Patents Assigned to Taiwan Semiconductor Manufacturing Company, Ltd.
  • Patent number: 10332896
    Abstract: A device includes a Static Random Access Memory (SRAM) array, and an SRAM cell edge region abutting the SRAM array. The SRAM array and the SRAM cell edge region in combination include first gate electrodes having a uniform pitch. A word line driver abuts the SRAM cell edge region. The word line driver includes second gate electrodes, and the first gate electrodes have lengthwise directions aligned to lengthwise directions of respective ones of the second gate electrodes.
    Type: Grant
    Filed: January 15, 2018
    Date of Patent: June 25, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Fang Chen, Jhon Jhy Liaw, Min-Chang Liang, Ren-Fen Tsui, Shih-Chi Fu, Yen-Huei Chen
  • Patent number: 10332838
    Abstract: A method of forming a semiconductor structure includes providing a substrate; forming a low-k dielectric layer over the substrate; embedding a conductive wiring into the low-k dielectric layer; and thermal soaking the conductive wiring in a carbon-containing silane-based chemical to form a barrier layer on the conductive wiring. A lining barrier layer is formed in the opening for embedding the conductive wiring. The lining barrier layer may comprise same materials as the barrier layer, and the lining barrier layer may be recessed before forming the barrier layer and may contain a metal that can be silicided.
    Type: Grant
    Filed: January 2, 2018
    Date of Patent: June 25, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Hai-Ching Chen, Tien-I Bao
  • Patent number: 10332836
    Abstract: An integrated circuit structure includes a first low-k dielectric layer having a first k value, and a second low-k dielectric layer having a second k value lower than the first k value. The second low-k dielectric layer is overlying the first low-k dielectric layer. A dual damascene structure includes a via with a portion in the first low-k dielectric layer, and a metal line over and joined to the via. The metal line includes a portion in the second low-k dielectric layer.
    Type: Grant
    Filed: December 4, 2017
    Date of Patent: June 25, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chao-Chun Wang, Chung-Chi Ko, Po-Cheng Shih
  • Patent number: 10332841
    Abstract: A semiconductor device and methods of forming are provided. The method includes bonding a second die to a surface of a first die. The method includes encapsulating the second die in an isolation material, and forming a through via extending through the isolation material. The method also includes forming a first passive device in the isolation material.
    Type: Grant
    Filed: July 14, 2017
    Date of Patent: June 25, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Chuei-Tang Wang
  • Patent number: 10333001
    Abstract: A fin structure disposed over a substrate and a method of forming a fin structure are disclosed. The fin structure includes a mesa, a channel disposed over the mesa, and a convex-shaped feature disposed between the channel and the mesa. The mesa has a first semiconductor material, and the channel has a second semiconductor material different from the first semiconductor material. The convex-shaped feature is stepped-shaped, stair-shaped, or ladder-shaped. The convex-shaped feature includes a first isolation feature disposed between the channel and the mesa, and a second isolation feature disposed between the channel and the first isolation feature. The first isolation feature is U-shaped, and the second isolation feature is rectangular-shaped. A portion of the second isolation feature is surrounded by the channel and another portion of the second isolation feature is surrounded by the first isolation feature.
    Type: Grant
    Filed: March 26, 2018
    Date of Patent: June 25, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Gin-Chen Huang, Ching-Hong Jiang, Neng-Kuo Chen, Sey-Ping Sun, Clement Hsingjen Wann
  • Patent number: 10332823
    Abstract: Packages for semiconductor devices, packaged semiconductor devices, and methods of cooling packaged semiconductor devices are disclosed. In some embodiments, a package for a semiconductor device includes a substrate including a semiconductor device mounting region, a cover coupled to a perimeter of the substrate, and members disposed between the substrate and the cover. The package includes partitions, with each partition being disposed between two adjacent members. The package includes a fluid inlet port coupled to the cover, and a fluid outlet port coupled to one of the partitions.
    Type: Grant
    Filed: December 17, 2018
    Date of Patent: June 25, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kim Hong Chen, Szu-Po Huang, Shin-Puu Jeng, Wensen Hung
  • Patent number: 10332991
    Abstract: Embodiments relate to integrated circuit fabrication, and more particularly to a metal gate electrode. An exemplary structure for a semiconductor device comprises a substrate comprising a major surface; a first gate electrode on the major surface comprising a first layer of multi-layer material; a first dielectric material adjacent to one side of the first gate electrode; and a second dielectric material adjacent to the other 3 sides of the first gate electrode, wherein the first dielectric material and the second dielectric material collectively surround the first gate electrode.
