Abstract: Bluetooth Address Tracking (BAT) is an allowlist-based side channel attack to track Bluetooth devices, by either passively sniffing the Bluetooth packets, or actively replaying the sniffed ones. Securing addresses of Bluetooth Low Energy (BLE) is described, which uses an interval unpredictable, central and peripheral synchronized random media access control (MAC) address generation scheme to defend against passive BAT attacks, and uses a current timestamp to derive random MAC addresses to defeat active BAT attacks, such that attackers can no longer be able to replay them.

Abstract: Electrical Phase Detection Auto Focus. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array disposed in a semiconductor material. Each pixel includes a plurality of photodiodes configured to receive incoming light through an illuminated surface of the semiconductor material. The plurality of pixels includes at least one autofocusing phase detection (PDAF) pixel having: a first subpixel without a light shielding, and a second subpixel without the light shielding. Autofocusing of the image sensor is at least in part determined based on different electrical outputs of the first subpixel and the second sub pixels.

Abstract: A substation inspection device includes a rack, an anti-vibration mechanism, a camera apparatus and a lock-stop apparatus. The anti-vibration mechanism is mounted on the rack. The camera apparatus includes a first mounting seat and a camera assembly. The first mounting seat is mounted on the rack through the anti-vibration mechanism. The camera assembly is mounted on the first mounting seat. The lock-stop apparatus is mounted on the rack and is configured to fix the camera apparatus.

Abstract: A substation inspection device includes a rack, an anti-vibration mechanism, a camera apparatus and a lock-stop apparatus. The anti-vibration mechanism is mounted on the rack. The camera apparatus includes a first mounting seat and a camera assembly. The first mounting seat is mounted on the rack through the anti-vibration mechanism. The camera assembly is mounted on the first mounting seat. The lock-stop apparatus is mounted on the rack and is configured to fix the camera apparatus.

Abstract: Provided is a wide angle application high reflective mirror having a reflection band partially overlapping in a wavelength range of 800-4000 nm. The mirror comprises a film system in which a plurality of high refractive index film layers and a plurality of low refractive index film layers that are alternately stacked, and the material of the high refractive index film layer is one of SiH, SiOxHy, or SiOxNy, or a mixture thereof. The highly reflective mirror can achieve a reflectance greater than 99% with an incident angle ranging from 0 to 60 degrees over a large angle range.

Abstract: Methods for detecting 3D model clones in computer games. in accordance with the methods. 3D models are extracted from game files. A value-insensitive normalization algorithm is applied to the extracted 3D models, which are then indexed by using a computed hash value. By comparing the 3D model indexes. cloned static 3D models are identified. If they are animated-meshes models. skeleton and motion track information is used to further narrow down like 3D models and a pair-wise comparison is used to detect the animated cloned models.

Abstract: A dark-current-inhibiting image sensor includes a semiconductor substrate, a thin and a thin junction. The semiconductor substrate includes a front surface, a back surface opposite the front surface, a photodiode, and a concave surface between the front surface and the back surface. The concave surface extends from the back surface toward the front surface, and defines a trench that surrounds the photodiode in a cross-sectional plane parallel to the back surface. The thin junction extends from the concave surface into the semiconductor substrate, and is a region of the semiconductor substrate. The semiconductor substrate includes a first substrate region, located between the thin junction and the photodiode, that has a first conductive type. The photodiode and the thin junction have a second conductive type opposite the first conductive type.

Abstract: A pixel circuit includes a photodiode configured to photogenerate image charge in response to incident light. A floating diffusion is coupled to receive the image charge from the photodiode. A transfer transistor is coupled between the photodiode and the floating diffusion. The transfer transistor is configured to transfer the image charge from the photodiode to the floating diffusion. A reset transistor is coupled between a reset voltage and the floating diffusion. A lateral overflow integration capacitor (LOFIC) network is coupled between the reset transistor and a bias voltage source. The LOFIC network includes a main LOFIC coupled between the reset transistor and the bias voltage source, and a plurality of subordinate capacitor-switch pairs, each including a subordinate LOFIC and a switch transistor coupled to the subordinate LOFIC. Each of the plurality of subordinate capacitor-switch pairs is coupled between the reset transistor and the bias voltage source.

Abstract: A pixel array includes 2×2 groupings of photodiodes to generate image charge in response to incident light directed through a back side of the semiconductor layer. A Quad Bayer filter is disposed over the back side of the semiconductor layer over the 2×2 groupings of photodiodes. Each color filter of the Quad Bayer CFA is disposed over a respective one of the plurality of 2×2 groupings of photodiodes. Trench balance structures are disposed in the semiconductor layer. Each of the trench balance structures is disposed in the semiconductor layer between one of the photodiodes and a respective one of the red color filters of the Quad Bayer filter. None of the trench balance structures are disposed between any of the photodiodes and respective green color filters or blue color filters of the Quad Bayer filter.

