Abstract: Embodiments of a hybrid imaging sensor that optimizes a pixel array area on a substrate using a stacking scheme for placement of related circuitry with minimal vertical interconnects between stacked substrates and associated features are disclosed. Embodiments of maximized pixel array size/die size (area optimization) are disclosed, and an optimized imaging sensor providing improved image quality, improved functionality, and improved form factors for specific applications common to the industry of digital imaging are also disclosed.

Abstract: An image sensing device includes a pixel array including a plurality of unit pixels consecutively arranged and structured to generate an electrical signal in response to incident light by performing photoelectric conversion of the incident light. The unit pixels are isolated from each other by first device isolation structures. Each of the unit pixels includes a photoelectric conversion element structured to generate photocharges by performing photoelectric conversion of the incident light, a floating diffusion region structured to receive the photocharges, a transfer transistor structured to transfer the photocharges generated by the photoelectric conversion element to the floating diffusion region, and a well tap region structured to apply a bias voltage to a well region. The well tap region is disposed at a center portion of a corresponding unit pixel.

Abstract: An example method includes using a plurality of switches corresponding to a plurality of capacitors to select a first set of capacitors for charging at a first time. Charging the first set of capacitors corresponds to sampling from a first set of adjacent light detectors. The method includes using the plurality of switches to select a second set of capacitors from the plurality of capacitors for discharging at a second time. The method includes using a sampling switch to sample an output of the second set of capacitors as they discharge. The output of the second set of capacitors corresponds to the first set of adjacent light detectors. The method includes determining, based on sampling the output of the second set of capacitors, a collective intensity of light received by the first set of adjacent light detectors.

Abstract: A fingerprint sensing device including a plurality of pixel blocks is provided. The pixel blocks are arranged in an array. Each of the pixel blocks includes a conversion gain. At least two of the conversion gains are different, and the pixel block located in a central location of the array has a minimum conversion gain.

Abstract: A solid-state image sensor includes a pixel array section including a plurality of unit pixels each having a photoelectric conversion unit, the plurality of unit pixels being arranged in a matrix, a constant current source circuit unit having a constant current source connected to each of vertical signal lines provided in association with column arrangement of the pixel array section; and a control unit configured to control the constant current source circuit unit. The constant current source includes a plurality of transistors. The control unit switches, in a case where the plurality of transistors constituting the constant current source is regarded as one transistor having a gate width and a gate length being equivalent to each other, a ratio between the gate width and the gate length of the plurality of transistors on the basis of illumination in image-capturing environment.

Abstract: A photoelectric conversion apparatus includes a light receiving circuit configured to convert light into an electrical signal, a readout circuit configured to read out an analog signal corresponding to the electrical signal, a ?? A/D converter configured to convert the analog signal into a digital signal, and a control circuit configured to change a gain of the photoelectric conversion apparatus in accordance with a change of a driving mode of the photoelectric conversion apparatus. The analog signal read out by the readout circuit is an analog current signal. The readout circuit includes a variable resistor on a signal path for supplying the analog current signal to the ?? A/D converter. The control circuit changes the gain of the photoelectric conversion apparatus by changing a resistance value of the variable resistor.

Abstract: A solid-state image capturing element includes a pair of first floating diffusion layers arranged in a direction perpendicular to a predetermined direction and a pair of second floating diffusion layers arranged in the perpendicular direction and adjacent to the pair of first floating diffusion layers in the predetermined direction. The element includes a first connection circuit configured to select at least one of the pair of first floating diffusion layers and to connect the selected first floating diffusion layer to a predetermined first wire; a second connection circuit configured to select at least one of the pair of second floating diffusion layers and to connect the selected second floating diffusion layer to the first wire; and an output circuit configured to output a signal according to an amount of charge of at least one of the pair of first floating diffusion layers or the pair of second floating diffusion layers.

