SEMICONDUCTOR DEVICE HAVING VERTICAL MOS TRANSISTOR AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
A method for manufacturing a semiconductor device including a vertical MOS transistor, includes forming a trench for shallow trench isolation in a semiconductor substrate, and burying an element isolation insulating film in the trench, forming an insulating film to be a mask for forming a semiconductor pillar, in a region subjected to shallow trench isolation, etching the semiconductor substrate in the region subjected to the shallow trench isolation with the insulating film as a mask, and forming a semiconductor pillar for the vertical MOS transistor, implanting an impurity onto the semiconductor substrate, and forming a lower diffusion layer in the portion shallower than the depth of the shallow trench isolation, and forming a gate insulating film on the semiconductor substrate and the side surface of the semiconductor pillar for the vertical MOS transistor.
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The present application is a Divisional application of U.S. patent application Ser. No. 12/230,562, filed on Sep. 2, 2008, which is based on and claims priority from Japanese Patent Application No. JP 2007-232591, filed on Sep. 7, 2007, the entire content of which is incorporated herein by reference.
BACKGROUND OF THE INVENTION1. Field of the Invention
The present invention relates to a semiconductor device, more specifically, a semiconductor device having a vertical MOS transistor.
2. Description of the Related Art
Recently, a three-dimensional structure type MOSFET in which a gate structure is made three-dimensional is proposed for increasing an integration degree of a semiconductor device. Such as the three-dimensional structure type MOSFETs, an FinFET in which a channel layer of a Fin structure is sandwiched by gate electrodes, an surrounding gate transistor (hereinafter, called SGT) in which agate electrode is formed around a silicon pillar are known.
Of them, an SGT has the structure in which the source, the gate and the drain are disposed in the perpendicular direction to the substrate, and the gate surrounds the silicon pillar. Accordingly, an SGT has the occupation area reduced significantly as compared with a planar type MOSFET. Therefore, an SGT is significantly expected to be applied to a DRAM, Flash EEP ROM and CMOS.
In an SGT structure, for example, as shown in
While miniaturization of elements is underway, element isolation by a LOCOS method has the problem of being incapable of forming a microscopic element isolation region. Thus, element isolation region of 250 nm or less becomes possible by a shallow trench isolation (hereinafter, called STI).
When an SGT structure is provided by forming a silicon pillar in the region of the silicon substrate subjected to element isolation by such STI, if STI is to be formed after the silicon pillar is formed, the substrate thickness is required by that amount, and the silicon pillar has to be protected at the time of formation of STI. Thus, formation of the silicon pillar by etching the substrate after formation of STI is generally conceivable.
Thereafter, the lower diffusion layer is formed, an insulating film is formed on the silicon substrate including the side surface of the silicon pillar, the gate electrode material is deposited, and the SGT structure in which the gate electrode is formed on the side surface of the silicon pillar by etch back or the like is completed.
In the conventional planar type MOS transistor, an unnecessary portion of the gate electrode material is all removed at the time of processing the gate electrode, and therefore, the portion which becomes floating state is not formed.
However, in the case of forming the vertical MOS transistor in which the silicon pillar is formed by etching the silicon substrate at the area surrounded by the STI region, the channel part is formed by covering the silicon pillar with the gate insulating film and the gate electrode, and the diffusion layers to be the source and drain are included on the top and bottom of the channel part, the gate electrode material remains on the side surface of the STI insulating film at the time of formation of the gate electrode.
The gate electrode material remaining on the side surface of the STI insulating film is brought into a floating state, and as a result, when electric charge is injected into the gate electrode material brought into the floating state by certain influence during operation of the MOS transistor, its potential changes to cause the problem that the parasitic MOS in the STI region operates.
When the diameter of the silicon pillar is made smaller, the contact to the upper diffusion layer and the contact to the gate electrode move closer to each other, and ultimately, separation of the contacts becomes difficult. As shown in Japanese Patent Laid-Open No. 6-53513, leading the gate contact to the outside of the element isolation region is difficult due to interference of the height of the STI insulating film, and formation of the gate contact with an easier method is desired.
