Electronic component packaging
One embodiment of an electronic component packaging system includes a base adapted for supporting an electronic component and including a mechanically planarized sealing surface, and a lid including a mechanically planarized sealing surface sealed to the planarized sealing surface of the base so as to define a hermetic seal therebetween.
This application is a continuation-in-part of commonly assigned U.S. patent application Ser. No. 10/917,807, filed Aug. 13, 2004, and is hereby incorporated by reference.
BACKGROUNDElectronic components, such as microelectrical mechanical systems (MEMS), may be encapsulated within a package to protect the electronic component from environmental hazards such as humidity, electrical interference, dust, physical contact, and the like. Providing a hermetically sealed atmosphere for the electronic component within a package maybe reduce the effect of such environmental hazards. Some sealing materials used to seal electronic component packages may degrade the life or operation of the component or may result in a non-hermetic seal. Other sealing methods may require the package to undergo heating to a temperature that may damage the electronic components or may create a mis-match between the coefficient of thermal expansion of the package lid and the container. This may stress the electronic component or may result in a failure of the seal between the container and the lid. Still other sealing methods may require welding or high compression forces that are not suited for certain types of packaging materials such as glass or ceramics.
BRIEF DESCRIPTION OF THE DRAWINGS
The process may include enclosing container 10 and lid 38 in an enclosure 42 and then filling or creating within enclosure 42 a plasma atmosphere 44 by the addition of energy at a radio frequency in the range of 10 kHz to 14 MHz. Plasma atmosphere 44 may be formed of nitrogen, oxygen, argon, a mixture thereof, or any other suitable component or components. As an alternative, the sealing surfaces can be activated under an ambient plasma with air, nitrogen, oxygen, or other suitable gas. Subjecting container 10 and lid 38 to plasma atmosphere 44 may activate sealing surface 46 of lid 38 and sealing surface 16 of container 10 so that the sealing surfaces will form a covalent bond therebetween when corresponding sealing surfaces 46 and 16 are positioned in contact with one another. Exposure of container 10 and lid 38 to plasma atmosphere 44 may be conducted at any temperature or pressure suitable to activate the sealing surfaces but in one exemplary embodiment, the pressure within enclosure 42 may be in a range of 50 mtorr to 1 atmosphere and the temperature within enclosure 42 may be in a range of 25 to 100 degrees Celsius, wherein container 10 and lid 38 may be exposed to plasma atmosphere 44 for a time period in a range of 10 to 100 seconds.
The process may include hydrating the sealing surface 46 of lid 38 or sealing surface 16 of container 10. The hydration process can be done with water plasma in a plasma chamber under vacuum, or in an open environment under an ambient water plasma. A trace of water vapor, such as vaporized deionized water, can be drawn into the process gas, such as nitrogen, oxygen, or argon, to form a water plasma. The hydration process results in a higher density of silanol groups on the sealing surface 46 of lid 38 and sealing surface 16 of container 10 so that the sealing surfaces will form a strong covalent bond therebetween when corresponding sealing surfaces 46 and 16 are positioned in contact with one another. Due to the plasma activation and hydration process of the sealing surfaces of container 10 and lid 38, the container and the lid may each be manufactured of a unique material. For example, due to the plasma activation and hydration process, a glass or a silicon lid 38 may be bonded to a ceramic container 10 at a temperature of at most 100 degrees Celsius at ambient pressure to form a hermetic seal therebetween.
