Abstract: A voltammetric method for measuring the concentration of additives in a plating solution. The method generally includes providing the plating solution, including an unknown concentration of an additive to be measured, cycling an inert working electrode potential to alternately deposit and strip metal from the working electrode surface in the plating solution, wherein the metal deposition step includes a constant voltage plateau at a plateau potential sufficient to eliminate the interference of additives in the plating solution other than the additive to be measured. The method further includes determining a profile of the anodic current resulting from the applied working electrode potential as a function of time and determining a stripping peak area. The method may further include determining the concentration of the additive to be measured by the ratio of the stripping peak area from the profile to a stripping peak area of a base solution not including the additive to be measured.

Abstract: A floor assembly includes a plurality of floor units each includes two side grooves and two bottom grooves. Any two adjacent floor units are connected side by side by a connection member which has a base plate with two engaging portions extending from a top surface thereof. An upright portion extends from the top surface of the base plate and a horizontal plate extends horizontally from the upright portion. Two ends of the horizontal plate are respectively engaged with two respective side grooves of two adjacent floor units, and the two engaging portions are engaged with the two bottom grooves of the two adjacent floor units.

Abstract: The present invention generally relates to an apparatus and method of evaluating electroplating solutions and conditions. In one embodiment, the method of evaluating electroplating solutions comprises utilizing an electrochemical measuring cell having a working electrode having a lid with at least one hole, a counter electrode, and a reference electrode. The working electrode, the counter electrode, and the reference electrode are immersed in at least one sample of at least one electroplating solution. The lid is disposed over the working electrode forming a chamber between the working electrode and the lid. The lid further has a hole to allow an electroplating solution to flow into the chamber and reach the working electrode. The potential of the working electrode in the sample of the electroplating solution is measured over time with a constant current supplied to the working electrode.

Abstract: A wood floor structure includes a pad layer composed of a plurality of pads and each pad has at least two taper-shaped protrusions extending from each side thereof. Each pad has a rod extending from a top surface thereof. A plurality of wood strips each have at least one hole defined in a bottom thereof so as to receive said rod in said at least one hole.

Abstract: Embodiments of the invention generally provide and apparatus and method for measuring organic additives in an ECP solution. The apparatus generally includes a high performance liquid chromatography (HPLC) column configured to receive an electrolyte fluid supply. The HPLC column operates to separate various organic additives from the electrolyte solution flowing therethrough. The remaining flow of electrolyte solution, which generally contains only a single organic additive therein, may then be passed to a CVS apparatus for analysis thereof. Inasmuch as the electrolyte flow contains only a single organic additive, the measurement accuracy is improved substantially. Further, a plurality of HPLC columns may be implemented to separate various organics out of the flowing electrolyte solution, and therefore, measure the flowing electrolyte solution for a plurality of organic additive concentrations therein.

Abstract: The invention provides a system and a method for dynamic RF inductive and capacitive coupling control to improve plasma substrate processing, as well as for achieving contamination and defect reduction. A plasma reactor includes a substrate support disposed in a chamber. An RF coil is disposed adjacent the chamber for inductively coupling RF energy into the chamber. An electrode is disposed adjacent the chamber and has a voltage for capacitively coupling energy into the chamber. The electrode is spaced from the substrate support and the RF coil. An electrode adjusting member is coupled with the electrode for dynamically adjusting the voltage in the electrode to vary the capacitive coupling for improved plasma ignition and plasma stability. A Faraday shield may be placed between the RF coil and the plasma process region in the chamber to suppress capacitive coupling of the RF coil.

Abstract: A substrate processing apparatus has a chamber with a substrate transport to transport a substrate onto a substrate support in the chamber, a gas supply to provide a gas in the chamber, a gas energizer to energize the gas, and a gas exhaust to exhaust the gas. A controller operates one or more of the substrate support, gas supply, gas energizer, and gas exhaust, to set etching process conditions in the chamber to etch a plurality of substrates, thereby depositing etchant residues on surfaces in the chamber. The controller also operates one or more of the substrate support, gas supply, gas energizer, and gas exhaust, to set cleaning process conditions in the chamber to clean the etchant residues. The cleaning process conditions comprise a volumetric flow ratio of O2 to CF4 of from about 1:1 to about 1:40.

Abstract: An apparatus 20 and process for treating and conditioning an etching chamber 30, and cleaning a thin, non-homogeneous, etch residue on the walls 45 and components of the etching chamber 30. In the etching step, a substrate 25 is etched in the etching chamber 30 to deposit a thin etch residue layer on the surfaces of the walls and components in the chamber. In the cleaning step, cleaning gas is introduced into a remote chamber 40 adjacent to the etching chamber 30, and microwave or RF energy is applied inside the remote chamber to form an activated cleaning gas. A short burst of activated cleaning gas at a high flow rate is introduced into the etching chamber 30 to clean the etch residue on the walls 45 and components of the etching chamber.

Abstract: A process for etching a substrate 25 in an etching chamber 30, and simultaneously cleaning a thin, non-homogeneous, etch residue deposited on the surfaces of the walls 45 and components of the etching chamber 30. In the etching step, process gas comprising etchant gas is used to etch a substrate 25 in the etching chamber 30 thereby depositing etch residue inside the chamber 30. Cleaning gas is added to the process gas for a sufficient time and in a volumetric flow ratio that is sufficiently high, to react with and remove substantially all the etch residue deposited by the process gas. The present method advantageously cleans the etch residue in the chamber 30, during the etching process, and without use of separate cleaning, conditioning, and seasoning process steps.