Abstract: A camera may one or more lenses and an image sensor having an array of light-gathering pixels. The pixels may generate image signals based on light passing through the lenses. The camera may include at least one pixel output settling assist circuit. The pixel output settling assist circuit may be electrically coupled to an output signal line of at least one of the pixels. The pixel output settling assist circuit may include a pixel output voltage change detection circuit and a bias current adjustment circuit. During read-out of the image signals of the at least one pixel, the pixel output voltage change detection circuit may detect a change of a voltage at the output of the pixel. The bias current adjustment circuit may generate and adjust a current injected to the output based on the detected change of the voltage at the output.

Abstract: An electronic device includes: an imaging unit including a region having a pixel group that has a plurality of first pixels, and second pixels that are fewer than the first pixels in the pixel group; and a control unit that reads out the signals based upon exposure of the second pixels during exposure of the plurality of first pixels.

Abstract: A system includes an illumination source and an imaging apparatus that includes an electronic rolling shutter imager and is configured for sequentially resetting rows of pixels of the rolling shutter imager from a first row to a last row, sequentially reading charge accumulated at the rows of pixels from the first row to the last row, wherein the first row is read after resetting the last row, controlling the illumination source to illuminate the tissue of the subject with illumination light for an illumination period that lasts longer than a vertical blanking period, wherein the vertical blanking period is the period from the resetting of the last row to the reading of the first row, and generating an image frame from the readings of charge accumulated at the rows of pixels, wherein at least one reading of charge accumulated at a row of pixels is removed or replaced.

Abstract: A method of imaging tissue of a subject using an electronic rolling shutter imager includes sequentially resetting rows of pixels of the rolling shutter imager from a first row to a last row for a first amount of time; illuminating the tissue of the subject with illumination light over an illumination period that begins once the last row of the rolling shutter imager has been reset and lasts for at least the first amount of time; accumulating charge at the rows of pixels over at least the illumination period based on light that is received from the tissue of the subject while the tissue of the subject is illuminated with the illumination light; sequentially reading charge accumulated at the rows of pixels from the first row to the last row once the illumination period has ended; and generating an image frame from the rows of pixels.

Abstract: An image sensing device includes a pixel array configured to include a plurality of pixel groups consecutively arranged in row and column directions. Each of the pixel groups includes a plurality of unit pixels and each unit pixel includes a photoelectric conversion element structured to generate photocharges through a conversion of incident light. Each pixel group outputs a first pixel signal corresponding to photocharges generated by a single unit pixel and a second pixel signal corresponding to a sum of photocharges generated by two or more unit pixels.

Abstract: A tail current source of a comparator includes a first transistor and a second transistor configured to operate as current sources, wherein the first and second transistors are coupled between a tail node of the comparator and a voltage node, and wherein the tail comprises a node coupled to first and second inputs of the comparator. The tail current source also includes a switch configured to selectively couple the second transistor between the tail and the voltage node, and a bias voltage source coupled to gates of the first and second transistors. The switch is configured to be on during an analog-to-digital conversion (ADC) reset signal period and an ADC image signal period, and the switch is configured to be off during an auto-zero period, a period between the ADC reset signal and image signal periods, and a period after the ADC image signal period.

Abstract: Provided are a wake-up method and device for a surveillance camera, a surveillance camera and a medium. The surveillance camera includes a detection sensor and an image sensor. The wake-up method for a surveillance camera includes: in response to the detection sensor detecting presence of an intrusion target in a surveilled region, controlling the image sensor to enter a first image acquisition mode; controlling the image sensor in the first image acquisition mode to acquire at least two frames of surveillance images; determining whether the intrusion target is a surveilled target according to the at least two frames of surveillance images; and in response to determining that the intrusion target is a surveilled target, switching the image sensor from the first image acquisition mode to a second image acquisition mode, and controlling the image sensor in the second image acquisition mode to acquire a surveillance image having the surveilled target.

