IMAGE SENSOR AND METHOD OF OPERATING THE SAME

Abstract

A method of operating an image sensor includes generating a plurality of sub pixel signals using a sub pixel group. The sub pixel group includes a plurality of sub pixels and corresponds to a single pixel. The method further includes generating a pixel signal having a plurality of bits based on a result of comparing the sub pixel signals with a reference voltage. Each of the sub pixels is a 1-transistor (1T) pixel that detects at least one photogenerated charge and includes only one transistor.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority under 35 U.S.C. §119(a) from Korean Patent Application No. 10-2013-0096857 filed on Aug. 14, 2013, the disclosure of which is hereby incorporated by reference in its entirety.

BACKGROUND

Some embodiments of the inventive concepts relate to an image sensor and/or a method of operating the same, and more particularly, to an image sensor for sensing a signal of a 1-transistor (T) pixel having a digital output and/or a method of operating the same.

An image sensor is a device that converts an optical image into an electrical signal. The image sensor includes a plurality of pixels. When each of the pixels includes a transfer transistor, a reset transistor, a selection transistor, and a source follower transistor, each pixel may be called a 4T pixel.

With the development of technology, the size of pixels has been decreased. For instance, instead of 4T pixels, 1T pixels, i.e., pixels with a single-transistor architecture have been developed.

SUMMARY

At least one embodiment relates to a method of operating an image sensor.

In one embodiment, the method includes generating a plurality of sub pixel signals using a sub pixel group. The sub pixel group includes a plurality of sub pixels and corresponds to a single pixel. The method further includes generating a pixel signal having a plurality of bits based on a result of comparing the sub pixel signals with a reference voltage. Each of the sub pixels is 1-transistor (1T) pixel that detects at least one photogenerated charge and includes only one transistor.

The sub pixels may be arranged in a matrix of “n” rows and “m” columns in the sub pixel group. The generating the pixel signal may include comparing the sub pixel signals with the reference voltage to generate comparison signals for the respective columns, generating a count result by counting each of the comparison signal, and adding count results generated for the respective columns to generate the pixel signal.

The generating the pixel signal may further include transmitting sub pixel signals output to each of the columns to an input node of a comparator using a capacitor and resetting the input node of the comparator to a power supply voltage.

The generating the pixel signal may further include sequentially increasing a voltage of the input node of the comparator by a hole voltage.

The generating the pixel signal may further include resetting an output node of the comparator to a ground voltage.

A threshold voltage of the single transistor may be changed according to the at least one photogenerated charge.

In another embodiment, the method of operating an image sensor includes receiving, at a readout circuit, a plurality of sub pixel signals from a plurality of one transistor pixels, and generating, by the readout circuit, a pixel signal based on the received sub pixels signals and a reference voltage.

In one embodiment, the generating includes comparing each of the sub pixel signals to the reference voltage, and generating the pixel signal based on results of the comparing.

In another embodiment, the generating includes producing count values. Each count value is associated with a respective once of the sub pixel signals and is based on a duration that a voltage corresponding to the respective sub pixel signal meets a relationship with the reference voltage. The pixel signal is determined based on the generated count values.

In one embodiment, the generating includes changing the voltage corresponding to the respective sub pixel signal over time.

At least one embodiment relates to an image sensor.

In one embodiment, the image sensor includes a pixel array including a plurality of sub pixel groups, each of the sub pixel groups including a plurality of sub pixels and corresponds to a single pixel; a readout block configured to generate a pixel signal having a plurality of bits based on a result of comparing a plurality of sub pixel signals generated by each of the sub pixel groups with a reference voltage; and a control unit configured to control the pixel array and the readout block. Each of the sub pixels is a 1-transistor (1T) pixel that detects at least one photogenerated charge.

The sub pixels may be arranged in a matrix of “n” rows and “m” columns in each of the sub pixel groups. The readout block may include a comparator configured to compare sub pixel signals of each of the columns with the reference voltage to generate a comparison signal for each column, a counter configured to generate a count result by counting the comparison signal, and an adder configured to generate the pixel signal by adding count results generated for the respective columns.

The counter may be an asynchronous counter that receives the comparison signal as a clock signal.

The readout block may further include a capacitor configured to transmit the sub pixel signals to an input node of the comparator and a first reset switch configured to reset the input node of the comparator to a power supply voltage.

The readout block may further include a hole injection unit configured to sequentially increase a voltage of the input node of the comparator by a hole voltage.

The hole injection unit may include a plurality of hole injection transistors which are connected in series between the power supply voltage and the input node of the comparator.

The hole injection transistors may be P-channel metal oxide semiconductor (PMOS) transistors.

The readout block may further include a second switch configured to reset an output node of the comparator to a ground voltage.

A threshold voltage of the single transistor may be changed according to the at least one photogenerated charge.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages of the inventive concepts will become more apparent by describing in detail example embodiments thereof with reference to the attached drawings in which:

FIG. 1 is a block diagram of an image sensor according to some embodiments of the inventive concepts;

FIG. 2 is a block diagram of an image processing system including the image sensor illustrated in FIG. 1;

FIG. 3 is a detailed block diagram of a sub pixel in a pixel array illustrated in FIG. 2;

FIG. 4 is a diagram of a layout for forming the sub pixel illustrated in FIG. 3;

FIG. 5 is a diagram of a cross section of a semiconductor substrate taken in direction A in the layout illustrated in FIG. 4 according to some embodiments of the inventive concepts;

FIG. 6 is a diagram of a cross section of a semiconductor substrate taken in direction A in the layout illustrated in FIG. 4 according to another embodiment of the inventive concepts;

FIG. 7 is a diagram of a cross section of a semiconductor substrate taken in direction A in the layout illustrated in FIG. 4 according to a further embodiment of the inventive concepts;

FIG. 8 is a block diagram of a connection between the pixel array and a readout block illustrated in FIG. 2 according to some embodiments of the inventive concepts;

FIG. 9 is a block diagram of a connection between the pixel array and the readout block illustrated in FIG. 2 according to another embodiment of the inventive concepts;

FIG. 10 is a detailed block diagram of an example of a readout circuit illustrated in FIGS. 8 and 9;

FIG. 11 is a timing chart for explaining a comparison signal of a comparator illustrated in FIG. 10;

FIG. 12 is a detailed block diagram of a counter illustrated in FIG. 10;

FIG. 13 is a timing chart for explaining a count result of the counter illustrated in FIG. 10;

FIG. 14 is a detailed block diagram of another example of the readout circuit illustrated in FIGS. 8 and 9;

FIG. 15 is a detailed block diagram of a hole injection unit illustrated in FIG. 14;

FIGS. 16A and 16B are timing charts for explaining a comparison signal of a comparator illustrated in FIG. 14;

FIG. 17 is a detailed block diagram of a counter illustrated in FIG. 14;

FIG. 18 is a timing chart for explaining a count result of the counter illustrated in FIG. 14;

FIG. 19 is a flowchart of a method of operating the image sensor illustrated in FIG. 1 according to some embodiments of the inventive concepts;

FIG. 20A is a detailed flowchart of an operation of generating a pixel signal in the method illustrated in FIG. 19;

FIG. 20B illustrates a flow chart of the method of generating a pixel signal with the timing relationships shown, and with reference to FIG. 14.

FIG. 21 is a block diagram of an electronic system including an image sensor illustrated in FIG. 1 according to some embodiments of the inventive concepts; and

FIG. 22 is a block diagram of an electronic system including an image sensor illustrated in FIG. 1 according to other embodiments of the inventive concepts.

