STRAINED SILICON ON RELAXED SIGE FILM WITH UNIFORM MISFIT DISLOCATION DENSITY

Abstract

A method for forming a semiconductor substrate structure is provided. A compressively strained SiGe layer is formed on a silicon substrate. Atoms are ion-implanted onto the SiGe layer to cause end-of-range damage. Annealing is performed to relax the strained SiGe layer. During the annealing, interstitial dislocation loops are formed as uniformly distributed in the SiGe layer. The interstitial dislocation loops provide a basis for nucleation of misfit dislocations between the SiGe layer and the silicon substrate. Since the interstitial dislocation loops are distributed uniformly, the misfit locations are also distributed uniformly, thereby relaxing the SiGe layer. A tensilely strained silicon layer is formed on the relaxed SiGe layer.

Description

BACKGROUND OF THE INVENTION

FIELD OF THE INVENTION

The invention relates to methods for manufacturing semiconductor devices having improved device performances, and, more particularly to methods for forming a relaxed SiGe film.

BACKGROUND DESCRIPTION

The escalating requirements for ultra large scale integration semiconductor devices require ever increasing high performance and density of transistors. With device scaling-down reaching limits, the trend has been to seek new materials and methods that enhance device performance. One of the most direct methods to increase performance is through mobility enhancement. It has been known that stress or strain applied to semiconductor lattice structures can improve device performances. For example, an N type device formed on an biaxially strained (e.g., an expanded lattice) silicon substrate exhibits better device performances than other N type devices formed on a silicon substrate without strain (or the expanded lattice structure). Also, a P type device having longitudinal (in the direction of current flow) compressive strain exhibits better device performance than other P type devices formed on a silicon substrate without such strain. The P type device also exhibits enhanced performance with very large biaxial tensile strain.

Alternatively, it has been known that a device exhibits better performance characteristics when formed on a silicon layer (or cap) that is epitaxially grown on another epitaxially grown SiGe layer that has relaxed on top of the silicon substrate. In this system, the silicon cap experiences biaxial tensile strain. When epitaxially grown on silicon, an unrelaxed SiGe layer will have a lattice constant that conforms to that of the silicon substrate. Upon relaxation (through a high temperature process for example) the SiGe lattice constant approaches that of its intrinsic lattice constant which is larger than that of silicon. A fully relaxed SiGe layer has a lattice constant close to that of its intrinsic value. When the silicon layer is epitaxially grown thereon, the silicon layer conforms to the larger lattice constant of the relaxed SiGe layer and this applies physical biaxial stress (e.g., expansion) to the silicon layer being formed thereon. This physical stress applied to the silicon layer is beneficial to the devices (e.g., CMOS devices) formed thereon because the expanded silicon layer increases N type device performance and higher Ge concentration in the SiGe layer improves P type device performances.

Relaxation in SiGe on silicon substrates occurs through the formation of misfit dislocations. For a perfectly relaxed substrate, one can envision a grid of misfit dislocations equally spaced that relieve the stress. The misfit dislocations facilitate the lattice constant in the SiGe layer to seek its intrinsic value by providing extra half-planes of silicon in the substrate. The mismatch strain across the SiGe/silicon interface is then accommodated and the SiGe lattice constant is allowed to get larger.

However, the problem with this conventional approach is that it requires a multi-layered SiGe buffer layer that is very thick (e.g., a thickness of approximately 5000 Å to 15000 Å) to achieve misfit dislocations on its surface portion while avoiding threading dislocations between the SiGe layer and the silicon substrate layer, thereby achieving a relaxed SiGe structure on the surface of the multi-layered SiGe layer. Also, this approach significantly increases manufacturing time and costs. Further, the thick graded SiGe buffer layer cannot be easily applicable to silicon-on-substrate (SOI). This is because for silicon-on-insulator the silicon thickness has to be below 1500 Å for the benefits of SOI to be valid. The SiGe buffered layer structure is too thick.