Abstract: An image sensor includes a pixel including a reset circuit and a floating diffusion node, and outputting a pixel signal that is generated based on a voltage at the floating diffusion node, the pixel signal including a reset output that is generated based on the voltage at the floating diffusion node being reset by the reset circuit. The image sensor further includes a sampler sampling the output pixel signal to generate a sampling signal having a time interval corresponding to a magnitude of the output pixel signal, and a counter counting the generated sampling signal, based on a counter clock, to generate a counting value corresponding to the time interval of the sampling signal. The sampler samples the reset output of the output pixel signal n times to generate first to n-th reset sampling signals, where n is an integer of 2 or more.

Abstract: Various aspects of the present disclosure generally relate to a sensor module. In some aspects, an image sensor module may include an array of photon sensors configured to output a first set of signals corresponding to a set of photon sensors of the array of photon sensors. The set of photon sensors may include a row of photon sensors, or a column of photon sensors, of the array of photon sensors. The image sensor module may include a plurality of data selector components configured to receive the first set of signals and output a second set of signals corresponding to a subset of the set of photon sensors.

Abstract: Some image sensors include pixels with capacitors. The capacitor may be used to store charge in the imaging pixel before readout. The capacitor may be a metal-insulator-metal (MIM) capacitor that is susceptible to dielectric relaxation. Dielectric relaxation may cause lag in the signal on the capacitor that impacts the signal on the capacitor during sampling. The image sensor may include dielectric relaxation correction circuitry that leverages the linear relationship between voltage stress and lag signal to correct for dielectric relaxation. The image sensor may include shielded pixels that operate with a similar timing scheme as the imaging pixels in the active array. Measured lag signals from the shielded pixels may be used to correct imaging data.

Abstract: Disclosed are a solid-state imaging apparatus, a signal processing method of a solid-state imaging apparatus, and an electronic device, which are capable of correcting uneven sensitivities generated by multiple factors in a broad area and realizing the higher-precision image quality. A correction circuit 710 weight a sensitivity Pi corresponding to a pixel signal of each pixel related to correction in a pixel unit PU that is the correction target and a sensitivity Pi corresponding to a pixel signal of each pixel related to correction in at least one same color pixel unit PU and adjacent to the pixel unit PU that is the correction target by a weighting coefficient Wi. Consequently, the correction coefficient ? is calculated by dividing a sum of the weighted sensitivities by a total number n of pixels related to correction.

Abstract: A method of imaging tissue of a subject using an electronic rolling shutter imager includes sequentially resetting rows of pixels of the rolling shutter imager from a first row to a last row, sequentially reading charge accumulated at the rows of pixels from the first row to the last row, wherein the first row is read after resetting the last row, illuminating the tissue of the subject with illumination light for an illumination period that lasts longer than a vertical blanking period, wherein the vertical blanking period is the period from the resetting of the last row to the reading of the first row, and generating an image frame from the readings of charge accumulated at the rows of pixels, wherein at least one reading of charge accumulated at a row of pixels is removed or replaced to generate the image frame.

Abstract: The present technology relates to an imaging element that can reduce noise. The imaging element includes: a photoelectric conversion element; a first amplification element that amplifies a signal from the photoelectric conversion element; a second amplification element that amplifies an output from the first amplification element; an offset element provided between the first amplification element and the second amplification element; a first reset element that resets the first amplification element; and a second reset element that resets the second amplification element. The offset element is a capacitor. A charge is accumulated in the offset element via a feedback loop of an output from the second amplification element, and an offset bias is generated. The present technology can be applied to an imaging element.

Abstract: A focus detection device includes: an imaging unit having a first and second pixel each of which receives light transmitted through an optical system and outputs signal used for focus detection, and a third pixel which receives light transmitted through the optical system and outputs signal used for image generation; an input unit to which information regarding the optical system is input; a selection unit that selects one of the first and second pixel based on the information to the input unit; a readout unit that reads out the signal from one of the first and second pixel based on a selection result at a timing different from reading out the signal from the third pixel to be read out; and a focus detection unit that performs the focus detection based on at least one of the signals of the first and second pixel read out by the readout unit.

