Transistor

Abstract

Provided is a transistor including a semiconductor insertion layer between a channel layer and a source electrode. A potential barrier between the channel layer and the source electrode may be increased by the semiconductor insertion layer. The channel layer may be an oxide semiconductor layer. The transistor may be an enhancement mode transistor.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority under U.S.C. §119 to Korean Patent Application No. 10-2009-0131292, filed on Dec. 24, 2009, in the Korean Intellectual Property Office (KIPO), the entire contents of which are incorporated herein by reference.

BACKGROUND

1. Field

Example embodiments relate to a transistor, and more particularly, to an oxide transistor.

2. Description of the Related Art

Transistors are commonly used as switching devices or driving devices in electronic devices. In particular, a thin film transistor (TFT) may be formed on a glass substrate or on a plastic substrate. As a result, TFTs may be often used in the field of flat panel display devices, e.g., liquid crystal display devices and/or organic light emitting display devices.

In order to improve the operational characteristics of a transistor, attempts have been made to utilize an oxide semiconductor layer as a channel layer of the transistor. This method is mainly employed for manufacturing TFTs for flat panel display devices. However, the threshold voltage may be difficult to control in a transistor having an oxide semiconductor layer as the channel layer (hereinafter, an oxide transistor).

In more detail, when a silicon layer is used as a channel layer, a threshold voltage may be more easily controlled by controlling a doping concentration. However, in the oxide transistor, controlling a threshold voltage through doping due to a self-compensation phenomenon may be difficult. Also, the oxide transistor may be a majority carrier device in which the types of a channel and a carrier charge that moves from a source to a drain are the same. Such a majority carrier device may be operated in an accumulation mode and generally has a threshold voltage less than 0 V (based on an n-type oxide transistor). Accordingly, when an oxide semiconductor layer is used as a channel layer, realizing an enhancement mode transistor having a threshold voltage greater than 0 V (based on an n-type oxide transistor) may be difficult.

SUMMARY

Provided are oxide transistors of which threshold voltages may be more easily controlled. Additional aspects will be set forth in part in the description which follows and, in part, will be apparent from the description, or may be learned by practice of example embodiments.

According to example embodiments, a transistor may include a channel layer including an oxide semiconductor; a gate electrode corresponding to the channel layer; a source electrode and a drain electrode contacting portions of the channel layer; and a semiconductor insertion layer between the channel layer and the source electrode.

A potential barrier may increase between the channel layer and the source electrode due to the semiconductor insertion layer. When the channel layer is an n-type channel layer, a work function of the semiconductor insertion layer may be greater than that of the channel layer. In example embodiments, an n-type carrier concentration of the semiconductor insertion layer may be lower than that of the channel layer.

When the channel layer is a p-type channel layer, a work function of the semiconductor insertion layer may be smaller than that of the channel layer. In example embodiments, a p-type carrier concentration of the semiconductor insertion layer may be lower than that of the channel layer.

The channel layer may include any one selected from the group consisting of ZnO, GaO, InO, SnO, CdO, CaO, AlO, TiO, TaO, NbO, LnO, HfO, ZrO, YO, NiO, CuO, and a combination thereof, or oxide semiconductors thereof. The channel layer may be formed of a ZnO-based oxide semiconductor. The ZnO-based oxide semiconductor may further include at least one selected from the group consisting of In, Ga, Sn, Ti, Zr, Hf, Y, and Ta.

The semiconductor insertion layer may include one selected from the group consisting of SiC, AlN, GaN, InN, AlP, GaP, InAs, GaAs, AlAs, InSb, GaSb, ZnS, CdS, ZnTe, CdTe, CdSe, CdS, ZnO, GaO, InO, SnO, CdO, CaO, AlO, TiO, TaO, NbO, LnO, HfO, ZrO, YO, NiO, CuO, and a combination thereof, or compounds thereof.

The semiconductor insertion layer may have an energy bandgap of about 0.5 to about 4.0 eV. The semiconductor insertion layer may have a thickness of about 1 to about 300 {acute over (Å)}. The transistor may be an enhancement mode transistor.

The semiconductor insertion layer may be a first semiconductor insertion layer, and a second semiconductor insertion layer may be between the channel layer and the drain electrode. The first and second semiconductor insertion layers may be formed of the same material. The transistor may be a thin film transistor (TFT) having a top-gate structure. The transistor may be a TFT having a bottom-gate structure.