Another problem is that misfit dislocations formed between the SiGe layer and the silicon epitaxial layer are random and highly non-uniform and cannot be easily controlled due to heterogeneous nucleation that cannot be easily controlled. Also, misfit dislocation densities are significantly different from one place to another. Thus, the physical stress derived from the non-uniform misfit dislocations are apt to be also highly non-uniform in the silicon epitaxial layer, and this non-uniform stress causes non-uniform benefits for performance with larger variability. Further at those locations where misfit density are high, the defects degrade device performances through shorting device terminals and through other significant leakage mechanisms.

Therefore, there is a need for effective methodology for manufacturing a relaxed SiGe layer.

SUMMARY OF THE INVENTION

In an aspect of the invention, a method is provided for manufacturing semiconductor device. First, a compressively strained SiGe layer is formed on a silicon substrate. Atoms are ion-implanted to form uniformly distributed interstitial dislocation loops in the SiGe layer. Annealing is performed to form uniformly distributed misfit dislocations at the SiGe-silicon interface.

In another aspect of the invention, a method for forming a semiconductor substrate is provided. A SiGe layer is formed on a silicon substrate and the SiGe layer is compressively strained. Atoms are controllably ion-implanted onto the SiGe layer to causing uniformly distributed end-of-range damage therein. Annealing is performed to form interstitial dislocation loops uniformly distributed in the SiGe layer. The uniformly distributed interstitial dislocation loops nucleate uniformly distributed misfit dislocations in the SiGe layer. An expansively strained silicon layer is formed on the SiGe layer.

Yet another aspect of the invention is a semiconductor device having a silicon substrate. A relaxed SiGe layer is formed on the silicon substrate and the SiGe layer includes uniformly distributed misfit dislocations. An expansively strained silicon layer formed on the relaxed SiGe layer.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing and other advantages will be better understood from the following detailed description of a preferred embodiment of the invention with reference to the drawings, in which:

FIGS. 1 to 4 depict sequential phases of the method according to an embodiment of the invention; and

FIG. 5 depicts a side view of a semiconductor device structure shown in FIG. 3 after annealing is performed.

DETAILED DESCRIPTION OF EMBODIMENTS OF THE INVENTION

The invention provides a method that provides an expansively strained silicon layer, which improves performances of the devices formed thereon. The strained silicon layer is formed by epitaxially growing silicon on a relaxed SiGe layer. The relaxed SiGe layer is formed by forming uniformly distributed misfit dislocations in an initially compressively strained SiGe layer formed on a silicon substrate. Nucleation of the misfit dislocations is heavily influenced by interstitial dislocation loops. Thus, in the invention, the interstitial dislocation loops are formed at the desired locations in the SiGe layer with desired densities, in order to control the dislocations and densities of nucleation of the misfit dislocations in the SiGe layer. Thus, the compressively strained SiGe layer is relaxed by nucleation of the misfit dislocations. Since the SiGe layer is relaxed, the silicon layer formed thereon is formed as expansively conforming to the larger lattice constant of the relaxed SiGe layer. As a result, the silicon layer is biaxially tensilely strained, and this increases performances of the devices formed thereon.

FIG. 1 shows a SiGe layer 12 formed on a silicon substrate 10. In an embodiment, the SiGe layer 12 is formed by epitaxially growing at a thickness of approximately 100 Å to 10000 Å. Thus, contrary to conventional art, the invention does not require formation of a thick multi-layered SiGe layer to achieve a relaxed SiGe layer. The silicon substrate 10 has a lattice constant that is less that that of intrinsic unrelaxed SiGe. Thus, when the SiGe layer 12 is epitaxially grown, the SiGe layer 12 is biaxially compressively strained because the underlying silicon layer constrains the epitaxial growth such that the larger lattice structure of the SiGe layer 12 is harmonized with the smaller lattice structure of the silicon substrate 10.

In FIG. 2, atoms are controllably ion-implanted, as shown by arrows “A”, onto the SiGe layer 12 at implantation concentration and energy sufficient to amorphize an upper surface portion of the SiGe layer 12. Any neutral amorphization atoms, such as Ge or Si, can be used as the ion-implantation atoms. As the result, an amorphous layer 14 is formed on the upper surface region of the SiGe layer 12. In an embodiment, the amorphous layer 14 is formed to have a thickness of approximately 30 Å to 300 Å, which is approximately one third of the SiGe layer thickness. Noble gases such as He, Ar, etc. could also be used in lieu of Ge or Si, but the dosage has to be high which may lead to other unwanted leakage issues.

