Patents by Inventor Zhiqiang Lin

Zhiqiang Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10964744
    Abstract: Light control for improved near infrared sensitivity and channel separation for an image sensor. In one embodiment, an image sensor includes: a plurality of photodiodes arranged in rows and columns of a pixel array; and a light filter layer having a plurality of light filters configured over the plurality of photodiodes. The light filter layer has a first side facing the plurality of photodiodes and a second side facing away from the first side. The image sensor also includes a color filter layer having a plurality of color filters configured over the plurality of photodiodes. The color filter layer has a first surface facing the second side of the light filter layer and a second surface facing away from the first layer. Individual micro-lenses are configured to direct incoming light through corresponding light filter and color filter onto the respective photodiode.
    Type: Grant
    Filed: September 13, 2019
    Date of Patent: March 30, 2021
    Assignee: OmniVision Technologies, Inc.
    Inventors: Cheng Zhao, Chen-Wei Lu, Cunyu Yang, Ping-Hsu Chen, Zhiqiang Lin, Chengming Liu
  • Publication number: 20210091130
    Abstract: An image sensor includes a two-dimensional photodiode-array formed in a semiconductor substrate, a first waveguide, and a first color filter. The first waveguide is aligned to a first photodiode of the photodiode-array, located above a top substrate surface of the semiconductor substrate. A first core of the first waveguide has a first core width that is less than a pitch of the photodiode-array in a first direction and a second direction corresponding to respective orthogonal dimensions of the photodiode-array. The first color filter is on a top waveguide surface of the first waveguide and has a first non-uniform thickness above the first core. The first waveguide is between the top substrate surface and the first color filter.
    Type: Application
    Filed: September 19, 2019
    Publication date: March 25, 2021
    Inventors: Alireza BONAKDAR, Zhiqiang LIN
  • Publication number: 20210082990
    Abstract: Light control for improved near infrared sensitivity and channel separation for an image sensor. In one embodiment, an image sensor includes: a plurality of photodiodes arranged in rows and columns of a pixel array; and a light filter layer having a plurality of light filters configured over the plurality of photodiodes. The light filter layer has a first side facing the plurality of photodiodes and a second side facing away from the first side. The image sensor also includes a color filter layer having a plurality of color filters configured over the plurality of photodiodes. The color filter layer has a first surface facing the second side of the light filter layer and a second surface facing away from the first layer. Individual micro-lenses are configured to direct incoming light through corresponding light filter and color filter onto the respective photodiode.
    Type: Application
    Filed: September 13, 2019
    Publication date: March 18, 2021
    Inventors: Cheng Zhao, Chen-Wei Lu, Cunyu Yang, Ping-Hsu Chen, Zhiqiang Lin, Chengming Liu
  • Publication number: 20210074751
    Abstract: An image sensor includes a substrate material, an array of the color filters, an array of waveguides and spacers. The substrate material includes a plurality of photodiodes disposed therein. The array of color filters are disposed over the substrate material. The array of waveguides are disposed over the substrate material. The buffer layer is disposed between the substrate material and the arrays of color filters and waveguides. The spacers are disposed between the color filters in the array of color filters. The spacers are disposed between the waveguides in the array of waveguides. Incident light is adapted to be confined between the spacers. The incident light is adapted to be directed through one of the waveguides and through one of the color filters prior to being directed through the buffer layer into one of the photodiodes in the substrate material.
    Type: Application
    Filed: September 6, 2019
    Publication date: March 11, 2021
    Inventors: Alireza Bonakdar, Zhiqiang Lin
  • Publication number: 20210009646
    Abstract: Provided is a polynucleotide, including a cis-regulatory element and a nucleotide sequence encoding a vestigial like 4 protein, wherein the cis-regulatory element includes an uncoupling protein 1 enhancer and an uncoupling protein 1 promoter. Also provided is a viral vector including said polynucleotide. Also provided is a method of transfecting a cell or a subject with said polynucleotide or said viral vector.
    Type: Application
    Filed: July 10, 2020
    Publication date: January 14, 2021
    Applicant: MASONIC MEDICAL RESEARCH INSTITUTE
    Inventor: Zhiqiang Lin
  • Patent number: 10761385
    Abstract: A liquid crystal on silicon (LCOS) panel comprises: a silicon substrate having silicon circuit within the silicon substrate; a plurality of metal electrodes disposed on the silicon substrate, where the plurality of metal electrodes are periodically formed on the silicon substrate; a dielectric material disposed in and filling gaps between adjacent metal electrodes; and an oxide layer disposed on the plurality of metal electrodes and the dielectric material in the gaps between adjacent metal electrodes; where the refractive index of the dielectric material is higher than the refractive index of the oxide layer.
