Patents by Inventor Zubin HUANG
Zubin HUANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11961739Abstract: Embodiments of the present technology include semiconductor processing methods to make boron-and-silicon-containing layers that have a changing atomic ratio of boron-to-silicon. The methods may include flowing a silicon-containing precursor into a substrate processing region of a semiconductor processing chamber, and also flowing a boron-containing precursor and molecular hydrogen (H2) into the substrate processing region of the semiconductor processing chamber. The boron-containing precursor and the H2 may be flowed at a boron-to-hydrogen flow rate ratio. The flow rate of the boron-containing precursor and the H2 may be increased while the boron-to-hydrogen flow rate ratio remains constant during the flow rate increase. The boron-and-silicon-containing layer may be deposited on a substrate, and may be characterized by a continuously increasing ratio of boron-to-silicon from a first surface in contact with the substrate to a second surface of the boron-and-silicon-containing layer furthest from the substrate.Type: GrantFiled: October 5, 2020Date of Patent: April 16, 2024Assignee: Applied Materials, Inc.Inventors: Yi Yang, Krishna Nittala, Rui Cheng, Karthik Janakiraman, Diwakar Kedlaya, Zubin Huang, Aykut Aydin
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Patent number: 11939675Abstract: In one aspect, an apparatus includes a chamber body, a blocker plate for delivering process gases into a gas mixing volume, and a face plate having holes through which the mixed gas is distributed to a substrate. In another aspect, the face plate may include a first region with a recess relative to a second region. In another aspect, the blocker plate may include a plurality of regions, each region having different hole patterns/geometries and/or flow profiles. In another aspect, the apparatus may include a radiation shield disposed below a bottom of the substrate support. A shaft or stem of the substrate support includes holes at an upper end thereof near the substrate support.Type: GrantFiled: August 10, 2018Date of Patent: March 26, 2024Assignee: Applied Materials, Inc.Inventors: Rui Cheng, Karthik Janakiraman, Zubin Huang
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Patent number: 11939668Abstract: A method of forming a tungsten-containing layer over a substrate includes a) positioning a substrate on a substrate support in a process volume of a process chamber; b) providing a precursor gas to the process volume of the process chamber for a first duration; and c) providing a tungsten-containing gas to the process volume of the process chamber by opening a pulsing valve on a tungsten-containing gas delivery line for a second duration occurring after the first duration to form a tungsten-containing layer on the substrate. The tungsten-containing gas delivery line includes a first section connected to an inlet of the pulsing valve and a second section connected to an outlet of the pulsing valve, the first section connects the inlet of the pulsing valve to a reservoir of tungsten-containing gas, the second section connects the outlet of the pulsing valve to an inlet of the process chamber.Type: GrantFiled: April 26, 2022Date of Patent: March 26, 2024Assignee: Applied Materials, Inc.Inventors: Zubin Huang, Mohammed Jaheer Sherfudeen, David Matthew Santi, Jallepally Ravi, Peiqi Wang, Kai Wu
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Patent number: 11830706Abstract: Embodiments of the present disclosure generally relate to a pedestal for increasing temperature uniformity in a substrate supported thereon. The pedestal comprises a body having a heater embedded therein. The body comprises a patterned surface that includes a first region having a first plurality of posts extending from a base surface of the body at a first height, and a second region surrounding the central region having a second plurality of posts extending from the base surface at a second height that is greater than the first height, wherein an upper surface of each of the first plurality of posts and the second plurality of posts are substantially coplanar and define a substrate receiving surface.Type: GrantFiled: December 4, 2019Date of Patent: November 28, 2023Assignee: Applied Materials, Inc.Inventors: Venkata Sharat Chandra Parimi, Zubin Huang, Jian Li, Satish Radhakrishnan, Rui Cheng, Diwakar N. Kedlaya, Juan Carlos Rocha-Alvarez, Umesh M. Kelkar, Karthik Janakiraman, Sarah Michelle Bobek, Prashant Kumar Kulshreshtha, Vinay K. Prabhakar, Byung Seok Kwon
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Publication number: 20230374660Abstract: A substrate processing system is provided having a processing chamber. The processing chamber includes a lid plate, one or more chamber sidewalls, and a chamber base that collectively define a processing volume. An annular plate is coupled to the lid plate, and an edge manifold is fluidly coupled to the processing chamber through the annular plate and the lid plate. The substrate processing system includes a center manifold that is coupled to the lid plate.Type: ApplicationFiled: May 17, 2022Publication date: November 23, 2023Inventors: Harpreet SINGH, Jallepally RAVI, Zubin HUANG, Manjunatha KOPPA, Sandesh YADAMANE, Srinivas TOKUR MOHANA, Shreyas PATIL SHANTHAVEERASWAMY, Kai WU, Peiqi WANG, Mingrui ZHAO
