Patents by Inventor Zheng Yang

Zheng Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240420318
    Abstract: A measuring system for measuring an object, the measuring system comprising a capture device comprising a set of illumination elements for illuminating the object and a set of cameras for capturing an image of the object, and a controlling and processing unit. The controlling and processing unit comprises at least a data acquisition functionality which is configured to provide surface data by activating at least a part of the set of illumination elements for illuminating the object with measuring light and capturing at least one image by detecting measuring light reflected at the object by means of at least a part of the set of cameras.
    Type: Application
    Filed: August 4, 2023
    Publication date: December 19, 2024
    Applicant: HEXAGON TECHNOLOGY CENTER GMBH
    Inventors: Gemma TAVERNI, Hakki KARAMAN, Stefan GEISSBÜHLER, Simon MARK, Zheng YANG, Burkhard BÖCKEM, Lukas BUCHMANN, Sandra TOBLER, Jan GLÜCKERT, Markus WETTSTEIN
  • Publication number: 20240418836
    Abstract: A time-of-flight pixel array includes first transistors to transfer a first phase portion of charge from photodiodes responsive to reflected modulated light during a first subframe, and a second phase portion of the charge during a second subframe. The second phase is an inverted first phase. Second transistors transfer the second phase portion of the charge during the first subframe, and the first phase portion of the charge during the second subframe. Third transistors transfer a third phase portion of the charge during the first subframe, and a fourth phase portion of the charge during the second subframe. The fourth phase is an inverted third phase. The third phase is ninety degrees out of phase with the first phase. Fourth transistors transfer the fourth phase portion of the charge during the first subframe, and the third phase portion of the charge during the second subframe.
    Type: Application
    Filed: October 28, 2021
    Publication date: December 19, 2024
    Inventors: Zheng Yang, Andreas Suess
  • Publication number: 20240415444
    Abstract: A method for identifying a surface property of the skin of a person, the method comprises acquiring surface data of the skin of the person by activating illumination elements for illuminating the skin of the person with measuring light and capturing at least one image by detecting measuring light reflected by the skin of the person by means of a camera, and providing a 3D model of the skin of the person by processing the surface data. The 3D model is provided in a virtual space and a virtual light source is provided in the virtual space to virtually illuminate the 3D model with illumination light, wherein illumination parameters of the virtual light source are variable.
    Type: Application
    Filed: August 4, 2023
    Publication date: December 19, 2024
    Applicant: HEXAGON TECHNOLOGY CENTER GMBH
    Inventors: Gemma TAVERNI, Hakki KARAMAN, Stefan GEISSBÜHLER, Simon MARK, Zheng YANG, Burkhard BÖCKEM, Lukas BUCHMANN, Sandra TOBLER, Jan GLÜCKERT, Markus WETTSTEIN
  • Publication number: 20240420317
    Abstract: A measuring system for measuring an object, the measuring system comprising a capture device comprising a set of illumination elements for illuminating the object and a set of cameras for capturing an image of the object, and a controlling and processing unit. The controlling and processing unit comprises at least a data acquisition functionality which is configured to provide surface data by activating at least a part of the set of illumination elements for illuminating the object with measuring light and capturing at least one image by detecting measuring light reflected at the object by means of at least a part of the set of cameras and a 3D-modelling functionality which is configured to provide a 3D model of the object by processing the surface data.
    Type: Application
    Filed: August 4, 2023
    Publication date: December 19, 2024
    Applicant: HEXAGON TECHNOLOGY CENTER GMBH
    Inventors: Gemma TAVERNI, Hakki KARAMAN, Stefan GEISSBÜHLER, Simon MARK, Zheng YANG, Burkhard BÖCKEM, Lukas BUCHMANN, Sandra TOBLER, Jan GLÜCKERT, Markus WETTSTEIN
  • Publication number: 20240395631
    Abstract: Some implementations described herein provide a method that includes forming a set of fins of a device, where the set of fins comprises an isolation fin disposed between a first fin and a second fin of the set of fins. The method also includes forming an isolation structure on at least one side of the isolation fin, with the isolation fin providing electrical isolation between the first fin and the second fin of the set of fins. Additionally, or alternatively, some implementations described herein provide a method that includes forming a funnel-shaped isolation structure between a first set of fins and a second set of fins. Additionally, or alternatively, some implementations described herein provide a method that includes forming, after forming a first gate structure and a second gate structure, an isolation structure between the first gate structure and the second gate structure.