Lid 38 and container 10 are then plasma activated and hydrated to prepare the sealing surfaces 50a and 46 for covalent bonding. Lid 38 is then contacted with container 10 such that sealing surface 46 of lid 38 contacts bonding layer 50 of container 10 so as to form a hermetic seal of covalent bonding around perimeter 18 of container 10 and around perimeter 48 of lid 38, wherein the perimeter of the base substantially mates in size and shape with the perimeter of the lid. In other words, an exposed mating surface of container 10, which may comprise an exposed surface 50a of bonding layer 50, is contacted with an exposed mating surface 46 of lid 38 to form a bond therebetween. The perimeter of each of container 10 and lid 38 may be round, square, rectangular, oval, or any shape as desired. A light compression force, such as a force of approximately 50 Newtons, may be applied to hold container 10 and lid 38 together for a sufficient time, such as a time period of approximately 10 seconds, for container 10 and lid 38 to seal to one another. The contacting may be conducted at a pressure in a range of approximately 100 mtorr to 1 atmosphere, and at a temperature in a range of approximately 25 to 200 degrees Celsius. Because the contacting pressure and temperature are relatively low, the package may be sealed with substantially no mis-match between the coefficient of thermal expansion of the lid and the container and with substantially no heating of the microelectronic device to a temperature that may damage the electronic component.
Still referring to
Other variations and modifications of the concepts described herein may be utilized and fall within the scope of the claims below.
Claims
1. An electronic component packaging system, comprising:
- a base adapted for supporting an electronic component and including a mechanically planarized sealing surface; and
- a lid including a mechanically planarized sealing surface sealed to said planarized sealing surface of said base so as to define a hermetic seal therebetween.
2. The system of claim 1 wherein said hermetic seal comprises covalent bonding.
3. The system of claim 1 further comprising a non-solder bonding layer positioned between said planarized sealing surface of said base and said planarized sealing surface of said lid.
4. The system of claim 1 wherein said lid and said base are each chosen from one of a metal, a metal alloy, ceramic, plastic, silicon, and glass.
5. The system of claim 1 wherein said hermetic seal is created with a hydration enhanced bonding process.
6. The system of claim 1 wherein said electronic component is a MEMS die.
7. The system of claim 1 wherein said planarized sealing surface of said base and said planarized sealing surface of said lid each have a smoothness of at most a 20 Angstroms rms surface roughness over a 2 micrometer by 2 micrometer area.
8. The system of claim 3 wherein said bonding layer is chosen from one of oxide, glass frit, and amorphous silicon.
9. The system of claim 1 wherein said hermetic seal is created with a plasma enhanced bonding process.
10. The system of claim 1 wherein said base and said lid hermetically seal said electronic component.
11. The system of claim 1 wherein said planarized sealing surface of said base extends around a perimeter of said base and said planarized sealing surface of said lid extends around a perimeter of said lid, and wherein said perimeter of said base substantially mates in size and shape with said perimeter of said lid.
12. A process of plasma bonding an electronic component package, comprising:
- activating an electronic component container sealing surface and a lid sealing surface with a plasma; and
- contacting the electronic component container sealing surface and the lid sealing surface to form a hermetic seal.
13. The process of claim 12 further comprising, prior to said activating, depositing a bonding layer on said electronic component container sealing surface.
14. The process of claim 12 further comprising, prior to said activating, polishing said electronic component container sealing surface.
15. The process of claim 12 further comprising, prior to said activating, attaching said electronic component to said electronic component container.
16. The process of claim 12 further comprising, prior to said activating, depositing a bonding layer on said lid sealing surface.
17. The process of claim 12 further comprising, prior to said activating, polishing said lid sealing surface.
18. The process of claim 12 wherein said contacting is conducted at a temperature of less than 200 degrees Celsius.
19. The process of claim 12 wherein said plasma is chosen from one of nitrogen, oxygen, argon and a mixture thereof.
20. The process of claim 14 wherein said polishing said electronic component container sealing surface is conducted to a smoothness of at most 20 Angstroms rms surface roughness over a 2 micrometer by 2 micrometer area.
21. The process of claim 17 wherein said polishing said lid sealing surface is conducted to a smoothness of at most 20 Angstroms rms surface roughness over a 2 micrometer by 2 micrometer area.
22. The process of claim 14 wherein said polishing is conducted with a slurry on a polishing wheel.
23. The process of claim 17 wherein said polishing is conducted with a slurry on a polishing wheel.
24. The process of claim 12 further comprising, prior to said activating, attaching an electronic component to said electronic component container.