Abstract: A solid-state imaging apparatus includes a plurality of pixel circuits arranged in a matrix. Each pixel circuit includes: a photodiode; a first charge storage that stores a charge; a floating diffusion region that stores a charge; a second charge storage that stores a charge; a first transfer transistor that transfers a charge from the photodiode to the first charge storage; a second transfer transistor that transfers a charge from the first charge storage to the floating diffusion region; a first reset transistor that resets the floating diffusion region; and an accumulating transistor for accumulating a charge of the floating diffusion region in the second charge storage. The capacitance of the first charge storage is greater than the capacitance of the floating diffusion region, and the capacitance of the second charge storage is greater than the capacitance of the floating diffusion region.

Abstract: An imaging device according to the present disclosure includes a light-receiving pixel; a reference signal generator; a first amplification section; a second amplification section; a third amplification section; and a counter. The first amplification section is coupled to a first power supply node and a second power supply node. The first amplification section performs a comparison operation on the basis of a pixel signal and a reference signal. The first amplification section outputs a signal corresponding to a result of the comparison to a first node. The second amplification section includes a first transistor and a first load circuit. The first transistor includes a gate coupled to the first node, a drain coupled to a second node, and a source coupled to the second power supply node. The third amplification section includes a second transistor and a first switch.

Abstract: The present disclosure relates to a display device and a method for controlling a light-emitting element using a memristor. The present invention relates to a display device and a method for controlling a light-emitting element by using a memristor. An aspect of the present invention may provide a display driving device comprising: a light emission unit configured to include a light-emitting element; a drive unit including a memristor and configured to drive the light emission unit; and a switching unit including a switching thin-film transistor and configured to determine whether to apply a data voltage to the drive unit, according to a scan voltage.

Abstract: An endoscope having an insertion tube with a distal optical module and a releasable handle. In a semi-robotic embodiment, the handle comprises haptic controllers and a computer configured for steering and/or adjusting physical properties of the insertion tube in response to one or more command inputs from the haptic controllers. The computer may also convert image data received from the optical module into two-dimensional images displayable on a monitor. The endoscope may have inertial measurement units (IMUs) for providing data to the computer for creating a digital three-dimensional image representation of an anatomy model and/or for facilitating handling properties of the endoscope.

Abstract: A pixel array and an image sensor including the pixel array are provided. The pixel array included in the image sensor includes a plurality of pixels arranged in a matrix, and a plurality of column lines each commonly connected to pixels arranged on a same column from among the plurality of pixels. Each of the plurality of pixels includes four subpixels. Each of the four subpixels includes four photoelectric conversion devices; a floating diffusion region storing electric charges generated by the four photoelectric conversion devices; and four transmission gates configured to transmit the electric charges generated by the four photoelectric conversion devices to the floating diffusion region. Four floating diffusion regions included in the four subpixels are electrically connected to one another via internal wiring. Each of the plurality of pixels further includes a reset gate, a first driving gate and a first selection gate.

Abstract: An image sensor includes a pixel array including pixels, wherein each pixel includes at least one photodiode generating electrical charge and a pixel circuit providing a pixel signal based on the electrical charge. The images sensor also includes a logic circuit configured to generate an image based on the pixel signal, wherein the pixel circuit includes a parallel-connected first reset transistor and second reset transistor, and the logic circuit determines whether the second reset transistor is turned ON/OFF based on a level of incident light received by the at least one photodiode during an exposure time period.

Abstract: A method of detecting electromagnetic radiation includes illuminating a photodiode of a pixel sensor with electromagnetic radiation, using vertical gate structures of a transfer transistor to couple a cathode of the photodiode to an internal node of the pixel sensor, thereby generating an internal node voltage level, and generating an output voltage level of the pixel sensor based on the internal node voltage level.

