Patents by Inventor Zhi WEN

Zhi WEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100223618
    Abstract: There is provided a method and system for scheduling a job in a cluster, the cluster comprises multiple computing nodes, and the method comprises: defining rules for constructing virtual sub-clusters of the multiple computing nodes; constructing the multiple nodes in the cluster into multiple virtual sub-clusters based on the rules, wherein one computing node can only be included in one virtual sub-cluster; dispatching a received job to a selected virtual sub-cluster; and scheduling at least one computing node for the dispatched job in the selected virtual sub-cluster. Further, the job is dispatched to the selected virtual sub-cluster based on characteristics of the job and/or characteristics of virtual sub-clusters. The present invention can increase the throughput of scheduling effectively.
    Type: Application
    Filed: February 26, 2010
    Publication date: September 2, 2010
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: ZHI WEN FU, Zi Ming Hu, Peng Liu, Jie Yang
  • Publication number: 20100212378
    Abstract: An electric steering lock for a motorcycle includes a housing, a transmission assembly, a spindle, and a circuit board. The transmission assembly has an actuator, a first gear, a second gear and a sliding block each arranged within the housing in transmissive engagement with each other. The spindle is assembled with the sliding block and acts in the second space. The circuit board is arranged on the bottom of the housing. The primary control chip of the motorcycle controls the circuit board to make the transmission assembly to drive the spindle to move accordingly. The sliding block touches an inner wall of the casing to make it unable to move forwards or backwards any more. The current of the actuator at this time is larger than that in its normal operation. The rotation of the actuator is ceased by the circuit board when a variation in current of the actuator is detected by the circuit board.
    Type: Application
    Filed: November 17, 2009
    Publication date: August 26, 2010
    Inventors: Pei-Ting Chen, Chong-Guang Chen, Zhi Wen Hou, Wei-Chun Lin, Chun-Yi Sun
  • Patent number: 7782602
    Abstract: A flash memory device includes a bottom shell, a PCB mounted on the bottom shell, a connector interface electrically connecting the PCB, a movable cover covering the PCB and a light-guiding member set on the cover. The PCB includes a LED light. The light-guiding member absorbs the light of the LED light in order to averagely illuminate an area of the cover to be illuminated.
    Type: Grant
    Filed: June 19, 2008
    Date of Patent: August 24, 2010
    Assignee: Hon Hai Precision Ind. Co., Ltd.
    Inventor: Zhi-Wen Zhu
  • Publication number: 20100206020
    Abstract: An electric steering lock for a motorcycle includes a housing, a transmission assembly, a spindle, a set of sensors and a circuit board. The transmission assembly has an actuator, a first gear, a second gear and a sliding block each arranged within the housing in transmissive engagement with each other. The spindle is assembled with the sliding block and acts in the housing. A primary control chip of the motorcycle controls the circuit board to make the transmission assembly to drive the spindle to move accordingly. The circuit board determines that the spindle is locked and reaches a predetermined position if the sliding block presses the front sensor, and the circuit board determined that the spindle is unlocked and reaches a predetermined position if the sliding block presses the rear sensor.
    Type: Application
    Filed: November 17, 2009
    Publication date: August 19, 2010
    Inventors: Pei-Ting Chen, Chong-Guang Chen, Zhi Wen Hou, Wei-Chun Lin, Chun-Yi Sun
  • Publication number: 20100203731
    Abstract: Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.
    Type: Application
    Filed: February 9, 2009
    Publication date: August 12, 2010
    Inventors: Bob Kong, Zhi-Wen Sun, Chi-I Lang, Jinhong Tong, Tony Chiang
  • Patent number: 7704789
    Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.
    Type: Grant
    Filed: February 5, 2007
    Date of Patent: April 27, 2010
    Assignee: Intermolecular, Inc.
    Inventors: Zhi-wen Sun, Nitin Kumar, Jinhong Tong, Chi-I Lang, Tony Chiang
  • Patent number: 7678607
    Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.
    Type: Grant
    Filed: February 5, 2007
    Date of Patent: March 16, 2010
    Assignee: Intermolecular, Inc.