Abstract: An image sensor comprises an image sensor chip comprising a semiconductor substrate having a top surface and a plurality of microlenses disposed on the top surface; a cover glass having a first side in contact with air and a second side opposite to the first side; and a multi-layer structure disposed between the plurality of microlenses and the cover glass, which comprises: a bottom layer directly in contact with the plurality of microlenses, where the refractive index of the bottom layer is lower than the refractive index of the plurality of microlenses, and a top layer directly in contact with the second side of the cover glass, where the top layer is an optical glue made for bonding two optical elements.

Abstract: A packaging box, a battery, and an electrical device are disclosed. The packaging box includes a box body, a ferrule, and a sleeve. An accommodation cavity, a first opening, and a second opening are created in the box body. Both the first opening and the second opening communicate with the accommodation cavity. The sleeve includes a first cap, a second cap, and a cylinder. The first cap and the second cap are connected to two ends of the cylinder respectively. The first cap and the second cap protrude beyond the ferrule. The cylinder and the second cap enter the accommodation cavity from the first opening and are snap-fastened in the accommodation cavity. The first cap protrudes beyond the second opening and abuts on the outer surface of the box body.

Abstract: A computer-implemented method for defending, preventing, and/or mitigating short message service (SMS) based activities is provided. The method includes monitoring, by a security component in a radio interface layer (RIL) of a computing device configured to access a radio network, data related to SMS interactions over the radio network. The method also includes, based on the monitoring, detecting a potential activity associated with an SMS interaction. The method additionally includes providing an indication of the potential activity.

Abstract: A screw includes a head and a threaded rod connected to the head. An annular protrusion is provided on a surface of the head located on a threaded rod side. When two connecting members are connected by the screw, the annular protrusion of the screw abuts against one of the two connecting members to form a tightly abutting structure to achieve sealing.

Abstract: A riveting assembly, a battery, electrical equipment, and an assembling method and equipment of the riveting assembly are described. The riveting assembly includes a first member, a second member and a riveting piece; the first member has a first connecting portion; the second member has a first hollow portion, and the second member has a first wall and a second wall opposed to each other; a rivet body of the riveting piece is configured to sequentially pass through the first wall, the first hollow portion, the second wall and the first connecting portion; in an axial direction of the rivet body, the rivet body has a first weak portion and a first limiting portion which are disposed at intervals, and the first weak portion protrudes in a radial direction of the rivet body when the rivet body is axially stressed to form a second limiting portion.

Abstract: A pixel circuit includes a photodiode configured to photogenerate image charge in response to incident light. A floating diffusion is coupled to receive the image charge from the photodiode. A transfer transistor is coupled between the photodiode and the floating diffusion. The transfer transistor is configured to transfer the image charge from the photodiode to the floating diffusion. A reset transistor is coupled between a reset voltage and the floating diffusion. A lateral overflow integration capacitor (LOFIC) network is coupled between the reset transistor and a bias voltage source. The LOFIC network includes a main LOFIC coupled between the reset transistor and the bias voltage source, and a plurality of subordinate capacitor-switch pairs, each including a subordinate LOFIC and a switch transistor coupled to the subordinate LOFIC. Each of the plurality of subordinate capacitor-switch pairs is coupled between the reset transistor and the bias voltage source.

Abstract: Electrical Phase Detection Auto Focus. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array disposed in a semiconductor material. Each pixel includes a plurality of photodiodes configured to receive incoming light through an illuminated surface of the semiconductor material. The plurality of pixels includes at least one autofocusing phase detection (PDAF) pixel having: a first subpixel without a light shielding, and a second subpixel without the light shielding. Autofocusing of the image sensor is at least in part determined based on different electrical outputs of the first subpixel and the second sub pixels.

Abstract: A light-trapping image sensor includes a pixel array and a lens array. The pixel array is formed in and on a semiconductor substrate and including photosensitive pixels each including a reflective material forming a cavity around a portion of semiconductor material to at least partly trap light that has entered the cavity. The cavity has a ceiling at a light-receiving surface of the semiconductor substrate, and the ceiling forms an aperture for receiving the light into the cavity. The lens array is disposed on the pixel array. Each lens of the lens array is aligned to the aperture of a respective cavity to focus the light into the cavity through the aperture.