Abstract: An image sensor includes a substrate including a first surface and a second surface facing the first surface, a first photodiode located in a first region of the substrate and generating photocharges from light incident on the first region, a second photodiode located in a second region of the substrate and generating photocharges from light incident on the second region, and an isolation structure defining the first region in which the first photodiode is located and the second region in which the second photodiode is located, and extending between the first photodiode and the second photodiode. An area of the second region is smaller than an area of the first region, a first end of the isolation structure is coplanar with the second surface, and the isolation structure extends in a vertical direction from the second surface of the substrate toward the first surface of the substrate.

Abstract: To generate multiple types of images of the same subject, an electronic apparatus includes a drive control unit that controls the drive of an image sensor, a division unit that divides an image capture region of the image sensor into at least first and second regions, and an image generation unit that generates a first image by capturing an image of the same subject in the first region and generates a second image by capturing an image of the same subject in the second region.

Abstract: An image sensor includes a pixel array that includes a first pixel group located in a first row and including a first select transistor and a first floating diffusion region, a second pixel group located in a second row and including a second select transistor and a second floating diffusion region, and a column line connected to both the first pixel group and the second pixel group. While charges generated by a photoelectric conversion element of the first pixel group are transferred to the first floating diffusion region, the first select transistor is turned off, the second select transistor is turned on, and a first voltage is applied to the column line through the second select transistor. A photoelectric conversion element of the second pixel group generates charges prior to the photoelectric conversion element of the first pixel group, so as to be transferred to the second floating diffusion region.

Abstract: A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.

Abstract: The present disclosure relates to an image sensor and a camera and an electronic apparatus including the same. An image sensor according to one embodiment of the present disclosure comprises a first light amount detection pixel to detect a first light amount of a first area, a first sensor pixel to output pixel data by converting light of the first area into an electric signal, a second light amount detection pixel to detect a second light amount of a second area, and a second sensor pixel to output pixel data by converting light of the second area into an electric signal, wherein a dynamic range of the first sensor pixel is different from a dynamic range of the second sensor pixel. Accordingly, a high dynamic range may be implemented within one frame.

Abstract: A sample and hold readout system and method for ramp analog to digital conversion is presented in which an optical array is read out using a sample and hold circuit such that each sample is used to charge a sample and hold capacitor and is read out during a hold phase using an amplifier that drives an ramp analog to digital converter. The sample and hold circuit transitions to a tracking phase wherein the optical array input drives an amplifier that drives the sample and hold capacitor then transitions to a sample phase where the sample and hold capacitor is connected to the optical array output directly.

Abstract: The present technology relates to an image sensor, an imaging device, and a ranging device capable of performing imaging so that noise is reduced. A photoelectric conversion unit configured to perform photoelectric conversion; a charge accumulation unit configured to accumulate charges obtained by the photoelectric conversion unit; a transfer unit configured to transfer the charges from the photoelectric conversion unit to the charge accumulation unit; a reset unit configured to reset the charge accumulation unit; a reset voltage control unit configured to control a voltage to be applied to the reset unit; and an additional control unit configured to control addition of capacitance to the charge accumulation unit are included. The charge accumulation unit includes a plurality of regions. The present technology can be applied to, for example, an imaging device that captures an image and a ranging device that performs ranging.

Abstract: The present technology relates to an imaging device and an electronic device that enable construction of an imaging device that outputs information required by a user with a small size. A single-chip imaging device includes: an imaging unit in which a plurality of pixels is arranged two-dimensionally and that captures an image; a signal processing unit that performs signal processing using a captured image output from the imaging unit; an output I/F that outputs a signal processing result of the signal processing and the captured image to an outside; and an output control unit that performs output control of selectively outputting the signal processing result of the signal processing and the captured image from the output I/F to the outside. The present technology can be applied to, for example, an imaging device that captures an image.