The present inventor has recognized that, in the vertical MOS transistor in which the silicon pillar is formed by etching the silicon substrate at the portion surrounded by the STI region, the channel part is formed by covering the silicon pillar with the gate insulating film and the gate electrode, and the diffusion layers to be the source and drain are included on the top and bottom of the channel part, the parasitic MOS operation by the gate electrode material remaining on the side surface of the STI insulating film becomes a problem.
Further, separation of the upper diffusion layer contact and the gate contact when a microscopic silicon pillar is formed is difficult.
SUMMARYThe present invention seeks to solve one or more of the above problems, or to improve upon those problems at least in part.
In one embodiment, there is provided a method for manufacturing a semiconductor device including a vertical MOS transistor, including forming a trench for shallow trench isolation in a semiconductor substrate, and burying an element isolation insulating film in the trench, forming an insulating film to be a mask for forming a semiconductor pillar, in a region subjected to shallow trench isolation, etching the semiconductor substrate in the region subjected to the shallow trench isolation with the insulating film as a mask, and forming a semiconductor pillar for the vertical MOS transistor, implanting an impurity onto the semiconductor substrate, and forming a lower diffusion layer in the portion shallower than the depth of the shallow trench isolation, forming a gate insulating film on the semiconductor substrate and the side surface of the semiconductor pillar for the vertical MOS transistor, depositing a gate electrode material, etching back the gate electrode material, and leaving a gate electrode on the side surface of the semiconductor pillar for the vertical MOS transistor on which the gate insulating film is formed, and leaving the gate electrode material on the side surface of the element isolation insulating film, forming an interlayer insulating film and flattening the interlayer insulating film to the height of the mask insulating film, removing the mask insulating film on the semiconductor pillar for the vertical MOS transistor, and forming a sidewall insulating film in an opening which is formed, implanting an impurity via the sidewall insulating film, and forming an upper diffusion layer on the top portion of the semiconductor pillar for the vertical MOS transistor, and forming an electrode which contacts the gate electrode material on the side surface of the element isolation insulating film.
The gate electrode material can be formed on the side surface of the element isolation insulating film is formed to be in contact with the gate electrode of the vertical MOS transistor. Forming an electrode is forming an electrode which contacts the gate electrode material on the side surface of the semiconductor pillar of a dummy transistor different from the vertical MOS transistor. The semiconductor pillar for the vertical MOS transistor is formed close to the region subjected to the shallow trench isolation, or close to the semiconductor pillar for the dummy transistor, and the gate electrode material formed on the side surface of the element isolation insulating film, or a gate electrode material of the dummy transistor in contact with the gate electrode material formed on the side surface of the element isolation insulating film is formed to be in contact with the gate electrode of the vertical MOS transistor.
According to the present invention, by supplying a predetermined voltage to the gate electrode material remaining on the side surface of the STI insulating film, and by controlling the potential, the problem of the gate electrode material remaining on the side surface of the STI insulating film being brought into a floating state can be solved. As a result, the stable operation of the integrated circuit using the vertical MOS transistor is made possible.
Further, by providing a dummy transistor at least partially in contact with the gate electrode material of the side surface of the STI insulating film, and by providing the electrode contacting the gate electrode, the dummy transistor contact can be formed in the same process as the gate extraction electrode of the vertical MOS transistor, and the potential of the gate electrode material remaining on the side surface of the STI insulating film can be controlled via the dummy transistor contact. Therefore, the process can be simplified.
Further, by bringing the gate electrode material of the side surface of the STI insulating film and the gate electrode of the vertical MOS transistor into contact with each other, or by bringing them into contact with each other via the dummy transistor, the problem of the gate electrode material remaining on the side surface of the STI insulating film being brought into a floating state can be solved, and at the same time, the gate potential of the vertical MOS transistor can be controlled. Therefore, formation of a new contact for the gate electrode of the vertical MOS transistor is not required, and the degree of freedom of the wiring layout increases.