In example embodiments, the transistor may further include a gate insulating layer between the channel layer and the gate electrode. The gate insulating layer may include one selected from the group consisting of a silicon oxide layer, a silicon nitride layer, and a high-dielectric material layer having a dielectric constant greater than that of the silicon nitride layer.

The gate insulating layer may have a structure including at least two stacked layers from among the silicon oxide layer, the silicon nitride layer, and the high-dielectric material layer. The transistor may further include an insulating layer on the gate insulating layer and the gate electrode.

BRIEF DESCRIPTION OF THE DRAWINGS

These and/or other aspects will become apparent and more readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:

FIGS. 1 through 4 are cross-sectional views illustrating a transistor having an asymmetrical source/drain structure, according to example embodiments;

FIGS. 5 through 8 are cross-sectional views illustrating a transistor having a symmetrical source/drain structure, according to example embodiments;

FIG. 9 is an energy band diagram illustrating a source electrode, an insertion layer, and a channel layer of a transistor, according to example embodiments;

FIG. 10 is an energy band diagram illustrating a source electrode and a channel layer of a transistor, according to a comparative example;

FIG. 11 is an energy band diagram illustrating a source electrode, an insertion layer, and a channel layer of a transistor, according to example embodiments;

FIG. 12 is an energy band diagram illustrating a source electrode and a channel layer of a transistor, according to another comparative example; and

FIG. 13 is a graph illustrating gate voltage V_g-drain current I_d characteristics of transistors, according to example embodiments and a comparative example.

DETAILED DESCRIPTION

Various example embodiments will now be described more fully with reference to the accompanying drawings in which example embodiments are shown. Example embodiments may, however, be embodied in many different forms and should not be construed as being limited to example embodiments set forth herein; rather, these example embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those of ordinary skill in the art.

It will be understood that when an element is referred to as being “connected” or “coupled” to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being “directly connected” or “directly coupled” to another element, there are no intervening elements present. As used herein the term “and/or” includes any and all combinations of one or more of the associated listed items.

It will be understood that, although the terms “first”, “second”, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of example embodiments.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as “below” or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, the example term “below” can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments. As used herein, the singular forms “a,” “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises”, “comprising”, “includes” and/or “including,” if used herein, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.

Example embodiments are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of example embodiments. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, example embodiments should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an implanted region illustrated as a rectangle will, typically, have rounded or curved features and/or a gradient of implant concentration at its edges rather than a binary change from an implanted to a non-implanted region. Likewise, a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation takes place. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of example embodiments.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which example embodiments belong. It will be further understood that terms, such as those defined in commonly-used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

In the drawings, the thicknesses of layers and regions are exaggerated for clarity. Like reference numerals in the drawings denote like elements.

FIG. 1 is a cross-sectional view illustrating a transistor according to example embodiments. The transistor of example embodiments may be a thin film transistor (TFT) having a top-gate structure in which a gate electrode G1 is formed above a channel layer C1.

Referring to FIG. 1, the channel layer C1 may be formed on a substrate SUB1. The substrate SUB1 may be a silicon substrate, a glass substrate, a plastic substrate or other substrates used in a general semiconductor device process. The substrate SUB1 may or may not be transparent. The channel layer C1 may be an oxide semiconductor layer. The channel layer C1 may be an n-type oxide semiconductor layer or a p-type oxide semiconductor layer. When the channel layer C1 is an n-type oxide semiconductor layer, the channel layer C1 may include one selected from the group consisting of ZnO, GaO, InO, SnO, CdO, CaO, AlO, TiO, TaO, NbO, LnO, HfO, ZrO, YO, and a combination thereof, or oxides thereof, for example.

When the channel layer C1 is formed of a ZnO-based oxide semiconductor from among these materials, the channel layer C1 may further include at least one material selected from the group consisting of In, Ga, Sn, Ti, Zr, Hf, Y, and Ta. When the channel layer C1 is a p-type oxide semiconductor layer, the channel layer C1 may include one selected from the group consisting of NiO, CuO, and a combination thereof, or oxides thereof, for example. The channel layer C1 may have a single layer structure or a multi-layer structure. Although not shown in FIG. 1, an insulating layer (not shown) may be interposed between the substrate SUB1 and the channel layer C1. That is, the insulating layer may be formed on the substrate SUB1, and the channel layer C1 may be formed on the insulating layer.