Abstract: An increase in a load current in a processing circuit is reduced. A light receiving device includes an imaging unit that photoelectrically converts light received in a plurality of pixels to acquire an analog image signal, a conversion unit that converts the analog image signal acquired by the imaging unit into digital image data, and a data processing unit that executes data processing on the digital image data and reduces a load of the data processing in a period in which the conversion unit executes conversion as compared to a period in which the conversion unit does not execute conversion.

Abstract: An object is to provide a pixel structure of a display device including a photosensor which prevents changes in an output of the photosensor and a decrease in imaging quality. The display device has a pixel layout structure in which a shielding wire is disposed between an FD and an imaging signal line (a PR line, a TX line, or an SE line) or between the FD and an image-display signal line in order to reduce or eliminate parasitic capacitance between the FD and a signal line for the purpose of suppressing changes in the potential of the FD. An imaging power supply line, image-display power supply line, a GND line, a common line, or the like whose potential is fixed, such as a common potential line, is used as a shielding wire.

Abstract: A pixel circuit includes a photodiode configured to photogenerate image charge in response to incident light. A transfer transistor is coupled between the photodiode and a floating diffusion to transfer the image charge from the photodiode to the floating diffusion. A reset transistor is coupled between a pixel voltage source and the floating diffusion. A lateral overflow integration capacitor (LOFIC) network includes a first LOFIC coupled between the floating diffusion and the first bias voltage source, and a second LOFIC coupled between the floating diffusion and the second bias voltage source. The first LOFIC is configured to be forward biased and the second LOFIC is configured to be reverse biased at an end of an integration period, and image charge discharged from the first LOFIC and image charge discharged from the second LOFIC compensate each other during a readout period.

Abstract: To improve a frame rate in a solid-state imaging element that compares a reference signal and a pixel signal. The solid-state imaging element includes a differential amplifier circuit, a transfer transistor, and a source follower circuit. The differential amplifier circuit amplifies a difference between the potentials of a pair of input nodes and outputs the difference from an output node. The transfer transistor transfers charge from a photoelectric conversion element to a floating diffusion layer. The auto-zero transistor short-circuits the floating diffusion layer and the output node in a predetermined period. The source follower circuit supplies a potential to one of the pair of input nodes according to a potential of the floating diffusion layer.

Abstract: An image sensor includes a photoelectric converter configured to convert received light into charges in response to the received light and provide the charges to a first node, a transfer transistor configured to provide a voltage of the first node to a floating diffusion node, a reset transistor configured to reset a voltage of the floating diffusion node to a driving voltage based on a reset signal, a source follower transistor configured to provide a unit pixel output based on the voltage of the floating diffusion node, a select transistor connected to the source follower transistor and gated with a selection signal to output the unit pixel output to the outside, and a ferroelectric capacitor connected to the floating diffusion node, wherein the ferroelectric capacitor is configured to adjust a conversion gain of the floating diffusion node based on a conversion gain mode of the ferroelectric capacitor, the conversion gain mode being a first conversion gain mode, a second conversion gain mode, or a third co

Abstract: A semiconductor device includes a digital-analog converter provided with a plurality of current cells, and a test circuit electrically connected to the digital-analog converter to test the digital-analog converter. The test circuit includes: a charge information holding circuit that holds, as differential charge information, a difference value between a first charge according to a first current and a second charge according to a second current by at least one or more current cells among the plurality of current cells; a reference voltage generation circuit that generates a reference voltage to be comparative object; and a comparison circuit that compares a determination voltage according to the differential charge information and the reference voltage to output a comparison result.

Abstract: The imaging element has a first and a second phase difference pixel region each including the plurality of phase difference pixels, and an imaging pixel region between the first and the second phase difference pixel region in the first direction. The processor is configured to cause the imaging element to perform imaging at a frame cycle, execute first readout processing of reading out a signal from the first phase difference pixel region during a first frame period, and execute second readout processing of reading out a signal from the second phase difference pixel region during a second frame period subsequent to the first frame period. A first exposure time, during which the first phase difference pixel region is exposed, and a second exposure time, during which the second phase difference pixel region is exposed, are different from an exposure time of the imaging pixel region.