The above features and advantages of the present invention will be more apparent from the following description of certain preferred embodiments taken in conjunction with the accompanying drawings, in which:
The invention will be now described herein with reference to illustrative embodiments. Those skilled in the art will recognize that many alternative embodiments can be accomplished using the teachings of the present invention and that the invention is not limited to the embodiments illustrated for explanatory purposes.
First Exemplary Embodiment Configuration of the First Exemplary EmbodimentAs shown in the sectional view of
The description of the manufacturing method will be described by using
For electrode 14 which contacts conductive sidewall 8′ formed on the side surface of STI insulating film 2, an optional place can be selected like contact (1) to contact (III), as shown in the plane view of
As described above, by supplying a predetermined voltage to electrode 14 which contacts with conductive sidewall 8′ formed on the side surface of STI insulating film 2, conductive sidewall 8′ can be prevented from being brought into a floating state.
Manufacturing Method of the First Exemplary Embodiment
A method for manufacturing the present exemplary embodiment shown in
In the method for manufacturing the semiconductor device including the vertical MOS transistor in the first exemplary embodiment includes
(1) forming a trench for shallow trench isolation in a semiconductor substrate, and burying an element isolation insulating film in the trench,
(2) forming an insulating film to be a mask for forming a semiconductor pillar, in a region subjected to shallow trench isolation,
(3) etching the semiconductor substrate in the region subjected to the shallow trench isolation with said insulating film as a mask, and forming a semiconductor pillar for the vertical MOS transistor,
(4) implanting an impurity onto the semiconductor substrate, and forming a lower diffusion layer in the portion shallower than the depth of the shallow trench isolation,
(5) forming a gate insulating film on the semiconductor substrate and the side surface of the semiconductor pillar for the vertical MOS transistor;
(6) depositing a gate electrode material, etching back the gate electrode material, and leaving a gate electrode material on the side surface of the semiconductor pillar for the vertical MOS transistor on which the gate insulating film is formed, and leaving the gate electrode material on the side surface of the element isolation insulating film,
(7) forming an interlayer insulating film and flattening the interlayer insulating film to the height of the mask insulating film,
(8) removing the mask insulating film on the semiconductor pillar for the vertical MOS transistor, and forming a sidewall insulating film in an opening which is formed,
(9) implanting an impurity via the sidewall insulating film, and forming an upper diffusion layer on the top portion of the semiconductor pillar for the vertical MOS transistor, and
(10) forming an electrode which contacts the gate electrode material on the side surface of the element isolation insulating film.
First, as shown in
Next, as shown in
Thereafter, as shown in
Next, as shown in
Thereafter, as shown in
Subsequently, as shown in
Next, as shown in
The structure shown in
As shown in the sectional view of
As described above, the dummy transistor is formed in contact with the side wall of STI insulating film 2, and the potential of electrode 14 in contact with the gate electrode material of the dummy transistor is controlled, whereby the gate electrode material (conductive sidewall 8′) remaining on the side surface of the STI insulating film can be prevented from being brought into a floating state. Further, in this example, the contact is formed in the gate electrode material of the dummy contact. Therefore, electrode 14 can be formed at the same time as formation of gate extraction electrode 15 of the vertical MOS transistor, and the process can be simplified.