    Type: Grant
    Filed: December 22, 2017
    Date of Patent: September 1, 2020
    Assignee: OmniVision Technologies, Inc.
    Inventors: Ming Zhang, Libo Weng, Cheng Zhao, Yin Qian, Chia-Chun Miao, Zhiqiang Lin, Dyson H. Tai
  • Publication number: 20200235158
    Abstract: A sensor includes a photodiode disposed in a semiconductor material to receive light and convert the light into charge, and a first floating diffusion coupled to the photodiode to receive the charge. A second floating diffusion is coupled to the photodiode to receive the charge, and a first transfer transistor is coupled to transfer the charge from the photodiode into the first floating diffusion. A second transfer transistor is coupled to transfer the charge from the photodiode into the second floating diffusion, and an inductor is coupled between a first gate terminal of the first transfer transistor and a second gate terminal of the second transfer transistor. The inductor, the first gate terminal, and the second gate terminal form a resonant circuit.
    Type: Application
    Filed: January 23, 2019
    Publication date: July 23, 2020
    Inventors: Xianmin Yi, Jingming Yao, Philip Cizdziel, Eric Webster, Duli Mao, Zhiqiang Lin, Jens Landgraf, Keiji Mabuchi, Kevin Johnson, Sohei Manabe, Dyson H. Tai, Lindsay Grant, Boyd Fowler
  • Patent number: 10665626
    Abstract: An image sensor comprises a first photodiode and a second photodiode having a smaller full-well capacitance than the first photodiode, wherein the second photodiode is adjacent to the first photodiode; a first micro-lens is disposed above the first photodiode and on an illuminated side of the image sensor; a second micro-lens is disposed above the second photodiode and on the illuminated side of the image sensor; and a coating layer disposed on both the first and second micro-lens, wherein the coating layer forms a flat top surface on the second micro-lens and a conformal coating layer on the first micro-lens.
    Type: Grant
    Filed: April 25, 2018
    Date of Patent: May 26, 2020
    Inventors: Cheng Zhao, Chen-Wei Lu, Zhiqiang Lin, Dyson Hsin-Chih Tai
  • Publication number: 20190333953
    Abstract: An image sensor comprises a first photodiode and a second photodiode having a smaller full-well capacitance than the first photodiode, wherein the second photodiode is adjacent to the first photodiode; a first micro-lens is disposed above the first photodiode and on an illuminated side of the image sensor; a second micro-lens is disposed above the second photodiode and on the illuminated side of the image sensor; and a coating layer disposed on both the first and second micro-lens, wherein the coating layer forms a flat top surface on the second micro-lens and a conformal coating layer on the first micro-lens.
    Type: Application
    Filed: April 25, 2018
    Publication date: October 31, 2019
    Applicant: OmniVision Technologies, Inc.
    Inventors: Cheng Zhao, Chen-Wei Lu, Zhiqiang Lin, Dyson Hsin-Chih Tai
  • Publication number: 20190196284
    Abstract: A liquid crystal on silicon (LCOS) panel comprises: a silicon substrate having silicon circuit within the silicon substrate; a plurality of metal electrodes disposed on the silicon substrate, where the plurality of metal electrodes are periodically formed on the silicon substrate; a dielectric material disposed in and filling gaps between adjacent metal electrodes; and an oxide layer disposed on the plurality of metal electrodes and the dielectric material in the gaps between adjacent metal electrodes; where the refractive index of the dielectric material is higher than the refractive index of the oxide layer.
    Type: Application
    Filed: December 22, 2017
    Publication date: June 27, 2019
    Applicant: OmniVision Technologies, Inc.
    Inventors: Ming Zhang, Libo Weng, Cheng Zhao, Yin Qian, Chia-Chun Miao, Zhiqiang Lin, Dyson H. Tai
  • Publication number: 20190175690
    Abstract: The present invention features compositions comprising a modified RNA encoding a Yes-associated protein (YAP) polypeptide and methods of using such compositions for cardiac repair. In particular embodiments, a modified RNA encoding a YAP polypeptide is administered in combination with an agent that reduces YAP degradation, such as a small molecule E64d.
