Optical Crossover in thin silicon
An arrangement for providing optical crossovers between waveguides formed in an SOI-based structure utilize a patterned geometry in the SOI structure that is selected to reduce the effects of crosstalk in the area where the signals overlap. Preferably, the optical signals are fixed to propagate along orthogonal directions (or are of different wavelengths) to minimize the effects of crosstalk. The geometry of the SOI structure is patterned to include predetermined tapers and/or reflecting surfaces to direct/shape the propagating optical signals. The patterned waveguide regions within the optical crossover region may be formed to include overlying polysilicon segments to further shape the propagating beams and improve the coupling efficiency of the crossover arrangement.
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The present application claims the benefit of U.S. Provisional Application No. 60/555,993, filed Mar. 24, 2004.
TECHNICAL FIELDThe present invention is directed to optical crossovers and, more particularly, to the formation of optical crossovers in integrated photonic circuits utilizing a thin silicon waveguiding layer.
BACKGROUND OF THE INVENTIONIn the design and implementation of many integrated photonic circuits, waveguide intersections (hereinafter “crossovers”) are unavoidable. This is particularly true of designs that involve switch interconnect patterns. However, the intersecting waveguides present an asymmetric index profile at the crossing. This profile disturbs the guided optical mode and excites higher-order optical modes. Since the intersection region is abrupt (i.e., non-adiabatic), it will excite non-guided modes, resulting in crosstalk and loss of optical power within the intersection. Moreover, the losses associated with intersecting planar optical waveguides are of special concern since the loss will be a function of the number of intersections encountered in a particular path, and will therefore vary with path layout.
Many techniques have been proposed for reducing losses at the waveguide crossing. One approach is disclosed in U.S. Pat. No. 4,961,619, issued to Hernandez-Gil et al. on Oct. 9, 1990. In this arrangement, the width of the waveguide is increased or decreased at the crossing junction to modify the optical mode characteristics in that region. This introduces an axial variation in the transverse index of refraction distribution, which allows for better alignment of the electrical fields at the crossing. The Hernandez-Gil et al. arrangement is not very suitable, however, for arrangements where there is a significant difference in refractive index between the guiding material and cladding material, since it requires large tapering regions to adiabatically expand/contract the guided optical mode.
In another prior art reference, U.S. Pat. No. 5,157,756 issued to Nishimoto on Oct. 20, 1972, a peripheral region of low index material is used to surround an island of waveguide material at the center of the crossing/intersecting region. This technique is also of limited use in situations where the refractive index difference is substantial. Thus, a need remains in the prior art for a configuration to provide for optical crossovers in a silicon-based material system where the difference in refractive index between the core and cladding areas may be significant.
SUMMARY OF THE INVENTIONThe present invention is directed to optical crossovers and, more particularly, to the formation of optical crossovers in integrated photonic circuits utilizing a thin silicon waveguiding layer. The implementation of the present invention is particularly well-suited for use in an SOI-based integrated photonic structure, where optical waveguiding areas are formed (at least in part) in a relatively thin (preferably, sub-micron) silicon surface layer (referred to as an “SOI layer”) supported by an underlying insulating layer on a silicon substrate.
In accordance with the present invention, the waveguiding structure within the SOI-based device is particularly shaped in the crossover region to substantially reduce the possibility of crosstalk, while also coupling a significant portion of the propagating signal between an input waveguide portion and its associated output waveguide portion, thus improving the optical throughput along the separate waveguides.
In one embodiment of the present invention, polysilicon regions of predetermined shapes are disposed over selected areas of the waveguides in the crossover region to further minimize signal loss due to crosstalk by reducing the overlap area of the intersecting signals.
The crossover region may comprise a “pinwheel” geometry for reducing the area within which the overlapping signals will intersect. The pinwheel itself may comprise various geometries to accommodate different signal conditions, such as transforming an expanding beam into a collimated beam, a collimated beam into a focused beam, etc.
It is an advantage of the present invention that well-known CMOS processing techniques may be used to pattern and form the desired geometry of the crossover region, simplifying the manufacturing process. Similarly, the ability to deposit and pattern polysilicon in a desired manner is well-known from CMOS processing technology.