    Type: Application
    Filed: July 30, 2024
    Publication date: November 28, 2024
    Inventors: Yi Chen HO, Yu-Chuan CHEN, Chieh CHENG, Chi-Hsun LIN, Zheng-Yang PAN, Shahaji B. MORE
  • Publication number: 20240379450
    Abstract: In an embodiment, a device includes: an isolation region on a substrate; a first semiconductor fin protruding above the isolation region; a second semiconductor fin protruding above the isolation region; and a dielectric fin between the first semiconductor fin and the second semiconductor fin, the dielectric fin protruding above the isolation region, the dielectric fin including: a first layer including a first dielectric material having a first carbon concentration; and a second layer on the first layer, the second layer including a second dielectric material having a second carbon concentration, the second carbon concentration greater than the first carbon concentration.
    Type: Application
    Filed: July 22, 2024
    Publication date: November 14, 2024
    Inventors: Yi Chen Ho, Yiting Chang, Chi-Hsun Lin, Zheng-Yang Pan
  • Publication number: 20240371941
    Abstract: The present disclosure describes an exemplary fin structure formed on a substrate. The disclosed fin structure comprises an n-type doped region formed on a top portion of the substrate, a silicon epitaxial layer on the n-type doped region, and an epitaxial stack on the silicon epitaxial layer, wherein the epitaxial stack comprises a silicon-based seed layer in physical contact with the silicon epitaxial layer. The fin structure can further comprise a liner surrounding the n-type doped region, and a dielectric surrounding the liner.
    Type: Application
    Filed: July 15, 2024
    Publication date: November 7, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shahaji B. MORE, Huai-Tei Yang, Zheng-Yang Pan, Shin-Cieh Chang, Chun-Chieh Wang, Cheng-Han Lee
  • Publication number: 20240363442
    Abstract: A method includes forming a gate stack of a transistor. The formation of the gate stack includes forming a silicon oxide layer on a semiconductor region, depositing a hafnium oxide layer over the silicon oxide layer, depositing a lanthanum oxide layer over the hafnium oxide layer, and depositing a work-function layer over the lanthanum oxide layer. Source/drain regions are formed on opposite sides of the gate stack.
    Type: Application
    Filed: July 11, 2024
    Publication date: October 31, 2024
    Inventors: Shahaji B. More, Zheng-Yang Pan, Shih-Chieh Chang, Chun Chieh Wang
  • Publication number: 20240357257
    Abstract: A pixel circuit includes a photodiode configured to photogenerate charge in response to reflected modulated light incident upon the photodiode. A first floating diffusion is configured to store a first portion of charge photogenerated in the photodiode. A first transfer transistor is configured to transfer the first portion of charge from the photodiode to the first floating diffusion in response to a first phase signal. A first storage node is configured to store the first portion of charge from the first floating diffusion. A first decoupling circuit has a first output responsive to a first input. The first input is coupled to the first floating diffusion and the first output is coupled to first storage node. A voltage swing at the first output is greater than a voltage swing at the first input.
    Type: Application
    Filed: July 3, 2024
    Publication date: October 24, 2024
    Inventors: Andreas Suess, Zheng Yang
  • Patent number: 12107015
    Abstract: A method includes forming a gate stack of a transistor. The formation of the gate stack includes forming a silicon oxide layer on a semiconductor region, depositing a hafnium oxide layer over the silicon oxide layer, depositing a lanthanum oxide layer over the hafnium oxide layer, and depositing a work-function layer over the lanthanum oxide layer. Source/drain regions are formed on opposite sides of the gate stack.
