METHOD FOR PHOTOLITHOGRAPHY IN SEMICONDUCTOR MANUFACTURING
The present disclosure relates generally to the manufacturing of semiconductor devices. In one example, a method for forming a portion of a semiconductor device includes forming a photo sensitive layer over a substrate, developing the photo sensitive layer to expose a portion of the substrate and to create a seed layer from at least a portion of the photo sensitive layer remaining after the developing, forming an etch stop layer only on the seed layer, and etching the substrate using the etch stop layer as a mask.
Latest Taiwan Semiconductor Manufacturing Company, Ltd. Patents:
- SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING OXIDE FILM AND METHOD FOR SUPPRESSING GENERATION OF LEAKAGE CURRENT
- SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- SYSTEM AND SEMICONDUCTOR DEVICE THEREIN
- METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE
- SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
This application claims priority from U.S. Provisional Patent Application Ser. No. 60/731,828 (Attorney Docket No. 24061.722), filed on Oct. 31, 2005, which is incorporated by reference in its entirety.
BACKGROUNDOne of the factors involved in the manufacture of semiconductor devices is a depth of focus (DOF) window. Generally, an effective DOF will cover all the variations of photoresist. thickness, local substrate topology step height, and wafer center and edge step height differences. An effective DOF facilitates manufacturing a semiconductor device within a desired critical dimension (CD) specification with little or no scum or top loss defects.
Problems may occur with photoresist that is thicker than the DOF. For example, if the DOF is less than the thickness of the photoresist layer plus step height variation, scum or CD errors may occur in some of the patterns formed on the semiconductor devices. Therefore, thin layers of photoresist may be desired to counter this problem. Such thin photoresist layers may also be desirable for low dosage exposure tools, such as an e-beam or extreme ultraviolet (EUV) tools, as they may improve resist contrast, resolution, and dissolution. Moreover, for mass production purposes, the combination of thin photoresist layers and low dosage exposure tools can increase the throughput of semiconductor devices.
However, the use of thin photoresist layers can have drawbacks. For example, a thin photoresist layer may adversely affect etching performance if it does not provide sufficient protection during the etch process. To resolve this problem, a two step process may be used. For example, a relatively thin photo sensitive layer may be formed over a thick buffer layer. The photo sensitive layer is developed to form a predefined pattern, and the buffer layer is then etched to correspond to the pattern formed by the photo sensitive layer. The buffer layer then serves as an etch stop layer during etching of the substrate. Accordingly, two removal steps (developing and etching) are needed to reach the substrate prior to etching the substrate.
Therefore, what is needed is a new and improved photolithography process to address these drawbacks.
BRIEF DESCRIPTION OF THE DRAWINGSAspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It is emphasized that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
It is to be understood that the following disclosure provides many different embodiments, or examples, for implementing different features of the disclosure. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. Moreover, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed interposing the first and second features, such that the first and second features may not be in direct contact.
Referring to
Referring to step 102 and with additional reference to
The formation of the photo sensitive layer 206 includes the deposition of a resist material (e.g., a positive resist or a negative resist); a polymer layer; and/or any other suitable materials. In the present example, the photo sensitive layer 206 is formed from a positive photoresist material and has a thickness of between 100 and 2000 angstroms. The resist material may be deposited and distributed over the surface of the layer 204 by a spin-on coating process and/or other processes. In one example, the photo sensitive layer 206 may be a chemically amplified resist that employs acid catalysis.
In step 104 and with additional reference to
In step 106 and with additional reference to
In one example, the layer 500 may be formed by exposing the seed layer 400 to a solution with a PH value of less than 7 or, in another example, with a PH value of 7 or greater. In still another example, the second layer 500 may be developed in a plasma environment using a process such as CVD. In yet another example, laser pulse vaporization may be utilized to selectively deposit the layer 500 using the seed layer 400.
The layer 500 may be formed by the use of long-chain molecules or long-chain polymer(s) in the Z direction as indicated in
Referring to step 108 and with additional reference to
In step 110 and with additional reference to
Accordingly, using the method 100, an etch stop layer may be formed using a single development/etching step. It is understood that additional steps may be performed in order to complete the semiconductor device 200. Since those additional steps are known in the art and may vary depending on the specifics of the semiconductor device 200 being formed, they will not be further described herein. Furthermore, it is noted that many variations of the above example are contemplated herein. In one example, instead of utilizing the second layer 204 for etching purposes, it may be used for implanting purposes. In a second example, the second layer 204 may be a separate layer formed over the seed layer 400. In a third example, the second layer 204 may include the seed layer 400. Accordingly, a variety of modifications are contemplated by this disclosure.