Other and further embodiments and advantages of the present invention will become apparent during the course of the following discussion and by reference to the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGSReferring now to the drawings,
FIGS. 1(a) and (b) illustrate a first exemplary embodiment of an optical crossover in an SOI-based structure, formed in accordance with the present invention, with
FIGS. 3(a) and (b) illustrate a variation of the embodiment of
FIGS. 5(a) and (b) illustrate, in a top view and isometric view, an alternative embodiment of the present invention utilizing a polysilicon bridging segment in the optical crossover region;
As briefly mentioned above, relatively thin silicon surface layers (“SOI layers”) are used in SOI-based opto-electronic arrangements to support the propagation of high speed optical signals. As is known in the art, it is possible to perform purely optical and opto-electronic functions within the same SOI structure, using the same CMOS fabrication techniques to form both types of devices. The use of CMOS techniques allows for the size of the optical functions to be greatly reduced (on the order of, for example, an area reduction on the order of 100× to 10,000×) as enabled by the use of high index contrast silicon waveguides. Additionally, when implemented properly, the manipulation of light using the free carrier effect requires no DC power. These advantages enable the optics to approach the same functional block sizes as traditional electronics. Thus, it is possible to have hundreds, if not thousands, of optical/opto-electronic functions on the same integrated circuit die, requiring a similar number of connections to be formed between associated devices. However, until the development of the present invention, as discussed in detail hereinbelow, there has remained a need to form a “multi-level” optical interconnection for this type of optical arrangement, similar to the multi-level metal interconnect structures well-known in today's integrated electronic circuit design, that addresses the various issues associated with the cross over of intersecting optical signals.
In order to minimize the effects of optical crossover, the light beams propagating through waveguides 16 and 18 should be substantially orthogonal to each other (if both of the same operating wavelength), or exhibit different operating wavelengths. For the purposes of the present discussion, the signal propagating along first waveguide 16 will be referred to as optical signal A and the signal propagating along second waveguide 18 will be referred to as optical signal B (where signals A and B will either be orthogonal or at different operating wavelengths).
As shown in
In a similar manner, second optical waveguide 18 is formed to include an input waveguiding section 36 that terminates at corners 38, 40 to allow propagating optical signal B to expand as it traverses crossover region 20 (as shown by the dotted arrows in
In accordance with the present invention, proper patterning of crossover region 20 to include corners at the ends of the input waveguiding sections and the beam-capturing sidewalls along the output waveguiding sections allows for optical signals A and B to intersect within region 20 without experiencing significant crosstalk and signal loss by confining the intersecting area to a relatively small shaded region, as shown. As importantly, it is to be understood that signals A and B are preferably orthogonal or operating at different wavelengths to provide additional isolation between the propagating signals.
As an alternative to the strip waveguide structures discussed above, a “rib” waveguiding structure may be formed in SOI layer 14 to include a pair of intersecting waveguides with a crossover area in accordance with the present invention.
FIGS. 5(a) and (b) illustrate another embodiment of the present invention, in a top view and cut-away side view, respectively. In this embodiment, a pair of waveguides 70 and 72 is used to support the propagation of optical signals A and B within the SOI-based structure of silicon substrate 10, insulating layer 12 and SOI layer 14. In this particular embodiment, a crossover region 74 is defined by forming a first inward tapered region 76 along a first waveguiding section 78 of first optical waveguide 70 and a second outward tapered region 80 along a second waveguiding section 82 of first optical waveguide 70. Crossover region 74 is further defined by the use of a polysilicon bridging portion 84 that is appropriately configured, as shown specifically in
As mentioned above, polysilicon bridging portion 84 is formed to include tapering terminations along first waveguide 70 and second waveguide 72 in order to reduce reflections and more efficiently couple the propagating optical signals into their respective output waveguiding sections 72 and 82.
An efficient crossover region structure has been developed and is illustrated in the various embodiments shown in
In accordance with the present invention, crossover pinwheel region 90 is formed by appropriately patterning and etching SOI layer 14 so as to form a set of reflecting sidewall surfaces to redirect the propagating signals and reduce the area within crossover pinwheel region 90 where the propagating signals will overlap (indicated by the shaded area within region 90). By etching SOI layer 14 to form such surfaces, the difference in refractive index between SOI layer 14 and the adjacent material (for example, “air”, or an insulating material, such as silicon dioxide or silicon nitride), the propagating signal will experience TIR and be re-directed to remain within crossover pinwheel region 90. Referring to
Similarly, incoming optical signal B is shown as coupled into input waveguiding section 96 and thereafter expanding as it encounters corners 108 and 110 at the termination of input waveguiding section 96. Expanding optical signal B will then impinge a third curved sidewall surface 1112, which will collimate and re-direct signal B (as shown by the dotted lines) through crossover pinwheel region 90. Collimated propagating signal B then impinges a fourth curved sidewall surface 114, which functions to focus propagating optical signal B into output waveguiding section 98, as shown in
However, coupling into output waveguiding sections 94 and 98 may encounter reflection and backscattering problems associated with the presence of “corners” at the input to these sections. That is, corners 116, 118 of first output waveguiding section 94 and corners 120, 122 of second output waveguiding section 98 may affect the coupling efficiency between crossover pinwheel region 90 and output waveguiding sections 94, 98.