DETAILED DESCRIPTION OF THE EMBODIMENTS

The inventive concepts now will be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like numbers refer to like elements throughout.

It will be understood that when an element is referred to as being “connected” or “coupled” to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being “directly connected” or “directly coupled” to another element, there are no intervening elements present. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items and may be abbreviated as “/”.

It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first signal could be termed a second signal, and, similarly, a second signal could be termed a first signal without departing from the teachings of the disclosure.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises” and/or “comprising,” or “includes” and/or “including” when used in this specification, specify the presence of stated features, regions, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, regions, integers, steps, operations, elements, components, and/or groups thereof.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and/or the present disclosure, and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

FIG. 1 is a block diagram of an image sensor 100 according to some embodiments of the inventive concepts. FIG. 2 is a block diagram of an image processing system 10 including the image sensor 100 illustrated in FIG. 1.

Referring to FIGS. 1 and 2, the image processing system 10 may include the image sensor 100, a digital signal processor (DSP) 200, a display unit 300, and a lens 500. The image sensor 100 may include a pixel array 110, a control unit 150, and a readout block 190.

The pixel array 110 may include a plurality of sub pixels (130 in FIG. 3) that detect at least one photogenerated charge and generate a sub pixel signal in a digital form. The pixel array 110 may also include a plurality of sub pixel groups (e.g., first through fourth sub pixel groups in FIG. 8) that include a plurality of sub pixels 130 corresponding to a single pixel.

Each sub pixel 130 includes a single transistor (SX in FIG. 3) and a photoelectric conversion element such as a photo diode or a pinned photo diode. Each pixel includes a single transistor, thereby increasing the degree of integration of the image sensor 100. For instance, the image sensor 100 may include pixels having a size of 0.1×0.1 μm or less. The pixel array 110 senses light using a plurality of photoelectric conversion elements and converts the light into an electrical signal, thereby generating sub pixel signals. The operation of the sub pixels 130 will be described in detail with reference to FIG. 3 later.

The control unit 150 may generate a plurality of control signals for controlling the operations of the pixel array 110 and the readout block 190 and apply the control signals to the pixel array 110 and the readout block 190. The control unit 150 may include a row driver 160, a column driver 165, a timing generator 170, and a control register block 180.

The row driver 160 drives the pixel array 110 in row units. In detail, the same control signals, i.e., a gate signals (e.g., one of VG1 through VGn in FIG. 10) and a source signal (e.g., one of VS1 through VSn in FIG. 10) are applied to all pixels in one row. The row driver 160 may decode a control signal output from the timing generator 170 and then apply the control signal to each of the rows in the pixel array 110.

The pixel array 110 outputs a sub pixel signal from a row selected by the gate signals (VG1 through VGn in FIG. 10) and the source signals (VS1 through VSn in FIG. 10), which are provided from the row driver 160, to the readout block 190.

The column driver 165 may generate a plurality of control signals and control the operation of the readout block 190 according to the control of the timing generator 170. The control signals will be described in detail with reference to FIGS. 8 through 18 later.

The timing generator 170 may apply a control signal or a clock signal to the row driver 160 and the column driver 165 to control the operations or the timing of the row driver 160 and the column driver 165. The timing generator 170 may generate the control signal or the clock signal, which will be applied to the row driver 160 and the column driver 165, using a control signal CS, and a clock signal CLK, which are received from an external device (e.g., a host). At this time, the control register block 180 may be controlled by a camera control unit 210 to store or buffer the control signal CS and the clock signal CLK.

The readout block 190 generates a pixel signal PS, having a plurality of bits based on a result of comparing a plurality of sub pixel signals generated by each of the plurality of sub pixel groups (e.g., the first through fourth pixel groups in FIG. 8) with a reference voltage (e.g., Vref in FIG. 11), and outputs the pixel signal PS to the DSP 200. The DSP 200 may process the pixel signal PS, which has been sensed and output by the image sensor 100, to generate image data and may output the image data to the display unit 300.

The DSP 200 may include the camera control unit 210, an image signal processor (ISP) 220, and a personal computer interface (PC I/F) 230. The camera control unit 210 controls the control register block 180. At this time, the camera control unit 210 may control the control register block 180 using an inter-integrated circuit (I2C), but the scope of the inventive concepts is not restricted thereto.

The ISP 220 processes the pixel signal PS output from the readout block 190 into image data for people to view, and outputs the image data to the display unit 300 through the PC I/F 230. The ISP 220 may be implemented in a chip separated from the image sensor 100. In other embodiments, the ISP 220 and the image sensor 100 may be integrated into a single chip.

The display unit 300 may be any device that can output an image. For instance, the display unit 300 may be implemented as a computer, a mobile phone, a smart phone, or an image output terminal.

FIG. 3 is a detailed block diagram of a sub pixel 130 in the pixel array 110 illustrated in FIG. 2. Referring to FIGS. 1 through 3, the sub pixel 130 may include a single transistor SX and a photo diode PD. Although it is assumed that the photo diode PD is used as a photoelectric conversion element for clarity of the description, the scope of the inventive concepts is not restricted thereto.

The photo diode PD may have a first end connected to a ground and a second end connected to or electrically separated from the body of the single transistor SX. The photo diode PD may hold photogenerated charges, generated proportional to the intensity of incident light that has passed through the lens 500.

The single transistor SX has a source and a gate which are connected to the row driver 160 to receive a source signal VS (one of VS1 through VSn in FIGS. 10 and 14) and a gate signal VG (one of VG1 through VGn in FIGS. 10 and 14). The sub pixel 130 may have three operation modes, i.e., an integration mode, a reset mode, and a readout mode according to the source signal VS and the gate signal VG.

In the integration mode, among photogenerated charges (i.e., electrons and holes) generated by incident light, one type of photogenerated charge (i.e., electrons or holes) is accumulated in the photo diode PD. In order to induce photogenerated charge amplification using an avalanche effect in the integration mode, the source signal VS, the gate signal VG, and a substrate voltage may be a first integration voltage, a second integration voltage, and 0V, respectively. For instance, when the single transistor SX is a P-channel metal oxide semiconductor (PMOS) transistor, the first integration voltage may be 0 V and the second integration voltage may be a power supply voltage (VDD).

In the reset mode, the photogenerated charges accumulated in the photo diode PD are drained through a source or a drain. In the reset mode, the source signal VS, the gate signal VG, and the substrate voltage may be a first reset voltage, a second reset voltage, and 0V, respectively. For instance, when the single transistor SX is a PMOS transistor, the first reset voltage may be the power supply voltage VDD and the second reset voltage may be 0 V.

In the readout mode, a sub pixel signal corresponding to the photogenerated charges accumulated in the photo diode PD is output through a column line COL (one of COL1 through COLM in FIGS. 10 and 14). The sub pixel signal includes an image signal and a reset signal. The image signal is a signal output in the readout mode right after the integration mode, and the reset signal is a signal output in the readout mode right after the reset mode. For convenience sake, in the description, the description of the readout mode for the reset signal will be omitted.

In the readout mode, the body voltage of the signal transistor SX may be different depending on the photogenerated charges accumulated in the photo diode PD. The threshold voltage (Vth) of the single transistor SX may vary with the body voltage. When Vth of the single transistor SX changes, the same result as that obtained when a source voltage changes can be obtained. By using this principle, the sub pixel 130 may output a digital sub pixel signal having at least two levels.