    Type: Grant
    Filed: April 16, 2021
    Date of Patent: October 1, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shahaji B. More, Zheng-Yang Pan, Shih-Chieh Chang, Chun Chieh Wang
  • Publication number: 20240315297
    Abstract: A solubilized steviol glycoside composition including one or more steviol glycosides and one or more steviol glycoside solubility enhancers can be used as a sweetener composition to sweeten other compositions (sweetenable compositions) such as foods, beverages, medicines, oral hygiene compositions, pharmaceuticals, nutraceuticals, and the like.
    Type: Application
    Filed: June 7, 2024
    Publication date: September 26, 2024
    Applicant: CARGILL, INCORPORATED
    Inventors: Anil Bhagwan KHARE, Zheng YANG
  • Patent number: 12080761
    Abstract: The present disclosure describes an exemplary fin structure formed on a substrate. The disclosed fin structure comprises an n-type doped region formed on a top portion of the substrate, a silicon epitaxial layer on the n-type doped region, and an epitaxial stack on the silicon epitaxial layer, wherein the epitaxial stack comprises a silicon-based seed layer in physical contact with the silicon epitaxial layer. The fin structure can further comprise a liner surrounding the n-type doped region, and a dielectric surrounding the liner.
    Type: Grant
    Filed: January 24, 2022
    Date of Patent: September 3, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shahaji B. More, Huai-Tei Yang, Zheng-Yang Pan, Shih-Chieh Chang, Chun-Chieh Wang, Cheng-Han Lee
  • Patent number: 12069391
    Abstract: A pixel circuit includes a photodiode configured to photogenerate charge in response to reflected modulated light incident upon the photodiode. A first floating diffusion is configured to store a first portion of charge photogenerated in the photodiode. A first transfer transistor is configured to transfer the first portion of charge from the photodiode to the first floating diffusion in response to a first phase signal. A first storage node is configured to store the first portion of charge from the first floating diffusion. A first decoupling circuit has a first output responsive to a first input. The first input is coupled to the first floating diffusion and the first output is coupled to first storage node. A voltage swing at the first output is greater than a voltage swing at the first input.
    Type: Grant
    Filed: July 29, 2021
    Date of Patent: August 20, 2024
    Assignee: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Andreas Suess, Zheng Yang
  • Patent number: 12057351
    Abstract: Some implementations described herein provide a method that includes forming a set of fins of a device, where the set of fins comprises an isolation fin disposed between a first fin and a second fin of the set of fins. The method also includes forming an isolation structure on at least one side of the isolation fin, with the isolation fin providing electrical isolation between the first fin and the second fin of the set of fins. Additionally, or alternatively, some implementations described herein provide a method that includes forming a funnel-shaped isolation structure between a first set of fins and a second set of fins. Additionally, or alternatively, some implementations described herein provide a method that includes forming, after forming a first gate structure and a second gate structure, an isolation structure between the first gate structure and the second gate structure.
    Type: Grant
    Filed: March 10, 2022
    Date of Patent: August 6, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi Chen Ho, Yu-Chuan Chen, Chieh Cheng, Chi-Hsun Lin, Zheng-Yang Pan, Shahaji B. More
  • Publication number: 20240260198
    Abstract: An equipment automatic alignment method and a process robot device using the same are provided. The equipment automatic alignment method includes following steps. An image of an equipment is obtained. The image is enhanced to obtain a plurality of candidate patterns. Each of the candidate patterns is expanded to obtain a first rectangular block and a second rectangular block. A plurality of first target patterns are obtained according to the first rectangular block, and a plurality of second target patterns are obtained according to the second rectangular block. A first base point is obtained from the first target patterns, and a second base point is obtained from the second target patterns. An operation command is generated according to the first base point and the second base point to automatically control an operation interface of the equipment, so that the first base point is aligned with the second base point.