In this example, Si pillar 3b configuring the dummy transistor is formed in contact with one side surface of STI insulating film 2, but as shown in
Manufacturing Method of the Second Exemplary Embodiment
A method for manufacturing the exemplary embodiment shown in
In the method for manufacturing the semiconductor device including the vertical MOS transistor according to the second exemplary embodiment includes
(1) forming a trench for shallow trench isolation in a semiconductor substrate, and burying an element isolating insulating film in the trench;
(2) forming an insulating film to be a mask for forming a semiconductor pillar for the vertical MOS transistor, in a region subjected to shallow trench isolation, and an insulating film to be a mask for forming a semiconductor pillar for the dummy transistor to be close to or to be partially overlaid on the region subjected to the shallow trench isolation;
(3) etching the semiconductor substrate in the region subjected to the shallow trench isolation with the mask insulating film, and forming semiconductor pillars for the vertical MOS transistor and the dummy transistor;
(4) implanting an impurity onto the semiconductor substrate, and forming a lower diffusion layer in the portion shallower than the depth of the shallow trench isolation;
(5) forming a gate insulating film on the semiconductor substrate and the side surfaces of the semiconductor pillars for the vertical MOS transistor and the dummy transistor;
(6) depositing a gate electrode material, etching back the gate electrode material, and leaving a gate electrode on the side surface of the semiconductor pillar for the vertical MOS transistor on which the gate insulating film is formed, and leaving the gate electrode material continuing from the side surface of an element isolation insulating film to the side surface of the semiconductor pillar for the dummy transistor;
(7) forming an interlayer insulating film and flattening the interlayer insulating film to the height of the mask insulating film;
(8) removing the mask insulating film on the semiconductor pillar for the vertical MOS transistor, and forming a side wall insulating film in an opening which is formed;
(9) implanting an impurity via the side wall insulating film, and forming an upper diffusion layer on the top portion of the semiconductor pillar for the vertical MOS transistor; and
(10) forming an electrode which contacts the gate electrode material on the side surface of the semiconductor pillar of the dummy transistor.
First, as shown in
Next, as shown in
Thereafter, as shown in
Next, as shown in
Subsequently, as shown in
Next, as shown in
Next, thin insulating film 17 is removed by HF etching. Subsequently, as shown in
Finally, as in the first exemplary embodiment, upper diffusion layer 11 is exposed, and electrode 13 is buried, and electrode 14 which contacts gate electrode material 8 of the dummy transistor is buried, whereby the structure shown in
As shown in the sectional view of
For STI sidewall gate electrode 14, an optional place can be selected like an STI sidewall gate electrode contact (I) to an STI sidewall gate electrode contact (II), as shown in the plane view of
As described above, by controlling the potential of STI sidewall gate electrode 14, the gate potential of the vertical MOS transistor can be controlled. Therefore, formation of a new contact for the gate electrode of the vertical MOS transistor is not required, and layout becomes easy.
Manufacturing Method of the Third Exemplary Embodiment
A method for manufacturing the exemplary embodiment shown in
First, as shown in
Next, as shown in
Thereafter, as shown in
Next, as shown in
Thereafter, as shown in
Subsequently, as shown in
Next, as shown in
In the present exemplary embodiment, Si pillar 3b for the dummy transistor as shown in the second exemplary embodiment may be formed separately from Si pillar 3 for the vertical MOS transistor, and the contact and electrode 14 may be formed in contact with gate electrode material 8 of the dummy transistor. Further, the dummy transistor manufactured in the same process as the vertical MOS transistor may be provided between STI insulating film 2 and the vertical MOS transistor, and the gate potential of the vertical MOS transistor may be controlled by electrode 14 which contacts conductive sidewall 8′ via the gate electrode material of the dummy transistor.
Fourth Exemplary Embodiment Configuration of the Fourth Exemplary EmbodimentAs shown in the sectional view of
For gate electrode 14 which contacts gate electrode material 8 of the dummy transistor in contact with the side surface of STI insulating film 2, an optional place can be selected like a contact (I) to a contact (II), as shown in the plane view of
As described above, by controlling the potential of STI sidewall gate electrode 14, the gate potential of the vertical MOS transistor can be controlled. Therefore, formation a new contact for the gate electrode of the vertical MOS transistor is not required, and layout becomes easy. Further, conductive sidewall 8′ formed on the side surface of the STI insulating film is not brought into a floating state.