In the readout mode, the source signal VS, the gate signal VG, and the substrate voltage may be a first read voltage, a second read voltage, and 0V, respectively. For instance, when the single transistor SX is a PMOS transistor, the first read voltage may be the power supply voltage VDD and the second read voltage may be a read voltage (VREAD in FIGS. 11 and 16A) lower than Vth of the single transistor SX when there is no influence from the photo diode PD.

When the single transistor SX enters the readout mode at the reception of voltage, the change in Vth of the single transistor SX according to the photogenerated charges accumulated at the photo diode PD may be sensed and a drain voltage may be output as a pixel signal. For instance, it is assumed that the single transistor SX is a PMOS transistor, Vth of the single transistor SX when there is no influence of the photo diode PD is 1 V and the read voltage (V_READ in FIGS. 11 and 16A) is 1.2 V. It is also assumed that Vth of the single transistor SX changes to 1.4 V when one photogenerated charge is generated by the photo diode PD. When one photogenerated charge is generated by the photo diode PD, the single transistor SX may be activated and a sub pixel signal may be output at a high level (e.g., 1 V). When there is no photogenerated charge generated by the photo diode PD, the single transistor SX may be deactivated and the sub pixel signal may be output at a low level (e.g., 0 V).

FIG. 4 is a diagram of a layout 130′ for forming the sub pixel 130 illustrated in FIG. 3. Referring to FIGS. 3 and 4, in the layout 130′, a source S, a gate G, and a drain D of the single transistor SX are sequentially formed and a channel 131 connecting the source S and the drain D is formed. In addition, a well layer 132 for electrical isolation from adjacent sub pixels (not shown) may be included in the layout 130′. Although not shown, a shallow trench isolation (STI) (not shown) for electrical isolation from another sub pixel adjacent to the current sub pixel 130 in a direction A or a direction perpendicular to the direction A may be included in the layout 130′.

FIG. 5 is a diagram of a cross section 130A-1 of a semiconductor substrate 140-1 taken in the direction A in the layout 130′ illustrated in FIG. 4 according to some embodiments of the inventive concepts. Referring to FIGS. 4 and 5, the cross section 130A-1 may include the source S, gate G and drain D of the single transistor SX, the channel 131, the well layer 132, a photo diode 133 (PD in FIG. 3), a gate insulating layer 134, a first epitaxial layer 135, and a second epitaxial layer 136. The semiconductor substrate 140-1 may be formed based on a silicon (Si) substrate.

The source S, gate G and drain D of the single transistor SX may function as the terminals of the single transistor SX. The source S and the drain D may be formed as a high-concentration doped region using ion implantation. When the single transistor SX is a PMOS transistor, the source S and the drain D may be a P region doped with P+ type impurities. Contrarily, when the single transistor is an N-channel metal oxide semiconductor (NMOS) transistor, the source S and the drain D may be an N region doped with N+ type impurities. The gate G may be formed using poly silicon.

The channel 131 may be formed to smooth the flow of carriers between the source S and the drain D of the single transistor SX. The carriers are holes when the single transistor SX is a PMOS transistor and the carriers are electrons when the single transistor SX is an NMOS transistor. The channel 131 is not essential but may be selectively formed. The channel 131 may be formed using Si, germanium (Ge), or SiGe.

The well layer 132 may be doped with N− type impurities when the single transistor SX is a PMOS transistor and may be doped with P− type impurities when the single transistor SX is an NMOS transistor.

The photo diode 133 may be formed in the well layer 132. The photo diode 133 may be doped with N type impurities when the single transistor SX is a PMOS transistor and may be doped with P type impurities when the single transistor SX is an NMOS transistor.

The gate insulating layer 134 may be formed for insulation between the gate G and the channel 131. The gate insulating layer 134 may be formed using SiO₂, SiON, SiN, Al₂O₃, Si₃N₄, Ge_xO_yN_z, Ge_xSi_yO_z, or a high dielectric constant material. The high dielectric constant material may be formed using atomic layer deposition of HfO₂, ZrO₂, Al₂O₃, Ta₂O₅, hafnium silicate, zirconium silicate, or a combination thereof.

The first epitaxial layer 135 and the second epitaxial layer 136 may be formed using an epitaxial growth method. When the single transistor SX is a PMOS transistor, the first and second epitaxial layers 135 and 136 may be doped with P− type and P+ type impurities, respectively. Contrarily, when the single transistor SX is an NMOS transistor, the first and second epitaxial layers 135 and 136 may be doped with N− type and N+ type impurities, respectively.

Although not shown in FIG. 5, conducting wires for the operation of the pixel array 110, i.e., conducting wires for connection with the row driver 160 and the readout block 190 may be formed on the source S, the gate G, and the drain D to use back side illumination (BSI) that increases the light guiding efficiency of the photo diode 133.

FIG. 6 is a diagram of a cross section 130A-2 of a semiconductor substrate 140-2 taken in the direction A in the layout 130′ illustrated in FIG. 4 according to another embodiment of the inventive concepts. Referring to FIGS. 4 through 6, the gate G may be embedded in the semiconductor substrate 140-2 using an etching process in the cross section 130A-2. In other words, the semiconductor substrate 140-2 may have a recess gate structure.

Accordingly, the channel 131 is also embedded in the semiconductor substrate 140-2, so that the photo diode 133 is formed within the semiconductor substrate 140-2. Therefore, the distance from the photo diode 133 to the source S or the drain D increases. When the distance between the photo diode 133 and the source S or the drain D increases, the influence of the photo diode 133 to the channel 131 can be increased.

In particular, in an ultrasmall pixel structure in which the length of the gate G is 50 nm or less, the distance from the photo diode 133 to the source S or the drain D is very close, obstructing the smooth operation of the single transistor SX. In other words, when the length of the gate G is 50 nm or less, the distance between the photo diode 133 and the source S or the drain D is so close that the influence of the photo diode 133 to the channel 131 can be decreased. As a result, a pixel signal insensitive to the photogenerated charges accumulated in the photo diode 133 may be generated. Therefore, when the image sensor 100 is implemented using microscopic pixels, the pixel array 110 may be formed in the recess gate structure.

Apart from the above-described differences, the semiconductor substrate 140-2 illustrated in FIG. 6 is substantially the same as the semiconductor substrate 140-1 illustrated in FIG. 5.

FIG. 7 is a diagram of a cross section 130A-3 of a semiconductor substrate 140-3 taken in the direction A in the layout 130′ illustrated in FIG. 4 according to a further embodiment of the inventive concepts. Referring to FIGS. 4 through 7, the gate G in the cross section 130A-3 may be formed in the recess gate structure, as in the cross section 130A-2 illustrated in FIG. 6.

The photo diode 133 may be formed closer to the drain D than to the source S around the gate G. In other words, the photo diode 133 may be formed in an asymmetric structure with respect to the gate G. In other embodiments, the photo diode 133 may be formed closer to the source S than to the drain D.

When the photo diode 133 is formed as shown in FIG. 7, the entire size of the photo diode 133 may be decreased. When the entire size of the photo diode 133 decreases, the distance between photogenerated charges accumulated in the photo diode 133 and the channel 131 also decreases, and therefore, the influence of the photo diode 133 to the channel 131 increases according to Coulomb's law.