Abstract: A solid-state imaging device includes a plurality of pixels in a two-dimensional array. Each pixel includes a photoelectric conversion element that converts incident light into electric charge, and a charge holding element that receives the electric charge from the photoelectric conversion element, and transfers the electric charge to a corresponding floating diffusion. The charge holding element further includes a plurality of electrodes.

Abstract: An image processing apparatus includes a reception unit that receives an image signal acquired by an image sensor, an acceptance unit that accepts operation input made by a user for driving a device carrying the image sensor, a calculation unit that calculates a movement amount of the image sensor in an entire angle of view according to the image signal and the operation input, and a correction processing unit that performs a correction process for an image constructed from the image signal, according to the movement amount.

Abstract: To prevent leakage of incident light from pixels around a pixel region (11) of a light receiving element. A light receiving element includes a pixel region and an adjacent pixel (400). In the pixel region, a plurality of pixels (100) is arranged, the plurality of pixels including a photodiode formed in a semiconductor substrate (110) in which a charge generated by photoelectric conversion of incident light is multiplied with a high reverse bias voltage, an on-chip lens (160) that focuses the incident light on the photodiode, and a wiring region (120) having a wiring layer (122) connected to the photodiode and an insulating layer (121) that insulates the wiring layer. The adjacent pixel is arranged adjacent to the pixel region and includes the photodiode, an on-chip lens (161) having a curvature different from a curvature of the on-chip lens, and the wiring region.

Abstract: One object of the present invention is to provide a solid-state imaging device, a method for fabricating a solid-state imaging device, and an electronic apparatus that implement both a wide dynamic range and a high sensitivity. A storage capacitor serving as a storage capacitance element includes a first electrode and a second electrode on a second substrate surface side. The first electrode is formed of a p+ region (the second conductivity type semiconductor region) formed in the surface of a second substrate surface of a substrate, and the second electrode is formed above the second substrate surface so as to be opposed at a distance to the first electrode in the direction perpendicular to the substrate surface. The first electrode and the second electrode are arranged so as to spatially overlap with a photoelectric conversion part in the direction perpendicular to the substrate surface.

Abstract: An image sensor includes a pixel configured to operate in a high conversion gain (HCG) mode and a low conversion gain (LCG) mode during a readout period, and a correlated double sampling (CDS) circuit configured to generate a comparison signal based on a ramp signal and a pixel voltage received from the pixel, wherein the CDS circuit includes a comparator configured to: receive the pixel voltage through a first input node, receive the ramp signal through a second input node based on an LCG reset signal or an LCG image signal being received as the pixel voltage, and receive the ramp signal through a third input node based on an HCG reset signal or an HCG image signal being received as the pixel voltage; and compare the ramp signal to the pixel voltage, and output the comparison signal corresponding to a comparison result.

Abstract: Provided is a solid-state imaging apparatus that includes an imaging section that acquires image data. The solid-state imaging apparatus further includes a control section that changes time of reading out the image data based on time of DNN processing on the image data and a result of the DNN processing on the image data.

Abstract: A portable electronic device includes a housing, a sensor array including a first camera module having a first field of view, a second camera module having a second field of view different from the first field of view, and a light source, and a rear cover formed from a glass material and defining a raised sensor array region positioned over the sensor array. The raised sensor array region defines a first hole extending through the rear cover and positioned proximate a first corner region of the raised sensor array region, and a second hole extending through the rear cover and positioned proximate a second corner region diagonal from the first corner region. The first camera module includes a first camera housing defining a recess at a corner of the first camera housing, and the second camera module includes a second camera housing extending into the recess.