    Type: Application
    Filed: February 24, 2023
    Publication date: August 1, 2024
    Inventors: Zheng-Yang LI, Li-Hsin YANG, Ming-Tung WANG, Shu-Mei FANG, Chia-Chan TSAI
  • Patent number: 12048555
    Abstract: A capture device for imaging a person, in particular the face or a part of the face of the person, the capture device comprises at least one camera for capturing an image of the person. The capture device comprises an infinity mirror comprising at least two mirror surfaces arranged oppositely from each other, a light source for emitting light, and a front side to look inside the infinity mirror. The infinity mirror is arranged at the capture device and placed and oriented relative to the capture device so that a capture range with an insight axis and an insight distance for the person is defined and defined capturing of the person by means of the at least one camera is provided when the person is positioned according to the capture range.
    Type: Grant
    Filed: August 4, 2023
    Date of Patent: July 30, 2024
    Assignee: HEXAGON TECHNOLOGY CENTER GMBH
    Inventors: Gemma Taverni, Hakki Karaman, Stefan Geissbühler, Simon Mark, Zheng Yang, Burkhard Böckem, Lukas Buchmann, Sandra Tobler, Jan Glückert, Markus Wettstein
  • Patent number: 12034368
    Abstract: Image sensors with improved negative pump voltage settling, and circuitry for the same, are disclosed herein. In one embodiment, a power supply settling circuit includes a negative charge pump and a reference voltage generator. An output of the negative charge pump is selectively coupled to a first node of the negative pump settling circuit via a first switch, and an output of the reference voltage generator is selectively coupled to a second node of the negative pump settling circuit via a second switch. The first node is further selectively coupled to ground via a third switch, and the second node is further selectively coupled to ground via a fourth switch. The first node can additionally be coupled to a first pad, and the second node can additionally be coupled to a second pad. The pads can each be coupled to a capacitor, such as an off-chip capacitor.
    Type: Grant
    Filed: February 24, 2023
    Date of Patent: July 9, 2024
    Assignee: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Zhenfu Tian, Dong Yang, Zheng Yang
  • Publication number: 20240175677
    Abstract: A measuring system for measuring an object, the measuring system comprising a measuring device and a controlling and processing unit. The measuring device comprises at least one camera, a first optical sensor and a second optical sensor, the first optical sensor provides a first field of view and is configured for collecting first measuring data representing a first part of the object, the second optical sensor provides a second field of view and is configured for collecting second measuring data representing a second part of the object. The second optical sensor comprises at least three light sources configured for illuminating the object from at least three different poses. The controlling and processing unit comprises a second capturing mode.
    Type: Application
    Filed: November 30, 2023
    Publication date: May 30, 2024
    Applicant: HEXAGON TECHNOLOGY CENTER GMBH
    Inventors: Zheng YANG, Johan STIGWALL, Thomas JENSEN
  • Patent number: 11988773
    Abstract: A light detection and ranging (LiDAR) system includes a rotatable polygon having a plurality of reflective sides including a first reflective side. The rotatable polygon configured to scan one or more first light signals in a first direction. The LiDAR system also includes a scanning optic configured to scan the one or more first light signals in a second direction different than the first direction. A first light source is configured to direct the one or more first light signals to one or more of the plurality of reflective sides of the rotatable polygon or the scanning optic. A first detector is configured to detect a first return light signal associated with a signal of the one or more first light signals. One or more optics are configured to focus the first return light signal on the first detector.
    Type: Grant
    Filed: February 22, 2019
    Date of Patent: May 21, 2024
    Assignee: Innovusion, Inc.
    Inventors: Rui Zhang, Huitao Sun, Zheng Yang, Yimin Li, Junwei Bao
  • Patent number: D1041024
    Type: Grant
    Filed: October 7, 2022
    Date of Patent: September 3, 2024
    Assignee: Quanovate Tech Inc.
    Inventor: Zheng Yang