Abstract: An image sensor having a shield including, for example, a metal, is above an electrical charge storage element in a pixel region to block light incident toward the electrical charge storage element, thereby making it possible to reduce or prevent reading a charge value including leakage charge introduced to the electrical charge storage element, and thus adversely affecting an image result.

Abstract: A photoelectric conversion device comprising: a plurality of effective pixels and a plurality of light shielded pixels which are arranged respectively in a plurality of rows and a plurality of columns; and a signal processing circuit, wherein in a period during which pixel signals are output from first light shielded pixels which are first-row light shielded pixels to a first vertical output line, pixel signals are output from second light shielded pixels which are second-row light shielded pixels to a second vertical output line, and the signal processing circuit corrects effective pixel signals output from the effective pixels by using a correction signal obtained by performing filtering processing on pixel signals from the first light shielded pixels and on the pixel signals from the second light shielded pixels.

Abstract: An imaging device including: a first photoelectric converter that generates a first signal by photoelectric conversion; a first transistor having a gate configured to be electrically coupled to the first photoelectric converter; a second photoelectric converter that generates a second signal by photoelectric conversion; a capacitor having a first terminal and a second terminal, the first terminal being configured to be electrically coupled to second photoelectric converter, a first potential being applied to the second terminal; and a switch element provided between the gate of the first transistor and the first terminal of the capacitor.

Abstract: An apparatus for measuring photon information and a photon measurement device are disclosed.

Abstract: It makes it easier to reduce the line capacitance of vertical signal lines in a solid-state image sensor in which signals are output via the vertical signal lines. The solid-state image sensor is provided with a logic circuit, a pixel circuit, and a negative capacitance circuit. In the solid-state image sensor, the logic circuit processes an analog signal. Also, in the solid-state image sensor, the pixel circuit generates an analog signal by photoelectric conversion, and outputs the analog signal to the logic circuit via a predetermined signal line. In the solid-state image sensor, the negative capacitance circuit is connected to the predetermined signal line.

Abstract: The present disclosure provides an anti-flashlight circuit assembly and an image sensor. The anti-flashlight circuit assembly includes a plurality of flashlight detection units. Each flashlight detection unit includes: a first photoelectric detection module configured to monitor an optical signal in real time and output a corresponding electric signal; a first triggering generation module configured to generate a first triggering generation signal when the electric signal exceeds a predetermined threshold, and output the first triggering generation signal to a first interface logic module; and the first interface logic module configured to output a triggering state signal upon the receipt of the first triggering generation signal.

Abstract: A photoelectric conversion apparatus comprises a first semiconductor region of a first conductivity type arranged between a first surface and a second surface, a second semiconductor region of the first conductivity type arranged between the first surface and the second surface and configured to accumulate a signal charge generated by incident light, a third semiconductor region of the first conductivity type arranged between the first surface and the second surface, a fourth semiconductor region of the first conductivity type arranged between the first surface and the second surface and in contact with the third semiconductor region, a first transfer electrode arranged on the first surface, a semiconductor region of the second conductivity type arranged between the third semiconductor region and the second surface, and a semiconductor region of the second conductivity type arranged between the fourth semiconductor region and the second surface.

Abstract: To further capture an image in a solid-state image sensor that detects an address event. The solid-state image sensor includes a photoelectric conversion element, a charge accumulation unit, a transfer transistor, a detection unit, and a connection transistor. The photoelectric conversion element generates a charge by photoelectric conversion. The charge accumulation unit accumulates the charge and generates a voltage according to an amount of the charge. The transfer transistor transfers the charge from the photoelectric conversion element to the charge accumulation unit. The detection unit detects whether or not a change amount of a photocurrent according to the amount of the charge exceeds a predetermined threshold. The connection transistor connects the charge accumulation unit and the detection unit to cause the photocurrent to flow.