Abstract: An imaging device that generates image data includes: a plurality of pixel sensors arranged in a first direction and a second direction that respond to incident light, wherein the first direction is different than the second direction; A plurality drive-sense circuits, wherein each of the plurality of drive-sense circuits is coupled to a corresponding one of the plurality of pixel sensors and generates a plurality of sensed signals, wherein each of the plurality of drive-sense circuits includes: a first conversion circuit configured to convert a receive signal component of a sensor signal corresponding to the corresponding one of the plurality of pixel sensors into a corresponding one of the plurality of sensed signals; and a second conversion circuit configured to generate, based on the corresponding one of the plurality of sensed signals, a drive signal component of the sensor signal corresponding to the one of the plurality of pixel sensors.

Abstract: An image sensor includes a CIS (CMOS image sensor) pixel, a DVS (dynamic vision sensor) pixel, and an image signal processor. The CIS pixel includes a photoelectric conversion device generating charges corresponding to an incident light and a readout circuit generating an output voltage corresponding to the generated charges. The DVS pixel detects a change in an intensity of the incident light based on the generated charges to output an event signal and does not include a separate photoelectric conversion device. The image signal processor allows the photoelectric conversion device to be connected to the readout circuit or the DVS pixel.

Abstract: An imaging device incudes a pixel array including pixels arranged in columns and rows, one of the columns including a first pixel in a first row and a second pixel in a second row; a first signal line, to which the first pixel is coupled, and a second signal line, to which the second pixel is coupled, extending in a column direction of the pixels; and a first shield line, to which the first pixel is coupled, extending in the column direction. The first signal line, the first shield line, and the second signal line are arranged along a row direction of the pixels in that order.

Abstract: A photoelectric conversion apparatus includes A/D conversion circuits configured to generate digital data by A/D-converting, during an A/D conversion period, analog signals read out from pixel circuits; memory circuits configured to store the digital data, output circuits each connected to at least two memory circuits among the memory circuits, and a scanning circuit configured to select one of the output circuits and select one of the at least two memory circuits connected to the selected output circuit, thereby reading out the digital data. The scanning circuit is configured not to change the selection of the output circuit during a prohibition period including at least a period until 0.65T elapses after a lapse of 0.35T since a start of the A/D conversion period where T represents a length of the A/D conversion period.

Abstract: Systems and methods for event-based gaze in accordance with embodiments of the invention are illustrated. One embodiment includes an event-based gaze tracking system, including a camera positioned to observe an eye, where the camera is configured to asynchronously sample a plurality of pixels to obtain event data indicating changes in local contrast at each pixel in the plurality of pixels, and a processor communicatively coupled to the camera, and a memory communicatively coupled to processor, where the memory contains a gaze tracking application, where the gaze tracking application directs the processor to, receive the event data from the camera, fit an eye model to the eye using the event data, map eye model parameters from the eye model to a gaze vector, and provide the gaze vector.

Abstract: Disclosed are an image sensor, an operating method thereof, and an electronic device including the image sensor. The image sensor includes a pixel array including a plurality of pixels, a first selection/read-out circuit, a second selection/read-out circuit, and a controller provided to select a pixel of the pixel array and control the first and second selection/read-out circuits to read out information of the selected pixel. The first selection/read-out circuit provides a signal for selecting a pixel of the pixel array in a first direction, reads out a plurality of pixel signals received from the pixel array in a direction corresponding to the first direction, and the second selection/read-out circuit provides a signal for selecting a pixel of the pixel array in a second direction, and reads out a plurality of pixel signals received from the pixel array in a direction corresponding to the second direction.

Abstract: A pixel array includes pixel circuits including a first pixel circuit having first and second split floating diffusions receiving charge from first and third photodiodes through first and third transfer transistors, and from second and fourth photodiodes through second and fourth transfer transistors, respectively. A first shared gate structure includes gates of first transfer transistors of first and second pixel circuits. A third shared gate structure includes gates of third transfer transistors of the first and second pixel circuits. A second shared gate structure includes gates of second transfer transistors of first and third pixel circuit. A fourth shared gate structure includes gates of fourth transfer transistors the first and third pixel circuits. A dual floating diffusion transistor is coupled between the first and second split floating diffusions and the third and fourth split floating diffusions to bin charges in the first, second, third, and fourth floating diffusions.