Manufacturing Method of the Fourth Exemplary Embodiment
A method for manufacturing the exemplary embodiment shown in
First, as shown in
Next, as shown in
Thereafter, as shown in
Next, as shown in
Subsequently, as shown in
Next, as shown in
Next, as shown in
Finally, SiO2 film 4 on Si pillar 3 is etched with insulating film sidewall 10 as the mask to expose upper diffusion layer 11, and electrode 13 is buried. Further, electrode 14 is buried in the contact hole of gate electrode 8 around Si pillar 3b. By the method as above, the structure shown in
In the above example, the shape of the Si pillar is described as a circular cylinder, but the shape of the Si pillar is not limited to this, and can be various shapes such as a polygonal cylinder, and an oval cylinder. Further, the shapes of the Si pillar for the vertical MOS transistor and the Si pillar for the dummy transistor do not have to be the same, and may be different shapes of difference sizes in accordance with the object.
The semiconductor device of the present invention can be favorably used for the cell transistor of a semiconductor recording device such as a DRAM, and can configure a microscopic cell such as a 4F2 cell.
It is apparent that the present invention is not limited to the above embodiments, but may be modified and changed without departing from the scope and spirit of the invention.
Claims
1. A method for manufacturing a semiconductor device including a vertical MOS transistor, comprising:
- forming a trench for shallow trench isolation in a semiconductor substrate, and burying an element isolation insulating film in the trench;
- forming an insulating film to be a mask for forming a semiconductor pillar, in a region subjected to shallow trench isolation;
- etching the semiconductor substrate in the region subjected to the shallow trench isolation with said insulating film as a mask, and forming a semiconductor pillar for the vertical MOS transistor;
- implanting an impurity onto the semiconductor substrate, and forming a lower diffusion layer in the portion shallower than the depth of the shallow trench isolation;
- forming a gate insulating film on the semiconductor substrate and the side surface of the semiconductor pillar for the vertical MOS transistor;
- depositing a gate electrode material, etching back the gate electrode material, and leaving a gate electrode on the side surface of the semiconductor pillar for the vertical MOS transistor on which the gate insulating film is formed, and leaving the gate electrode material on the side surface of the element isolation insulating film;
- forming an interlayer insulating film and flattening the interlayer insulating film to the height of the mask insulating film;
- removing the mask insulating film on the semiconductor pillar for the vertical MOS transistor, and forming a sidewall insulating film in an opening which is formed;
- implanting an impurity via the sidewall insulating film, and forming an upper diffusion layer on the top portion of the semiconductor pillar for the vertical MOS transistor; and
- forming an electrode which contacts the gate electrode material on the side surface of the element isolation insulating film.
2. The method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor pillar for said vertical MOS transistor is formed close to the region subjected to the shallow trench isolation,
- wherein said gate electrode material formed on the side surface of the element isolation insulating film is formed to be in contact with the gate electrode of said vertical MOS transistor.
3. A method for manufacturing a semiconductor device according to claim 2, wherein, said forming an electrode is forming an electrode which contacts the gate electrode material on the side surface of the semiconductor pillar of a dummy transistor different from said vertical MOS transistor.
4. The method for manufacturing a semiconductor device according to claim 3, wherein the semiconductor pillar for said vertical MOS transistor is formed close to the region subjected to the shallow trench isolation, or close to the semiconductor pillar for the dummy transistor, and said gate electrode material formed on the side surface of the element isolation insulating film, or a gate electrode material of said dummy transistor in contact with the gate electrode material formed on the side surface of the element isolation insulating film is formed to be in contact with the gate electrode of said vertical MOS transistor.
Type: Application
Filed: Sep 30, 2013
Publication Date: Feb 6, 2014
Applicant: Elpida Memory, Inc. (Tokyoi)
Inventors: Kiyonori Oyu (Tokyo), Yoshihiro Takaishi (Tokyo), Yu Kosuge (Tokyo)
Application Number: 14/041,822
International Classification: H01L 29/66 (20060101);