A gate insulating layer GI1 may be formed on the substrate SUB1 so as to cover the channel layer C1. The gate insulating layer GI1 may be a silicon oxide layer, a silicon nitride layer, or another material layer, for example, a high-dielectric material layer having a dielectric constant greater than that of the silicon nitride layer. The gate insulating layer GI1 may have a structure in which at least two layers from among the silicon oxide layer, the silicon nitride layer, and the high-dielectric material layer are stacked.

A gate electrode G1 may be formed on the gate insulating layer GI1. The gate electrode G1 may be formed to correspond to a center portion of the channel layer C1. The gate electrode G1 may be formed of a general electrode material, e.g., a metal or a metal oxide.

A source electrode S1 and a drain electrode D1 may be formed on the channel layer C1 so as to respectively contact opposing sides of the channel layer C1. The source electrode S1 and the drain electrode D1 may be formed of a metal. The source electrode S1 and the drain electrode D1 may be a metal layer that is the same as the gate electrode G1, but may be another metal layer.

A semiconductor insertion layer A1 (hereinafter, an insertion layer A1) may be selectively formed between the source electrode S1 and the channel layer C1. In other words, the source electrode S1 and the channel layer C1 may contact each other through the insertion layer A1. In example embodiments, the drain electrode D1 and the channel layer C1 may directly contact each other.

The insertion layer A1 may increase or generate a potential barrier between the channel layer C1 and the source electrode S1. That is, the potential barrier between the channel layer C1 and the source electrode S1 may be increased by the insertion layer A1. A height and a thickness of the potential barrier may vary according to a material or a thickness of the insertion layer A1, and consequently, a threshold voltage of the transistor may be controlled. Accordingly, the insertion layer A1 may be referred to as a threshold voltage controlling layer.

For example, the insertion layer A1 may be a non-oxide semiconductor layer including at least one selected from the group consisting of a Group IV-IV compound, a Group III-V compound, a Group II-VI compound, and a Group I-VII compound, an oxide semiconductor layer, or a combination of the non-oxide semiconductor layer and the oxide semiconductor layer. In more detail, the insertion layer A1 may include one selected from the group consisting of SiC, AlN, GaN, InN, AlP, GaP, InAs, GaAs, AlAs, InSb, GaSb, ZnS, CdS, ZnTe, CdTe, CdSe, CdS, ZnO, GaO, InO, SnO, CdO, CaO, AlO, TiO, TaO, NbO, LnO, HfO, ZrO, YO, NiO, CuO, and a combination thereof, or compounds thereof. When the insertion layer A1 is an oxide layer, the insertion layer A1 may or may not include an oxide of the same group as the channel layer C1. When the insertion layer A1 includes an oxide of the same group as the channel layer C1, the insertion layer A1 and the channel layer C1 may have different oxygen concentrations and/or doping states. An energy bandgap of the insertion layer A1 may be in the range of about 0.5 to about 4.0 eV. The insertion layer A1 may have a thickness of from about 1 to about 300 Å.

When the channel layer C1 is an n-type oxide semiconductor layer, a work function of the insertion layer A1 may be greater than that of the channel layer C1. If this condition is satisfied, the insertion layer A1 may be either an n-type oxide semiconductor layer or a p-type oxide semiconductor layer. An n-type carrier concentration of the insertion layer A1 may be lower than that of the channel layer C1. Accordingly, the insertion layer A1 may be an n-type semiconductor layer having an n-type carrier concentration lower than that of the channel layer C1 or may be a p-type semiconductor layer. If both the insertion layer A1 and the channel layer C1 are n-type oxide layers, an oxygen concentration of the insertion layer A1 may be higher than that of the channel layer C1, due to the fact that, in an n-type oxide layer, as an oxygen concentration increases, a carrier concentration decreases.

When the channel layer C1 is a p-type oxide layer, a work function of the insertion layer A1 may be smaller than that of the channel layer C1. In example embodiments, the insertion layer A1 may use both the n-type oxide layer and the p-type oxide layer. The p-type carrier concentration of the insertion layer A1 may be lower than that of the channel layer C1. Accordingly, the insertion layer A1 may be a p-type semiconductor layer having a p-type carrier concentration lower than that of the channel layer C1 or may be an n-type semiconductor layer. If both the insertion layer A1 and the channel layer C1 are p-type oxide layers, an oxygen concentration of the insertion layer A1 may be lower than that of the channel layer C1, due to the fact that, in the p-type oxide layer, as the oxygen concentration decreases, the carrier concentration decreases.