A top view of an alternative embodiment of the present invention is illustrated in
In a similar fashion, an input collimated optical signal B propagating along input waveguiding section 142 will encounter a third curved sidewall surface 154, which functions to redirect optical signal B and focus the signal toward overlap region 146. As with optical signal A, propagating optical signal B will thereafter expand and then impinge a fourth curved sidewall surface 156, transforming optical signal B into a collimated signal that is directed into a second output waveguiding section 158. As with the embodiments described above, conventional CMOS fabrication techniques may be used process SOI layer 14 to form the desired “expanded pinwheel” geometry for crossover region 144.
Referring back to
In a similar fashion, incoming optical signal B is illustrated as encountering a second curved sidewall surface 258, where the curvature of surface 258 is calculated to accept an incoming collimated signal and convert the collimated wave into a focused beam. In this case, focused optical signal B is thereafter directed into a single mode waveguide 260, waveguide 260 including beam-capturing sidewalls 262 and 264 to improve its coupling efficiency.
A specific embodiment suitable for providing crossover of collimated signals is illustrated in
In contrast to the various embodiments described above, crossover of optical signals may also occur through evanescently coupling a signal from one waveguide to an adjacent waveguide. Evanescent coupling is well-known in the art.
As shown in
An optical tap type of crossover formed in accordance with the present invention is shown in
Although the present invention has been shown and described with respect to several preferred embodiments, it is to be understood that various changes, modifications, additions, etc. may be made in the form and detail thereof without departing from the spirit and scope of the invention as defined by claims appended hereto:
Claims
1. A silicon-on-insulator (SOI)-based optical device including a surface silicon waveguiding layer disposed over an insulating layer covering a silicon substrate, the SOI-based optical device comprising:
- a first optical waveguide for supporting the propagation of a first optical signal;
- a second optical waveguide for supporting the propagation of a second optical signal; and
- an optical crossover region defined by an intersection of the first optical waveguide with the second optical waveguide, the optical crossover region exhibiting a geometry defined to reduce crosstalk between the first and second optical signals in the crossover region and improve optical throughput within the optical crossover region.
2. An SOI-based optical device as defined in claim 1 wherein at least a portion of the first and second optical waveguides exhibit a sub-micron geometry and support the propagation of only a single mode optical signal.
3. An SOI-based optical device as defined in claim 1 wherein the optical crossover region geometry is defined to include beam-capturing waveguide sections at exit areas of the crossover region where the first and second optical signals continue along their associated first and second optical waveguides.
4. An SOI-based optical device as defined in claim 1 wherein the first and second optical waveguides and the optical crossover region are formed within the surface silicon layer of the SOI-based optical device.
5. An SOI-based optical device as defined in claim 1 wherein the first and second optical waveguides are formed, at least in part, as strip waveguides within the surface silicon layer.
6. An SOI-based optical device as defined in claim 1 wherein the first and second optical waveguides are formed, at least in part, as rib waveguides within the surface silicon layer.
7. An SOI-based optical device as defined in claim 1 wherein the SOI-based optical device further comprises a polysilicon layer overlying the surface silicon waveguiding layer.
8. An SOI-based optical device as defined in claim 7 wherein the first and second optical waveguides and the optical crossover region are formed in the surface silicon layer and the polysilicon layer is patterned into a set of four separate segments, a first segment disposed over an input portion of the first waveguide at the entrance to the crossover region, a second segment disposed over an output portion of the first waveguide at the exit of the crossover region, a third segment disposed over an input portion of the second waveguide at the entrance to the crossover region and a fourth segment disposed over an output portion of the second waveguide.