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Publication number: 20230357929Abstract: A shadow ring for a processing chamber, such as a semiconductor processing chamber, is an annular member including a body with a radially inwardly projecting lip. The shadow ring includes a feature that mitigates heat transfer between the lip and the rest of the body. In one example, the feature includes a plurality of apertures, each aperture extending from an upper opening at an upper surface of the shadow ring to a corresponding lower opening at a lower surface of the shadow ring. A neck between adjacent apertures creates a bottleneck that hinders conductive heat transfer.Type: ApplicationFiled: July 11, 2022Publication date: November 9, 2023Inventors: Zubin HUANG, Jallepally RAVI, Cheng CHENG, Peiqi WANG, Kai WU
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Publication number: 20230340662Abstract: A method of forming a tungsten-containing layer over a substrate includes a) positioning a substrate on a substrate support in a process volume of a process chamber; b) providing a precursor gas to the process volume of the process chamber for a first duration; and c) providing a tungsten-containing gas to the process volume of the process chamber by opening a pulsing valve on a tungsten-containing gas delivery line for a second duration occurring after the first duration to form a tungsten-containing layer on the substrate. The tungsten-containing gas delivery line includes a first section connected to an inlet of the pulsing valve and a second section connected to an outlet of the pulsing valve, the first section connects the inlet of the pulsing valve to a reservoir of tungsten-containing gas, the second section connects the outlet of the pulsing valve to an inlet of the process chamber.Type: ApplicationFiled: April 26, 2022Publication date: October 26, 2023Inventors: Zubin HUANG, Mohammed Jaheer SHERFUDEEN, David Matthew SANTI, Jallepally Ravi, Peiqi WANG, Kai WU
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Patent number: 11798820Abstract: A system may include a main line for delivering a first gas, and a sensor for measuring a concentration of a precursor in the first gas delivered through the main line. The system may further include first and second sublines for providing fluid access to first and second processing chambers, respectively. The first subline may include a first flow controller for controlling the first gas flowed through the first subline. The second subline may include a second flow controller for controlling the first gas flowed through the second subline. A delivery controller may be configured to control the first and second flow controllers based on the measured concentration of the precursor to deliver a first mixture of the first gas and a second gas and a second mixture of the first and second gases into the first and second semiconductor processing chambers, respectively.Type: GrantFiled: November 11, 2020Date of Patent: October 24, 2023Assignee: Applied Materials, Inc.Inventors: Diwakar Kedlaya, Fang Ruan, Zubin Huang, Ganesh Balasubramanian, Kaushik Alayavalli, Martin Seamons, Kwangduk Lee, Rajaram Narayanan, Karthik Janakiraman
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Publication number: 20230265561Abstract: A substrate support includes a monolithic body. The monolithic body includes a central portion and a peripheral portion. The central portion includes a top surface recessed with respect to the peripheral portion. A shadow ring is configured to sit directly upon an upper surface of the peripheral portion, and overlaps a portion of a substrate positioned upon the central portion. A heating element embedded within the central portion heats the central portion, the peripheral portion, and the shadow ring.Type: ApplicationFiled: May 23, 2022Publication date: August 24, 2023Inventors: Zubin HUANG, Tomoharu MATSUSHITA, Cheng-Hsiung TSAI
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Publication number: 20230146981Abstract: Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region, and the substrate may be maintained at a temperature below or about 450° C. The methods may include striking a plasma of the silicon-containing precursor. The methods may include forming a layer of amorphous silicon on a semiconductor substrate. The layer of amorphous silicon as-deposited may be characterized by less than or about 3% hydrogen incorporation.Type: ApplicationFiled: January 5, 2023Publication date: May 11, 2023Applicant: Applied Materials, Inc.Inventors: Rui Cheng, Diwakar Kedlaya, Karthik Janakiraman, Gautam K. Hemani, Krishna Nittala, Alicia J. Lustgraaf, Zubin Huang, Brett Spaulding, Shashank Sharma, Kelvin Chan
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Publication number: 20230130756Abstract: Embodiments of the disclosure provided herein generally relate to a bottom cover plate (BCP) that enables control of radiation loss from a heating element inside a chamber for processing a substrate. The heating element is used to heat the substrate before or during processing and may heat the substrate unevenly due to uneven heat losses within the chamber. For example, the uneven heating of the substrate may result in uneven deposition of a material on the substrate, which may result in excess processing to correct the deposition or wasted product from disposing of improperly processed substrates. The BCP may be used to correct the uneven heating of the substrate.Type: ApplicationFiled: October 22, 2021Publication date: April 27, 2023Inventors: Zubin HUANG, Srinivas Tokur MOHANA, Sandesh YADAMANE, Kai WU, Jallepally RAVI, Xiaozhou YU, Peiqi WANG