Abstract: An image sensor includes a pixel array, a row driver, a detector, an analog-to-digital converter and a controller. The pixel array includes a pixel area including a pixel and a dummy area including a monitoring circuit. The dummy area is disposed on a same substrate as the pixel area. The dummy area is disposed adjacent to the pixel area. The row driver is configured to output a driving signal to the pixel and the monitoring circuit. The detector is configured to receive a monitoring signal from the monitoring circuit. The analog-to-digital converter is configured to receive an analog signal corresponding to an incident light from the pixel and to convert the analog signal to a digital signal. The controller is configured to control the row driver and the analog-to-digital converter.

Abstract: An image sensor includes a pixel array with pixels arranged in a first direction and a second direction, intersecting the first direction. Each of the pixels includes a photodiode, a pixel circuit below the photodiode, and a color filter on or above the photodiode. A logic circuit acquires a pixel signal from the pixels through a plurality of column lines extending in the second direction. The pixels include color pixels and white pixels, the number of white pixels being greater than the number of color pixels. The pixel circuit includes a floating diffusion in which charges of the photodiode are accumulated and transistors outputting a voltage corresponding to amounts of charges in the floating diffusion. Each of the color pixels shares the floating diffusion with at least one neighboring white pixel, adjacent thereto in the second direction, among the white pixels.

Abstract: A method of removing fixed pattern noise, comprising: S01: performing a single-frame segmented exposure on a pixel array; S02: reading a of the pixel array, comprising: S021: performing a soft reset, so as to set the reset signal of the pixel unit to an intermediate voltage, and reading a differential reset signal; S022: performing a hard reset so as to set the reset signal of the pixel unit to a high voltage; S023: turning on a transmission MOS transistor to enable an exposure signal of to photodiode to transmitted to the floating diffusion area, and reading a differential pixel transmission signal; S03: subtracting the differential reset signal from the differential pixel transmission signal to obtain an exposure signal with fixed pattern noise removed. Another method is removing fixed pattern noise and an image sensor are further provided.

Abstract: Provided is an imaging apparatus including an imaging unit having a plurality of pixels, the pixels each having: a conversion element converting incident light into photoelectrons; a floating diffusion layer electrically connected to the conversion element and converting the photoelectrons into a voltage signal; a differential amplifier circuit electrically connected to the floating diffusion layer, including an amplifier transistor to which a potential of the floating diffusion layer is input, and amplifying the potential of the floating diffusion layer; a feedback transistor electrically connected to the amplifier transistor and initializing the differential amplifier circuit; a clamp capacitance connected in series between the floating diffusion layer and the amplifier transistor; and a reset transistor connected in parallel between the floating diffusion layer and the clamp capacitance and initializing the potential of the floating diffusion layer.

Abstract: To provide a semiconductor device that makes it possible to reduce a cell circuit area and an increase in resolution. There is provided a semiconductor device including: a first region in which readout cells are arranged in an array form, the readout cells having one of input transistors included in a differential amplifier: and a second region in which reference cells are arranged in an array form, the reference cells having another input transistor included in the differential amplifier, the first region and the second region being separated from each other.

Abstract: An image sensing device includes a pixel array including a plurality of unit pixel blocks each including a plurality of unit image sensing pixels arranged in the pixel array and structured to convert light into photocharges. Each of the unit pixel blocks includes a first sub-pixel block including a first floating diffusion region structured to hold the photocharges and a plurality of unit image sensing pixels sharing the first floating diffusion region, and a conversion gain capacitor arranged adjacent to one side of the first sub-pixel block. The conversion gain capacitor includes an impurity region coupled to an input node that receives a conversion gain signal, and a gate structured to surround the impurity region and coupled to the first floating diffusion region to change a gain of the first floating diffusion region in response to a change in the conversion gain signal.