In particular, the recess gate structure in which the photo diode 133 is formed asymmetrically with respect to the gate G as shown in FIG. 7 in an ultrasmall pixel structure having the gate G 32 nm or less in length may have higher photoelectric conversion gain (mV/e−) and higher resistance change (%/e−) than the simple recess gate structure illustrated in FIG. 6. For instance, in an ultrasmall pixel structure, in which the length of the gate G is 22 nm, a single photogenerated charge may generate a conversion voltage of about 60 mV and a resistance change of about 18%.

FIG. 8 is a block diagram of a connection between the pixel array 110 and the readout block 190 illustrated in FIG. 2 according to some embodiments of the inventive concepts. Referring to FIGS. 2 and 8, the pixel array 110 may include a plurality of sub pixel groups, i.e., first through fourth sub pixel groups 115 arranged in a matrix. Although it is illustrated in FIG. 8 that the pixel array 110 includes four sub pixel groups 115 for convenience sake in the description, the scope of the inventive concepts is not restricted thereto.

Each of the sub pixel groups 115 corresponds to a single pixel. For example, each of the sub pixel groups 115 may correspond to one of red (R), green (Ga, Gb) and blue (B) pixels arranged in a Bayer pattern. The sub pixel groups 115 may be controlled by a control signal output from the row driver 160 to output sub pixel signals.

The readout block 190 may include a readout circuit unit 191 and a memory unit 195. The readout circuit unit 191 includes a plurality of readout circuits 192 connected to the sub pixel groups 115, respectively. Each of the readout circuits 192 receives sub pixel signals from a sub pixel group 115 connected to each readout circuit 192 among the sub pixel groups 115 and generates and output a pixel signal having a plurality of bits to the memory unit 195. The structure and operations of the readout circuits 192 will be described in detail with reference to FIGS. 10 through 18 later.

The memory unit 195 includes a plurality of memories 196 respectively connected to the readout circuits 192. Each of the memories 196 may receive a pixel signal from a corresponding one of the readout circuits 192 and store the pixel signal. The memories 196 may sequentially output pixel signals stored therein to the DSP 200 according to a column selection signal (not shown) output from the column driver 165.

FIG. 9 is a block diagram of a connection between the pixel array 110 and the readout block 190 illustrated in FIG. 2 according to another embodiment of the inventive concepts. Referring to FIGS. 2, 8, and 9, a readout block 190′ may also include a switching unit 197 between the pixel array 110 and a readout circuit unit 191′.

The switching unit 197 may include a first switch SW1 and a second switch SW2 provided to respectively correspond to columns for the sub pixel groups 115 arranged in a matrix. For instance, the first switch SW1 is formed to correspond to the first and second sub pixel groups 115 in the same column among the first through fourth sub pixel groups 115. The first and second switches SW1 and SW2 may be controlled by a switching control signal (not shown) output from the column driver 165 to simultaneously connect sub pixel groups 115 in the same row among the first through fourth sub pixel groups 115 to the readout circuit unit 191′.

For instance, when the switching control signal is at a high level, the first and second switches SW1 and SW2 may connect the first and third sub pixel groups 115 to the readout circuit unit 191′. When the switching control signal is at a low level, the first and second switches SW1 and SW2 may connect the second and fourth sub pixel groups 115 to the readout circuit unit 191′.

Accordingly, the readout circuit unit 191′ includes fewer readout circuits 192′ than the readout circuit unit 191 illustrated in FIG. 8 and a memory unit 195′ includes fewer memories 196′ than the memory unit 195 illustrated in FIG. 8. In other words, the readout block 190′ illustrated in FIG. 9 includes only single readout circuit 192′ and single memory 196′ per one color of sub pixel groups, thereby increasing the degree of integrition and reducing power consumption in the image sensor 100.

FIG. 10 is a detailed block diagram of an example 192-1 of the readout circuits 192 and 192′ illustrated in FIGS. 8 and 9. Referring to FIGS. 8 through 10, the first sub pixel group 115 illustrated in FIG. 10 corresponds to the first sub pixel group 115 illustrated in FIGS. 8 and 9. The first sub pixel group 115 includes a plurality of sub pixels 130 in a matrix of “n” rows and “m” columns.

The source and the gate of a single transistor SX in each of the sub pixels 130 may respectively receive one of the source signals VS1 through VSn and one of the gate signals VG1 though VGn. The drain of the single transistor SX may be connected to one of first through m-th column lines COL1 through COLm. First through m-th transistors X1 through Xm are connected between the power supply voltage VDD and the respective first through m-th column lines COL1 through COLm. The first through m-th transistors X1 through Xm function as resistors and contribute to increasing the degree of integrition of the image sensor 100.

The readout circuit 192-1 may include a plurality of capacitors C1 through Cm, a plurality of first reset switches RSW1, a plurality of comparators 193-1, a plurality of counters 194-1, and an adder 198-1.

The capacitors C1 through Cm are connected between the respective first through m-th column lines COL1 through COLm and respective first through m-th nodes N1 through Nm. The first through m-th nodes N1 through Nm correspond to input nodes of the respective comparators 193-1. The capacitors C1 through Cm transmit sub pixel signals output from the first through m-th column lines COL1 through COLm to the first through m-th nodes N1 through Nm. In other words, each of the capacitors C1 through Cm sets a voltage level of a corresponding one of the first through m-th nodes N1 through Nm to a voltage level obtained by subtracting a difference between a voltage level of a corresponding one of the first through m-th column lines COL1 through COLm and the power supply voltage VDD from the power supply voltage VDD.

The first reset switches RSW1 may reset the first through m-th nodes N1 through Nm, respectively, to the power supply voltage VDD according to a first reset signal Si output from the column driver 165. Since the first reset switches RSW1 reset the first through m-th nodes N1 through Nm to the power supply voltage VDD, comparison signals COMP1 through COMPm respectively output from the comparators 193-1 can have a pulse shape.

Each of the comparators 193-1 may compare a reference voltage Vref output from the column driver 165 with one of comparator input voltages INN1 through INNm (i.e., voltages of the respective first through m-th nodes N1 through Nm), and may generate one of the comparison signals COMP1 through COMPm according to the comparison result. The counters 194-1 may respectively count the comparison signals COMP1 through COMPm in response to a counter enable signal EN_C output from the column driver 165 and may respectively generate count results. Each of the count results is a digital signal having a plurality of bits.

The adder 198-1 may add the count results of the counters 194-1 and generate a pixel signal. In other words, the pixel signal is a result of adding all digital values corresponding to sub pixel signals of the sub pixels 130 included in the first sub pixel group 115.

Although only the first sub pixel group 115 and the readout circuit 192-1 connected to the first sub pixel group 115 have been described, the structures and operations of all sub pixel groups and readout circuits are the same as one another.

FIG. 11 is a timing chart for explaining the comparison signal COMP1 of a comparator 193-1 illustrated in FIG. 10. It is presumed that the single transistor SX of each of the sub pixels 130 included in the first sub pixel group 115 is a PMOS transistor.

Referring to FIGS. 8 through 11, in a reset period _tRESET, the source signals VS1 through VSn input to the respective rows of the first sub pixel group 115 have a level of the power supply voltage VDD and the gate signals VG1 through VGn input to the respective rows have a level of 0 V. In the reset period t_RESET, photogenerated charges accumulated in the photo diode PD of each sub pixel 130 included in the first sub pixel group 115 are eliminated.