As such, a material of the insertion layer A1 may be appropriately selected according to the type of the channel layer C1. As described above, the material of the insertion layer A1 may be selected from among an non-oxide semiconductor, including at least one selected from the group consisting of a Group IV-IV compound, a Group III-V compound, a Group II-VI compound, and a Group I-VII compound, and an oxide semiconductor including ZnO, GaO, InO, SnO, CdO, CaO, AlO, TiO, TaO, NbO, LnO, HfO, ZrO, YO, NiO and/or CuO.

In addition, a metal oxide, e.g., TiO, may have characteristics that vary according to its composition. For example, the metal oxide, e.g., TiO, may have a semiconductor characteristic or a conductor characteristic according to the composition. In example embodiments, an oxide semiconductor having a semiconductor characteristic may be used as the insertion layer A1. In example embodiments, the insertion layer A1 increases a potential barrier between the channel layer C1 and the source electrode S1 and does not form an ohmic-contact with the source electrode S1.

The source electrode S1 and the channel layer C1 contact each other through the insertion layer A1 interposed therebetween, and the drain electrode D1 and the channel layer C1 directly contact each other. Thus, a potential barrier between the source electrode S1 and the channel layer C1 may be different from a potential barrier between the drain electrode D1 and the channel layer C1. The potential barrier between the source electrode S1 and the channel layer C1 may be relatively higher than that of between the drain electrode D1 and the channel layer C1. As such, a structure in which the insertion layer A1 is selectively formed only between the source electrode S1 and the channel layer C1 may be defined as an asymmetric source/drain structure. Because a threshold voltage of the transistor is affected by the potential barrier between the channel layer C1 and the source electrode S1 from which electrons or holes are supplied, the insertion layer A1 may be selectively formed only in the source electrode S1 so as to control the threshold voltage. The threshold voltage may be controlled according to a height and a thickness of the potential barrier due to the insertion layer A1.

In FIG. 1, an insulating layer IL1 may be formed on the gate insulating layer GI1 so as to cover the gate electrode G1. First and second holes H1 and H2 may be formed in the insulating layer IL1 and the gate insulating layer GI1 so as to expose the channel layer C1. The first hole H1 and the second hole H2 may respectively expose both ends of the channel layer C1. Both the insertion layer A1 and the source electrode S1 may be formed inside the first hole H1, and the drain electrode D1 may be formed inside the second hole H2. Such a structure is just an example, and thus, the structure may be modified in various forms. For example, FIG. 1 shows that the insertion layer A1 may be formed only in a bottom surface of the first hole H1, but the insertion layer A1 may be coated on an inner wall surface of the first hole H1 as well.

In example embodiments, the insertion layer A1 may be formed at an end of the channel layer C1, the insulating layer IL1 may be formed so as to cover the insertion layer A1, a hole may be formed in the insulating layer IL1 so as to expose the insertion layer A1, and finally, the source electrode S1 may be formed inside the hole. In example embodiments, the insertion layer A1 may be wider than the source electrode S1. A1so, in FIG. 1, the insertion layer A1 may be formed as an additional layer on the channel layer C1. However, in example embodiments, an upper portion of the channel layer C1 may be formed to have the same function as the insertion layer A1. Also, the structure of FIG. 1 may be modified to have various other forms.

As in example embodiments as illustrated in FIG. 1, if the insertion layer A1 is formed between the source electrode S1 and the channel layer C1, a potential barrier therebetween may be increased due to the insertion layer A1, and a threshold voltage of the transistor may be increased. In an n-type transistor, a threshold voltage increases in a positive (+) direction. On the other hand, in a p-type transistor, a threshold voltage increases in a negative (−) direction. In the n-type transistor, when the threshold voltage is greater than 0 V, the transistor may be an enhancement mode transistor. On the other hand, in the p-type transistor, when the threshold voltage is less than 0 V, the transistor may be an enhancement mode transistor. Thus, according to example embodiments, an enhancement mode oxide transistor may be realized.

