Abstract: A metrology system comprising a target object, a metrology instrument and a control unit configured for controlling an alignment of the targeting unit and for deriving an orientation of the target object. The metrology instrument comprises a zoom objective, an illumination unit and a time-of-flight sensor comprising an array of pixels and capable of providing range data for each pixel of the array as point cloud data, the time-of-flight sensor provides the distance measuring device. The control unit comprises an object determination functionality which provides receiving the point cloud data provided by the time-of-flight sensor, deriving a digital representation of the target object by processing the point cloud data, comparing the digital representation of the target object with a reference pattern of the target object, and determining the orientation of the target object based on the comparison of the digital representation of the target object with the reference pattern.

Abstract: In an embodiment, a device includes: an isolation region on a substrate; a first semiconductor fin protruding above the isolation region; a second semiconductor fin protruding above the isolation region; and a dielectric fin between the first semiconductor fin and the second semiconductor fin, the dielectric fin protruding above the isolation region, the dielectric fin including: a first layer including a first dielectric material having a first carbon concentration; and a second layer on the first layer, the second layer including a second dielectric material having a second carbon concentration, the second carbon concentration greater than the first carbon concentration.

Abstract: Systems and methods for detecting an analyte include test wands configured to employ immunochromatographic assay with new fluorescent labeling technology, a reading device that can specifically identify signals from wands and sync information to the mobile devices. The systems may quantitatively detect progesterone metabolites and hormones in urine to track the level changes, confirm ovulation, and/or evaluate menstruation status. The systems and methods assess and track an individual's ovulation cycle by monitoring a hormone pattern of that specific individual and establishing a dynamic threshold as a baseline for changes in the specific subject's hormones. The systems and methods further include enhancing the accuracy and reliability of lateral flow immunoassays through generation of signal curves plotting signal intensity versus time and comparative analysis of signal intensity over time to assess flowability within an assay and improve overall assay performance.

Abstract: Embodiments of the present disclosure provide semiconductor device structures and methods of forming the same. The method includes forming a first fin structure and a second fin structure from a substrate, depositing a first conformal layer over the first and second fin structures and between the first and second fin structures, depositing a second conformal layer on the first conformal layer, depositing a third conformal layer on the second conformal layer, depositing a fourth conformal layer on the third conformal layer, depositing a first insulating material on the fourth conformal layer between the first and second fin structures, and depositing a second insulating material on the first insulating material. The first and second fin structures are embedded by the second insulating material. The method further includes removing portions of the second insulating material and the first, second, third, and fourth conformal layers to expose the first and second fin structures.

Abstract: The present invention discloses a pin-on-disk type in-situ current-carrying friction testing system, and belongs to the technical field of friction performance testing. The friction testing system includes a pin-on-disk type friction pair, a current loading mechanism, and a magnetic field generating mechanism. The current loading mechanism includes a conductive terminal abutting against an annular sidewall of a disk specimen and used to guide a current in the disk specimen to flow along a horizontal direction, and the magnetic field generating mechanism is used to generate a magnetic field. When a pin specimen and a disk specimen rotate relatively, the pin specimen, the conductive terminal, and the magnetic field generating mechanism are relatively stationary, and an Ampere force generated by the current in the disk specimen flowing in the horizontal direction under the action of the magnetic field faces a support platform.

Abstract: Various embodiments of the present disclosure provide a semiconductor device structure. In one embodiment, the semiconductor device structure includes a plurality of semiconductor layers vertically stacked, a plurality of inner spacers, each being disposed between two adjacent semiconductor layers. The structure also includes a source/drain feature in contact with each of the inner spacers, a gate electrode layer surrounding a portion of each of the plurality of the semiconductor layers, and a cap layer disposed between the source/drain feature and each of the plurality of the semiconductor layers.

Abstract: Embodiments of the present disclosure provide a method for selectively forming a seed layer over semiconductor fins. Some embodiments provide forming the selective seed layer using a mono-silane at an increased temperature. Some embodiments provide depositing a hetero-crystalline silicon cap layer over the bottom-up gap layer to improve gap filling and tune profiles of fin structures.

Abstract: A signal processing method and device of a MEMS microphone and a MEMS microphone are disclosed. The method comprises: acquiring a first electrical signal obtained by converting a received optical signal by an optical sensor disposed near a sound hole of the MEMS microphone; acquiring a second electrical signal output by the MEMS microphone; and judging that the second electrical signal is an interference signal when within a substantially overlapping time range, the first electrical signal acquired reaches a preset first threshold value and the second electrical signal acquired meets a preset condition.

Abstract: Provided is a recombinant protein, which contains a nerve growth factor (NGF) protein variant and a heterologous signal peptide linked to the NGF protein variant. Further provided are a combination containing an mRNA encoding the recombinant protein and a delivery vector, and the use thereof in the treatment of toxic/hereditary/metabolic peripheral neuropathy, nerve regeneration repair, and/or central nervous system degenerative diseases.

Abstract: The present disclosure relates to a soft magnetic composite with a two-dimensional magnetic moment and a high working frequency band, and a preparation method therefor. According to an embodiment, the soft magnetic composite with a two-dimensional magnetic moment may comprise: an insulating matrix; and two-dimensional magnetic moment micropowder dispersed in the insulating matrix, wherein inside the two-dimensional magnetic moment micropowder, a magnetic moment is distributed in a specific two-dimensional plane. The soft magnetic composite with a two-dimensional magnetic moment of the present disclosure has a higher cut-off frequency than existing materials, and therefore can be widely applied in the field of high frequency microwave application.

