Abstract: In one embodiment, the systems and methods detect audio content shared during a collaboration session; detect a participant associated with originating the audio content; store or record audio content; and automatically associate the audio content with the participant.

Abstract: A method for forming a semiconductor structure includes forming a plurality of features across a surface of a substrate, with at least one space being between two adjacent features. A first dielectric layer is formed on the features and within the at least one space. A portion of the first dielectric layer interacts with a reactant derived from a first precursor and a second precursor to form a first solid product. The first solid product is decomposed to substantially remove the portion of the first dielectric layer. A second dielectric layer is formed to substantially fill the at least one space.

Abstract: In one embodiment, the methods and apparatuses display a list representing a plurality of applications; view a status of each of the plurality of applications; view a target application as an available application from the plurality of applications; and remotely access the target application on a local device.

Abstract: In one embodiment, the systems and methods attend a collaboration session; detect content shared during the collaboration session; automatically record the content and a time stamp corresponding to the content; and play at least a portion of the content during the collaboration session.

Abstract: Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.

Abstract: A method of annealing a substrate that has a trench containing a dielectric material formed on a silicon nitride layer between the dielectric material and the substrate, where the method includes annealing the substrate at a first temperature of about 800° C. or more in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen.

Abstract: A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate, where the method includes the steps of generating water vapor by contacting hydrogen gas and oxygen gas with a water vapor generation catalyst, and providing the water vapor to the process chamber. The method also includes flowing a silicon-containing precursor into the process chamber housing the substrate, flowing an oxidizing gas into the chamber, and causing a reaction between the silicon-containing precursor, the oxidizing gas and the water vapor to form the dielectric material in the trench. The method may also include increasing over time a ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber to alter a rate of deposition of the dielectric material.

Abstract: A method for enabling recovery of data stored in a computer network, the computer network comprises a plurality of computer nodes, the method comprising the steps of generating a set of redundancy data based on a predetermined relationship between a first set of data and a second set of data, injecting the first set of data, the second set of data and the set of redundancy data into separate looping paths of the computer network, wherein a looping path is a path along a plurality of computer nodes in which data is transported, and the looping paths are defined in separate communication channels between the computer nodes and pass through at least one common node of the computer network, such that the redundancy data and the second set of data can be used to reconstruct the first set of data based on the predetermined relationship between the first and second set of data when the first set of data is lost, thereby enabling the recovery of data stored in the computer network.

Abstract: Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.

Abstract: A method of filling a gap defined by adjacent raised features on a substrate includes providing a flow of a silicon-containing processing gas to a chamber housing the substrate and providing a flow of an oxidizing gas to the chamber. The method also includes varying over time a ratio of the (silicon-containing processing gas):(oxidizing gas). The method also includes exposing the substrate to nitrous oxide at a temperature less than about 900° C. to anneal the deposited film.

Abstract: A method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 200° C. to about 800° C. in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen. In addition, a method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 400° C. to about 800° C. in the presence of an oxygen containing gas, purging the oxygen containing gas away from the substrate, and raising the substrate to a second temperature from about 900° C. to about 1100° C. to further anneal the substrate in an atmosphere that lacks oxygen.

Abstract: A method of filling a gap defined by adjacent raised features on a substrate includes providing a flow of a silicon-containing processing gas to a chamber housing the substrate and providing a flow of an oxidizing gas to the chamber. The method also includes depositing a first portion of a film as a substantially conformal layer in the gap by causing a reaction between the silicon-containing processing gas and the oxidizing gas. Depositing the conformal layer includes varying over time a ratio of the (silicon-containing processing gas):(oxidizing gas) and regulating the chamber to a pressure in a range from about 200 torr to about 760 torr throughout deposition of the conformal layer. The method also includes depositing a second portion of the film as a bulk layer.

Abstract: Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.

Abstract: A distributed collaborative computer system is provided that comprises a plurality of server computers interconnected via a high-speed link. Client computers can connect to any available server computer and start or join a conference hosted on either the server computer to which the client computer is connected or any other server in the system. As a result, the system and method of the present invention is easily scalable to support an arbitrary number of participants to a conference by merely adding the appropriate number of server computers to the system. In addition, by replicating the conference information on more than one server computer, the single point of failure limitation is eliminated. In fact, if a server hosting or participating in a conference malfunctions, the failure is detected by other server computers and the client computer is able to reconnect to the conference through a new server computer.

Abstract: A distributed collaborative computer system is provided that comprises a plurality of server computers interconnected via a high-speed link. Client computers can connect to any available server computer and start or join a conference hosted on either the server computer to which the client computer is connected or any other server in the system. As a result, the system and method of the present invention is easily scalable to support an arbitrary number of participants to a conference by merely adding the appropriate number of server computers to the system. In addition, by replicating the conference information on more than one server computer, the single point of failure limitation is eliminated. In fact, if a server hosting or participating in a conference malfunctions, the failure is detected by other server computers and the client computer is able to reconnect to the conference through a new server computer.

Abstract: A low-thermal-budget gapfill process is provided for filling a gap formed between two adjacent raised features on a strained-silicon substrate as part of a shallow-trench-isolation process. An electrically insulating liner is deposited using atomic-layer deposition and polysilicon is deposited over the electrically insulating liner, with both stages being conducted at temperatures below 700° C.

Abstract: Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.

Abstract: Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.

Abstract: A method of filling a gap formed between adjacent raised surfaces on a substrate. In one embodiment the method comprises depositing a boron-doped silica glass (BSG) layer over the substrate to partially fill the gap using a thermal CVD process; exposing the BSG layer to a steam ambient at a temperature above the BSG layer's Eutectic temperature; removing an upper portion of the BSG layer by exposing the layer to a fluorine-containing etchant; and depositing an undoped silica glass (USG) layer over the BSG layer to fill the remainder of the gap.

Abstract: A method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 200° C. to about 800° C. in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen. In addition, a method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 400° C. to about 800° C. in the presence of an oxygen containing gas, purging the oxygen containing gas away from the substrate, and raising the substrate to a second temperature from about 900° C. to about 1100° C. to further anneal the substrate in an atmosphere that lacks oxygen.