Abstract: Methods of forming microelectronic devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include selectively depositing a first self-assembled monolayer (SAM) on the bottom of the gap; forming a barrier layer on the dielectric layer; selectively depositing a second self-assembled monolayer (SAM) on the barrier layer and on the bottom of the gap; treating the microelectronic device with a plasma to remove a first portion of the second self-assembled monolayer (SAM); selectively depositing a metal liner on the barrier layer on the sidewall; removing a second portion of the second self-assembled monolayer (SAM); and performing a gap fill process on the metal liner.

Abstract: Methods for depositing ultra-thin films are disclosed. Some embodiments of the disclosure utilize ultra-thin films as barrier layers, liner layers, or nucleation layers to decrease interconnect resistance. Some embodiments advantageously provide continuous films with thicknesses of less than or equal to about 20 ?. Some embodiments advantageously provide films with decreased roughness.

Abstract: The present disclosure provides a satellite anomaly detection method and system for an adversarial network auto-encoder. The method includes: obtaining a variational auto-encoder and a generative adversarial network; adding the generative adversarial network to the variational auto-encoder, and determining an optimized variational auto-encoder; obtaining to-be-detected satellite telemetry data; and determining a current operating status of a satellite based on the to-be-detected satellite telemetry data by using the optimized variational auto-encoder, where the current operating status includes a normal operating state or an abnormal operating state. The satellite anomaly detection method and system for an adversarial network according to the present disclosure solve the low accuracy problem of automatic satellite anomaly detection in the prior art.

Abstract: The present disclosure relates to compositions and methods for treating cancer. For example, a modified cell may include a polynucleotide comprising an NFAT promoter, a nucleotide sequence encoding therapeutic agent, and a nucleotide sequence encoding a VHL-interaction domain of HIF1?, wherein the therapeutic agent comprises, for example, IL-12, IL-6, and/or IFN?.

Abstract: A method of selectively filling a via with a simultaneous liner deposition in a semiconductor structure includes forming a passivation layer selectively on an exposed surface of a conductive layer within a via formed in a dielectric layer formed over the conductive layer, forming a barrier layer selectively on inner sidewalls of the via and a trench formed in the dielectric layer, selectively filling the via with a first conductive material at least partially and simultaneously depositing the first conductive material on the barrier layer on the inner sidewalls of the via and the trench, to form a liner on the inner sidewalls of the via and the trench, and filling the remaining of the via and the trench with a second conductive material.

Abstract: A method and system are provided for processing natural language user queries for commanding a user interface to perform functions. Individual user queries are classified in accordance with the types of functions and a plurality of user queries may be related to define a particular command. To assist with classification, a query type for each user query is determined where the query type is one of a functional query requesting a particular new command to perform a particular type of function, an entity query relating to an entity associated with the particular new command having the particular type of function and a clarification query responding to a clarification question posed to clarify a prior user query having the particular type of function. Functional queries may be processed using a plurality of natural language processing techniques and scores from each technique combined to determine which type of function is commanded.

Abstract: Embodiments of the disclosure relate to methods for forming electrical interconnects. Additional embodiments provide methods of forming and treating barrier and liner layers to improve film and material properties. In some embodiments, the resulting composite layers provide improved resistivity, decrease void formation and improve device reliability.

Abstract: A semiconductor structure includes a first level comprising a metal layer within a first dielectric layer formed on a substrate, a second level formed on the first level, the second level comprising an interconnect within a second dielectric layer and a barrier layer formed around the interconnect, and a metal capping layer disposed at an interface between the metal layer and the interconnect, wherein the metal capping layer comprises tungsten (W) and has a thickness of between 20 ? and 40 ?.

Abstract: Methods to deposit a metal cap for an interconnect are disclosed. In embodiments, a method comprises contacting the substrate with an alkyl halide and a ruthenium metal precursor to form a metal cap for an interconnect.

Abstract: Embodiments of the present disclosure are related to improved methods for forming an interconnect structure in a substrate. In one implementation, the method includes forming a barrier layer on exposed surfaces of a feature in a dielectric layer, forming a liner layer on the barrier layer, forming a seed layer on the liner layer, forming a metal fill on the seed layer by a metal fill process and overburdening the feature using an electroplating process, performing a planarization process to expose a top surface of the dielectric layer, and selectively forming a cobalt-aluminum alloy cap layer on the barrier layer, the liner layer, the seed layer, and the metal fill by exposing the substrate to a cobalt-containing precursor and an aluminum-containing precursor.

Abstract: A method for forming a metal liner layer for an interconnect uses a multi-metal deposition process to produce a reduced thickness liner. The back-end-of-the-line packaging process may include forming a metal liner layer by depositing a ruthenium layer with a first thickness of approximately 5 angstroms or less and depositing a first cobalt layer with a second thickness of approximately 20 angstroms or less. In some embodiments, the ruthenium layer may be deposited on a previously formed barrier layer and then undergoes a treatment process before depositing the first cobalt layer. In some embodiments, the first cobalt layer may be deposited on the ruthenium layer or the ruthenium layer maybe deposited on the first cobalt layer. In some embodiments, the ruthenium layer is deposited on the first cobalt layer and a second cobalt layer is deposited on the ruthenium layer.

Abstract: A hydro-photovoltaic complementary operation chart application method for a clean energy base includes: divide a hydro-photovoltaic complementary operation chart into two sub-operation charts by runoff probability and critical probability; predict runoff and predicted photovoltaic output during the operation cycle, select the sub-operation chart by the runoff probability, determine hydropower output of a reservoir in the current month according to water level of the reservoir at the beginning of the current month and the operation area, and obtain the water level of the reservoir at the end of the current month through the runoff calculation; obtain long-term hydropower output process and reservoir level process in the clean energy base until the hydropower output and water level of the reservoir in all months of the operation cycle are calculated, and calculate hydropower generation probability to complete operation.

Abstract: A speech control system includes a first client running on a mobile terminal, a server end running on a server, and a second client running on a controlled terminal. The first client obtains identity information of a user, and sends the identity information of the user to the server end. The server end verifies the identity information of the user. The first client further collects speech data of the user, generates a speech control request based on the speech data, and sends the speech control request to the server end. When verification on the identity information succeeds, the server end generates a control instruction based on the speech control request, and sends the control instruction to the second client. The second client indicates the controlled terminal to execute the control instruction.

Abstract: Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.

Abstract: Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.

Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include selectively depositing a self-assembled monolayer (SAM) on the bottom of the gap. The SAM comprises a hydrocarbon having a formula of H—C?C—R, wherein R is a linear alkyl chain or aryl group comprising from 1 to 20 carbon atoms or a formula of R?C?CR?, wherein R? and R? independently include a linear alkyl chain or aryl group comprising from 1 to 20 carbon atoms A barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.

Abstract: A method and system for improving e-commerce that is directed at improving landing pages for consumer products. Using long tail query phrases, the method and system generates more detailed landing pages that will assist in providing more information to consumers.

Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. A self-assembled monolayer (SAM) is formed on the bottom of the gap, and a barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.

Abstract: Described are microelectronic devices comprising a dielectric layer formed on a substrate, a feature comprising a gap defined in the dielectric layer, a barrier layer on the dielectric layer, a two metal liner film on the barrier layer and a gap fill metal on the two metal liner. Embodiments provide a method of forming a microelectronic device comprising the two metal liner film on the barrier layer.

Abstract: Compounds of Formula IA, IB, II, III, IV, and/or V are described herein along with their methods of use. A compound of the present invention may cross-link under physiological conditions and/or in vivo.