In a transistor including a channel layer formed of oxide, controlling a threshold voltage through doping due to a self-compensation phenomenon may be difficult. Also, because the oxide transistor is a majority carrier device that is operated in an accumulation mode and easily turned-on at a lower voltage, realizing an enhancement mode transistor may be difficult. However, in example embodiments, as described above, the insertion layer A1 for increasing a potential barrier may be formed between the source electrode S1 and the channel layer C1, so that a threshold voltage of the oxide transistor may be increased, thereby realizing an enhancement mode transistor. Also, the threshold voltage of the oxide transistor may be appropriately controlled according to its purpose by controlling a material and a thickness of the insertion layer A1.

FIG. 2 illustrates a transistor according to example embodiments. The transistor of example embodiments may be a TFT having a bottom gate structure in which a gate electrode G2 is formed below a channel layer C2. Referring to FIG. 2, the gate electrode G2 may be formed on a substrate SUB2. An insulating layer (not shown) may be formed on the substrate SUB2, and the gate electrode G2 may be formed on the insulating layer. A gate insulating layer GI2 may be formed on the substrate SUB2 so as to cover the gate electrode G2. A channel layer C2 may be formed on the gate insulating layer GI2. The channel layer C2 may be formed above the gate electrode G2 and may be slightly wider than the gate electrode G2.

A source electrode S2 and a drain electrode D2 may be formed on the channel layer C2 so as to respectively contact opposing sides of the channel layer C2. A semiconductor insertion layer A2 (hereinafter, an insertion layer A2) may be selectively formed between the channel layer C2 and the source electrode S2. An insulating layer IL2 may be formed on the gate insulating layer GI2 so as to cover the channel layer C2. First and second holes H1′ and H2′ may be formed in the insulating layer IL2. Both the insertion layer A2 and the source electrode S2 may be formed inside the first hole H1′, and the drain electrode D2 may be formed inside the second hole H2′. In FIG. 2, materials, configurations, and thicknesses of the substrate SUB2, the gate electrode G2, the channel layer C2, the source electrode S2, the drain electrode D2, and the insertion layer A2 may be the same as or similar to those of the substrate SUB1, the gate electrode G1, the channel layer C1, the source electrode S1, the drain electrode D1, and the insertion layer A1 of FIG. 1.

In FIGS. 1 and 2, the holes H1, H1′, H2, and H2′ are formed in the insulating layers IL1 and IL2, and the source electrodes S1 and S2 and the drain electrodes D1 and D2 are formed in the holes H1, H1′, H2, and H2′. However, in example embodiments, a source electrode and a drain electrode may be formed without the holes H1, H1′, H2, and H2′, which is illustrated in FIGS. 3 and 4.

Referring to FIG. 3, a channel layer C3 may be formed on a substrate SUB3. A source electrode S3 and a drain electrode D3 may be formed on the channel layer C3 so as to respectively cover opposing sides of the channel layer C3. An insertion layer A3 may be interposed between the channel layer C3 and the source electrode S3. A gate insulating layer GI3 may be formed above the substrate SUB3 so as to cover the source electrode S3, the drain electrode D3, and the channel layer C3. A gate electrode G3 may be formed on the gate insulating layer GI3. In FIG. 3, materials, configurations, and thicknesses of the substrate SUB3, the gate electrode G3, the channel layer C3, the source electrode S3, the drain electrode D3, and the insertion layer A3 may be the same as or similar to those of the substrate SUB1, the gate electrode G1, the channel layer C1, the source electrode S1, the drain electrode D1, and the insertion layer A1 of FIG. 1.

Referring to FIG. 4, a gate electrode G4 may be formed on a substrate SUB4. A gate insulating layer GI4 may be formed on the substrate SUB4 so as to cover the gate electrode G4. The channel layer C4 may be formed on the gate insulating layer GI4, and a source electrode S4 and a drain electrode D4 may be formed on the channel layer C4 so as to respectively cover both ends of the channel layer C4. An insertion layer A4 may be interposed between the channel layer C4 and the source electrode S4. In FIG. 4, materials, configurations, and thicknesses of the substrate SUB4, the gate electrode G4, the channel layer C4, the source electrode S4, the drain electrode D4, and the insertion layer A4 may be the same as or similar to those of the substrate SUB1, the gate electrode G1, the channel layer C1, the source electrode S1, the drain electrode D1, and the insertion layer A1 of FIG. 1.

In FIGS. 3 and 4, the source and drain electrodes S3 and D3 and the source and drain electrodes S4 and D4 are respectively formed so as to contact both ends of an upper surface of the channel layers C3 and C4. However, in example embodiments, a source electrode and a drain electrode may contact both ends of a lower surface of a channel layer.