Abstract: A display panel and a display device are provided. The display panel has a display area and a non-display area. The display panel includes pixels arranged in H columns and H*x data lines arranged in the display area and DEMUX circuits arranged in the non-display area. Each pixel includes x sub-pixels, and the data line is electrically connected to the sub-pixel. Each DEMUX circuit includes signal output terminals electrically connected to the data lines. The DEMUX circuits include M first DEMUX circuits and N second DEMUX circuits. Each first DEMUX circuit includes a first signal input terminal and al first signal output terminals. Each second DEMUX circuit includes a second signal input terminal and b1 second signal output terminals. H*x=M*a1+N*b1, where H, x, M, N, a1, and b1 are positive integers, M>N, a1>2, b1?2, a1>b1, and (M+N) is an even number.

Abstract: The binning method of an image sensor includes reading out a plurality of pixel signals from at least two rows of each of a plurality of areas of a pixel array at a time, each of the plurality of areas including a plurality of pixels arranged in a 2n×2n matrix, where n is an integer equal to or greater than 2; generating first image data by performing analog-to-digital conversion on the plurality of pixel signals; generating, based on the first image data, a first summation value of each of a plurality of binning areas based on two pixel values corresponding to a same color in each of the plurality of binning areas, the plurality of binning areas corresponding to the plurality of areas of the pixel array; and generating a second summation value of each of two binning areas based on two first summation values corresponding to a same color in the two binning areas, the two binning areas being adjacent to each other in a column direction among the plurality of binning areas.

Abstract: An optical camera system includes a first lens driving mechanism, a second lens driving mechanism, and a casing. The first lens driving mechanism includes a first outer frame and a first driving assembly. The first driving assembly is configured to drive a first optical component to move relative to the first outer frame. The second lens driving mechanism includes a second outer frame and a second driving assembly. The second driving assembly is configured to drive a second optical component to move relative to the second outer frame. The casing has at least three side walls perpendicular to each other, at least two side walls of the first outer frame face two side walls of the casing, and at least two side walls of the second outer frame face two side walls of the casing.

Abstract: A distributed, parallel, image capture and processing architecture provides significant advantages over prior art systems. A very large array of computational circuits—in some embodiments, matching the size of the pixel array—is distributed around, within, or beneath the pixel array of an image sensor. Each computational circuit is dedicated to, and in some embodiments is physically proximal to, one, two, or more associated pixels. Each computational circuit is operative to perform computations on one, two, or more pixel values generated by its associated pixels. The computational circuits all perform the same operation(s), in parallel. In this manner, a very large number of pixel-level operations are performed in parallel, physically and electrically near the pixels.

Abstract: A data receiving device of a memory device comprises a first pre-amplifier configured to receive previous data, a first reference voltage, and input data, and to output differential signals by comparing the input data with the first reference voltage in response to a clock, when the first pre-amplifier is selected in response to the previous data, a second pre-amplifier configured to receive inverted previous data, a second reference voltage, different from the first reference voltage, and the input data, and outputting a common signal in response to the clock, when the second pre-amplifier is unselected in response to the previous data; and an amplifier configured to receive the differential signals and the common signal, and to latch the input data by amplifying the differential signals.

Abstract: A solid-state imaging element according to an embodiment of the present disclosure includes a first electrode including a plurality of electrodes, a second electrode opposed to the first electrode, and a photoelectric conversion layer provided between the first electrode and the second electrode, and the first electrode has, at least in a portion, an overlap section where the plurality of electrodes overlap each other with a first insulation layer interposed therebetween.

Abstract: The present technology relates to a solid-state imaging device that can improve imaging quality by reducing variation in the voltage of a charge retention unit, a method of driving the solid-state imaging device, and an electronic apparatus. A first photoelectric conversion unit generates and accumulates signal charge by receiving light that has entered a pixel, and photoelectrically converting the light. A first charge retention unit retains the generated signal charge. A first output transistor outputs the signal charge in the first charge retention unit as a pixel signal, when the pixel is selected by the first select transistor. A first voltage control transistor controls the voltage of the output end of the first output transistor. The present technology can be applied to pixels in solid-state imaging devices, for example.