25. The process of claim 12 wherein said process is conducted at atmospheric pressure.
26. The process of claim 12 wherein said process is conducted in a vacuum.
27. The process of claim 2 further comprising, prior to said contacting, hydrating at leas one of said container sealing surface and said lid sealing surface with a water plasma.
28. An electronic component package, comprising:
- a lid;
- a container adapted for supporting an electronic component; and
- a non-solder bonding layer that bonds said lid and said container together.
29. The package of claim 28 wherein said bonding layer defines a hermetic seal between said lid and said container.
30. The package of claim 28 wherein said bonding layer comprises a non-organic and a non-epoxy material.
31. The package of claim 28 wherein said lid and said container are each chosen from one of a metal, a metal alloy, ceramic, plastic, silicon, and glass.
32. The package of claim 28 further comprising an electronic die sealed between said lid and said container.
33. The package of claim 28 wherein said non-solder bonding layer includes a planarized bonding surface.
34. The package of claim 28 wherein said bonding layer is plasma activated prior to bonding said lid and said container together, said plasma activation chosen from one of activation inside a plasma chamber and activation under ambient plasma conditions.
35. The package of claim 28 wherein said bonding layer is hydrated prior to bonding said lid and said container together, wherein said hydration is chosen from one of hydration in deionized water and hydration in a water plasma.
36. The package of claim 28 wherein said bonding layer is chosen from one of oxide, glass frit, and amorphous silicon.
37. A process of sealing an electronic component package, comprising:
- contacting a sealing surface of a first package structure to a sealing surface of a second package structure at a temperature of less than 200 degrees Celsius so as to form a hermetic seal between said first and second package structures.
38. The process of claim 37 further comprising, prior to said contacting, hydrating one of said sealing surface of said first package structure and said sealing surface of said second package structure.
39. The process of claim 37 further comprising, prior to said contacting, plasma activating said sealing surface of said first package structure and said sealing surface of said second package structure.
40. The process of claim 37 further comprising, prior to said contacting, polishing said sealing surface of said first package structure and said sealing surface of said second package structure.
41. The process of claim 37 wherein said sealing surface of said first package structure comprises an exposed surface of a bonding material on said first package structure.
42. The process of claim 37 wherein said process is conducted at a temperature of at most 100 degrees Celsius.
43. The process of claim 37 wherein said hermetic seal comprises covalent bonding.
44. A method of sealing an electronic package, comprising:
- applying a sealing material to at least one of a cap and a base;
- mechanically planarizing a mating surface of said cap and a mating surface of said base; and
- contacting said mating surface of said cap and said mating surface of said base such that said sealing material seals said cap and said base together.
45. The method of claim 44 wherein said sealing material is positioned on said cap and wherein said mating surface of said cap comprises an exposed surface of said sealing material on said cap.
46. The method of claim 44 wherein said sealing material is positioned on said base and wherein said mating surface of said base comprises an exposed surface of said sealing material on said base.
47. The method of claim 44 wherein said sealing material is a non-epoxy, non-solder, non-organic material.
48. The method of claim 44 wherein said cap and said base are hermetically sealed together.
49. The method of claim 44 wherein said process takes place at atmospheric pressure and ambient temperature.
50. The method of claim 44 further comprising, prior to said contacting, plasma activating said mating surface of said cap and said mating surface of said base.
51. The method of claim 44 further comprising, prior to said contacting, hydrating at least one of said mating surface of said cap and said mating surface of said base.
52. An electronic device package, comprising:
- means for mounting an electronic device; and
- means for capping said means for mounting, said means for capping hermetically sealed to said means for mounting by a plasma activated seal.
Type: Application
Filed: Dec 14, 2004
Publication Date: Feb 16, 2006
Inventors: Chien-Hua Chen (Corvallis, OR), Troy Schwinabart (Corvallis, OR), David Craig (Albany, OR)
Application Number: 11/011,426
International Classification: H01L 23/02 (20060101); H01L 21/52 (20060101);