    Inventors: Tony Chiang, Chi-I Lang, Zhi-wen Sun, Jinhong Tong, Nitin Kumar
  • Publication number: 20100055422
    Abstract: Embodiments of the current invention describe a method of plating platinum selectively on a copper film using a self-initiated electroless process. In particular, platinum films are plated onto very thin copper films having a thickness of less than 300 angstroms. The electroless plating solution and the resulting structure are also described. This process has applications in the semiconductor processing of logic devices, memory devices, and photovoltaic devices.
    Type: Application
    Filed: August 28, 2008
    Publication date: March 4, 2010
    Inventors: Bob Kong, Zhi-Wen Sun, Igor Ivanov, Jinhong Tong
  • Publication number: 20090291275
    Abstract: Methods for improving selective deposition of a capping layer on a patterned substrate are presented, the method including: receiving the patterned substrate, the patterned substrate including a conductive region and a dielectric region; forming a molecular masking layer (MML) on the dielectric region; preparing an electroless (ELESS) plating bath, where the ELESS plating bath includes: a cobalt (Co) ion source: a complexing agent: a buffer: a tungsten (W) ion source: and a reducing agent; and reacting the patterned substrate with the ELESS plating bath for an ELESS period at an ELESS temperature and an ELESS pH so that the capping layer is selectively formed on the conductive region. In some embodiments, methods further include a pH adjuster for adjusting the ELESS pH to a range of approximately 9.0 pH to 9.2 pH. In some embodiments, the pH adjuster is tetramethylammonium hydroxide (TMAH). In some embodiments, the MML is hydrophilic.
    Type: Application
    Filed: May 22, 2009
    Publication date: November 26, 2009
    Inventors: Jinhong Tong, Zhi-Wen Sun, Chi-I Lang, Nitin Kumar, Bob Kong, Zachary Fresco
  • Publication number: 20090185355
    Abstract: A flash memory device, includes a case (1) having a chamber and an opening (1120) at one end thereof. A memory module (2) is received in the chamber and has a plug (22) formed at one end thereof. A pole (3) has a first portion (30) received in the chamber to drive the plug of the memory module moving in or out of the opening, and a second portion (31) opposite to the first portion. A revolver mechanism (5) has a main body (51) which is rotatable, and a spindle (52) assembled to the main body and rotatablely coupled to the second portion to drive the pole moving along a linear direction.
    Type: Application
    Filed: January 22, 2009
    Publication date: July 23, 2009
    Inventors: Zhi-Wen Zhu, Jin-Kui Hu, Xue-Yuan Xiao
  • Publication number: 20090163383
    Abstract: Method for monitoring and controlling a combinatorial process are presenting including: receiving a substrate; executing the combinatorial process, wherein the combinatorial process includes an in-line chemical preparation; analyzing the in-line chemical preparation for conformance with a corresponding in-line chemical preparation parameter using an in-line chemical analysis; and if the in-line chemical preparation is out of conformance with the corresponding in-line chemical preparation parameter, adjusting the in-line chemical preparation to conform with the corresponding in-line chemical preparation parameter utilizing a replenishing chemical preparation. In some embodiments, methods further include: performing a post-chemical mechanical planarization (CMP) clean before executing the combinatorial process, wherein the combinatorial process is a pre-clean; and depositing a capping layer after the pre-clean.
    Type: Application
    Filed: March 3, 2008
    Publication date: June 25, 2009
    Inventors: Zhi-Wen Sun, Tony Chiang
  • Publication number: 20090147462
    Abstract: A device (100) for enclosing a flash memory module includes a first shell (1) having a groove (13), and an outer wall (14) covering the groove and having an reduced opening (142) communicating with the groove. An attachment mechanism (4) coupled to the first shell comprises a retaining member (42) having a base portion (421) retained in the groove and an engaging portion (422) extending from the base portion and through the opening outwardly, and a ring (41) coupled to the engaging portion of the retaining member. The base portion is abutted against by the outer wall.