In an integration period t_INT, the source signals VS1 through VSn input to the respective rows of the first sub pixel group 115 have the level of 0 V and the gate signals VG1 through VGn input to the respective rows have the level of the power supply voltage VDD. In the integration period t_INT, photogenerated charges corresponding to light incident through the lens 500 are accumulated in the photo diode PD of each sub pixel 130 included in the first sub pixel group 115.

In a readout period t_READ, the source signals VS1 through VSn input to the respective rows of the first sub pixel group 115 sequentially have the level of the power supply voltage VDD and the gate signals VG1 through VGn input to the respective rows sequentially have the level of the read voltage V_READ.

When one of the source signals VS1 through VSn input to the respective rows of the first sub pixel group 115 has the level of the power supply voltage VDD and one of the gate signals VG1 through VGn input to the respective rows has the level of the read voltage V_READ, it is defined as a row readout period (one of t_READ1 through t_READn) for a current row. Accordingly, in each of the row readout periods t_READ1 through t_READn, sub pixel signals of the respective sub pixels 130 in a current row are sequentially output through the column lines COL1 through COLm, respectively.

For convenience sake in the description, only the capacitor C1, the first reset switch RSW1, the comparator 193-1, and the counter 194-1, which are connected to the first column line COL1 among the column lines COL1 through COLm, will be described; but the structure and operations of the elements connected to the other column lines COL2 through COLm are the same as those of the elements C1, RSW1, 193-1, and 194-1 connected to the first column line COL1.

In the first row readout period t_READ1, the first reset signal S1 may be at a low level for a a desired (or, alternatively a predetermined) period of time and then transit to a high level. In the same manner, in each of the second through n-th row readout periods t_READ2 through t_READn, the first reset signal S1 may be at the low level for the a desired (or, alternatively a predetermined) period of time and then transit to the high level. It is assumed that the a desired (or, alternatively a predetermined) period of time is ½ of the first row readout period t_READ1 for convenience sake in the description, but the scope of the inventive concepts is not restricted thereto.

In the first row readout period t_READ1, the first comparator input voltage INN1 has a level corresponding to a sub pixel signal input through the capacitor C1. It is assumed that the initial value of the first comparator input voltage INN1 in the first row readout period t_READ1 has a lower level than the reference voltage Vref. When the first reset signal Si transits to the high level after the a desired (or, alternatively a predetermined) period of time elapses, the first reset switch RSW1 is short-circuited and the first node N1 has the level of the power supply voltage VDD. Accordingly, the first comparator input voltage INN1 is changed from a level lower than the reference voltage Vref to the level of the power supply voltage VDD in the first row readout period t_READ1. Therefore, the first comparison signal COMP1 corresponding to a result of comparing the first comparator input voltage INN1 with the reference voltage Vref has a pulse shape changing from a high level to a low level in the first row readout period t_READ1.

In the second row readout period t_READ2, the first comparator input voltage INN1 has a level corresponding to a sub pixel signal input through the capacitor C1. It is assumed that the initial value of the first comparator input voltage INN1 in the second row readout period t_READ2 has a higher level than the reference voltage Vref. When the first reset signal S1 transits to the high level after the a desired (or, alternatively a predetermined) period of time elapses, the first reset switch RSW1 is short-circuited and the first node N1 has the level of the power supply voltage VDD. Accordingly, the first comparator input voltage INN1 is changed to the level of the power supply voltage VDD in the second row readout period t_READ2. Therefore, the first comparison signal COMP1 corresponding to a result of comparing the first comparator input voltage INN1 with the reference voltage Vref remains at the low level in the second row readout period t_READ2.

In other words, in the row readout periods t_READ1 through t_READn, the first comparison signal COMP1 has a pulse shape when a sub pixel signal has a lower level than the reference voltage Vref and remains at the low level when the sub pixel signal has a higher level than the reference voltage Vref.

FIG. 12 is a detailed block diagram of the counter 194-1 illustrated in FIG. 10. Referring to FIGS. 10 through 12, the counter 194-1 may include an AND gate 20 and a plurality of D flip-flops 22, 24, 26, and 28. For convenience sake in the description, the counter 194-1 connected to the first column line COL1 will be described as an example.

The AND gate 20 receives the first comparison signal COMP1 and the counter enable signal EN_C and performs an AND operation. Accordingly, only when the counter enable signal EN_C is at a high level, is the first comparison signal COMP1 input to the first flip-flop 22 as a clock signal. In each of the D flip-flops 22, 24, 26, and 28, a data input terminal D and an inverting output terminal QB are connected with each other, and an output terminal Q outputs a bit in a count result. In other words, the first through fourth flip-flops 22, 24, 26, and 28 output first through fourth bits bit<0> through bit<3>, respectively. The output terminal Q of each of the first through third flip-flops 22, 24, and 26 is connected to a clock terminal CLK of a following flip-flop 24, 26, or 28.

The D flip-flops 22, 24, 26, and 28 change the level of an output value at a falling edge of a signal input to the clock terminal CLK. In other words, the counter 194-1 may be implemented as an asynchronous counter that receives the first comparison signal COMP1 as a clock signal.

The number of flip-flops included in the counter 194-1 is determined depending on the number of sub pixels 130 in a column of the first sub pixel group 115 and the number of levels that each sub pixel 130 can have. For instance, when the number of sub pixels 130 in a column of the first sub pixel group 115, connected with the counter 194-1, is 8 and the number of levels that each sub pixel 130 can have is 2, 8*2=16 data values are generated. Since four binary bits (i.e., 2⁴=16) are needed to represent 16 data values, at least four flip-flops are required.

FIG. 13 is a timing chart for explaining a count result of the counter 194-1 illustrated in FIG. 10. Referring to FIGS. 10 through 13, it is assumed that the number of sub pixels 130 in a column of the first sub pixel group 115 connected with the counter 194-1 is 8 and the number of levels that each of the sub pixels 130 can have is 2. In other words, there are first through eighth row readout periods t_READ1 through t_READ8.

The counter enable signal EN_C is at a high level from before the first row readout period t_READ1 till after the n-th row readout period t_READn. Since each sub pixel 130 can have two levels, it is defined that the level of each sub pixel 130 is 1 when the level of a sub pixel signal corresponding to photogenerated charges accumulated at the photo diode PD of the sub pixel 130 is lower than the reference voltage Vref and the level of the sub pixel 130 is 0 when the level of the sub pixel signal is higher than the reference voltage Vref.

FIG. 13 shows a case where the sub pixels 130 sequentially have levels of 1, 1, 0, 1, 0, 0, 1, and 1 in a column direction. Accordingly, the first comparison signal COMP1 has a pulse shape in the first, second, fourth, seventh and eighth row readout periods t_READ1, t_READ2, t_READ4, t_READ7, and t_READ8.

The level of the first bit <0> of the first flip-flop 22 is changed at falling edges of the first comparison signal COMP1. The level of the second bit <1> of the second flip-flop 24 is changed at falling edges of the first bit <0>. The level of the third bit <2> of the third flip-flop 26 is changed at falling edges of the second bit <1>. The level of the fourth bit <3> of the fourth flip-flop 28 is changed at falling edges of the third bit <2>.

Accordingly, a binary count result output after the eighth row readout period t_READ8 includes the first bit <0> (i.e., a place of 1) at a high level, the second bit <1> (i.e., a place of 2¹) at a low level, the third bit <2> (i.e., a place of 2²) at a high level, and the fourth bit <3> (i.e., a place of 2³) at a low level. When the count result is converted into a decimal number, it becomes 5. This is the same as the number of pulse shapes included in the first comparison signal COMP1, that is, the number of the sub pixels 130 having a level of 1.

