Abstract: Methods and compositions containing a phorbol ester or a derivative of a phorbol ester in combination with G-CSF or in combination with EPO, are provided for the treatment of cytopenia in mammalian subjects. The compositions and methods also reduce the duration of cytopenia such as neutropenia, thrombocytopenia, and/or anemia.

Abstract: A method for partially filling a space between two superimposed structures in a semiconductor device under construction is provided. The method includes the steps of: (a) providing the two superimposed structures having said space therebetween; (b) entirely filling said space with a thermoplastic material; (c) removing a first portion of the thermoplastic material present in the space, the first portion comprising at least part of a top surface of the thermoplastic material, thereby leaving in said space a remaining thermoplastic material having a height; and (d) heating up the remaining photosensitive thermoplastic material so as to reduce its height. A replacement metal gate process for forming a different gate stack on two superimposed transistor channels in a semiconductor device under construction as well as a semiconductor device under construction is also provided.

Abstract: The disclosed technology relates to a method of forming a stacked semiconductor device. One aspect includes fin structures formed by upper and lower channel layers which are separated by an intermediate layer. After preliminary fun cuts are formed in the fin structure, a sacrificial spacer is formed that covers end surfaces of an upper channel layer portion. Final fin cuts are formed in the fin structure where the lower channel layer is etched which defines a lower channel layer portion. Lower source/drain regions are formed on end surfaces of the lower channel layer portion. The sacrificial spacer shields the end surfaces of the upper channel layer portion allowing for selective deposition of material for the lower source/drain regions.

Abstract: An underwater propulsion apparatus includes a motor and a control system for controlling the motor. The control system includes a remote controller and a motor driving device, wirelessly communicating with the remote controller. The motor driving device includes a communication repeater module and a motor driving module. The communication repeater module is configured for detecting interruptions or non-receipt of a wireless signal transmitted by the remote controller. Wireless signals to the motor driving module are transmitted by the remote controller to the communication repeater module. The motor driving module is configured for receiving the wireless signal, and outputs a driving signal for driving the motor according to the wireless signal, the motor driving module shutting down when no signal is received.

Abstract: In a first aspect, the present disclosure relates to a method for forming a contact isolation for a semiconductor device, comprising: providing a semiconductor structure comprising a trench exposing a contact thereunder, filling a bottom of the trench with a sacrificial material, infiltrating the sacrificial material with a ceramic material, and removing the sacrificial material.

Abstract: A method for forming a buried metal line in a semiconductor substrate comprises forming, at a position between a pair of semiconductor structures, a metal line trench in the semiconductor substrate at a level below a base of each semiconductor structure of the pair, and forming the metal line in the metal line trench by means of area selective deposition of a metal line material, followed by embedding the pair of semiconductor structures in an insulating layer.

Abstract: Methods and compositions containing a phorbol ester or a derivative of a phorbol ester are provided for the treatment of chronic and acute conditions. Such conditions may be caused by disease, be symptoms, treatments, or sequelae of disease. The phorbol esters described are particularly useful in the treatment of neoplastic diseases and/or managing the side effects of chemotherapeutic and radiotherapeutic treatments of neoplastic diseases.

Abstract: Methods and compositions containing a phorbol ester or a derivative of a phorbol ester are provided for the treatment of chronic and acute conditions. Such conditions may be caused by disease, be symptoms, treatments, or sequelae of disease. The phorbol esters described are particularly useful in the treatment of neoplastic diseases and/or managing the side effects of chemotherapeutic and radiotherapeutic treatments of neoplastic diseases.

Abstract: Methods and compositions containing a phorbol ester or a derivative of a phorbol ester are provided for the treatment and prevention of stroke and the sequelae of stroke. Additional compositions and methods are provided which employ a phorbol ester or derivative compound in combination with at least one additional agent to yield more effective treatment tools to treat or prevent stroke and the long term effects of stroke in mammalian subjects.

Abstract: Methods and compositions containing a phorbol ester or a derivative of a phorbol ester are provided for the treatment of chronic and acute conditions. Such conditions may be caused by disease, be symptoms or sequelae of disease. Chronic and acute conditions may be due to viral infections such as HIV and AIDS, neoplastic diseases stroke, kidney disease, urinary incontinence, autoimmune disorders, Parkinson's disease, prostate hypertrophy, aging, or the treatment of such diseases. Additional compositions and methods are provided which employ a phorbol ester or derivative compound in combination with at least one additional agent to yield more effective treatment tools against acute and chronic conditions in mammalian subjects.

Abstract: In an SRAM cell circuit, an N+ layer 12a and a P+ layer 13a, which are present between first gate connection W layers 22a and 22b connecting to gate TiN layers 23a and 23b in plan view, which connect to the bottom portions of Si pillars 11a and 11b, and which extend in the horizontal direction, connect through a second gate connection W layer 29a to a first gate connection W layer 22c, which connects to the gate TiN layers 23a and 23b and extend in the horizontal direction. The second gate connection W layer 29a has a bottom portion within the first gate connection W layer 22c, and has an upper surface positioned lower than the upper surfaces of the gate TiN layers 23a to 23f and the first gate connection W layers 22a to 22d.

