Circular Test Pads on Scribe Street Area
A semiconductor wafer design and process having test pads (36) reducing cracks generated during the wafer saw process from extending into and damaging adjacent die. The present invention provides a plurality of circular test pads (36) in a wafer scribe street (34) such that any cracks generated in the test pad during wafer saw self terminate in the periphery of the circular test pad. By providing a curved test pad periphery, cracks will tend to propagate along the edges of the test pads and self terminate therein. The circular test pads avoid any sharp corners as is conventional in rectangular test pads which tend to facilitate the extension of cracks from corners to extend into the adjacent wafer die (32). The present invention utilizes existing semiconductor fab processing and utilizes new reticle sets to define the curved test pads.
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This application is a divisional of co-pending application Ser. No. 10/145,442 filed May 14, 2002, the contents of which are herein incorporated by reference in its entirety.
FIELD OF THE INVENTIONThe present invention is generally related to semiconductor wafer processing, and more particularly to scribe streets extending between formed active areas and test pads located thereon for testing the active devices.
BACKGROUND OF THE INVENTIONIntegrated circuits are typically defined on a semiconductor wafer using a variety of wafer fab processes. Each of the formed active circuit areas, later forming integrated circuits after dicing and packaging, are physically separated from one another on the wafer by an elongated region commonly referred to as a scribe street. These wafers are typically cut along the scribe street after circuit testing using a conventional saw process.
In addition to the active circuitry formed on the semiconductor wafer, test pads are also provided to facilitate the active testing of the formed circuitry prior to the wafer saw process. Typically, these test pads are formed in the scribe streets, and are cut away during the wafer saw process after the wafer level die test.
Referring to
With the improvements in silicon technology, scribe street widths are being shrunk to increase the number of chips per wafer that can be manufactured at wafer fab. Referring to
It is desired that an improved wafer fab design of the test pads 16 and process which reduces the generation of cracks during wafer saw which damage active circuit areas, and increases wafer yield.
SUMMARY OF THE INVENTIONThe present invention achieves technical advantages as a wafer design and process utilizing circular test pads on the scribe street such that any cracks generated in the circular test pad self terminate along the edge of the circular test pad, thereby increasing wafer yield.
According to the present invention, the test pads are designed to have a curved profile, and preferably a round periphery. Advantageously, as this round test pad is cut during wafer saw, the cracks will not extend from a sharp corner into the active die, such as is typical with the square test pads conventionally provided. Advantageously, this solution is straight forward, and does not require any major change in the wafer fab process. Rather, only reticle sets will be replaced, and no additional wafer fab steps are introduced. In addition, this solution does not require a huge amount of investment to eliminate a potential problem at wafer saw in the assembly packaging site as we move to narrowed scribe street design.
The present invention reduces yield loss at wafer saw due to cracks propagating towards the active circuitry of the die. The present invention reduces reliability risks since cracks that have initiated from the sawing process will eventually be stopped by the design of the test pads.
BRIEF DESCRIPTION OF THE DRAWINGS
Referring now to
Advantageously, as shown in
Referring now to
This present invention is straight forward, and does not require any major change in the wafer fab process. Rather, only the reticle sets utilized to define the test pads are changed, and no additional wafer fab processes are introduced, as shown in
The present invention advantageously prevents yield loss at wafer saw due to cracks which otherwise tend to propagate towards the active circuitry of the die. The present invention reduces reliability risks since cracks that have been initiated from the sawing process will eventually self terminate in the edges of the test pads of the present design.
Though the invention has been described with respect to a specific preferred embodiment, many variations and modifications will become apparent to those skilled in the art upon reading the present application. It is therefore the intention that the appended claims be interpreted as broadly as possible in view of the prior art to include all such variations and modifications.
Claims
1. A method of forming a semiconductor wafer, comprising the steps of:
- defining a plurality of integrated circuits on said wafer, said integrated circuits being separated from one another by a scribe street; and
- defining a plurality of test pads in said scribe street and connected to said respective integrated circuits, said test pads having a curved profile.
2. The method as specified in claim 1 wherein said test pad curved profile is formed and adapted to reduce the propagation of cracks to the corresponding integrated circuit during sawing of said scribe street.
3. The method as specified in claim 2 wherein said test pad has a round profile.
4. The method as specified in claim 2 wherein said test pad has an elliptical profile.
5. The method as specified in claim 3 wherein said test pad extends closely proximate one said integrated circuit.
6. The method as specified in claim 2 wherein said test pad is formed such that cracks developed in said test pad during wafer saw terminate in said test pad.
Type: Application
Filed: Jun 22, 2007
Publication Date: Oct 18, 2007
Applicant: TEXAS INSTRUMENTS INCORPORATED (Dallas, TX)
Inventors: Ruben Rolda (Baguio City), Richard Valerio (Merikina City), Jenny Olero (Baguio City)
Application Number: 11/767,233
International Classification: H01L 21/66 (20060101);