    Type: Application
    Filed: December 11, 2008
    Publication date: June 11, 2009
    Inventors: Zhi-Wen Zhu, Jin-Kui Hu
  • Publication number: 20090120799
    Abstract: Embodiments of the invention teach a method for depositing a copper seed layer to a substrate surface, generally to a barrier layer. The method includes placing the substrate surface into a copper solution, wherein the copper solution includes complexed copper ions. A current or bias is applied across the substrate surface and the complexed copper ions are reduced to deposit the copper seed layer onto the barrier layer.
    Type: Application
    Filed: December 11, 2008
    Publication date: May 14, 2009
    Inventors: Zhi-Wen Sun, Renren He, You Wang, Michael X. Yang
  • Publication number: 20090124104
    Abstract: A flash memory device (8) includes a memory module (2), a screw (3), a gear (4) and a case (1). The memory module (2) has a plug (22) formed at one end thereof. The screw (3) has a first end (30) and a second end (31) opposite to the first end (30). The first end (30) is mounted on the memory module (2). The gear (4) is positioned on the screw (3) and is rotatable relative to the screw (3). The case (1) includes a receiving cavity for receiving the memory module (2), and a first inner case (10) with a first rack (1002) engaging with one side of the gear (4). The first rack (1002) extends along a length direction of the case (1). The memory module (2) has a second rack (2011) engaging with another side of the gear (4). The second rack (2011) extends along the length direction too. The screw (3) is located between the first rack (1002) and the second rack (2011).
    Type: Application
    Filed: November 12, 2008
    Publication date: May 14, 2009
    Inventors: Zhi-Wen Zhu, Jin-Kui Hu
  • Patent number: 7504335
    Abstract: Generally, the process includes depositing a barrier layer and seed layer on a feature formed in a dielectric layer, performing a grafting process, initiating a copper layer and then filing the feature by use of a bulk copper fill process. Copper features formed according to aspects described herein have desirable adhesion properties to a barrier and seed layers formed on a semiconductor substrate and demonstrate enhanced electromigration and stress migration results in the fabricated devices formed on the substrate.
    Type: Grant
    Filed: April 13, 2006
    Date of Patent: March 17, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Michael Yang, Aron Rosenfeld, Hooman Hafezi, Zhi-Wen Sun, John Dukovic
  • Patent number: 7473112
    Abstract: A flash memory device includes a main body, a cover and an elastic member connecting the main body and the cover. The main body includes a hinge protrusion formed thereon. The cover includes a tail and a pair of parallel plates facing each other and spaced by an interval corresponding to a thickness of the main body. At least one plate defines an opening for receiving the hinge protrusion so that the cover is rotatable with respect to the main body. The elastic member is fastened to the cover to abut against the protrusion, or fastened to the main body to abut against the cover, when the cover is rotatable relative to the main body.
    Type: Grant
    Filed: July 9, 2007
    Date of Patent: January 6, 2009
    Assignee: Hon Hai Precision Ind. Co., Ltd.
    Inventors: Zhi-Wen Zhu, Guo-Hua Zhang, Jin-Kui Hu, De-Wen Xia
  • Publication number: 20080316697
    Abstract: A flash memory device includes a bottom shell, a PCB mounted on the bottom shell, a connector interface electrically connecting the PCB, a movable cover covering the PCB and a light-guiding member set on the cover. The PCB includes a LED light. The light-guiding member absorbs the light of the LED light in order to averagely illuminate an area of the cover to be illuminated.
    Type: Application
    Filed: June 19, 2008
    Publication date: December 25, 2008
    Inventor: Zhi-Wen Zhu
  • Publication number: 20080185567
    Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.
    Type: Application
    Filed: February 5, 2007
    Publication date: August 7, 2008
    Inventors: Nitin Kumar, Chi-I Lang, Tony Chiang, Zhi-wen Sun, Jihhong Tong
  • Publication number: 20080185573
    Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.
    Type: Application
    Filed: February 5, 2007
    Publication date: August 7, 2008
    Inventors: Zhi-wen Sun, Nitin Kumar, Jinhong Tong, Chi-l Lang, Tony Chiang
  • Publication number: 20080185572
    Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.
    Type: Application
    Filed: February 5, 2007
    Publication date: August 7, 2008
    Inventors: Tony Chiang, Chi-I Lang, Zhi-wen Sun, Jinhong Tong, Nitin Kumar