Abstract: An imaging device includes a pixel array including a 4×4 grouping of pixel circuits. The 4×4 grouping of pixel circuits includes four rows and four columns of the pixel array. A plurality of bitlines includes a first bitline, a second bitline, a third bitline, and a fourth bitline. Each one of the first, second, third, and fourth bitlines is coupled to a respective four pixel circuits in the 4×4 grouping of pixel circuits. Each one of the first, second, third, and fourth bitlines is coupled to all four of the rows and to all four of the columns of the 4×4 grouping of pixel circuits.

Abstract: A time-of-flight pixel array includes first transistors to transfer a first phase portion of charge from photodiodes responsive to reflected modulated light during a first subframe, and a second phase portion of the charge during a second subframe. The second phase is an inverted first phase. Second transistors transfer the second phase portion of the charge during the first subframe, and the first phase portion of the charge during the second subframe. Third transistors transfer a third phase portion of the charge during the first subframe, and a fourth phase portion of the charge during the second subframe. The fourth phase is an inverted third phase. The third phase is ninety degrees out of phase with the first phase. Fourth transistors transfer the fourth phase portion of the charge during the first subframe, and the third phase portion of the charge during the second subframe.

Abstract: A measuring system for measuring an object, the measuring system comprising a capture device comprising a set of illumination elements for illuminating the object and a set of cameras for capturing an image of the object, and a controlling and processing unit. The controlling and processing unit comprises at least a data acquisition functionality which is configured to provide surface data by activating at least a part of the set of illumination elements for illuminating the object with measuring light and capturing at least one image by detecting measuring light reflected at the object by means of at least a part of the set of cameras.

Abstract: A method for identifying a surface property of the skin of a person, the method comprises acquiring surface data of the skin of the person by activating illumination elements for illuminating the skin of the person with measuring light and capturing at least one image by detecting measuring light reflected by the skin of the person by means of a camera, and providing a 3D model of the skin of the person by processing the surface data. The 3D model is provided in a virtual space and a virtual light source is provided in the virtual space to virtually illuminate the 3D model with illumination light, wherein illumination parameters of the virtual light source are variable.

Abstract: A measuring system for measuring an object, the measuring system comprising a capture device comprising a set of illumination elements for illuminating the object and a set of cameras for capturing an image of the object, and a controlling and processing unit. The controlling and processing unit comprises at least a data acquisition functionality which is configured to provide surface data by activating at least a part of the set of illumination elements for illuminating the object with measuring light and capturing at least one image by detecting measuring light reflected at the object by means of at least a part of the set of cameras and a 3D-modelling functionality which is configured to provide a 3D model of the object by processing the surface data.

Abstract: Some implementations described herein provide a method that includes forming a set of fins of a device, where the set of fins comprises an isolation fin disposed between a first fin and a second fin of the set of fins. The method also includes forming an isolation structure on at least one side of the isolation fin, with the isolation fin providing electrical isolation between the first fin and the second fin of the set of fins. Additionally, or alternatively, some implementations described herein provide a method that includes forming a funnel-shaped isolation structure between a first set of fins and a second set of fins. Additionally, or alternatively, some implementations described herein provide a method that includes forming, after forming a first gate structure and a second gate structure, an isolation structure between the first gate structure and the second gate structure.

Abstract: In an embodiment, a device includes: an isolation region on a substrate; a first semiconductor fin protruding above the isolation region; a second semiconductor fin protruding above the isolation region; and a dielectric fin between the first semiconductor fin and the second semiconductor fin, the dielectric fin protruding above the isolation region, the dielectric fin including: a first layer including a first dielectric material having a first carbon concentration; and a second layer on the first layer, the second layer including a second dielectric material having a second carbon concentration, the second carbon concentration greater than the first carbon concentration.

Abstract: The present disclosure describes an exemplary fin structure formed on a substrate. The disclosed fin structure comprises an n-type doped region formed on a top portion of the substrate, a silicon epitaxial layer on the n-type doped region, and an epitaxial stack on the silicon epitaxial layer, wherein the epitaxial stack comprises a silicon-based seed layer in physical contact with the silicon epitaxial layer. The fin structure can further comprise a liner surrounding the n-type doped region, and a dielectric surrounding the liner.

Abstract: A method includes forming a gate stack of a transistor. The formation of the gate stack includes forming a silicon oxide layer on a semiconductor region, depositing a hafnium oxide layer over the silicon oxide layer, depositing a lanthanum oxide layer over the hafnium oxide layer, and depositing a work-function layer over the lanthanum oxide layer. Source/drain regions are formed on opposite sides of the gate stack.

Abstract: A pixel circuit includes a photodiode configured to photogenerate charge in response to reflected modulated light incident upon the photodiode. A first floating diffusion is configured to store a first portion of charge photogenerated in the photodiode. A first transfer transistor is configured to transfer the first portion of charge from the photodiode to the first floating diffusion in response to a first phase signal. A first storage node is configured to store the first portion of charge from the first floating diffusion. A first decoupling circuit has a first output responsive to a first input. The first input is coupled to the first floating diffusion and the first output is coupled to first storage node. A voltage swing at the first output is greater than a voltage swing at the first input.