Abstract: A method for producing a pillar structure in a semiconductor layer, the method including providing a structure including, on a main surface, a semiconductor layer. A patterned hard mask layer stack is provided on the semiconductor layer that includes a first layer in contact with the semiconductor layer and a second layer overlying and in contact with the first layer. The semiconductor layer is etched using the patterned hard mask layer stack as a mask. The etching includes subjecting the structure to a first plasma thereby removing a first part of the semiconductor layer and at least a part of the second layer while preserving the first layer thereby, producing a first part of the pillar structure, thereafter; and subjecting the structure to a second plasma thereby removing a second part of the semiconductor layer thereby, producing a second part of the pillar structure.

Abstract: Methods and compositions containing a phorbol ester or a derivative of a phorbol ester are provided for the treatment of chronic and acute conditions. Such conditions may be caused by disease, be symptoms, treatments, or sequelae of disease. The phorbol esters described are particularly useful in the treatment of neoplastic diseases and/or managing the side effects of chemotherapeutic and radiotherapeutic treatments of neoplastic diseases.

Abstract: A method for forming a mask layer above a semiconductor fin structure is disclosed. In one aspect the method includes forming a first set of spacers and a second set of spacers arranged at the side surfaces of the first set of spacers, providing a first filler material between the second set of spacers, etching a top portion of the first filler material to form recesses between the second set of spacers, and providing a second filler material in the recesses, the second filler material forming a set of sacrificial mask lines. Further, the method includes recessing a top portion of at least the first set of spacers, providing a mask layer material between the sacrificial mask lines, and removing the sacrificial mask lines and the first filler material.

Abstract: A method for forming horizontal nanowires, the method comprising providing a substrate comprising a dielectric layer and a fin structure comprising a portion protruding from the dielectric layer, the protruding portion being partially un-masked and comprising a multi-layer stack consisting of a layer of a first material stacked alternately and repeatedly with a layer of a second material and forming horizontal nanowires done by performing a cycle comprising removing selectively the first material up to the moment that a horizontal nanowire of the second material becomes suspended over a remaining portion of the partially un-masked protruding portion, forming a sacrificial layer on the remaining portion, while leaving the suspended horizontal nanowire uncovered, providing, selectively, a cladding layer on the suspended horizontal nanowire, and thereafter removing the sacrificial layer.

Abstract: Methods and compositions containing a phorbol ester or a derivative of a phorbol ester are provided for the treatment of chronic and acute conditions. Such conditions may be caused by disease, be symptoms or sequalae of disease. Chronic and acute conditions may be due to viral infections such as HIV and AIDS, neoplastic diseases stroke, kidney disease, urinary incontinence, autoimmune disorders, Parkinson's disease, prostate hypertrophy, aging, or the treatment of such diseases. Additional compositions and methods are provided which employ a phorbol ester or derivative compound in combination with at least one additional agent to yield more effective treatment tools against acute and chronic conditions in mammalian subjects.

Abstract: A sand control screen for heavy oil thermal recovery, including: a core base pipe having a plurality of base-pipe holes distributed on a pipe body thereof; a filtering sleeve sleeved on the core base pipe and arranged with respect to the base pipe holes; and a non-welded support disk mounted on the core base pipe and fastening the filter sleeve to the core base pipe by means of a wedge insertion locking and sealing structure. The invention solves the problems in the prior art in which sand control screen has a poor reliability in a high-temperature condition of a thermal production well, resulting in potential safety risks of down hole sand control operation of the screens. In addition, the sand control screen of the present invention has a long service life, thus improving cost effectiveness of oil wells.

Abstract: A closed-loop cooling ship propulsion apparatus includes a power device, a pump, and a coolant supply. A fluid circuit is formed in the ship propulsion apparatus and a coolant in the loop can be arranged to circulate through all heat-generating components in addition to the pump and motive power unit. A closed-loop circuit avoids the blockages and contamination which might occur if the water of a sea or lake was used directly.

Abstract: The disclosed technology relates to a method of forming a stacked semiconductor device. One aspect includes fin structures formed by upper and lower channel layers which are separated by an intermediate layer. After preliminary fun cuts are formed in the fin structure, a sacrificial spacer is formed that covers end surfaces of an upper channel layer portion. Final fin cuts are formed in the fin structure where the lower channel layer is etched which defines a lower channel layer portion. Lower source/drain regions are formed on end surfaces of the lower channel layer portion. The sacrificial spacer shields the end surfaces of the upper channel layer portion allowing for selective deposition of material for the lower source/drain regions.

Abstract: Disclosed are a composite water-controlling and flow-limiting device and a screen pipe thereof. The composite water-controlling and flow-limiting device comprises a composite water-controlling screen pipe. The composite water-controlling screen pipe comprises: a base pipe (1); a self-adaptive internal flow control device (3) mounted on the base pipe and used for a circulation channel for fluids inside and outside the base pipe and controlling an opening degree of the circulation channel according to the change in viscosity of different fluids so as to automatically limit flow; a flow control device (4) mounted on the base pipe and adjacent to the self-adaptive internal flow control device for controlling an overflow of the base pipe; and a screen pipe coaxially and threadedly connected to the base pipe, wherein an inner diameter of the screen pipe is the same as that of the base pipe.