Abstract: A time-of-flight pixel array includes photodiodes that generate charge in response to incident reflected modulated light. First transfer transistors transfer a first portion of the charge from the photodiodes in response to a first modulation signal and second transfer transistors transfer a second portion of the charge from the photodiodes in response to a second modulation signal, which is an inverted first modulation signal. First floating diffusions are coupled to the first transfer transistors. A binning transistor is coupled between one of the first floating diffusions and another one of the first floating diffusions. A first memory node is coupled to one of the first floating diffusions through a first sample and hold transistor and a second memory node is coupled to another one of the first floating diffusions through a second sample and hold transistor.

Abstract: A time-of-flight pixel circuit includes a photodiode configured to generate charge in response to modulated light reflected from an object. First and second transfer transistors are coupled to the photodiode. The first transfer transistor transfers a first portion of charge from the photodiode in response to a first modulation signal and the second transfer transistor transfers a second portion of charge from the photodiode in response to a second modulation signal. The second modulation signal is an inverted first modulation signal. A first floating diffusion is coupled to the first transfer transistor to receive the first portion of charge in response to a first modulation signal. Each one of a first plurality of sample and hold transistors is coupled between a respective one of a first plurality of memory nodes and the first transfer transistor.

Abstract: An imaging system includes a pixel array configured to generate image charge voltage signals in response to incident light received from an external scene. An infrared illumination source is deactivated during the capture of a first image of the external scene and activated during the capture of a second image of the external scene. An array of sample and hold circuits is coupled to the pixel array. Each sample and hold circuit is coupled to a respective pixel of the pixel array and includes first and second capacitors to store first and second image charge voltage signals of the captured first and second images, respectively. A column voltage domain differential amplifier is coupled to the first and second capacitors to determine a difference between the first and second image charge voltage signals to identify an object in a foreground of the external scene.

Abstract: A reflector arrangement for determining the position or marking of target points, having at least one retroreflector, and a beam detection unit, by means of which the orientation measurement radiation passing through the retroreflector is acquirable. The beam detection unit comprises a first sensor for generating a signal in dependence on an acquisition of orientation measurement radiation and a first beam guiding unit. The first sensor and the first beam guiding unit are arranged such that a detection field of view for acquiring the orientation measurement radiation is defined, an alignment of the detection field of view around the yaw axis is variable and orientation measurement radiation passing through the retroreflector is acquirable in dependence on the alignment of the detection field of view with the first sensor.

Abstract: The present disclosure provides fusion proteins comprising an IL-10 polypeptide and a second polypeptide, e.g., an Fc polypeptide. Certain aspects of the present disclosure are directed to methods of treating a subject comprising administering the IL-10 fusion protein. In certain aspects, the subject is afflicted with a cancer.

Abstract: Provided is use of IL-22 dimer in prevention or treatment of virus-induced organ injury or failure, such as lung injury or failure, sepsis, septic shock, or multiple organ dysfunction syndrome (MODS) associated with virus infection.

Abstract: A signal processing method and device of a MEMS microphone and a MEMS microphone are disclosed. The method comprises: acquiring a first electrical signal obtained by converting a received optical signal by an optical sensor disposed near a sound hole of the MEMS microphone; acquiring a second electrical signal output by the MEMS microphone; and judging that the second electrical signal is an interference signal when within a substantially overlapping time range, the first electrical signal acquired reaches a preset first threshold value and the second electrical signal acquired meets a preset condition.

Abstract: A system for monitored additive manufacturing of an object, comprising a manufacturing unit], designed for additive manufacturing of the object based on metal-containing manufacturing material in a manufacturing volume, wherein the object is built up by repeated layer-by-layer provision of the manufacturing material in defined quantity and accurately-positioned forming of the provided manufacturing material. The system moreover comprises an optical checking unit having at least one projector and two cameras and a control and processing unit. The manufacturing volume comprises an optical transmission region, the projector and cameras—are arranged outside the manufacturing volume in a fixed position relationship and are aligned in such a way that respective optical axes extend through a respective transmission region, by means of the projector, a projection can be generated on a manufacturing area and at least a common part of the manufacturing area on which the projection can be overlaid can be captured.

Abstract: A pixel circuit includes a photodiode configured to photogenerate charge in response to reflected modulated light incident upon the photodiode. A first floating diffusion is configured to store a first portion of charge photogenerated in the photodiode. A first transfer transistor is configured to transfer the first portion of charge from the photodiode to the first floating diffusion in response to a first phase signal. A first storage node is configured to store the first portion of charge from the first floating diffusion. A first decoupling circuit has a first output responsive to a first input. The first input is coupled to the first floating diffusion and the first output is coupled to first storage node. A voltage swing at the first output is greater than a voltage swing at the first input.

Abstract: An imaging device includes a pixel array including a 4x4 grouping of pixel circuits. The 4x4 grouping of pixel circuits includes four rows and four columns of the pixel array. A plurality of bitlines includes a first bitline, a second bitline, a third bitline, and a fourth bitline. Each one of the first, second, third, and fourth bitlines is coupled to a respective four pixel circuits in the 4x4 grouping of pixel circuits. Each one of the first, second, third, and fourth bitlines is coupled to all four of the rows and to all four of the columns of the 4x4 grouping of pixel circuits.