FIG. 9 is an energy band diagram illustrating a source electrode, an insertion layer, and a channel layer of a transistor, according to example embodiments. FIG. 9 illustrates an n-type channel layer. In FIG. 9, reference marks E_C and E_V denote the lowest energy level of a conduction band and the highest energy level of a valence band, respectively, and a reference mark E_F denotes a Fermi energy level, and these reference marks are the same as those in FIGS. 10 through 12.

Referring to FIG. 9, E_C of an insertion layer may be higher than that of the channel layer. This is due to the fact that when the insertion layer, having a work function greater than that of the channel layer, and the channel layer are bonded to each other, the E_C and E_V of the channel layer move downwards. Accordingly, a potential barrier φ_B with respect to electrons e- may be generated between a source electrode (metal) and the channel layer due to the insertion layer. The potential barrier Φ_B may prevent or reduce flow of the electrons e- moving from the source electrode to the channel layer. A larger gate voltage may be required in order to move the electrons e- toward the channel layer over the potential barrier Φ_B. Accordingly, a threshold voltage of the transistor may increase in a positive + direction due to the insertion layer. The amount of increase of the threshold voltage may vary according to a height of the potential barrier Φ_B and a thickness of the insertion layer. If the insertion layer is sufficiently thin, the electrons e- may be tunneled through the insertion layer, and thus, the increase effect of the threshold voltage may be slightly decreased. However, when a user desires to minutely control the threshold voltage, the thickness of the insertion layer may be formed relatively thin. In FIG. 9, the E_F and E_C of the channel layer are close to each other, but the E_F and E_C of the insertion layer are relatively far away from each other. Therefore, an n-type carrier concentration of the insertion layer may be lower than that of the channel layer.

FIG. 10 is an energy band diagram illustrating a source electrode and a channel layer of a transistor, according to a comparative example not including an insertion layer. In example embodiments, the channel layer may be an n-type channel layer. That is, FIG. 10 illustrates the energy band diagram of a case where a source electrode and a channel layer directly contact each other without the insertion layer of FIG. 9.

Referring to FIG. 10, when the source electrode and the channel layer directly contact each other, a potential barrier Φ_B therebetween may be lower than that of FIG. 9. In example embodiments, the transistor may be a depletion mode transistor of which a threshold voltage is smaller than 0.

FIG. 11 is an energy band diagram illustrating a source electrode, an insertion layer, and a channel layer of a transistor, according to example embodiments. The channel layer of FIG. 11 may be a p-type channel layer. Referring to FIG: 11, E_V of the insertion layer may be lower than that of the channel layer. When the insertion layer, having a work function smaller than that of the channel layer, and the channel layer are bonded to each other, E_C and E_V of the channel layer move upwards. Accordingly, a potential barrier Φ_B with respect to holes h may be generated between the source electrode (metal) and the channel layer due to the insertion layer. The potential barrier Φ_B may prevent or reduce flow of the holes h moving from the source electrode to the channel layer. A larger gate voltage may be required in order to move the holes h toward the channel layer over the potential barrier Φ_B.

Accordingly, a threshold voltage of the transistor may increase in a negative − direction due to the insertion layer. The increase extent of the threshold voltage may vary according to a height of the potential barrier Φ_B and a thickness of the insertion layer. In FIG. 11, E_F and E_C of the channel layer are close to each other, but E_F and E_C of the insertion layer are relatively far away from each other. A p-type carrier concentration of the insertion layer may be lower than that of the channel layer.

FIG. 12 is an energy band diagram illustrating a source electrode and a channel layer of a transistor, according to another comparative example not including an insertion layer. In example embodiments, the channel layer may be a p-type channel layer. That is, FIG. 12 illustrates the energy band diagram of a case where a source electrode and a channel layer directly contact each other without the insertion layer of FIG. 11.

Referring to FIG. 12, when the source electrode and the channel layer directly contact each other, a potential barrier Φ_B therebetween may be lower than that of FIG. 11. In example embodiments, the transistor may be more easily turned-on.

As in FIGS. 9 and 11, when the insertion layer is used, a potential barrier between the source electrode and the channel layer may be increased, and thus, a threshold voltage of the transistor may be increased. Accordingly, the transistor may be an enhancement mode transistor. However, the transistor of example embodiments may not be necessarily an enhancement mode transistor. The threshold voltage of the transistor may be controlled while maintaining the transistor in a depletion mode, according to its purpose.