    Type: Grant
    Filed: June 4, 2018
    Date of Patent: June 25, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jr-Jung Lin, Chih-Han Lin, Jin-Aun Ng, Ming-Ching Chang, Chao-Cheng Chen
  • Patent number: 10325879
    Abstract: An embodiment package includes a first fan-out tier having a first device die, a molding compound extending along sidewalls of the first device die, and a through intervia (TIV) extending through the molding compound. One or more first fan-out redistribution layers (RDLs) are disposed over the first fan-out tier and bonded to the first device die. A second fan-out tier having a second device die is disposed over the one or more first fan-out RDLs. The one or more first fan-out RDLs electrically connects the first and second device dies. The TIV electrically connects the one or more first fan-out RDLs to one or more second fan-out RDLs. The package further includes a plurality of external connectors at least partially disposed in the one or more second fan-out RDLs. The plurality of external connectors are further disposed on conductive features in the one or more second fan-out RDLs.
    Type: Grant
    Filed: August 20, 2018
    Date of Patent: June 18, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Kuo-Chung Yee
  • Patent number: 10325639
    Abstract: An initialization process is disclosed for a perpendicular magnetic tunnel junction (p-MTJ) wherein the switching error rate is reduced from a typical range of 30-100 ppm to less than 10 ppm. In one embodiment, an in-plane magnetic field is applied after a final anneal step is performed during memory device fabrication such that all magnetizations in the free layer, and AP1 and AP2 pinned layers are temporarily aligned “in-plane”. After the applied field is removed, interfacial perpendicular magnetic anisotropy (PMA) at a tunnel barrier/AP1 interface induces a single AP1 magnetic domain with a magnetization in a first vertical direction. Interfacial PMA at a FL/tunnel barrier interface affords a single FL domain with magnetization in the first direction or opposite thereto. AP2 magnetization is opposite to the first direction as a result of antiferromagnetic coupling with the AP1 layer. Alternatively, a perpendicular-to-plane magnetic field may be applied for initialization.
    Type: Grant
    Filed: November 20, 2017
    Date of Patent: June 18, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yuan-Jen Lee, Guenole Jan, Huanlong Liu, Jian Zhu
  • Patent number: 10325853
    Abstract: A semiconductor device and method for forming the semiconductor device is provided. The semiconductor device includes an integrated circuit having through vias adjacent to the integrated circuit die, wherein a molding compound is interposed between the integrated circuit die and the through vias. The through vias have a projection extending through a patterned layer, and the through vias may be offset from a surface of the patterned layer. The recess may be formed by selectively removing a seed layer used to form the through vias.
    Type: Grant
    Filed: April 24, 2015
    Date of Patent: June 18, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Chung-Shi Liu, Chih-Wei Lin, Ming-Da Cheng
  • Patent number: 10325909
    Abstract: An integrated circuit (IC) chip embodiment includes first and second ROM cells arranged in a same row of a ROM array. The first and second ROM cells include first portions of first and second gate structures, respectively. The IC chip further includes a strap cell disposed between the first and second ROM cells. The strap cell includes second portions of the first and second gate structures. The first gate structure is physically separated from the second gate structure.
    Type: Grant
    Filed: February 12, 2018
    Date of Patent: June 18, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventor: Jhon Jhy Liaw
  • Patent number: 10325816
    Abstract: The present disclosure provides an embodiment of a fin-like field-effect transistor (FinFET) device. The device includes a substrate having a first gate region, a first fin structure over the substrate in the first gate region. The first fin structure includes an upper semiconductor material member, a lower semiconductor material member, surrounded by an oxide feature and a liner wrapping around the oxide feature of the lower semiconductor material member, and extending upwards to wrap around a lower portion of the upper semiconductor material member. The device also includes a dielectric layer laterally proximate to an upper portion of the upper semiconductor material member. Therefore the upper semiconductor material member includes a middle portion that is neither laterally proximate to the dielectric layer nor wrapped by the liner.
    Type: Grant
    Filed: June 29, 2017
    Date of Patent: June 18, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Kuo-Cheng Ching, Ka-Hing Fung, Chih-Sheng Chang, Zhiqiang Wu
  • Patent number: 10325906
    Abstract: An electrostatic discharge (ESD) testing structure includes a measurement device in a first die. The ESD testing structure further includes a fuse in a second die. The ESD testing structure further includes a plurality of bonds electrically connecting the first die to the second die, wherein a first bond of the plurality of bonds electrically connects the fuse to the measurement device.
    Type: Grant
    Filed: September 23, 2016
    Date of Patent: June 18, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Tzu-Heng Chang, Jen-Chou Tseng, Ming-Hsiang Song
  • Patent number: 10325865
    Abstract: A semiconductor structure includes a die, a molding surrounding the die, an interconnect structure disposed over the die and the molding, and a first seal ring. The interconnect structure includes a dielectric layer and a conductive member disposed within the dielectric layer. The first seal ring is disposed within the dielectric layer and disposed over the molding.