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Publication number: 20230118964Abstract: A target concentration profile for a film to be deposited on a surface of a substrate during a deposition process for the substrate at a process chamber of a manufacturing system is identified. Data of the target concentration profile is processed using a model. The model outputs a set of deposition process settings that corresponds to the target concentration profile. One or more operations of the deposition process are performed in accordance with the set of deposition process settings.Type: ApplicationFiled: December 19, 2022Publication date: April 20, 2023Inventors: Anton V. Baryshnikov, Aykut Aydin, Zubin Huang, Rui Cheng, Yi Yang, Diwakar Kedlaya, Venkatanarayana Shankaramurthy, Krishna Nittala, Karthik Janakiraman
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Publication number: 20230093450Abstract: The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a first mandrel layer on a material layer disposed on a substrate. A first spacer layer is conformally formed on sidewalls of the first mandrel layer, wherein the first spacer layer comprises a doped silicon material. The first mandrel layer is selectively removed while keeping the first spacer layer. A second spacer layer is conformally formed on sidewalls of the first spacer layer and selectively removing the first spacer layer while keeping the second spacer layer.Type: ApplicationFiled: November 30, 2022Publication date: March 23, 2023Inventors: Tzu-shun YANG, Rui CHENG, Karthik JANAKIRAMAN, Zubin HUANG, Diwakar KEDLAYA, Meenakshi GUPTA, Srinivas GUGGILLA, Yung-chen LIN, Hidetaka OSHIO, Chao LI, Gene LEE
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Patent number: 11598004Abstract: The present disclosure relates to a lid assembly apparatus and related methods for substrate processing chambers. In one implementation, a lid assembly includes a gas manifold. The gas manifold includes a first gas channel configured to receive a process gas, a second gas channel configured to receive a doping gas, and a third gas channel configured to receive a cleaning gas. The lid assembly also includes a showerhead. The showerhead includes one or more first gas openings that are configured to receive the process gas, and one or more second gas openings that are configured to receive the doping gas.Type: GrantFiled: February 26, 2020Date of Patent: March 7, 2023Assignee: APPLIED MATERIALS, iNC.Inventors: Hanish Kumar Panavalappil Kumarankutty, Prashant A. Desai, Diwakar N. Kedlaya, Sumit Agarwal, Vidyadharan Srinivasa Murthy Bangalore, Truong Nguyen, Zubin Huang
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Publication number: 20230023764Abstract: Methods and apparatus for surface profiling and texturing of chamber components for use in a process chamber, such surface-profiled or textured chamber components, and method of use of same are provided herein. In some embodiments, a method includes measuring a parameter of a reference substrate or a heated pedestal using one or more sensors and modifying a surface of a chamber component physically based on the measured parameter.Type: ApplicationFiled: December 15, 2020Publication date: January 26, 2023Inventors: David W. GROECHEL, Michael R. RICE, Gang Grant PENG, Rui CHENG, Zubin HUANG, Han WANG, Karthik JANAKIRAMAN, Diwakar KEDLAYA, Paul L. BRILLHART, Abdul Aziz KHAJA
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Patent number: 11562902Abstract: Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region, and the substrate may be maintained at a temperature below or about 450° C. The methods may include striking a plasma of the silicon-containing precursor. The methods may include forming a layer of amorphous silicon on a semiconductor substrate. The layer of amorphous silicon may be characterized by less than or about 3% hydrogen incorporation.Type: GrantFiled: July 19, 2020Date of Patent: January 24, 2023Assignee: Applied Materials, Inc.Inventors: Rui Cheng, Diwakar Kedlaya, Karthik Janakiraman, Gautam K. Hemani, Krishna Nittala, Alicia J. Lustgraaf, Zubin Huang, Brett Spaulding, Shashank Sharma, Kelvin Chan
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Publication number: 20230002894Abstract: A method and apparatus for processing a substrate are described herein. The methods and apparatus described enable the raising and lowering of a shadow ring within a process chamber either simultaneously with or separately from a plurality of substrate lift pins. The shadow ring is raised and lowered using a shadow ring lift assembly and may be raised to a pre-determined height above the substrate during a radical treatment operation. The shadow ring lift assembly may also raise and lower the plurality of substrate lift pins to enable both the shadow ring and the substrate lift pins to be raised to a transfer position when the substrate is being transferred into or out of the process chamber.Type: ApplicationFiled: September 13, 2021Publication date: January 5, 2023Inventors: Zubin HUANG, Jallepally Ravi, Kai WU, Xiaoxiong YUAN
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Patent number: D997893Type: GrantFiled: September 28, 2021Date of Patent: September 5, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Zubin Huang, Srinivas Tokur Mohana, Shreyas Patil Shanthaveeraswamy, Sandesh Yadamane, Jallepally Ravi, Harpreet Singh, Manjunatha Koppa
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Patent number: D997894Type: GrantFiled: September 28, 2021Date of Patent: September 5, 2023Assignee: Applied Materials, Inc.Inventors: Zubin Huang, Srinivas Tokur Mohana, Shreyas Patil Shanthaveeraswamy, Sandesh Yadamane, Jallepally Ravi, Harpreet Singh, Manjunatha Koppa
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Patent number: D1009817Type: GrantFiled: September 28, 2021Date of Patent: January 2, 2024Assignee: Applied Materials, Inc.Inventors: Zubin Huang, Srinivas Tokur Mohana, Shreyas Patil Shanthaveeraswamy, Sandesh Yadamane, Jallepally Ravi, Harpreet Singh, Manjunatha Koppa