Abstract: In a solid-state imaging element that performs AD conversion for each pixel, image quality degradation when resolution is lowered is suppressed without wastefully consuming power. The solid-state imaging element includes a plurality of pixels. Each of the plurality of pixels is provided with a comparison unit, an addition circuit, and a data storage unit. The comparison unit generates a difference signal obtained by amplifying a difference between an analog pixel signal to which a predetermined coordinate is assigned and a predetermined reference signal. The addition circuit generates an addition signal by performing analog addition of the difference signal and a difference signal regarding another coordinate adjacent to the predetermined coordinate. The data storage unit holds a digital signal indicating a time when an output signal of the comparison unit corresponding to the addition signal is inverted.

Abstract: An imaging device having a semiconductor substrate that includes a first photoelectric converter, and a second photoelectric converter adjacent to the first photoelectric converter. The imaging device further includes a capacitive element one end of which is coupled to the first photoelectric converter, where the first capacitive element at least partly overlaps, in a plan view, with the second photoelectric converter.

Abstract: To improve the image quality of image data in a solid-state imaging device that reads a signal according to a potential difference between respective floating diffusion regions of a pair of pixels. A pixel unit is provided with a plurality of rows each including a plurality of pixels. A readout row selection unit selects any of the plurality of rows as a readout row every time a predetermined period elapses, and causes each of the plurality of pixels in the readout row to generate a signal potential according to a received light amount. A reference row selection unit selects a row different from a previous row from among the plurality of rows as a current reference row every time the predetermined period elapses, and causes each of the plurality of pixels in the reference row to generate a predetermined reference potential. A readout circuit unit reads a voltage signal according to a difference between the signal potential and the reference potential.

Abstract: A pixel circuit includes a photodiode in semiconductor material to accumulate image charge in response to incident light. A tri-gate charge transfer block coupled includes a single shared channel region the semiconductor material. A transfer gate, shutter gate, and switch gate are disposed proximate to the single shared channel region. The transfer gate transfers image charge accumulated in the photodiode to the single shared channel region in response to a transfer signal. The shutter gate transfers the image charge in the single shared channel region to a floating diffusion in the semiconductor material in response to a shutter signal. The switch gate is configured to couple the single shared channel region to a charge storage structure in the semiconductor material in response to a switch signal.

Abstract: A semiconductor device according to an embodiment includes a plurality of element arrays, a signal-processing circuit, and a comparison-voltage generation circuit. Each element array is selectively connected to a vertical signal line and includes an amplification transistor configured to output a first analog signal on the basis of an input analog voltage and an actual value of variation of a characteristic value of each element array included in the plurality of element arrays. The comparison-voltage generation circuit is configured to output a gradually increasing or gradually decreasing comparison voltage. The signal-processing circuit includes a storage circuit and is configured to compare the first analog signal with the comparison voltage and store a timing at which the comparison voltage and a value of a second analog signal generated by adding a predetermined absolute value to the first analog signal match each other onto the storage circuit.

Abstract: In some embodiments, a pixel sensor is provided. The pixel sensor includes a first photodetector arranged in a semiconductor substrate. A second photodetector is arranged in the semiconductor substrate, where a first substantially straight line axis intersects a center point of the first photodetector and a center point of the second photodetector. A floating diffusion node is arranged in the semiconductor substrate at a point that is a substantially equal distance from the first photodetector and the second photodetector. A pick-up well contact region is arranged in the semiconductor substrate, where a second substantially straight line axis that is substantially perpendicular to the first substantially straight line axis intersects a center point of the floating diffusion node and a center point of the pick-up well contact region.

Abstract: An image sensor, comprising a pixel region in which a plurality of pixel units are arranged, each pixel unit having first and second photoelectric conversion portions, a first output portion that outputs, outside of the image sensor, a first signal based on a signal from the first photoelectric conversion portion of the pixel units, and a second output portion that outputs a second signal based on a signal from the first photoelectric conversion portion and a signal from the second photoelectric conversion portion of the pixel units, wherein output of the first signal from the first output portion and output of the second signal from the second output portion are performed in parallel.