Referring to
In step 802 and with additional reference to
The formation of the photo sensitive layer 906 includes the deposition of a resist material (e.g., a positive resist or a negative resist); a polymer layer; and/or any other suitable materials. In the present example, the photo sensitive layer 906 is formed from a negative photoresist material and has a thickness of between about 100 and about 2000 angstroms. The resist material may be deposited and distributed over the surface of the layer 904 by a spin-on coating process and/or other processes.
In step 804 and with reference to
In step 806 and with continued reference to
In step 808 and with additional reference to
In step 810 and with additional reference to
Referring to
Although only a few exemplary embodiments of this disclosure have been described in details above, those skilled in the art will readily appreciate that many modifications are possible in the exemplary embodiments without materially departing from the novel teachings and advantages of this disclosure. Also, features illustrated and discussed above with respect to some embodiments can be combined with features illustrated and discussed above with respect to other embodiments. Accordingly, all such modifications are intended to be included within the scope of this disclosure.
Claims
1. A method for forming a portion of a semiconductor device, comprising:
- forming a photo sensitive layer over a substrate;
- developing the photo sensitive layer to expose a portion of the substrate;
- creating a seed layer from at least a portion of the photo sensitive layer remaining after the developing;
- growing an etch stop layer only on and from the seed layer; and
- etching the substrate using the etch stop layer as a mask.
2. The method of claim 1 wherein the etch stop layer is thicker than the seed layer.
3. The method of claim 1 wherein the etch stop layer is harder than the seed layer.
4. The method of claim 1 wherein the developed photo sensitive layer itself works as the seed layer.
5. The method of claim 1 wherein the forming includes using the seed layer as electrode plating to grow the etch stop layer.
6. The method of claim 1 wherein the forming includes dipping the seed layer in a solution.
7. The method of claim 5 wherein the solution has a PH that is not greater than about 7.
8. The method of claim 5 wherein the solution has a PH that is greater than about 7.
9. The method of claim 1 wherein the forming includes the formation of long-chain molecules.
10. The method of claim 1 wherein the forming includes the formation of one or more long-chain polymers.
11. The method of claim 1 wherein the forming includes the formation of at least one carbon nano tube.
12. The method of claim 1 wherein the forming includes the formation of at least one ZnO nano tube.
13. The method of claim 1 wherein the forming includes the formation of aligned long-chain molecules.
14. The method of claim 1 wherein the forming includes the formation of one or more aligned long-chain polymers.
15. The method of claim 1 wherein the etch stop layer serves as an implantation mask.
16. A method for forming a portion of a semiconductor device, comprising:
- forming a photo sensitive layer over a substrate;
- developing the photo sensitive layer to expose a portion of the substrate, wherein the exposed portion of the substrate forms a seed layer;
- growing an etch stop layer from the seed layer and only on the seed layer; and
- etching the substrate using the etch stop layer as a mask.
17. The method of claim 16 further comprising removing a remaining portion of the photo sensitive layer after forming the etch stop layer.
18. The method of claim 16 further comprising removing a remaining portion of the photo sensitive layer prior to forming the etch stop layer.
19. The method of claim 16 wherein forming the photo sensitive layer over the substrate includes selecting a negative photoresist for use as the photo sensitive layer.
20. The method of claim 16 wherein forming the photo sensitive layer over the substrate includes selecting a positive photoresist for use as the photo sensitive layer.
21. A method for forming a partial semiconductor device, comprising:
- providing a photo sensitive layer over a substrate;
- patterning the photosensitive layer using a predefined pattern;
- developing the photo sensitive layer to form a seed layer, wherein the seed layer corresponds to the predefined pattern and wherein the seed layer has a first thickness;
- forming a thicker layer only over the seed layer by creating a plurality of long-chain molecules arranged to be substantially perpendicular to the seed layer, wherein the thicker layer has a second thickness that is greater than the first thickness.
22. The method of claim 21 wherein no material is removed from the partial semiconductor device between the steps of developing the photo sensitive layer and etching the substrate.
23. The method of claim 21 further comprising etching the substrate using the thicker layer as an etch mask layer.
24. The method of claim 21 further comprising implanting the substrate using the thicker layer as an implantation layer.
Type: Application
Filed: Feb 3, 2006
Publication Date: May 3, 2007
Applicant: Taiwan Semiconductor Manufacturing Company, Ltd. (Hsin-Chu)
Inventor: Chin-Hsiang Lin (Hsinchu)
Application Number: 11/347,513
International Classification: C23F 1/00 (20060101); H01L 21/302 (20060101); B44C 1/22 (20060101); H01L 21/461 (20060101);