FIG. 14 is a detailed block diagram of another example 192-2 of the readout circuits 192 and 192′ illustrated in FIGS. 8 and 9. FIG. 15 is a detailed block diagram of a hole injection unit 199 illustrated in FIG. 14. Referring to FIGS. 8 through 10 and FIGS. 14 and 15, the readout circuit 192-2 may further include a plurality of hole injection units 199 and a plurality of second reset switches RSW2.

The hole injection units 199 are connected to the first through m-th nodes N1 through Nm, respectively. The hole injection units 199 may sequentially increase the comparator input voltages INN1 through INNm, respectively, by a hole voltage (ΔV_h in FIG. 16B).

FIG. 15 shows a hole injection unit 199 connected to the first node N1 among the hole injection units 199. The hole injection unit 199 includes a plurality of hole injection transistors HX1 through HX3 connected in series between the power supply voltage VDD and the first node N1.

The hole injection transistors HX1 through HX3 may be sequentially turned on in response to third through fifth signals S3 through S5, respectively. The hole injection transistors HX1 through HX3 may transmit positive holes determined by the timing of the third through fifth signals S3 through S5 to the first node N1.

The second reset switches RSW2 may reset an output node of each comparator 193-2 to a ground voltage VSS (e.g., 0 V) according to a second reset signal S2 output from the column driver 165. Since the second reset switches RSW2 reset the output node of each comparator 193-2 to the ground voltage VSS, the comparison signals COMP1 through COMPm output from the respective comparators 193-2 have a pulse shape before the first reset signal S1 transits to the high level in the row readout periods t_READ1 through t_READn.

FIGS. 16A and 16B are timing charts for explaining the comparison signal COMP1 of the comparator 192-2 illustrated in FIG. 14. Referring to FIGS. 8 through 11 and FIGS. 14 through 16B, the source signals VS1 through VSn and the gate signals VG1 and VGn input to the respective rows of the first sub pixel group 115 in the reset period t_RESET, the integration period t_INT, and the readout period t_READ illustrated in FIG. 16A are substantially the same as those illustrated in FIG. 11.

For convenience sake in the description, only the first and second row readout periods t_READ1 and t_READ2 are illustrated. It is assumed that each of the hole injection transistors HX1 through HX3 is implemented as a PMOS transistor. Also, it is assumed that the number of levels that each sub pixel 130 can have is 4. In other words, it is assumed that each sub pixel 130 can have first through fourth levels and that the sub pixel 130 has the first level when the photo diode PD detects zero photogenerated charges, the second level when the photo diode PD detects one photogenerated charge, the third level when the photo diode PD detects two photogenerated charges, and the fourth level when the photo diode PD detects three photogenerated charges.

After a a desired (or, alternatively a predetermined) period of time since the start of the first row readout period t_READ1, the third through fifth signals S3 through S5 may sequentially transit to a low level. While the third through fifth signals S3 through S5 are at the low level, the hole injection transistors HX1 through HX3 respectively transmit holes from the power supply voltage VDD to the first node N1. The number of holes is determined depending on the length of a period in which the third through fifth signals S3 through S5 is at the low level and the length of a period in which the third through fifth signals S3 through S5 overlap one another.

A change occurring in the first comparator input voltage INN1 due to the operation of the hole injection transistors HX1 through HX3 is defined as the hole voltage ΔV_h. The initial value of the first comparator input voltage INN1 is the VDD level when the sub pixel 130 has the first level, a VDD−ΔV level when the sub pixel 130 has the second level, a VDD−2ΔV level when the sub pixel 130 has the third level, and a VDD−3ΔV level when the sub pixel 130 has the fourth level. At this time, ΔV is defined as a unit voltage.

In the first row readout period t_READ1, the initial value of the first comparator input voltage INN1 is the VDD−3ΔV level and the reference voltage Vref is higher than the first comparator input voltage INN1, and therefore, the first comparison signal COMP1 is at the high level. Thereafter, when the second reset signal S2 transits the high level, the second reset switch RSW2 is short-circuited so that the output node of the comparator 193-2 is reset to the ground voltage VSS (e.g., 0 V). Therefore, the first comparison signal COMP1 has a pulse shape.

When a period in which the third through fifth signals S3 through S5 sequentially transit to the low level and remain at the low level ends, that is, at a time point t2, the first comparator input voltage INN1 is increased by the hole voltage ΔV_h. Since the first comparator input voltage INN1 has the VDD−3ΔV+ΔV_h level and the reference voltage Vref is higher than the first comparator input voltage INN1, the first comparison signal COMP1 transits to the high level. Thereafter, when the second reset signal S2 transits the high level, the second reset switch RSW2 is short-circuited so that the output node of the comparator 193-2 is reset to the ground voltage VSS (e.g., 0 V). Therefore, the first comparison signal COMP1 has a pulse shape.

When another period in which the third through fifth signals S3 through S5 sequentially transit to the low level and remain at the low level ends, that is, at a time point t3, the first comparator input voltage INN1 is increased by the hole voltage ΔV_h. Since the first comparator input voltage INN1 has the VDD−3ΔV+2ΔV_h level and the reference voltage Vref is still higher than the first comparator input voltage INN1, the first comparison signal COMP1 transits to the high level. Thereafter, when the second reset signal S2 transits the high level, the second reset switch RSW2 is short-circuited so that the output node of the comparator 193-2 is reset to the ground voltage VSS (e.g., 0 V). Therefore, the first comparison signal COMP1 has a pulse shape.

Thereafter, when the first reset signal 51 transits from the low level to the high level after the a desired (or, alternatively a predetermined) period of time, the first comparator input voltage INN1 has the VDD level. At this time, VDD−3ΔV+2ΔV_h<Vref needs to be satisfied to distinguish the third level from the fourth level, and therefore, the hole voltage ΔV_h needs to meet the condition of ΔV_h<(3ΔV+Vref−VDD)/2. Accordingly, the sub pixel 130 has the fourth level in the first row readout period t_READ1, and therefore, the initial value of the first comparator input voltage INN1 is the VDD−3ΔV level and the first comparison signal COMP1 has three pulse shapes.

In the second row readout period t_READ2, the first reset signal S1, the second reset signal S2, and the third through fifth signals S3 through S5 may be applied in the same manner as in the first row readout period t_READ1. Accordingly, the sub pixel 130 has the second level in the second row readout period t_READ2, and therefore, the initial value of the first comparator input voltage INN1 is the VDD−ΔV level and the first comparison signal COMP1 has one pulse shape.

Consequently, when the sub pixel 130 has the first through fourth levels, the first comparison signal COMP1 has zero through three pulse shapes.

FIG. 17 is a detailed block diagram of a counter 194-2 illustrated in FIG. 14. Referring to FIGS. 10 through 12 and FIGS. 14 through 17, the counter 194-2 may include an AND gate 30 and a plurality of D flip-flops 32, 34, 36, 38, and 40. For convenience sake in the description, the counter 194-2 connected to the first column line COL1 will be described as an example. It is also assumed that the number of sub pixels 130 in a column of the first sub pixel group 115 connected with the counter 194-2 is 8 and the number of levels that each sub pixel 130 can have is 4.