    Type: Application
    Filed: August 16, 2017
    Publication date: June 13, 2019
    Applicant: CHILDREN'S MEDICAL CENTER CORPORATION
    Inventors: WILLIAM PU, ZHIQIANG LIN
  • Patent number: 10224364
    Abstract: An image sensor comprises a semiconductor material having an illuminated surface and a non-illuminated surface; a photodiode formed in the semiconductor material extending from the illuminated surface to receive an incident light through the illuminated surface, wherein the received incident light generates charges in the photodiode; a transfer gate electrically coupled to the photodiode to transfer the generated charges from the photodiode in response to a transfer signal; a floating diffusion electrically coupled to the transfer gate to receive the transferred charges from the photodiode; and a near infrared (NIR) quantum efficiency (QE) and modulation transfer function(MTF) enhancement structure.
    Type: Grant
    Filed: August 1, 2017
    Date of Patent: March 5, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Cheng Zhao, Cunyu Yang, Chen-Wei Lu, Zhiqiang Lin
  • Publication number: 20190019832
    Abstract: An image sensor comprises a semiconductor material having an illuminated surface and a non-illuminated surface; a photodiode formed in the semiconductor material extending from the illuminated surface to receive an incident light through the illuminated surface, wherein the received incident light generates charges in the photodiode; a transfer gate electrically coupled to the photodiode to transfer the generated charges from the photodiode in response to a transfer signal; a floating diffusion electrically coupled to the transfer gate to receive the transferred charges from the photodiode; and a near infrared (NIR) quantum efficiency (QE) and modulation transfer function(MTF) enhancement structure.
    Type: Application
    Filed: August 1, 2017
    Publication date: January 17, 2019
    Inventors: Cheng Zhao, Cunyu Yang, Chen-Wei Lu, Zhiqiang Lin
  • Patent number: 10044960
    Abstract: An image sensor for detecting light-emitting diode (LED) without flickering includes a pixel array with pixels. Each pixel including subpixels including a first and a second subpixel, dual floating diffusion (DFD) transistor, and a capacitor coupled to the DFD transistor. First subpixel includes a first photosensitive element to acquire a first image charge, and a first transfer gate transistor to selectively transfer the first image charge from the first photosensitive element to a first floating diffusion (FD) node. Second subpixel includes a second photosensitive element to acquire a second image charge, and a second transfer gate transistor to selectively transfer the second image charge from the second photosensitive element to a second FD node. DFD transistor coupled to the first and the second FD nodes. Other embodiments are also described.
    Type: Grant
    Filed: May 25, 2016
    Date of Patent: August 7, 2018
    Assignee: OmniVision Technologies, Inc.
    Inventors: Duli Mao, Trygve Willassen, Johannes Solhusvik, Keiji Mabuchi, Gang Chen, Sohei Manabe, Dyson H. Tai, Bill Phan, Oray Orkun Cellek, Zhiqiang Lin, Siguang Ma, Dajiang Yang, Boyd Albert Fowler
  • Patent number: 9994391
    Abstract: The present disclosure provides a material feeding bag which comprises an inner bag. The inner bag has: an inner bag upper port portion, an inner bag main receiving portion and an inner bag lower port portion. The inner bag upper port portion has an upper port; the inner bag main receiving portion is connected to a lower end of the inner bag upper port portion along an axial direction; the inner bag lower port portion is connected to a lower end of the inner bag main receiving portion along the axial direction and has a lower port for controllable communication with an external hopper entrance. It doe not need to shear the material feeding bag by a scissors when materials is fed, so that it avoids generation of metal debris, and the mating and feeding material operation is fast and simple, and the working environment for an operator is improved.
    Type: Grant
    Filed: March 13, 2017
    Date of Patent: June 12, 2018
    Assignee: CONTEMPORARY AMPEREX TECHNOLOGY CO., LIMITED
    Inventors: Zhongxin Zhou, Wutang Zhang, Taosheng Zhu, Jian Si, Zhiqiang Lin, Xie Wang
  • Patent number: 9977904
    Abstract: Disclosed are systems and methods for performing automatic, large-scale analysis mobile applications to determine and analyze application vulnerability. The disclosed systems and methods include identifying potentially vulnerable applications, identifying the application entry points that lead to vulnerable behavior, and generating smart input for text fields. Thus, a fully automated framework is implemented to run in parallel on multiple emulators, while collecting vital information.