During the ion-implantation, the atoms collide with the lattice structure of the SiGe layer 12 and cause amorphization. In an embodiment, for the amorphization, Ge is ion-implanted at an impurity concentration of approximately 3×10¹⁴ atoms/cm². End-of-range damage to the SiGe layer 12 is formed upon annealing of the amorphized silicon/SiGe material. The end of range damage consists of interstitial loops that coalesce from the damage during annealing. They are relatively stable and have sizes of approximately 100 Å to 500 Å, and have a relatively uniform density.

The end-of-range damage is embedded in the SiGe layer 12 from the interface between the amorphous region 14 and the SiGe layer 12 down towards the interface between the SiGe layer 12 and the silicon substrate 10. The locations of end-of-range damage can be accurately modulated by controlling the ion-implantation concentration and energy. Thus, when the atoms are ion-implanted to form the amorphous layer 14, the implantation concentration and energy are controllably selected such that the end-of-range damage is uniformly distributed in the SiGe layer 12. For example, the atoms are ion-implanted at an implantation concentration of approximately 1×10¹⁴ atoms/cm² to 1×10¹⁶ atoms/cm² at implantation energy of approximately 5 KeV to 100 KeV. As will be explained later, the end-of-range damage provides a basis for nucleation of misfit dislocations.

Subsequently, annealing is performed for recrystallization of the amorphous layer 14. In an embodiment, the annealing is performed at a temperature of approximately 500° C to 1100° C. for approximately 1 second to 30 minutes. Also, the annealing can be performed via spike, rapid thermal or other annealing techniques. As shown in FIG. 3, upon performing annealing, end-of-range interstitial dislocation loops 16 are formed corresponding to the end-of-range damage. In an embodiment, a density of the end-of-range interstitial dislocation loops 16 is approximately 1×10⁵ loops/cm² to 1×10¹² loops/cm².

While the SiGe layer 12 is annealed and the amorphous layer 14 is recrystallized, the compressive strain applied to the SiGe layer 12 is relieved and the SiGe layer 12 is relaxed, as shown by arrows “B” in FIG. 3. When the strained SiGe layer 12 is relaxed, the relaxation of the SiGe layer 12 causes misfit dislocations at the interface between the SiGe layer 12 and the silicon substrate 10. Here, when the misfit dislocations are being created, the end-of-range interstitial dislocation loops 16 provide a basis for nucleation of the misfit dislocations. Thus, the misfit dislocations 18 are nucleated under the heavy influence of the end-of-range interstitial dislocation loops 16 that are uniformly distributed at the desired locations and at the desired density.

In an embodiment, a density of the misfit dislocations in the SiGe layer is approximately 1×10⁵ #/cm² to 1×10¹² #/cm². An example is shown in FIG. 4, in which the misfit dislocations 18 are formed uniformly along the lines connecting two neighboring end-of-range interstitial dislocation loops 16. FIG. 4 further shows the misfit dislocations 18 forming a grid that relaxes the compressive stress uniformly. According to the invention, the relaxation can be increased by creating more misfit dislocations. This is achieved by increasing density of the end-of-range interstitial dislocation loops 16 since nucleation of the misfit dislocations is heavily dictated by the end-of-range interstitial dislocation loops 16.

FIG. 5 shows a silicon layer 20 formed on the relaxed SiGe layer 12. In an embodiment, the silicon layer 20 is formed by epitaxially growing on the SiGe layer 12. Since the relaxed SiGe layer 12 has a higher lattice constant than that of silicon, the silicon layer 20 is formed on the SiGe layer 12 as conforming to the higher lattice constant of the relaxed SiGe layer 12. This applies biaxial tensile strain to the silicon layer 20.

Although it is not shown, conventional processing steps are performed to form devices on the biaxially strained silicon tensile layer 20. For example, a gate structure is formed on the silicon layer 20 with a gate oxide therebetween. Source and drain regions are formed in the expansively strained silicon layer 20 by ion-implanting impurity atoms. The tensilely strained silicon layer performs as a substrate and improves device performances.