Abstract: A photoelectric converter comprising a pixel unit and a processor configured to process a pixel signal output from the pixel unit is provided. The processor comprises a ?? AD converter configured to convert the pixel signal into a digital signal. The ?? AD converter comprises a subtracter to which the pixel signal and a subtraction signal are input, an integrator configured to receive an output from the subtracter, a comparator configured to compare an output from the integrator with a predetermined voltage, a decimation filter configured to generate the digital signal based on an output from the comparator, a delay unit configured to delay an output from the comparator, a buffer configured to buffer an output from the delay unit, and a DA converter configured to convert an output from the buffer into an analog signal to generate the subtraction signal.

Abstract: Improvement of noise characteristics is achievable. A solid-state imaging device according to an embodiment includes a plurality of photoelectric conversion elements (333) arranged in a two-dimensional grid shape in a matrix direction and each generating a charge corresponding to a received light amount, and a detection unit (400) that detects a photocurrent produced by the charge generated in each of the plurality of photoelectric conversion elements. A chip (201a) on which the photoelectric conversion elements are disposed and a chip (201b) on which at least a part of the detection unit is disposed are different from each other.

Abstract: An imaging device incudes a pixel array including pixels arranged in columns and rows, one of the columns including a first pixel in a first row and a second pixel in a second row; a first signal line, to which the first pixel is coupled, and a second signal line, to which the second pixel is coupled, extending in a column direction of the pixels; and a first shield line, to which the first pixel is coupled, extending in the column direction. The first signal line, the first shield line, and the second signal line are arranged along a row direction of the pixels in that order.

Abstract: An image sensor may include a shared pixel circuit having multiple photodiodes coupled to a common floating diffusion node via respective charge transfer gates. First, the pixel circuit may be reset, and a sample-and-hold reset (SHR) value may be read out. Charge from a first of the photodiodes may be transferred to the floating diffusion node, and a first sample-and-hold signal (SHS) value may be read out. A first correlated double sampling (CDS) value is obtained by computing the difference between the SHR value and the first SHS value. Without resetting again, charge from a second of the photodiodes may be transferred to the floating diffusion node, and a second SHS value may be read out. A second CDS value is obtained by computing the difference between the first and second SHS values. Reading out the shared pixel circuit in this way substantially reduces power consumption.

Abstract: Sensing pixels each store a sensing voltage level. A method for driving the plurality of sensing pixels includes providing a plurality of readout scan signals to the plurality of sensing pixels, and providing a plurality of reset scan signals to the plurality of sensing pixels. One of the plurality of readout scan signals enables one of the plurality of sensing pixels to output the sensing voltage level stored in the one of the plurality of sensing pixels. One of plurality of reset scan signals resets the sensing voltage level stored in one of the plurality of sensing pixels. One of the plurality of reset scan signals is generated by converting one of the plurality of readout scan signals with a level shift circuit or one of the plurality of readout scan signals is generated by converting one of the plurality of reset scan signals with a level shift circuit.

Abstract: An imaging device includes a pixel array, a first converter, a second converter, a first ramp signal generation circuit that is disposed closer to the first converter than to the second converter and supplies a first ramp signal to the first converter and the second converter, a first connection line having one end connected to an output terminal of the first ramp signal generation circuit and including a portion extending away from an input terminal of the first converter in a path from the one end to the other end of the first connection line, and a second connection line having one end connected to the other end of the first connection line and the other end connected to the input terminal and including a portion extending closer to the input terminal in a path from the one end to the other end of the second connection line.

Abstract: A blur correction device includes: an acquisition unit that acquires an amount of blur correction used to correct blurring of an image obtained through imaging of an imaging element during exposure for one frame in the imaging element; and a correction unit that corrects the blurring by performing image processing on a correction target image, which is an image for one frame included in a moving image obtained through imaging of the imaging element, based on the amount of blur correction acquired by the acquisition unit during exposure necessary to obtain the correction target image.

Abstract: A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.