    Type: Grant
    Filed: February 24, 2015
    Date of Patent: May 22, 2018
    Assignee: Board of Regents, The University of Texas System
    Inventors: Latifur Khan, Zhiqiang Lin, Bhavani Thuraisingham, Justin Sahs, David Sounthiraraj, Garrett Greenwood
  • Publication number: 20180098008
    Abstract: Apparatuses and methods for image sensors with pixels that reduce or eliminate flicker induced by high intensity illumination are disclosed. An example image sensor may include a photodiode, a transfer gate, an anti-blooming gate, and first and second source follower transistors. The photodiode may capture light and generate charge in response, and the photodiode may have a charge capacity. The transfer gate may selectively transfer charge to a first floating diffusion, and the anti-blooming gate may selectively transfer excess charge to a second floating diffusion when the generated charge is greater than the photodiode charge capacity.
    Type: Application
    Filed: October 4, 2016
    Publication date: April 5, 2018
    Inventors: Duli Mao, Trygve Willassen, Johannes Solhusvik, Keiji Mabuchi, Gang Chen, Sohei Manabe, Dyson H. Tai, Bill Phan, Oray Orkun Cellek, Zhiqiang Lin
  • Patent number: 9936153
    Abstract: Apparatuses and methods for image sensors with pixels that reduce or eliminate flicker induced by high intensity illumination are disclosed. An example image sensor may include a photodiode, a transfer gate, an anti-blooming gate, and first and second source follower transistors. The photodiode may capture light and generate charge in response, and the photodiode may have a charge capacity. The transfer gate may selectively transfer charge to a first floating diffusion, and the anti-blooming gate may selectively transfer excess charge to a second floating diffusion when the generated charge is greater than the photodiode charge capacity.
    Type: Grant
    Filed: October 4, 2016
    Date of Patent: April 3, 2018
    Assignee: OmniVision Technologies, Inc.
    Inventors: Duli Mao, Trygve Willassen, Johannes Solhusvik, Keiji Mabuchi, Gang Chen, Sohei Manabe, Dyson H. Tai, Bill Phan, Oray Orkun Cellek, Zhiqiang Lin
  • Publication number: 20170347047
    Abstract: An image sensor for detecting light-emitting diode (LED) without flickering includes a pixel array with pixels. Each pixel including subpixels including a first and a second subpixel, dual floating diffusion (DFD) transistor, and a capacitor coupled to the DFD transistor. First subpixel includes a first photosensitive element to acquire a first image charge, and a first transfer gate transistor to selectively transfer the first image charge from the first photosensitive element to a first floating diffusion (FD) node. Second subpixel includes a second photosensitive element to acquire a second image charge, and a second transfer gate transistor to selectively transfer the second image charge from the second photosensitive element to a second FD node. DFD transistor coupled to the first and the second FD nodes. Other embodiments are also described.
    Type: Application
    Filed: May 25, 2016
    Publication date: November 30, 2017
    Inventors: Duli Mao, Trygve Willassen, Johannes Solhusvik, Keiji Mabuchi, Gang Chen, Sohei Manabe, Dyson H. Tai, Bill Phan, Oray Orkun Cellek, Zhiqiang Lin, Siguang Ma, Dajiang Yang, Boyd Albert Fowler
  • Patent number: 9818791
    Abstract: A stacked image sensor includes a first plurality of photodiodes, including a first photodiode and a second photodiode, disposed in a first semiconductor material. A thickness of the first semiconductor material proximate to the first photodiode is less than the thickness of the first semiconductor material proximate to the second photodiode. A second plurality of photodiodes is disposed in a second semiconductor material. The second plurality of photodiodes is optically aligned with the first plurality of photodiodes. An interconnect layer is disposed between the first semiconductor material and the second semiconductor material. The interconnect layer includes an optical shield disposed between the second photodiode and a third photodiode included in the second plurality of photodiodes. The optical shield prevents a first portion of image light from reaching the third photodiode.
    Type: Grant
    Filed: October 4, 2016
    Date of Patent: November 14, 2017
    Assignee: OmniVision Technologies, Inc.
    Inventors: Duli Mao, Zhiqiang Lin, Keiji Mabuchi, Gang Chen, Dyson H. Tai, Bill Phan, Oray Orkun Cellek, Dajiang Yang