Patents by Inventor Zheng Yuan

Zheng Yuan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6654032
    Abstract: An apparatus, method, and computer program for instant remote document sharing. In one embodiment, referred to as “remote document sharing,” a file on a remote server is converted to a “shared document” which is distributed to the members of a data conference for review. In another embodiment, referred to as “remote application viewing,” the “owner” of a document on a remote server shares the screens created by an application associated with the document. The other members of the data conference can view the screens, but cannot interact with the application. In another embodiment, referred to as “remote application sharing,” the “owner” of a document on a remote server shares the screens created by an application associated with the document. The other members of the data conference can view the screens and interact with the application.
    Type: Grant
    Filed: December 23, 1999
    Date of Patent: November 25, 2003
    Assignee: Webex Communications, Inc.
    Inventors: Min Zhu, Guanghong Yang, Zheng Yuan, Song Xiang Wei
  • Patent number: 6624091
    Abstract: A method of forming a fill layer over a layer in a semiconductor stack having gaps of high aspect ratio topography, and products produced thereby.
    Type: Grant
    Filed: May 7, 2001
    Date of Patent: September 23, 2003
    Assignee: Applied Materials, Inc.
    Inventor: Zheng Yuan
  • Publication number: 20030167301
    Abstract: A distributed collaborative computer system is provided that comprises a plurality of server computers interconnected via a high-speed link. Client computers can connect to any available server computer and start or join a conference hosted on either the server computer to which the client computer is connected or any other server in the system. As a result, the system and method of the present invention is easily scalable to support an arbitrary number of participants to a conference by merely adding the appropriate number of server computers to the system. In addition, by replicating the conference information on more than one server computer, the single point of failure limitation is eliminated. In fact, if a server hosting or participating in a conference malfunctions, the failure is detected by other server computers and the client computer is able to reconnect to the conference through a new server computer.
    Type: Application
    Filed: December 29, 2000
    Publication date: September 4, 2003
    Inventors: Min Zhu, Jian Shen, Steven Li, Guanghong Yang, Bin Zhao, Shi Yan, Zheng Yuan
  • Publication number: 20030161951
    Abstract: A thin layer of silicon oxide is formed by cyclic introduction of a silicon-containing precursor gas and an oxidizing gas separated by an intervening purge step. The resulting thin oxide layer enables subsequent conventional CVD of oxide to produce a more uniform deposited oxide layer over nonhomogenous surfaces, for example the silicon nitride mask/thermal oxide liner surfaces created during fabrication of shallow trench isolation structures.
    Type: Application
    Filed: February 27, 2002
    Publication date: August 28, 2003
    Applicant: Applied Materials, Inc. a Delaware Corporation
    Inventors: Zheng Yuan, Xinyun Xia
  • Publication number: 20030140851
    Abstract: A gas distribution showerhead for use in a semiconductor fabrication process features a face plate having gas outlet ports in the form of elongated slots or channels. The use of elongated gas outlet ports in accordance with embodiments of the present invention substantially reduces the incidence of undesirable spotting and streaking of deposited material where the showerhead is closely spaced from the wafer. A showerhead featuring a face plate having a tapered profile to reduce edge thickness of deposited material at close face plate-to-wafer spacings is also disclosed.
    Type: Application
    Filed: January 25, 2002
    Publication date: July 31, 2003
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Karthik Janakiraman, Nitin Ingle, Zheng Yuan, Steven Gianoulakis
  • Publication number: 20030127427
    Abstract: A method of forming a contact in an integrated circuit between a first metalization layer and a silicon substrate. In one embodiment the method comprises forming a premetal dielectric layer over the silicon substrate, etching a contact hole through the premetal dielectric layer and then forming a thin silicon nitride layer on an outer surface of the contact hole. The silicon nitride layer reduces overetching that may otherwise occur when oxidation build-up is removed from the silicon interface within the contact hole by a preclean process. After the preclean process, the contact hole is then filled with one or more conductive materials. In various embodiments the silicon nitride layer is formed by exposing the contact hole to a nitrogen plasma, depositing the layer by a chemical vapor deposition process and depositing the layer by an atomic layer deposition process. In other embodiments, the method is applicable to the formation of vias through intermetal dielectric layers.
    Type: Application
    Filed: January 7, 2002
    Publication date: July 10, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Zheng Yuan, Steve Ghanayem, Randhir P.S. Thakur
  • Patent number: 6544345
    Abstract: An in-situ, two step or combination, method and system for cleaning of semiconductor manufacturing equipment is provided. The present invention utilizes two separate fluorine based chemistries in each step which selectively target the removal of different types of deposits that build up on the equipment surfaces. In particular, powdery and dense film-like solid deposits, as well as a combination of both, build up on the chamber surfaces and associated equipment components. These two types of deposits are removed selectively by the present invention. Such selective targeting of combined cleaning steps, yields an improved cleaning technique. In another embodiment, the method and system of the present invention provides for cleaning of the chamber and associated equipment using separate steps with different chemicals, and then performing these steps in a variety of desired sequences.
    Type: Grant
    Filed: July 12, 2000
    Date of Patent: April 8, 2003
    Assignee: Asml US, Inc.
    Inventors: Bruce E. Mayer, Robert H. Chatham, III, Nitin K. Ingle, Zheng Yuan
  • Publication number: 20030019427
    Abstract: A method and apparatus for forming an in situ stabilized high concentration borophosphosilicate glass film on a semiconductor wafer or substrate. In an embodiment, the method starts by providing the substrate into a chamber. The method continues by providing a silicon source, an oxygen source, a boron source and a phosphorous source into the chamber to form a high concentration borophosphosilicate glass layer on the substrate. The method further includes reflowing the high concentration borophosphosilicate glass layer formed on the substrate.
    Type: Application
    Filed: July 24, 2001
    Publication date: January 30, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Steve Ghanayem, Daniel A. Carl, John T. Boland, Cary Ching, Zheng Yuan
  • Publication number: 20020163028
    Abstract: A method of forming a fill layer over a layer in a semiconductor stack having gaps of high aspect ratio topography, and products produced thereby.
    Type: Application
    Filed: May 7, 2001
    Publication date: November 7, 2002
    Applicant: Applied Materials, Inc.
    Inventor: Zheng Yuan
  • Patent number: 6465044
    Abstract: This invention relates to a method of depositing silicon oxide films on the surface of semiconductor substrates, and more particularly to depositing such films by chemical vapor deposition using alkylsiloxane oligomers precursors with ozone.
    Type: Grant
    Filed: April 4, 2000
    Date of Patent: October 15, 2002
    Assignee: Silicon Valley Group, Thermal Systems LLP
    Inventors: Sanjeev Jain, Zheng Yuan
  • Patent number: 5855957
    Abstract: A chemical vapor deposition apparatus and method for forming an oxide thin film on a surface of a substrate. The system includes a reaction chamber having a support for holding a substrate and an injector positioned to inject gaseous substances into the reaction chamber. The injector includes a central injection port coupled to a source of ozone and at least two outer injection ports positioned on opposite sides of the central injection port and coupled to a source of chemical reagent. Ozone and chemical reagent are separately injected into the reaction chamber through the central injection port and outer injection ports, respectively, with the ozone and chemical mixing in the area between the injector and the substrate.
    Type: Grant
    Filed: February 18, 1997
    Date of Patent: January 5, 1999
    Assignee: Watkins-Johnson Company
    Inventor: Zheng Yuan