9. An SOI-based optical device as defined in claim 8 wherein at least the second and fourth polysilicon segments are formed to include a tapered end portion at the termination adjacent to the optical crossover region.
10. An SOI-based optical device as defined in claim 7 wherein
- the first optical waveguide is divided into a pair of separate sections at the optical crossover region, a first separate section defined as an input waveguiding section and a second separate section defined as an output waveguiding section, with the second optical waveguide disposed through the gap created between the first and second separate sections; and
- the optical crossover region geometry is defined by the polysilicon layer which is patterned to form a bridging waveguide section between the input waveguiding section and the output waveguiding section of the first optical waveguide.
11. An SOI-based optical device as defined claim 10 wherein the polysilicon bridging waveguide section is patterned to include tapered end terminations along the first and second optical waveguides.
12. An SOI-based optical device as defined in claim 1 wherein the optical crossover region comprises
- a first pair of reflecting surfaces disposed to intercept the first optical signal propagating along the first optical waveguide, an input surface of the first pair of reflecting surfaces for providing a first redirection of the first optical signal into the optical crossover region and an output surface of the first pair of reflecting surfaces for providing a second redirection of the first optical signal out of the optical crossover region and into an output waveguiding section of the first optical waveguide; and
- a second pair of reflecting surfaces disposed to intercept the second optical signal propagating along the second optical waveguide, an input surface of the second pair of reflecting surfaces for providing a first redirection of the second optical signal into the optical crossover region and an output surface of the second pair of reflecting surfaces for providing a second redirection of the second optical signal out of the optical crossover region and into an optical waveguiding section of the second optical waveguide.
13. An SOI-based optical device as defined in claim 12 wherein the first and second input surfaces are curved so as to transform an expanding input signal into a collimated redirected signal.
14. As SOI-based optical device as defined in claim 13 wherein the first and second output surfaces are curved as to transform a collimated input signal into an expanding redirected signal.
15. An SOI-based optical device as defined in claim 12 wherein each of the reflecting surfaces is formed as a 45° reflecting mirror surface.
16. An SOI-based optical device as defined in claim 12 wherein the first and second input surfaces are curved to transform a collimated input signal into a focusing redirected signal.
17. An SOI-based optical device as defined in claim 16 wherein the first and second output surfaces are curved to transform an expanding input signal into a collimated redirected signal.
18. An SOI-based optical device as defined in claim 12 wherein the first and second optical waveguides are formed to include inwardly tapering portions along their respective output waveguiding sections.
19. An SOI-based optical device as defined in claim 12 wherein the device further comprises a plurality of separate rib waveguide segments disposed over input and output sections of the first and second optical waveguides.
20. An SOI-based optical device as defined in claim 19 wherein the rib segments comprise polysilicon segments.
21. An SOI-based optical device as defined in claim 19 wherein the plurality of separate rib segments include tapered end terminations adjacent to the optical crossover region.
22. An SOI-based optical device as defined in claim 1 wherein the optical crossover region is defined as comprising a ring resonator geometry including at least a pair of wavelength-selective rings in association with a transverse optical waveguide for transferring the first optical signal from an input waveguiding section through a first ring resonator and into the transverse optical waveguide, and thereafter through a second ring resonator into an output waveguiding section.
23. An SOI-based optical device as defined in claim 1 wherein the optical crossover region is defined as comprising an evanescently coupled waveguiding geometry of a predetermined length associated with transferring the first optical signal from the first optical waveguide to the second optical waveguide and transferring the second optical signal from the second optical waveguide to the first optical waveguide.
24. An SOI-based optical device as defined in claim 1 wherein the optical crossover region is defined as comprising an optical tap geometry including an input optical tap waveguiding segment, a transverse waveguide and an output tap waveguiding segment, the first optical signal applied as an input to the input optical tap waveguiding segment and thereafter coupled into the transverse waveguide to propagate therealong and then coupled into the output optical tap.
Type: Application
Filed: Mar 24, 2005
Publication Date: Sep 29, 2005
Applicant:
Inventors: David Piede (Allentown, PA), Prakash Gothoskar (Allentown, PA), Margaret Ghiron (Allentown, PA), Robert Montgomery (Easton, PA), Vipulkumar Patel (Breinigsville, PA), Soham Pathak (Allentown, PA), Kalpendu Shastri (Orefield, PA), Katherine Yanushefski (Zionsville, PA)
Application Number: 11/089,478