The structures and operations of the AND gate 30 and the D flip-flops 32, 34, 36, 38, and 40 are substantially the same as those of the AND gate 20 and the D flip-flops 22, 24, 26, and 28 illustrated in FIG. 12. However, unlike the embodiment illustrated in FIG. 12, the embodiment illustrated in FIG. 17 additionally includes the fifth flip-flop 40, so that the counter 194-2 may generate a count result having first through fifth bits <0> through <4>.

When the number of sub pixels 130 in a column of the first sub pixel group 115 connected with the counter 194-2 is 8 and the number of levels that each sub pixel 130 can have is 4, 8*4=32 data values are generated. Since five binary bits (i.e., 2⁵=32) are needed to represent 32 data values, at least five flip-flops are required.

FIG. 18 is a timing chart for explaining a count result of the counter 194-2 illustrated in FIG. 14. Referring to FIGS. 10 through 12 and FIGS. 14 through 18, the counter enable signal EN_C is at a high level from before the first row readout period t_READ1 till after the n-th row readout period t_READn. Since each sub pixel 130 can have four levels, it is defined that the first through fourth levels of each sub pixel 130 are defined as 0, 1, 2, and 3, respectively.

FIG. 18 shows a case where the sub pixels 130 sequentially have levels of 3, 1, 0, 2, 0, 0, 3, and 1 in a column direction. Accordingly, the first comparison signal COMP1 has 3, 1, 2, 3 and 1 pulse shapes in the first, second, fourth, seventh and eighth row readout periods t_READ1, t_READ2, t_READ4, t_READ7, and t_READ8, respectively.

The level of the first bit <0> of the first flip-flop 32 is changed at falling edges of the first comparison signal COMP1. The level of the second bit <1> of the second flip-flop 34 is changed at falling edges of the first bit <0>. The level of the third bit <2> of the third flip-flop 36 is changed at falling edges of the second bit <1>. The level of the fourth bit <3> of the fourth flip-flop 38 is changed at falling edges of the third bit <2>. The level of the fifth bit <4> of the fifth flip-flop 40 is changed at falling edges of the fourth bit <3>.

Accordingly, a binary count result output after the eighth row readout period t_READ8 includes the first bit <0> (i.e., a place of 1) at a low level, the second bit <1> (i.e., a place of 2¹) at a high level, the third bit <2> (i.e., a place of 2²) at a low level, the fourth bit <3> (i.e., a place of 2³) at a high level, and the fifth bit <4> (i.e., a place of 2⁴) at a low level. When the count result is converted into a decimal number, it becomes 10, which is the same as the number of pulse shapes included in the first comparison signal COMP1, that is, the sum of all levels appearing when the sub pixels 130 have the levels of 0 through 3.

As described above, when the image sensor 100 according to some embodiments of the inventive concepts is used, sub pixel signals of 1T pixels having a plurality of levels can be precisely read in a digital pixel signal corresponding to the plurality of levels.

FIG. 19 is a flowchart of a method of operating the image sensor 100 illustrated in FIG. 1 according to some embodiments of the inventive concepts. FIG. 20A is a detailed flowchart of an operation of generating a pixel signal in the method illustrated in FIG. 19.

Referring to FIGS. 1 through 20, a sub pixel group (e.g., the first sub pixel group) 115 including some sub pixels 130 corresponding to a single pixel among a plurality of the sub pixels 130 may generate a plurality of sub pixel signals in operation S10. The readout block 190 may generate the pixel signal PS having a plurality of bits based on a result of comparing the sub pixel signals with the reference voltage Vref in operation S20. Operation S20 may include operations S21 through S27 shown in FIG. 20A.

The capacitors C1 through Cm may transmit a plurality of sub pixel signals from the first through m-th column lines COL1 through COLm to the input nodes, i.e., the first through m-th nodes N1 through Nm of the respective comparators 193-1 or 193-2 in operation S21. When the readout block 190 detects sub pixel signals having at least four levels (e.g., the case illustrated in FIG. 14), the hole injection unit 199 may sequentially increase the voltage INN1 of the input node N1 of the comparator 193-2 by the hole voltage ΔV_h in operation S22.

The first reset switch RSW1 may reset the input node N1 of the comparator 193-1 or 193-2 to the power supply voltage VDD in operation S23. The comparator 193-1 or 193-2 may compare the sub pixel signals with the reference voltage Vref and generate the comparison signal COMP1 in operation S24.

When the readout block 190 detects sub pixel signals having at least four levels (e.g., the case illustrated in FIG. 14), the second reset switches RSW2 may reset the output nodes of the respective comparators 193-2 to the ground voltage VSS (e.g., 0 V) so that the comparison signal COMP1 has a pulse shape before the first reset signal S1 transits to the high level in the row readout periods t_READ1 through t_READn in operation S25.

The counter 194-1 or 194-2 may count the comparison signal COMP1 and generate a count result in operation S26. The adder 198-1 or 198-2 may add count results generated with respect to the column lines COL1 through COLm, respectively, to generate the pixel signal PS in operation S27.

FIG. 20A explains the operations performed, but as will be appreciated from the previous portions of this disclosure does not convey the timing relationship of the operations. Instead, FIG. 20B illustrates a flow chart of the method of generating a pixel signal with the timing relationship shown and with reference to FIG. 14.

As will be understood from FIG. 16B, after a read portion of a readout time period t_READ#, the first reset signal S1 transition to the high level, switches RSW2 close, and the input nodes N1-Nm of the comparators COMP1 to COMPm are reset to VDD. Accordingly, this is the state of the input nodes N1-Nm when the first reset signal S1 transitions to low level at the beginning of a readout time period t_READ#.

As shown, in step S30, the sub pixel signals output from the first through m-th column lines COL1 to COLm are respectively transmitted by the capacitors C1 to Cm to the input nodes NN1 to NNm of comparators COMP1 to COMPm. Each comparator C1 to Cm determines whether the voltage at the respective input node NN1 to NNm exceeds a reference voltage Vref in step S35.

Steps S35-S70 will be described for a single comparator COMP1, but it will be understood that this description applies to each of the comparators COMP1 to COMPm. If the determination in step S35 is negative, the comparator COMP1 generates a high level output, which increments the counter 194 in step S45. The output of the comparator COMP1 is then reset to a low level in step S50 for a period of time by reset switch RSW2 connecting the output of the comparator COMP1 to ground VSS in response to the second reset signal S2. The hole injection unit 199 associated with the comparator COMP1 then injects holes into the input node INN1 in step S55. This injection increases the voltage at the input node INN1 as shown in FIG. 16B according to third through fifth signal S3 through S5. The method returns to S35, and the comparator COMP1 again compares the voltage at input node INN1 to the reference voltage Vref. Accordingly, the count value produced by the counter 194 is based on a duration that the voltage at the input node INN1, which corresponds to the respective sub pixel signal, is less than the reference voltage V_ref. If the determination in step S35 is positive, then no further incrementing of the counter 194 takes place.

And, once the first reset signal S1 transitions to the high level after the read portion of the readout time period t_READ#, step S60, the input nodes INN1 to INNm are reset to VDD in step S65. As will be appreciated the read portion of the readout time period t_READ# is set such that the comparisons and counter increments complete prior to this reset operation. The adder 198 counts the counter values received from the counters 198 as described previously, and outputs the accumulated count values as the pixel signal in step S70.