    Type: Grant
    Filed: September 5, 2018
    Date of Patent: June 18, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Ying-Ju Chen, Hsien-Wei Chen, Ming-Fa Chen
  • Patent number: 10325883
    Abstract: A method includes attaching a first semiconductor package on a carrier, wherein the first semiconductor package comprises a plurality of stacked semiconductor dies and a plurality of contact pads, depositing a first molding compound layer over the carrier, wherein the first semiconductor package is embedded in the first molding compound layer, forming a plurality of vias over the plurality of contact pads, attaching a semiconductor die on the first molding compound layer, depositing a second molding compound layer over the carrier, wherein the semiconductor die and the plurality of vias are embedded in the second molding compound layer, forming an interconnect structure over the second molding compound layer and forming a plurality of bumps over the interconnect structure.
    Type: Grant
    Filed: November 10, 2017
    Date of Patent: June 18, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sheng-Hsiang Chiu, Meng-Tse Chen, Ching-Hua Hsieh, Chung-Shi Liu, Sheng-Feng Weng, Ming-Da Cheng
  • Patent number: 10325910
    Abstract: A semiconductor structure with a MISFET and a HEMT region includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A third III-V compound layer is disposed on the second III-V compound layer is different from the second III-V compound layer in composition. A source feature and a drain feature are disposed in each of the MISFET and HEMT regions on the third III-V compound layer. A gate electrode is disposed over the second III-V compound layer between the source feature and the drain feature. A gate dielectric layer is disposed under the gate electrode in the MISFET region but above the top surface of the third III-V compound layer.
    Type: Grant
    Filed: March 5, 2018
    Date of Patent: June 18, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chung-Yen Chou, Sheng-De Liu, Fu-Chih Yang, Shih-Chang Liu, Chia-Shiung Tsai
  • Patent number: 10326003
    Abstract: A finFET device and methods of forming a finFET device are provided. The method includes forming a first gate spacer is formed over a dummy gate of a fin field effect transistor (finFET). The method also includes performing a carbon plasma doping of the first gate spacer. The method also includes forming a plurality of source/drain regions, where a source/drain region is disposed on opposite sides of the dummy gate. The method also includes removing dummy gate.
    Type: Grant
    Filed: March 29, 2017
    Date of Patent: June 18, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Cheng Chen, Huicheng Chang, Liang-Yin Chen, Chun-Feng Nieh, Li-Ting Wang, Wan-Yi Kao, Chia-Ling Chan
  • Patent number: 10326021
    Abstract: An embodiment is a FinFET device. The FinFET device comprises a fin, a first source/drain region, a second source/drain region, and a channel region. The fin is raised above a substrate. The first source/drain region and the second source/drain region are in the fin. The channel region is laterally between the first and second source/drain regions. The channel region has facets that are not parallel and not perpendicular to a top surface of the substrate.
    Type: Grant
    Filed: May 29, 2018
    Date of Patent: June 18, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ta-Chun Ma, Cheng-Hsien Wu, Chih-Hsin Ko, Clement Hsingjen Wann
  • Patent number: 10326491
    Abstract: A transceiving device includes: a signal port, arranged to relay an RF input signal during a first mode, and to relay an RF output signal during a second mode different from the first mode; a receiver, coupled to the signal port; a transmitter, coupled to the signal port; and a first adjustable capacitor, coupled to the signal port. The second adjustable capacitor is arranged to have a first capacitance during the first mode such that the RF input signal is received by the receiver, and the second adjustable capacitor is arranged to have a second capacitance during the second mode such that the RF output signal is transmitted to the signal port.
    Type: Grant
    Filed: November 1, 2017
    Date of Patent: June 18, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Feng Wei Kuo, Huan-Neng Chen, Lan-Chou Cho, Chewn-Pu Jou, Robert Bogdan Staszewski, Masoud Babaie
  • Patent number: 10316411
    Abstract: An injector for forming films respectively on a stack of wafers is provided. The injector includes a plurality of hole structures. Every adjacent two of the wafers have therebetween a wafer spacing, and each of the wafers has a working surface. The hole structures respectively correspond to the respective wafer spacings. The working surface and a respective hole structure have therebetween a parallel distance. The parallel distance is larger than a half of the wafer spacing. A wafer processing apparatus and a method for forming films respectively on a stack of wafers are also provided.
    Type: Grant
    Filed: March 23, 2015
    Date of Patent: June 11, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Wei-Che Hsieh, Brian Wang, Tze-Liang Lee, Yi-Hung Lin, Hao-Ming Lien, Shiang-Rung Tsai, Tai-Chun Huang