FIGS. 1 through 4 illustrate the asymmetrical source/drain structure in which the semiconductor insertion layers A1 through A4 are respectively formed only in the source electrode S1 through S4. However, according to example embodiments, the semiconductor insertion layers A1 through A4 may be respectively formed in the drain electrodes D1 through D4, and those examples are illustrated in FIGS. 5 through 8.

The structures of FIGS. 5 through 8 are modified examples of structures illustrated in FIGS. 1 through 4. The structures of FIGS. 5 through 8 further include the insertion layers A1 through A4 between the channel layers C1 through C4 and the drain electrodes D1 through D4. The rest of the components are the same as those of FIGS. 1 through 4. As such, a structure in which the insertion layers A1 through A4 are respectively formed in both the source electrodes S1 through S4 and the drain electrodes D1 through D4 is referred to as a symmetric source/drain structure.

As in FIGS. 5 through 8, when the insertion layers A1 through A4 are formed both between the source electrodes S1 through S4 and the channel layers C1 through C4 and between the drain electrodes D1 through D4 and the channel layers C1 through C4, the manufacturing process may be simplified compared to the asymmetrical source/drain structure of FIGS. 1 through 4. In example embodiments, a threshold voltage of a transistor may be controlled by the insertion layers A1 through A4 formed between the source electrodes S1 through S4 and the channel layers C1 through C4, because the threshold voltage of the transistor may be influenced by the potential barriers of the source electrodes S1 through S4 from which charges (electrons or holes) are supplied, compared to the potential barriers of the drain electrodes D1 through D4.

The transistor having the asymmetrical source/drain structure of FIGS. 1 through 4, that is, the transistor in which the insertion layers A1 through A4 are selectively formed only between the source electrodes S1 through S4 and the channel layers C1 through C4 may be more advantageous in terms of mobility, compared to the transistor having the symmetrical source/drain structure of FIGS. 5 through 8. In the transistor having the asymmetrical source/drain structure, the potential barriers of the drain electrodes D1 through D4 may be lower, and thus, charges may be more easily discharged to the drain electrodes D1 through D4.

FIG. 13 is a graph illustrating gate voltage V_g-drain current I_d characteristics of transistors according to example embodiments and a comparative example. The transistor according to example embodiments may have the same structure as the transistor of FIG. 5, and uses a GaInZnO layer and an IZO layer as the channel layer C1 and the insertion layer A1, respectively. Both the channel layer (the GaInZnO layer) and the insertion layer (the IZO layer) may be n-type oxide semiconductor layers. An n-type carrier concentration of the insertion layer (the IZO layer) may be lower than that of the channel layer (the GaInZnO layer). Characteristics of cases where thicknesses of the insertion layer (the IZO layer) may be respectively 50 Å and 130 Å were evaluated.

A characteristic of the transistor that does not use an insertion layer (that is, the transistor according to the comparative example) was evaluated. The transistor according to the comparative example has a structure that is the same as that of the transistor according to example embodiments, except that the transistor according to the comparative example does not use an insertion layer. In the graph of FIG. 13, plots of a first group G1 show a result regarding the transistor according to the comparative example, and plots of second and third groups G2 and G3 show results regarding the transistor according to example embodiments. The plots of the second group G2 show a case where a thickness of the insertion layer (the IZO layer) may be 50 Å, and the plots of the third group G3 shows a case where a thickness of the insertion layer (the IZO layer) may be 130 Å.

Referring to FIG. 13, the plots of the first group G1 showing a result regarding the transistor according to the comparative example may be turned-on at a considerably low voltage. On the other hand, the plots of the second and third groups G2 and G3 showing results regarding the transistor according to example embodiments may be located at a right side compared to the plots of the first group G1, which shows that, when an insertion layer is used, a threshold voltage increases in a positive + direction. The plots of the third group G3 may be located at a right side compared to the plots of the second group G2, which shows that as a thickness of the insertion layer increases, the threshold voltage may increase more.

