Abstract: A method for producing a structure including, on a main surface of a substrate, at least one elongated cavity having openings at opposing ends. The method includes providing a substrate having a main surface. On the main surface, a first pair of features are formed that protrude perpendicularly from the main surface. The features have elongated sidewalls and a top surface, are parallel to one another, are separated by a gap having a width s1 and a bottom area, and have a width w1 and a height h1. At least the main surface of the substrate and the first pair of features are brought in contact with a liquid, suitable for making a contact angle of less than 90° with the material of the elongated sidewalls and subsequently the substrate is dried.

Abstract: An underwater propulsion apparatus includes a motor and a control system for controlling the motor. The control system includes a remote controller and a motor driving device, wirelessly communicating with the remote controller. The motor driving device includes a communication repeater module and a motor driving module. The communication repeater module is configured for detecting interruptions or non-receipt of a wireless signal transmitted by the remote controller. Wireless signals to the motor driving module are transmitted by the remote controller to the communication repeater module. The motor driving module is configured for receiving the wireless signal, and outputs a driving signal for driving the motor according to the wireless signal, the motor driving module shutting down when no signal is received.

Abstract: The disclosed technology generally relates to a method of forming a nanoscale opening in a semiconductor structure, and more particularly to forming a nanoscale opening that can be used for sensing the presence of polymers, e.g., the individual bases of deoxyribonucleic acid (DNA) or ribonucleic acid (RNA). In one aspect, a method of forming a nanopore in a semiconductor fin includes providing a fin structure comprising a bottom layer and a top layer, pattering the top layer to form a pillar, and laterally embedding the pillar in a filler material. The method additionally includes forming an aperture in the filler material by removing the pillar, and forming the nanopore in the bottom layer by etching through the aperture. In another aspect, a semiconductor fin is fabricated using the method.

Abstract: A closed-loop cooling ship propulsion apparatus includes a power device, a pump, and a coolant supply. A fluid circuit is formed in the ship propulsion apparatus and a coolant in the loop can be arranged to circulate through all heat-generating components in addition to the pump and motive power unit. A closed-loop circuit avoids the blockages and contamination which might occur if the water of a sea or lake was used directly.

Abstract: Methods and compositions containing a phorbol ester or a derivative of a phorbol ester are provided for the treatment and prevention of stroke and the sequelae of stroke. Additional compositions and methods are provided which employ a phorbol ester or derivative compound in combination with at least one additional agent to yield more effective treatment tools to treat or prevent stroke and the long term effects of stroke in mammalian subjects.

Abstract: Methods and compositions containing a phorbol ester or a derivative of a phorbol ester are provided for the treatment of chronic and acute conditions. Such conditions may be caused by disease, be symptoms, treatments, or sequelae of disease. The phorbol esters described are particularly useful in the treatment of neoplastic diseases and/or managing the side effects of chemotherapeutic and radiotherapeutic treatments of neoplastic diseases.

Abstract: The disclosed technology generally relates to semiconductor devices and more particularly to a vertical channel device and a method of fabricating the same. According to one aspect, a method for fabricating a vertical channel device includes forming a vertical semiconductor structure including an upper portion, an intermediate portion and a lower portion, by etching a semiconductor layer stack arranged on a substrate. The semiconductor layer stack includes an upper semiconductor layer, an intermediate semiconductor layer and a lower semiconductor layer, wherein the intermediate semiconductor layer is formed of a material different from a material of the lower semiconductor layer and different from a material of the upper semiconductor layer.

Abstract: A sand control screen for heavy oil thermal recovery, including: a core base pipe having a plurality of base-pipe holes distributed on a pipe body thereof; a filtering sleeve sleeved on the core base pipe and arranged with respect to the base pipe holes; and a non-welded support disk mounted on the core base pipe and fastening the filter sleeve to the core base pipe by means of a wedge insertion locking and sealing structure. The invention solves the problems in the prior art in which sand control screen has a poor reliability in a high-temperature condition of a thermal production well, resulting in potential safety risks of down hole sand control operation of the screens. In addition, the sand control screen of the present invention has a long service life, thus improving cost effectiveness of oil wells.

Abstract: Methods and compositions containing a phorbol ester or a derivative of a phorbol ester are provided for the treatment of chronic and acute conditions. Such conditions may be caused by disease, be symptoms or sequelae of disease. Chronic and acute conditions may be due to viral infections such as HIV and AIDS, neoplastic diseases stroke, kidney disease, urinary incontinence, autoimmune disorders, Parkinson's disease, prostate hypertrophy, aging, or the treatment of such diseases. Additional compositions and methods are provided which employ a phorbol ester or derivative compound in combination with at least one additional agent to yield more effective treatment tools against acute and chronic conditions in mammalian subjects.

Abstract: In an SRAM cell circuit, an N+ layer 12a and a P+ layer 13a, which are present between first gate connection W layers 22a and 22b connecting to gate TiN layers 23a and 23b in plan view, which connect to the bottom portions of Si pillars 11a and 11b, and which extend in the horizontal direction, connect through a second gate connection W layer 29a to a first gate connection W layer 22c, which connects to the gate TiN layers 23a and 23b and extend in the horizontal direction. The second gate connection W layer 29a has a bottom portion within the first gate connection W layer 22c, and has an upper surface positioned lower than the upper surfaces of the gate TiN layers 23a to 23f and the first gate connection W layers 22a to 22d.

