Abstract: Embodiments of the current invention describe a method of plating platinum selectively on a copper film using a self-initiated electroless process. In particular, platinum films are plated onto very thin copper films having a thickness of less than 300 angstroms. The electroless plating solution and the resulting structure are also described. This process has applications in the semiconductor processing of logic devices, memory devices, and photovoltaic devices.

Abstract: Combinatorial electrochemical deposition is described, including dividing a wafer into a plurality of substrates for combinatorial processing, immersing the plurality of substrates at least partially into a plurality of cells, within one integrated tool, including electrolytes, the cells also including electrodes immersed in the electrolytes, depositing layers on the substrates by applying potentials across the substrates and the electrodes, and varying characteristics of the depositing to perform the combinatorial processing.

Abstract: Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.

Abstract: This invention describes a collagen fiber reconstituted rawhide useful in the production of pet chews, and a method for making the same. Beginning materials include animal skins with hair, depilated limed splits and leftovers from the manufacture of rawhide pet chews. The materials are pretreated, ground, subjected to acid treatment to swell and separate the collagen fibers that comprise the animal hide, further ground into pulp, vacuum filtered, mixed with a dehydration agent that chemically shrinks the expanded fibers, drained, formed and dried into sheet and finally exposed to a cross-linking agent to increase the adhesive strength of the end product. Edible materials, including meats, may be added to the solution prior to draining, to enhance the nutritional value and palatability of the final product, and the reconstituted rawhide sheets may be bleached for appearance.

Abstract: The present disclosure includes a texture formulation that includes an aliphatic diol, an alkaline compound and water which provides a consistent textured region across a silicon surface suitable for solar cell applications. Processes for texturing a crystalline silicon substrate using these formulations are also described.

Abstract: A method is disclosed for depositing a copper seed layer onto a substrate surface. In one embodiment, the method includes providing a substrate having a barrier layer disposed on a substrate surface, wherein the barrier layer has a barrier surface comprising a material selected from the group consisting of cobalt, ruthenium, tungsten, titanium, and a compound of two or more thereof, and exposing the substrate to a non-complexed, acid electrochemical plating solution with a plating bias applied across the substrate surface to deposit a copper-containing seed layer directly on the barrier surface without intervening layer disposed therebetween.

Abstract: Processes for minimizing contact resistance when using nickel silicide (NiSi) and other similar contact materials are described. These processes include optimizing silicide surface cleaning, silicide surface passivation against oxidation and techniques for diffusion barrier/catalyst layer deposition. Additionally, processes for generating a noble metal (for example platinum, iridium, rhenium, ruthenium, and alloys thereof) activation layer that enables the electroless barrier layer deposition on a NiSi-based contact material are described. The processes may be employed when using NiSi-based materials in other end products.

Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

Abstract: Processes for minimizing contact resistance when using nickel silicide (NiSi) and other similar contact materials are described. These processes include optimizing silicide surface cleaning, silicide surface passivation against oxidation and techniques for diffusion barrier/catalyst layer deposition. Additionally, processes for generating a noble metal (for example platinum, iridium, rhenium, ruthenium, and alloys thereof) activation layer that enables the electroless barrier layer deposition on a NiSi-based contact material are described. The processes may be employed when using NiSi-based materials in other end products. The processes may be employed on silicon-based materials.

Abstract: Embodiments of the current invention describe a high performance combinatorial method and apparatus for the combinatorial development of coatings by a dip-coating process. The dip-coating process may be used for multiple applications, including forming coatings from varied sol-gel formulations, coating substrates uniformly with particles to combinatorially test particle removal formulations, and the dipping of substrates into texturing formulations to combinatorially develop the texturing formulations.

Abstract: The current invention describes a process and texturing solution for texturing a crystalline silicon substrate to provide a light trapping surface within a crystalline silicon based solar cell. In an embodiment the texturing process includes a pre-treatment of hydrofluoric acid followed by the application of a texturing solution that includes potassium hydroxide (KOH) and butanol. The application of the texturing solution may be followed by a hydrofluoric acid post-treatment. A combinatorial method of optimizing the textured surface of a crystalline silicon substrate is also described.

Abstract: A flash memory device, includes a case (1) having a chamber and an opening (1120) at one end thereof. A memory module (2) is received in the chamber and has a plug (22) formed at one end thereof. A pole (3) has a first portion (30) received in the chamber to drive the plug of the memory module moving in or out of the opening, and a second portion (31) opposite to the first portion. A revolver mechanism (5) has a main body (51) which is rotatable, and a spindle (52) assembled to the main body and rotatablely coupled to the second portion to drive the pole moving along a linear direction.