Abstract: A unit pixel circuit includes a first photodiode, a second photodiode different from the first photodiode, a first floating diffusion node in which charges generated in the first photodiode are accumulated, a second floating diffusion node in which charges generated in the second photodiode are accumulated, a capacitor connected to the first floating diffusion node and a first voltage node, and accumulating overflowed charges of the first photodiode, a first switch transistor connecting the first floating diffusion node to a third floating diffusion node, a reset transistor connecting the third floating diffusion node to a second voltage node, a gain control transistor connecting the second floating diffusion node to the third floating diffusion node, and a second switch transistor connected to the first voltage node and the second voltage node.

Abstract: There is provided a solid-state imaging device including a first substrate having a pixel circuit including a pixel array unit formed thereon, and a second substrate having a plurality of signal processing circuits formed thereon so as to be arranged through a scribe region. The first substrate and the second substrate are stacked.

Abstract: In some embodiments, the present disclosure relates to method for forming an image sensor integrated chip. The method includes forming a first photodetector region in a substrate and forming a second photodetector region in the substrate. A floating diffusion node is formed in the substrate between the first photodetector region and the second photodetector region. A pick-up well contact region is formed in the substrate. A first line intersects the floating diffusion node and the pick-up well contact region. One or more transistor gates are formed on the substrate. A second line that is perpendicular to the first line intersects the pick-up well contact region and the one or more transistor gates.

Abstract: A vehicular driving assist system includes a forward viewing camera, a forward sensing non-vision sensor, and an electronic control unit (ECU) disposed at a vehicle equipped with the vehicular driving assist system. Captured image data is transferred from the camera to the ECU and processed at the ECU and captured sensor data is transferred from the non-vision sensor to the ECU and processed at the ECU. An object forward of the equipped vehicle is detected via processing at the ECU of transferred image data and via processing at the ECU of transferred sensor data. The ECU determines a difference between detection of the object via processing at the ECU of transferred image data and detection of the object via processing at the ECU of transferred sensor data. The ECU disables at least part of a driving assist function based on the determined difference being greater than a threshold level.

Abstract: An image sensor includes an analog-to-digital conversion circuit that receives pixel signals from column lines, respectively, and converts the pixel signals into first pixel values, respectively. Data buffer clusters correspond to enable signals transferred from a timing controller, respectively, and output second pixel values. Each of the data buffer clusters stores first pixel values, which correspond to some column lines consecutively arranged among the column lines, among the first pixel values and output stored pixel values as some second pixel values among the second pixel values in response to a corresponding enable signal. A digital processing circuit performs digital processing on the second pixel values output from the data buffer clusters.

Abstract: A photoelectric conversion apparatus includes a first and a second multilayer wiring layer. The first or the second multilayer wiring layer is provided with a first electrode supplied with a first voltage from an outside of the photoelectric conversion apparatus. The first electrode is not connected with a second semiconductor layer.

Abstract: The present application provides an image sensor, a global shutter control method and a computer storage medium. The image sensor includes a pixel array, where the pixel array includes a plurality of columns of pixels, or the pixel array includes a plurality of groups of sub-pixel arrays, each group of sub-pixel arrays including a plurality of columns/rows of pixels; and a processor module which triggers the pixel array on the basis of an instruction. According to the control method, consistency of an average delay of the columns/rows or groups in the pixel array is achieved by dynamic averaging. In addition, the consistency cannot be affected by external conditions such as a process, a power supply or the temperature. A high instantaneous current caused by using a global shutter manner is avoided, and at the same time, there is no need for a digital processor to perform column-by-column or row-by-row correction at a back end after exposure is not required, so as to reduce hardware cost and test cost.