods may include electrostatically chucking a semiconductor substrate at a first voltage within a processing region of a semiconductor processing chamber. The methods may include performing a deposition process. The deposition process may include forming a plasma within the processing region of the semiconductor processing chamber. The methods may include halting formation of the plasma within the semiconductor processing chamber. The methods may include, simultaneously with the halting, increasing the first voltage of electrostatic chucking to a second voltage. The methods may include purging the processing region of the semiconductor processing chamber.
    Type: Application
    Filed: October 20, 2020
    Publication date: April 21, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Rana Howlader, Hang Yu, Madhu Santosh Kumar Mutyala, Zheng John Ye, Abhigyan Keshri, Sanjay Kamath, Daemian Raj Benjamin Raj, Deenesh Padhi
  • Publication number: 20220102179
    Abstract: Exemplary semiconductor processing systems may include a processing chamber and an electrostatic chuck disposed at least partially within the processing chamber. The electrostatic chuck may include at least one electrode and a heater. A semiconductor processing system may include a power supply to provide a signal to the electrode to provide electrostatic force to secure a substrate to the electrostatic chuck. The system may also include a filter communicatively coupled between the power supply and the electrode. The filter is configured to remove or reduce noise introduced into the chucking signal by operating the heater while the electrostatic force on the substrate is maintained. The filter may include active circuitry, passive circuitry, or both, and may include an adjustment circuit to set the gain of the filter so that an output signal level from the filter corresponds to an input signal level for the filter.
    Type: Application
    Filed: September 29, 2020
    Publication date: March 31, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Zheng John Ye, Daemian Raj Benjamin Raj, Rana Howlader, Abhigyan Keshri, Sanjay G. Kamath, Dmitry A. Dzilno, Juan Carlos Rocha-Alvarez, Shailendra Srivastava, Kristopher R. Enslow, Xinhai Han, Deenesh Padhi, Edward P. Hammond
  • Patent number: 11276562
    Abstract: A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.
    Type: Grant
    Filed: March 2, 2020
    Date of Patent: March 15, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Zheng John Ye, Ganesh Balasubramanian, Thuy Britcher, Jay D. Pinson, II, Hiroji Hanawa, Juan Carlos Rocha-Alvarez, Kwangduk Douglas Lee, Martin Jay Seamons, Bok Hoen Kim, Sungwon Ha
  • Publication number: 20210375586
    Abstract: Embodiments of the present disclosure generally relate to semiconductor processing apparatus. More specifically, embodiments of the disclosure relate to an ICP process chamber. The ICP process chamber includes a chamber body and a lid disposed over the chamber body. The lid is fabricated from a ceramic material. The lid has a monolithic body, and one or more heating elements and one or more coils are embedded in the monolithic body of the lid. The number of components disposed over the lid is reduced with the one or more heating elements and one or more coils embedded in the lid. Furthermore, with the embedded one or more heating elements, the controlling of the thermal characteristics of the lid is improved.
    Type: Application
    Filed: April 9, 2019
    Publication date: December 2, 2021
    Inventors: Abhijit KANGUDE, Jay D. PINSON, II, Zheng John YE
  • Patent number: 11189517
    Abstract: Embodiments described herein relate to apparatus and methods for substantially reducing an occurrence of radio frequency (RF) coupling through a chucking electrode. The chucking electrode is disposed in an electrostatic chuck positioned on a substrate support. The substrate support is coupled to a process chamber body. An RF source is used to generate a plasma in a process volume adjacent to the substrate support. An impedance matching circuit is disposed between the RF source and the chucking electrode is disposed in the electrostatic chuck. An electrostatic chuck filter is coupled between the chucking electrode and the chucking power source.
    Type: Grant
    Filed: February 14, 2020
    Date of Patent: November 30, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Zheng John Ye, Edward Haywood, Adam Fischbach, Timothy Joseph Franklin
  • Publication number: 20210313147
    Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.
    Type: Application
    Filed: June 21, 2021
    Publication date: October 7, 2021
    Inventors: Kartik Ramaswamy, Igor Markovsky, Zhigang Chen, James D. Carducci, Kenneth S. Collins, Shahid Rauf, Nipun Misra, Leonid Dorf, Zheng John Ye
  • Patent number: 11130142
    Abstract: Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a substrate processing chamber includes a body having a first side and an opposing second side; a gas distribution plate disposed proximate the second side of the body; and a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the body, wherein the body is electrically coupled to the gas distribution plate through the clamp.
    Type: Grant
    Filed: April 10, 2020
    Date of Patent: September 28, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Dmitry Lubomirsky, Vladimir Knyazik, Hamid Noorbakhsh, Jason Della Rosa, Zheng John Ye, Jennifer Y. Sun, Sumanth Banda
  • Publication number: 20210296144
    Abstract: A method and apparatus for a heated substrate support pedestal is provided. In one embodiment, a substrate support pedestal includes a ceramic body having a top surface and a bottom surface. The substrate support pedestal has a stem coupled to the bottom surface of the ceramic body. A top electrode is disposed within the ceramic body. A conductive rod is disposed through the stem and coupled to the top electrode. A plurality of heater elements is disposed within the ceramic body below the top electrode. A ground mesh is disposed within the ceramic body, below the plurality of heater elements, and above the bottom surface of the ceramic body.
    Type: Application
    Filed: May 27, 2021
    Publication date: September 23, 2021
    Inventors: Xing LIN, Vijay D. PARKHE, Jianhua ZHOU, Edward P. HAMMOND, IV, Jaeyong CHO, Zheng John YE, Zonghui SU, Juan Carlos ROCHA-ALVAREZ
  • Patent number: 11043361
    Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.
    Type: Grant
    Filed: October 25, 2017
    Date of Patent: June 22, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Kartik Ramaswamy, Igor Markovsky, Zhigang Chen, James D. Carducci, Kenneth S. Collins, Shahid Rauf, Nipun Misra, Leonid Dorf, Zheng John Ye