FIG. 21 is a block diagram of an electronic system including an image sensor illustrated in FIG. 1 according to some embodiments of the inventive concept. Referring to FIGS. 1 and 21, the electronic system 2100 may be implemented by a data processing apparatus, such as a mobile phone, a personal digital assistant (PDA), a portable media player (PMP), an IP TV, or a smart phone that can use or support the MIPI interface. The electronic system 2100 includes the image sensor 100, an application processor 2110 and a display 2150.

A camera serial interface (CSI) host 2112 included in the application processor 2110 performs serial communication with a CSI device 2141 included in the image sensor 100 through CSI. For example, an optical de-serializer (DES) may be implemented in the CSI host 2112, and an optical serializer (SER) may be implemented in the CSI device 2141.

A display serial interface (DSI) host 2111 included in the application processor 2110 performs serial communication with a DSI device 2151 included in the display 2150 through DSI. For example, an optical serializer may be implemented in the DSI host 2111, and an optical de-serializer may be implemented in the DSI device 2151.

The electronic system 2100 may also include a radio frequency (RF) chip 2160, which communicates with the application processor 2110. A physical layer (PHY) 2113 of the electronic system 2100 and a PHY 2161 of the RF chip 2160 communicate data with each other according to a MIPI DigRF standard. The electronic system 2100 may further include at least one element among a GPS 2120, a storage device 2170, a microphone 2180, a DRAM 2185 and a speaker 2190. The electronic system 2100 may communicate using Wimax (World Interoperability for Microwave Access) 2191, WLAN (Wireless LAN) 2193 or UWB (Ultra Wideband) 2195 etc.

FIG. 22 is a block diagram of an electronic system including an image sensor illustrated in FIG. 1 according to other embodiments of the inventive concepts. Referring to FIGS. 1 and 22, the electronic system 2200 includes the image sensor 100, a processor 2210, a memory 2220, a display unit 2230 and an interface 2240.

The processor 2210 may control the operation of the image sensor 100. For example, the processor 2210 may process pixel signals output from the image sensor 100 and generate image data.

The memory 2220 may store a program for controlling the image sensor 100 and the image data generated by the processor 2210. The processor 2210 may execute the program stored in the memory 2220. For example, the memory 2220 may be implemented by a volatile or non-volatile memory.

The display unit 2230 may display the image data output from the processor 2210 or the memory 2220. For example, the display unit 2230 may be a liquid crystal display (LCD), a light emitting diode (LED) display, an organic LED (OLED) display, an active matrix organic light emitting diodes (AMOLED) display or a flexible display.

The interface 2240 may be implemented as an interface for inputting and outputting the image data. For example, the interface 2240 may be implemented by a wireless interface.

The present general inventive concepts can also be embodied as computer-readable codes on a computer-readable medium. The computer-readable recording medium is any data storage device that can store data as a program, which can be thereafter read by a computer system. Examples of the computer-readable recording medium include read-only memory (ROM), random-access memory (RAM), CD-ROMs, magnetic tapes, floppy disks, and optical data storage devices.

The computer-readable recording medium can also be distributed over network coupled computer systems so that the computer-readable code is stored and executed in a distributed fashion. Also, functional programs, codes, and code segments to accomplish the present general inventive concepts can be easily construed by programmers.

As described above, according to some embodiments of the inventive concepts, an image sensor can precisely read sub pixel signals of 1T pixels having a plurality of levels in a digital pixel signal.

While the inventive concepts have been particularly shown and described with reference to example embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in forms and details may be made therein without departing from the spirit and scope of the inventive concepts as defined by the following claims.

Claims

1. A method of operating an image sensor, the method comprising:

generating a plurality of sub pixel signals using a sub pixel group, the sub pixel group including a plurality of sub pixels and corresponding to a single pixel; and

generating a pixel signal having a plurality of bits based on a result of comparing the sub pixel signals with a reference voltage,

wherein each of the sub pixels is a 1-transistor (1T) pixel that detects at least one photogenerated charge and includes only one transistor.

2. The method of claim 1, wherein the sub pixels are arranged in a matrix of “n” rows and “m” columns in the sub pixel group, and

the generating the pixel signal comprises:

comparing the sub pixel signals with the reference voltage to generate comparison signals for the respective columns;

generating a count result by counting each of the comparison signals; and

adding count results generated for the respective columns to generate the pixel signal.

3. The method of claim 2, wherein the generating the pixel signal further comprises:

transmitting sub pixel signals output to each of the columns to an input node of a comparator using a capacitor; and

resetting the input node of the comparator to a power supply voltage.

4. The method of claim 3, wherein the generating the pixel signal further comprises:

sequentially increasing a voltage of the input node of the comparator by a hole voltage.

5. The method of claim 4, wherein the generating the pixel signal further comprises:

resetting an output node of the comparator to a ground voltage.

6. The method of claim 1, wherein a threshold voltage of the single transistor is changed according to the at least one photogenerated charge.

7. An image sensor comprising:

a pixel array comprising a plurality of sub pixel groups, each of the sub pixel groups including a plurality of sub pixels and corresponding to a single pixel;

a readout block configured to generate a pixel signal having a plurality of bits based on a result of comparing a plurality of sub pixel signals generated by each of the sub pixel groups with a reference voltage; and

a control unit configured to control the pixel array and the readout block,

wherein each of the sub pixels is a 1-transistor (1T) pixel that detects at least one photogenerated charge and includes only one transistor.

8. The image sensor of claim 7, wherein the sub pixels are arranged in a matrix of “n” rows and “m” columns in each of the sub pixel groups, and

the readout block comprises:

a comparator configured to compare sub pixel signals of each of the columns with the reference voltage to generate a comparison signal for each column;

a counter configured to generate a count result by counting the comparison signal; and

an adder configured to generate the pixel signal by adding count results generated for the respective columns.

9. The image sensor of claim 8, wherein the counter is an asynchronous counter that receives the comparison signal as a clock signal.

10. The image sensor of claim 9, wherein the readout block further comprises:

a capacitor configured to transmit the sub pixel signals to an input node of the comparator; and

a first reset switch configured to reset the input node of the comparator to a power supply voltage.

11. The image sensor of claim 10, wherein the readout block further comprises:

a hole injection unit configured to sequentially increase a voltage of the input node of the comparator by a hole voltage.

12. The image sensor of claim 11, wherein the hole injection unit comprises a plurality of hole injection transistors which are connected in series between the power supply voltage and the input node of the comparator.

13. The image sensor of claim 12, wherein the hole injection transistors are P-channel metal oxide semiconductor (PMOS) transistors.

14. The image sensor of claim 11, wherein the readout block further comprises a second switch configured to reset an output node of the comparator to a ground voltage.

15. The image sensor of claim 7, wherein a threshold voltage of the single transistor is changed according to the at least one photogenerated charge.

16. A method of operating an image sensor, comprising:

receiving, at a readout circuit, a plurality of sub pixel signals from a plurality of one transistor pixels;

generating, by the readout circuit, a pixel signal based on the received sub pixel signals and a reference voltage.

17. The method of claim 16, wherein the generating comprises:

comparing each of the sub pixel signals to the reference voltage; and

generating the pixel signal based on results of the comparing.

18. The method of claim 16, wherein the generating comprises:

producing count values, each count value associated with a respective once of the sub pixel signals based on a duration that a voltage corresponding to the respective sub pixel signal meets a relationship with the reference voltage; and

determining the pixel signal based on the generated count values.

19. The method of claim 18, wherein the generating comprising:

changing the voltage corresponding to the respective sub pixel signal over time.