In addition, a threshold voltage may be increased by using another method of forming a source electrode with a material (metal) forming a Schottky junction with a channel layer. However, to form a Schottky junction with an n-type oxide channel layer, a metal having a relatively high work function (more than about 4.5 to about 4.7 eV) may be used. Accordingly, metals used in the source electrode may be limited. Furthermore, metals having relatively high work functions may be mostly expensive precious metals, and may also be hard to etch. When a Schottky junction is used, ensuring uniformity of characteristics between transistors may be difficult, and also, a relatively large amount of leakage current may be generated. However, as in example embodiments, when a threshold voltage is increased by using a semiconductor insertion layer, the choice of a source/drain electrode material may be wider, and also various problems, e.g., an etching issue, non-uniformity of characteristics, or leakage current, may be prevented or reduced.

While example embodiments have been shown and described with reference to the accompanying drawings, the scope of the present application should not be construed as being limited to example embodiments. For instance, one of ordinary skill in the art would understand that the teachings herein may be applied to other transistors besides TFTs. Also, the constituent elements and structures of the transistors of FIGS. 1 through 8 may be modified in various forms. In more detail, the transistor according to example embodiments may have a double gate structure and may use a channel layer formed of a non-oxide. Therefore, the scope of the present application should not be interpreted as being unduly limited to the literal text of the detailed description.

Claims

1. A transistor comprising:

a channel layer including an oxide semiconductor;

a gate electrode corresponding to the channel layer;

a source electrode and a drain electrode contacting portions of the channel layer; and

a semiconductor insertion layer between the channel layer and the source electrode,

wherein a potential barrier between the channel layer and the source electrode is increased by the semiconductor insertion layer.

2. The transistor of claim 1, wherein the channel layer is an n-type channel layer, and a work function of the semiconductor insertion layer is greater than that of the channel layer.

3. The transistor of claim 2, wherein an n-type carrier concentration of the semiconductor insertion layer is lower than that of the channel layer.

4. The transistor of claim 1, wherein the channel layer is a p-type channel layer, and a work function of the semiconductor insertion layer is smaller than that of the channel layer.

5. The transistor of claim 4, wherein a p-type carrier concentration of the semiconductor insertion layer is lower than that of the channel layer.

6. The transistor of claim 1, wherein the channel layer includes any one selected from the group consisting of ZnO, GaO, InO, SnO, CdO, CaO, AlO, TiO, TaO, NbO, LnO, HfO, ZrO, YO, NiO, CuO, and a combination thereof, or oxide semiconductors thereof.

7. The transistor of claim 6, wherein the channel layer is formed of a ZnO-based oxide semiconductor.

8. The transistor of claim 7, wherein the ZnO-based oxide semiconductor further includes at least one selected from the group consisting of In, Ga, Sn, Ti, Zr, Hf, Y, and Ta.

9. The transistor of claim 1, wherein the semiconductor insertion layer includes one selected from the group consisting of SiC, AlN, GaN, InN, AlP, GaP, InAs, GaAs, AlAs, InSb, GaSb, ZnS, CdS, ZnTe, CdTe, CdSe, CdS, ZnO, GaO, InO, SnO, CdO, CaO, AlO, TiO, TaO, NbO, LnO, HfO, ZrO, YO, NiO, CuO, and a combination thereof, or compounds thereof.

10. The transistor of claim 1, wherein the semiconductor insertion layer has an energy bandgap of about 0.5 to about 4.0 eV.

11. The transistor of claim 1, wherein the semiconductor insertion layer has a thickness of about 1 to about 300 Å.

12. The transistor of claim 1, wherein the transistor is an enhancement mode transistor.

13. The transistor of claim 1, wherein the semiconductor insertion layer is a first semiconductor insertion layer, further comprising:

a second semiconductor insertion layer between the channel layer and the drain electrode.

14. The transistor of claim 13, wherein the first and second semiconductor insertion layers are formed of the same material.

15. The transistor of claim 1, wherein the transistor is a thin film transistor (TFT) having a top-gate structure.

16. The transistor of claim 1, wherein the transistor is a TFT having a bottom-gate structure.

17. The transistor of claim 1, further comprising:

a gate insulating layer between the channel layer and the gate electrode.

18. The transistor of claim 17, wherein the gate insulating layer includes one selected from the group consisting of a silicon oxide layer, a silicon nitride layer, and a high-dielectric material layer having a dielectric constant greater than that of the silicon nitride layer.

19. The transistor of claim 18, wherein the gate insulating layer has a structure including at least two stacked layers from among the silicon oxide layer, the silicon nitride layer, and the high-dielectric material layer.