In the embodiment described above, the atoms are ion-implanted after the SiGe layer 12 is formed on the substrate 10. However, the atoms can be ion-implanted onto the silicon substrate 10 before the SiGe layer 12 is formed. Alternatively, the ion-implantation can be performed after the silicon layer 20 is formed on the SiGe layer 12. In these cases, the degree of the silicon relaxation would still increase the silicon relaxation.

As previously explained so far, according to the invention, the silicon layer 20 is expansively strained due to the relaxation of the underlying SiGe layer 12. The relaxation is caused by forming uniformly distributed misfit dislocations in the compressively strained SiGe layer 12. Since the misfit dislocations are nucleated under the heavy influence of the end-of-range interstitial dislocation loops 16, in the invention, the end-of-range interstitial dislocation loops 16 are formed at the desired locations and at the desired density. The uniform distribution of the interstitial dislocation loops 16 is achieved by controllably ion-implanting atoms so as to form uniformly-distributed end-of-range damage to the SiGe layer. Also, the present invention does not require to form a thick multi-layered SiGe layer to avoid thread dislocations. Accordingly, the invention provides time and cost effective methodology for manufacturing an tensilely strained silicon layer.

While the invention has been described in terms of embodiments, those skilled in the art will recognize that the invention can be practiced with modification within the spirit and scope of the appended claims.

Claims

1. A method for manufacturing a semiconductor device, comprising steps of:

forming a compressively strained SiGe layer on a silicon substrate;

ion-implanting atoms to form uniformly distributed interstitial dislocation loops in the SiGe layer; and

annealing to form uniformly distributed misfit dislocations in the SiGe layer.

2. The method of claim 1, wherein the step of forming the SiGe layer comprises a step of epitaxially growing the SiGe layer on the silicon substrate.

3. The method of claim 2, wherein the SiGe layer is formed at a thickness of approximately 100 Å to 10000 Å.

4. The method of claim 1, further comprising a step of forming a tensilely strained silicon layer on the SiGe layer.

5. The method of claim 1, wherein the step of ion-implanting the atoms causes end-of-range damage in the SiGe layer.

6. The method of claim 1, wherein the step of ion-implanting the atoms causes an amorphous layer to be formed in a surface portion of the SiGe layer.

7. The method of claim 1, wherein the atoms are Ge or Si.

8. The method of claim 1, wherein the atoms are ion-implanted at an implantation concentration of approximately 1×1014 atoms/cm2 to 1×1016 atoms/cm2 at implantation energy of approximately 5 KeV to 100 KeV.

9. The method of claim 1, wherein the step of annealing is formed at a temperature of approximately 500° C. to 1100° C. for approximately 1 second to 30 minutes.

10. The method of claim 1, wherein density of the interstitial dislocation loops is approximately 1×105 loops/cm2 to 1×1012 loops/cm2.

11. The method of claim 10, wherein density of the misfit dislocations is approximately 1×105 #/cm2 to 1×1012 #/cm2.

12. A method for forming a semiconductor substrate, comprising the steps of:

forming a SiGe layer on a silicon substrate, wherein the SiGe layer is compressively strained;

controllably ion-implanting atoms onto the SiGe layer causing uniformly distributed end-of-range damage therein;

annealing to form interstitial dislocation loops uniformly distributed in the SiGe layer, wherein the uniformly distributed interstitial dislocation loops nucleate uniformly distributed misfit dislocations in the SiGe layer; and

forming a tensilely strained silicon layer on the SiGe layer.

13. The method of claim 12, wherein the step of ion-implanting the atoms causes an amorphous layer to be formed in a surface portion of the SiGe layer.

14. The method of claim 12, wherein the atoms are Ge or Si.

15. The method of claim 12, wherein the atoms are ion-implanted at an implantation concentration of approximately 1×1014 atoms/cm2 to 1×1016 atoms/cm2 at implantation energy of approximately 5 KeV to 100 KeV.

16. The method of claim 12, wherein the step of annealing is formed at a temperature of approximately 500° C. to 1100° C. for approximately 1 second to 30 minutes.

17-20. (canceled)