Abstract: Disclosed herein are devices, systems, methods and kits for performing immunoassay tests on a sample. The immunoassay devices may be used in conjunction with diagnostic reader systems for obtaining a sensitive read-out of the immunoassay results. The immunoassay devices may be especially suited for the detection of at least a first analyte and a second analyte in a sample. The immunoassay devices and methods may utilize a competitive binding-like assay and a sandwich binding assay to detect analytes in a sample.

Abstract: In an embodiment, a device includes: an isolation region on a substrate; a first semiconductor fin protruding above the isolation region; a second semiconductor fin protruding above the isolation region; and a dielectric fin between the first semiconductor fin and the second semiconductor fin, the dielectric fin protruding above the isolation region, the dielectric fin including: a first layer including a first dielectric material having a first carbon concentration; and a second layer on the first layer, the second layer including a second dielectric material having a second carbon concentration, the second carbon concentration greater than the first carbon concentration.

Abstract: Provided herein are various embodiments of determining a cation exchange capacity of a rock sample. One embodiment of a method of determining a cation exchange capacity of a rock sample comprises equilibrating the rock sample to a relative humidity, performing a dielectric permittivity measurement on the rock sample at the relative humidity, and determining a cation exchange capacity of the rock sample based on the dielectric permittivity measurement. One embodiment of a method of determining a cation exchange capacity of a rock sample comprises receiving a dielectric permittivity measurement on the rock sample, and determining a cation exchange capacity for the rock sample based on the dielectric permittivity measurement of the rock sample and a relationship between cation exchange capacity and dielectric permittivity measurements for mineral mixtures corresponding to a range of cation exchange capacity values.

Abstract: A reflector arrangement for position determination and/or marking of target points, comprising a retroreflector and a first sensor arrangement, by means of which the orientation measurement radiation passing through the retroreflector is acquirable. The first sensor arrangement comprises a first optical assembly providing a fisheye lens, and a first sensor, wherein the retroreflector and the first sensor arrangement are arranged in such a way that orientation measurement radiation passing through the retroreflector is projectable onto the detection surface of the first sensor by means of the first optical assembly.

Abstract: An apparatus for use in an automated optical inspection in a production line, the apparatus including a frame accommodating a plurality of illumination units surrounding an integrated optical imaging unit, wherein each illumination unit is rotatable in a synchronized manner relative to each unit, in use, to vary an illumination angle at an intended target, to enhance the visualization of the intended target captured by the optical imaging unit.

Abstract: An automatic adjustment method and an automatic adjustment device of a beam of a semiconductor apparatus, and a training method of a parameter adjustment model are provided. The automatic adjustment method of the beam of the semiconductor apparatus includes the following steps. The semiconductor apparatus generates the beam. A wave curve of the beam is obtained. The wave curve is segmented into several sections. The slope of each of the sections is obtained. Several environmental factors of the semiconductor apparatus are obtained. According to the slopes and the environmental factors, at least one parameter adjustment command of the semiconductor apparatus is analyzed through the parameter adjustment model.

Abstract: In a method of manufacturing a semiconductor device, a fin structure having a channel region protruding from an isolation insulating layer disposed over a semiconductor substrate is formed, a cleaning operation is performed, and an epitaxial semiconductor layer is formed over the channel region. The cleaning operation and the forming the epitaxial semiconductor layer are performed in a same chamber without breaking vacuum.

Abstract: A measuring system for acquiring three-dimensional measuring points, comprising a base unit, a support unit mounted on the base unit and rotatable relative to the base unit around an azimuth axis, an emitting unit, a receiving unit, a directing unit mounted in the support unit, and configured for directing a transmission beam from the emitting unit towards a scene, directing a reception beam from the scene to the receiving unit, a first actuator configured for rotating the support unit relative to the base unit around the azimuth axis, a second actuator configured for rotating the directing unit relative to the support unit around the elevation axis, a first angle encoder configured for measuring a rotatory position of the support unit, a second angle encoder configured for measuring a rotatory position of the directing unit, a camera comprising an image sensor.

Abstract: An imaging device includes pixel circuits that include either image sensing photodiodes or phase detection autofocus (PDAF) photodiodes. The PDAF photodiodes are included in a first PDAF pixel circuit included in a first grouping of rows, and a second PDAF pixel circuit included in a second grouping of rows of a pixel array. Bitline pairs are coupled to respective columns of the pixel array. Each bitline pair includes a first bitline coupled to the first grouping of rows and a second bitline coupled to the second grouping of rows of respective columns of the pixel array. Multiplexers are configured to select one of respective first or second bitlines of each bitline pair. A PDAF multiplexer is coupled to a PDAF select signal and the second PDAF circuit through a respective bitline pair. The remaining multiplexers are coupled to a select signal and are coupled to remaining bitline pairs.

Abstract: A method includes providing a substrate having a gate structure over a first side of the substrate, forming a recess adjacent to the gate structure, and forming in the recess a first semiconductor layer having a dopant, the first semiconductor layer being non-conformal, the first semiconductor layer lining the recess and extending from a bottom of the recess to a top of the recess. The method further includes forming a second semiconductor layer having the dopant in the recess and over the first semiconductor layer, a second concentration of the dopant in the second semiconductor layer being higher than a first concentration of the dopant in the first semiconductor layer.