Abstract: A high-threshold-voltage normally-off high-electron-mobility transistor (HEMT) includes a nucleation layer and an epitaxial layer are grown sequentially on a substrate; a barrier layer, a source, and a drain above the epitaxial layer; the barrier layer and the epitaxial layer form a heterojunction structure, and the contact interface therebetween is induced by polarization charges to generate two-dimensional electron gas. The HEMT includes a passivation layer above the barrier layer; a gate cap layer above the gate region barrier layer; the upper part of the gate cap layer is subjected to surface plasma oxidation to form an oxide dielectric layer, or a single-layer or multiple gate dielectric insertion layer is directly deposited thereon. The HEMT includes a gate is located above the gate dielectric insertion layer; the gate is in contact with the passivation layer; and a field plate extends from the gate to the drain on the passivation layer.

Abstract: A display substrate, including: a base substrate; and a metal conductive layer, located at a side of the base substrate, and including a core conductive layer and a functional conductive layer laminated along a direction away from the base substrate; a material of the core conductive layer includes a conductive metal material; a material of the functional conductive layer includes a first diffusion barrier metal material and a first adhesion force enhancing metal material, wherein the first diffusion barrier metal material is configured to block diffusion of the conductive metal material, and the first adhesion force enhancing metal material is configured to enhance an adhesion force between the functional conductive layer and a photoresist used in a patterning process of the functional conductive layer; a surface energy of any of first adhesion force enhancing metal materials is less than or equal to 325 mJ/m2.

Abstract: An array substrate, a display device and a fabrication method are provided. The array substrate includes a first metal layer at one side of a base substrate, the first metal layer including a light shielding part, a source, a drain in a display area; a second metal layer at a side, facing away from an active layer, of gate insulating layer, the second metal layer includes a gate, a source-landing electrode a drain-landing electrode in the display area, the source-landing electrode is in contact with the active layer and the source through a first via hole penetrating through the gate insulating layer and a buffer layer and exposing one end of the active layer, the drain-landing electrode is in contact with the active layer and the drain through a second via hole penetrating through the gate insulating layer and the buffer layer and exposing other end of the active layer.

Abstract: An array substrate, a display device and a fabrication method are provided. The array substrate includes a first metal layer at one side of a base substrate, the first metal layer including a light shielding part, a source, a drain in a display area; a second metal layer at a side, facing away from an active layer, of gate insulating layer, the second metal layer includes a gate, a source-landing electrode a drain-landing electrode in the display area, the source-landing electrode is in contact with the active layer and the source through a first via hole penetrating through the gate insulating layer and a buffer layer and exposing one end of the active layer, the drain-landing electrode is in contact with the active layer and the drain through a second via hole penetrating through the gate insulating layer and the buffer layer and exposing other end of the active layer.

Abstract: This application discloses an electronic vaporization device, including: a first storage unit, configured to store a first liquid; a second storage unit, configured to store a second liquid; a vaporization unit, configured to vaporize the liquid to produce an aerosol for a user to inhale; a first liquid delivery channel, which is fluidly communicated with the first storage unit and the vaporization unit to accordingly deliver the first liquid to the vaporization unit a second liquid delivery channel, which is fluidly communicated with the second storage unit and the vaporization unit to accordingly deliver the second liquid to the vaporization unit where the first liquid delivery channel and the second liquid delivery channel are configured to deliver the corresponding liquid to the vaporization unit at different times. This application can increase the liquid storage amount of the electronic vaporization device through the first storage unit and the second storage unit.

Abstract: A display substrate and a manufacturing method thereof and a display panel are disclosed. The display substrate includes a base substrate, a connection electrode, a conductive sealant, a plurality of via-holes respectively in different layers and a bridge electrode. The connection electrode is on the base substrate; the conductive sealant is at a side, away from the base substrate, of the connection electrode and is electrically connected with the connection electrode via the plurality of via-holes respectively in different layers; the bridge electrode is at least partially in at least one via-hole of the plurality of via-holes, and is electrically connected with the connection electrode and the conductive sealant; in a direction perpendicular to the base substrate, the plurality of via-holes are at least partially not overlapped with each other.

Abstract: A half via hole structure, a method for manufacturing the same, an array substrate, and a display panel are provided. The half via hole structure includes: a spacer layer arranged on an underlaying substrate; a passivation layer arranged on the spacer layer and provided with a first via hole, an orthographic projection of the first via hole on the underlaying substrate being within that of the spacer layer on the underlaying substrate; a first conductive layer arranged on the spacer layer and having a width smaller than a diameter of the first via hole; an insulating layer arranged between the spacer layer and the passivation layer and provided with a second via hole; and a second conductive layer arranged on the passivation layer and overlapped with the first conductive layer through the first via hole.

Abstract: A thin film transistor includes a substrate, and a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode which are on the substrate. The active layer includes a channel region between the source electrode and the drain electrode and the channel region includes an edge region along a channel length direction and a main region outside the edge region. The thin film transistor further includes an auxiliary layer, a projection of the auxiliary layer on the substrate is at least partially overlapped with a projection of the edge region of the channel region on the substrate, and the auxiliary layer is configured to enhance a turn-on voltage of the edge region of the channel region.

Abstract: An array substrate, a display device and a fabrication method are provided. The array substrate includes a first metal layer at one side of a base substrate, the first metal layer including a light shielding part, a source, a drain in a display area; a second metal layer at a side, facing away from an active layer, of gate insulating layer, the second metal layer includes a gate, a source-landing electrode a drain-landing electrode in the display area, the source-landing electrode is in contact with the active layer and the source through a first via hole penetrating through the gate insulating layer and a buffer layer and exposing one end of the active layer, the drain-landing electrode is in contact with the active layer and the drain through a second via hole penetrating through the gate insulating layer and the buffer layer and exposing other end of the active layer.

Abstract: A shift register, a gate drive circuit, and a display panel are provided. The shift register includes an input sub-circuit configured to pre-charge a pull-up node using an input signal; an output sub-circuit configured to output a clock signal through an signal output terminal; a pull-down control sub-circuit configured to control a potential of a pull-down node using a power supply voltage signal; a first pull-down sub-circuit configured to pull down a potential of the pull-down node using a first preset voltage signal; and a first control sub-circuit configured to control the potential of the pull-up node using a second preset voltage signal in response to the potential of the pull-down node; a potential of the first preset voltage signal is lower than a potential of a non-operating level signal of the first pull-down sub-circuit, but higher than a potential of the second preset voltage signal.