Abstract: Methods and compositions containing a phorbol ester or a derivative of a phorbol ester are provided for the treatment of chronic and acute conditions. Such conditions may be caused by disease, be symptoms, treatments, or sequelae of disease. The phorbol esters described are particularly useful in the treatment of neoplastic diseases and/or managing the side effects of chemotherapeutic and radiotherapeutic treatments of neoplastic diseases.

Abstract: Methods and compositions containing a phorbol ester or a derivative of a phorbol ester are provided for the treatment of chronic and acute conditions. Such conditions may be caused by disease, be symptoms or sequelae of disease. Chronic and acute conditions may be due to viral infections such as HIV and AIDS, neoplastic diseases stroke, kidney disease, urinary incontinence, autoimmune disorders, Parkinson's disease, prostate hypertrophy, aging, or the treatment of such diseases. Additional compositions and methods are provided which employ a phorbol ester or derivative compound in combination with at least one additional agent to yield more effective treatment tools against acute and chronic conditions in mammalian subjects.

Abstract: Methods and compositions containing a phorbol ester or a derivative of a phorbol ester are provided for the treatment of chronic and acute conditions. Such conditions may be caused by disease, be symptoms, treatments, or sequelae of disease. The phorbol esters described are particularly useful in the treatment of neoplastic diseases and/or managing the side effects of chemotherapeutic and radiotherapeutic treatments of neoplastic diseases.

Abstract: A method of forming a semiconductor device comprising horizontal nanowires is described. An example method involves providing a semiconductor structure comprising at least one fin, where the fin includes an alternating stack of layers of sacrificial material and nanowire material, and where the semiconductor structure includes a dummy gate partly covering the stack of layers. The method further involves at least partly removing the sacrificial material, in between the layers of nanowire material, next to the dummy gate thereby forming a void. Still further, the method involves providing spacer material within the void thereby forming an internal spacer. Yet still further the method involves removing the dummy gate, and selectively removing the sacrificial material in that part of the fin which was covered by the dummy gate, thereby releasing the nanowires. The internal spacer is provided before removing the dummy gate and the sacrificial material to release the nanowires.

Abstract: Methods and compositions containing a phorbol ester or a derivative of a phorbol ester are provided for the treatment and prevention of stroke and the sequelae of stroke. Additional compositions and methods are provided which employ a phorbol ester or derivative compound in combination with at least one additional agent to yield more effective treatment tools to treat or prevent stroke and the long term effects of stroke in mammalian subjects.

Abstract: A method for forming a semiconductor device is disclosed. The method includes providing a semiconductor substrate. The method also includes epitaxially growing on the semiconductor substrate a first part of a III-V semiconductor nanostructure. The method further includes covering the first part of the III-V semiconductor nanostructure with a layer of a first material. Additionally, the method includes removing a top portion of the layer of the first material. Still further, the method includes epitaxially growing on the first part of the III-V semiconductor nanostructure a second part of the III-V semiconductor nanostructure. The method additionally includes covering the second part of the III-V semiconductor nanostructure with a layer of a second material. The second material is different from the first material. Even further, the method includes removing a top portion of the layer of the second material.

Abstract: Methods and compositions containing a phorbol ester or a derivative of a phorbol ester are provided for the treatment of chronic and acute conditions. Such conditions may be caused by disease, be symptoms, treatments, or sequelae of disease. The phorbol esters described are particularly useful in the treatment of neoplastic diseases and/or managing the side effects of chemotherapeutic and radiotherapeutic treatments of neoplastic diseases.

Abstract: A method for fabricating a semiconductor structure is provided. The method includes providing a patterned substrate comprising a semiconductor region and a dielectric region. A conformal layer of a first dielectric material is deposited directly on the patterned substrate. A layer of a sacrificial material is deposited overlying the conformal layer of the first dielectric material. The sacrificial material is patterned, whereby a part of the semiconductor region remains covered by the patterned sacrificial material. A layer of a second dielectric material is deposited on the patterned substrate, thereby completely covering the patterned sacrificial material. A recess is formed in the second dielectric material by completely removing the patterned sacrificial material. The exposed conformal layer of the first dielectric material is removed selectively to the semiconductor region.

Abstract: Methods and compositions containing a phorbol ester or a derivative of a phorbol ester are provided for the treatment and prevention of stroke and the sequelae of stroke. Additional compositions and methods are provided which employ a phorbol ester or derivative compound in combination with at least one additional agent to yield more effective treatment tools to treat or prevent stroke and the long term effects of stroke in mammalian subjects.

Abstract: Methods and compositions containing a phorbol ester or a derivative of a phorbol ester are provided for the treatment of chronic and acute conditions. Such conditions may be caused by disease, be symptoms or sequelae of disease. Chronic and acute conditions may be due to viral infections such as HIV and AIDS, neoplastic diseases stroke, kidney disease, urinary incontinence, autoimmune disorders, Parkinson's disease, prostate hypertrophy, aging, or the treatment of such diseases. Additional compositions and methods are provided which employ a phorbol ester or derivative compound in combination with at least one additional agent to yield more effective treatment tools against acute and chronic conditions in mammalian subjects.