Abstract: Methods for treating a substrate in preparation for a subsequent process are presented, the method including: receiving the substrate, the substrate comprising conductive regions and dielectric regions; and applying an oxidizing agent to the substrate in a manner so that the dielectric regions are oxidized to become increasingly hydrophilic to enable access to the conductive regions in the subsequent process, wherein the dielectric region is treated to a depth in the range of approximately 1 to 5 atomic layers. In some embodiments, methods further include processing the substrate, wherein processing the conductive regions are selectively enhanced. In some embodiments, the oxidizing agent includes atmospheric pressure plasma and UV radiation.

Abstract: Embodiments of the current invention include methods of improving a process of forming a textured TCO film by combinatorial methods. The combinatorial method may include depositing a TCO by physical vapor deposition or sputtering, annealing the TCO, and etching the TCO where at least one of the depositing, the annealing, or the etching is performed combinatorially. Embodiments of the current invention also include improved methods of forming the TCO based on the results of combinatorial testing.

Abstract: A flash memory device (8) includes a memory module (2), a screw (3), a gear (4) and a case (1). The memory module (2) has a plug (22) formed at one end thereof. The screw (3) has a first end (30) and a second end (31) opposite to the first end (30). The first end (30) is mounted on the memory module (2). The gear (4) is positioned on the screw (3) and is rotatable relative to the screw (3). The case (1) includes a receiving cavity for receiving the memory module (2), and a first inner case (10) with a first rack (1002) engaging with one side of the gear (4). The first rack (1002) extends along a length direction of the case (1). The memory module (2) has a second rack (2011) engaging with another side of the gear (4). The second rack (2011) extends along the length direction too. The screw (3) is located between the first rack (1002) and the second rack (2011).

Abstract: Surface texturing of the transparent conductive oxide (TCO) front contact of a thin film photovoltaic (TFPV) solar cell is needed to enhance the light-trapping capability of the TFPV solar cells and thus improving the solar cell efficiency. Embodiments of the current invention describe chemical formulations and methods for the wet etching of the TCO. The formulations and methods may be optimized to tune the surface texturing of the TCO as desired.

Abstract: Method for monitoring and controlling a combinatorial process are presenting including: receiving a substrate; executing the combinatorial process, wherein the combinatorial process includes an in-line chemical preparation; analyzing the in-line chemical preparation for conformance with a corresponding in-line chemical preparation parameter using an in-line chemical analysis; and if the in-line chemical preparation is out of conformance with the corresponding in-line chemical preparation parameter, adjusting the in-line chemical preparation to conform with the corresponding in-line chemical preparation parameter utilizing a replenishing chemical preparation. In some embodiments, methods further include: performing a post-chemical mechanical planarization (CMP) clean before executing the combinatorial process, wherein the combinatorial process is a pre-clean; and depositing a capping layer after the pre-clean.

Abstract: There is provided a method and system for scheduling a job in a cluster, the cluster comprises multiple computing nodes, and the method comprises: defining rules for constructing virtual sub-clusters of the multiple computing nodes; constructing the multiple nodes in the cluster into multiple virtual sub-clusters based on the rules, wherein one computing node can only be included in one virtual sub-cluster; dispatching a received job to a selected virtual sub-cluster; and scheduling at least one computing node for the dispatched job in the selected virtual sub-cluster. Further, the job is dispatched to the selected virtual sub-cluster based on characteristics of the job and/or characteristics of virtual sub-clusters. The present invention can increase the throughput of scheduling effectively.

Abstract: An electric steering lock for a motorcycle includes a housing, a transmission assembly, a spindle, and a circuit board. The transmission assembly has an actuator, a first gear, a second gear and a sliding block each arranged within the housing in transmissive engagement with each other. The spindle is assembled with the sliding block and acts in the second space. The circuit board is arranged on the bottom of the housing. The primary control chip of the motorcycle controls the circuit board to make the transmission assembly to drive the spindle to move accordingly. The sliding block touches an inner wall of the casing to make it unable to move forwards or backwards any more. The current of the actuator at this time is larger than that in its normal operation. The rotation of the actuator is ceased by the circuit board when a variation in current of the actuator is detected by the circuit board.