Abstract: Embodiments of the present disclosure are related to improved methods for forming an interconnect structure in a substrate. In one implementation, the method includes forming a barrier layer on exposed surfaces of a feature in a dielectric layer, forming a liner layer on the barrier layer, forming a seed layer on the liner layer, forming a metal fill on the seed layer by a metal fill process and overburdening the feature using an electroplating process, performing a planarization process to expose a top surface of the dielectric layer, and selectively forming a cobalt-aluminum alloy cap layer on the barrier layer, the liner layer, the seed layer, and the metal fill by exposing the substrate to a cobalt-containing precursor and an aluminum-containing precursor.

Abstract: A method for forming a metal liner layer for an interconnect uses a multi-metal deposition process to produce a reduced thickness liner. The back-end-of-the-line packaging process may include forming a metal liner layer by depositing a ruthenium layer with a first thickness of approximately 5 angstroms or less and depositing a first cobalt layer with a second thickness of approximately 20 angstroms or less. In some embodiments, the ruthenium layer may be deposited on a previously formed barrier layer and then undergoes a treatment process before depositing the first cobalt layer. In some embodiments, the first cobalt layer may be deposited on the ruthenium layer or the ruthenium layer maybe deposited on the first cobalt layer. In some embodiments, the ruthenium layer is deposited on the first cobalt layer and a second cobalt layer is deposited on the ruthenium layer.

Abstract: A hydro-photovoltaic complementary operation chart application method for a clean energy base includes: divide a hydro-photovoltaic complementary operation chart into two sub-operation charts by runoff probability and critical probability; predict runoff and predicted photovoltaic output during the operation cycle, select the sub-operation chart by the runoff probability, determine hydropower output of a reservoir in the current month according to water level of the reservoir at the beginning of the current month and the operation area, and obtain the water level of the reservoir at the end of the current month through the runoff calculation; obtain long-term hydropower output process and reservoir level process in the clean energy base until the hydropower output and water level of the reservoir in all months of the operation cycle are calculated, and calculate hydropower generation probability to complete operation.

Abstract: A speech control system includes a first client running on a mobile terminal, a server end running on a server, and a second client running on a controlled terminal. The first client obtains identity information of a user, and sends the identity information of the user to the server end. The server end verifies the identity information of the user. The first client further collects speech data of the user, generates a speech control request based on the speech data, and sends the speech control request to the server end. When verification on the identity information succeeds, the server end generates a control instruction based on the speech control request, and sends the control instruction to the second client. The second client indicates the controlled terminal to execute the control instruction.

Abstract: Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.

Abstract: Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.

Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include selectively depositing a self-assembled monolayer (SAM) on the bottom of the gap. The SAM comprises a hydrocarbon having a formula of H—C?C—R, wherein R is a linear alkyl chain or aryl group comprising from 1 to 20 carbon atoms or a formula of R?C?CR?, wherein R? and R? independently include a linear alkyl chain or aryl group comprising from 1 to 20 carbon atoms A barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.

Abstract: A method and system for improving e-commerce that is directed at improving landing pages for consumer products. Using long tail query phrases, the method and system generates more detailed landing pages that will assist in providing more information to consumers.

Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. A self-assembled monolayer (SAM) is formed on the bottom of the gap, and a barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.

Abstract: Described are microelectronic devices comprising a dielectric layer formed on a substrate, a feature comprising a gap defined in the dielectric layer, a barrier layer on the dielectric layer, a two metal liner film on the barrier layer and a gap fill metal on the two metal liner. Embodiments provide a method of forming a microelectronic device comprising the two metal liner film on the barrier layer.

Abstract: Compounds of Formula IA, IB, II, III, IV, and/or V are described herein along with their methods of use. A compound of the present invention may cross-link under physiological conditions and/or in vivo.

Abstract: Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.

Abstract: Embodiments of the present disclosure are related to improved methods for forming an interconnect structure in a substrate. In one implementation, the method includes forming a barrier layer on exposed surfaces of a feature in a dielectric layer, forming a liner layer on the barrier layer, forming a seed layer on the liner layer, forming a metal fill on the seed layer by a metal fill process and overburdening the feature using an electroplating process, performing a planarization process to expose a top surface of the dielectric layer, and selectively forming a cobalt-aluminum alloy cap layer on the barrier layer, the liner layer, the seed layer, and the metal fill by exposing the substrate to a cobalt-containing precursor and an aluminum-containing precursor.

Abstract: Disclosed is a hardware-based protection group switching method and optical communication equipment.

Abstract: Embodiments of the present disclosure are related to improved methods for forming an interconnect structure in a substrate. In one implementation, the method includes providing a substrate comprising a metal region and a dielectric region surrounding the metal region, selectively forming a cobalt-containing alloy cap layer on the metal region by exposing the substrate to a first precursor and a second precursor, the first precursor and the second precursor are selected from a group consisting of an aluminum-containing precursor, a cobalt-containing precursor, a ruthenium-containing precursor, a manganese-containing precursor, and a tungsten-containing precursor, wherein the first precursor is different from the second precursor.

Abstract: Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.

Abstract: Described are microelectronic device comprising a dielectric layer formed on a substrate, a feature 206 comprising a gap defined in the dielectric layer, a barrier layer on the dielectric layer, a two metal liner film on the barrier layer and a gap fill metal on the two metal liner. Embodiments provide a method of forming an microelectronic device comprising the two metal liner film on the barrier layer.

Abstract: Methods and apparatus for forming an interconnect structure, the method including selectively depositing two or more capping layers atop a top surface of a via within a low-k dielectric layer, wherein the two or more capping layers include a first layer of ruthenium and a second layer of cobalt.

Abstract: A method of distance measuring includes obtaining a depth map and a stereo pair of images of a scene of interest, and enhancing a precision of the depth map based on disparity values of corresponding points between the images. The images have a higher resolution than the depth map. Enhancing the precision of the depth map includes optimizing an energy function of the images over a predetermined range of disparity values to obtain an optimized energy function; determining the disparity values based on the optimized energy function; and replacing low precision values of the depth map with corresponding high precision values based on the disparity values.

Abstract: Methods, systems, and articles of manufacture configured to operate an aerial vehicle are provided. Various embodiments may be implemented with an aerial vehicle. In one exemplary implementation, a method of operating an aerial vehicle may include identifying, from image data, a set of predetermined features based on one or more invariant properties associated with the predetermined features. The predetermined features may be associated with predetermined physical locations. Based on the image locations of the predetermined features within the image data and the predetermined physical locations of the predetermined features, a system may be configured to determine at least one of a location and an orientation of the aerial vehicle. The disclosed embodiments may provide enhanced accuracy, usability, and robustness in tracking the location and orientation of an aerial vehicle under various operation conditions.