Integrated Device Including Silicon and III-Nitride Semiconductor Devices
A semiconductor device that includes one semiconductor device formed in one semiconductor material and a second semiconductor device formed in another semiconductor material on a common substrate, and a method of fabricating the semiconductor device.
This application is based on and claims benefit of U.S. Provisional Application No. 60/690,389, filed on Jun. 14, 2005, entitled METHODS OF COMBINING SILICON AND III-NITRIDE MATERIAL ON A SINGLE WAFER, to which a claim of priority is hereby made and the disclosure of which is incorporated herein by reference.
BACKGROUND OF THE INVENTIONThe present invention relates to semiconductor devices and methods for fabricating semiconductor devices.
Some semiconductor materials such as silicon are desirable as base material for forming IC devices for, for example, driving other devices such as power MOSFETs.
Other materials are desirable for forming switching devices. For example, III-N semiconductor materials may are desirable for serving as a base material for power switching devices. One example of such a material is GaN.
It is desirable to have a single die which includes one semiconductor body with optimum use for an IC application and another for power switching application so that the driver IC and the power switch may be formed in a common die.
SUMMARY OF THE INVENTIONA semiconductor device according to the present invention includes:
a common substrate;
a first semiconductor device formed over a first surface of the substrate; and
a second semiconductor device formed over the first surface and disposed lateral to the first semiconductor device;
wherein the first semiconductor device is comprised of a first semiconductor material, and the second semiconductor device is comprised of a second semiconductor material that is different from the first semiconductor material.
According to one aspect of the present invention the second material may have a higher band gap than the first material. Thus, for example, the first material may be silicon and the second material may be a III-N semiconductor material. An example of a III-nitride material is GaN. While Si, SiC, sapphire, or even GaN can be used as a substrate, silicon is most preferred for economic reasons.
According to another aspect of the present invention the first semiconductor device may include a control IC and the second semiconductor device may be a power switching device that is controlled by the control IC.
A device according to the present invention may further include an insulation wall disposed between the first semiconductor device and the second semiconductor device. In addition, the device may further include an interlayer disposed between the second semiconductor device and the common substrate.
In one preferred embodiment, the common substrate may be comprised of silicon, the first material may be comprised of silicon, the second material may be comprised of a III-N semiconductor, the interlayer may be comprised of a compositionally graded III-N material (e.g. AlN), and the insulation wall may be comprised of silicon dioxide. Preferably, the first semiconductor device may be formed in <100> silicon that is epitaxially formed over a <100> silicon wafer. Moreover, preferably, the second semiconductor device is comprised of a III-N semiconductor material that is formed on a <111> silicon body residing on a silicon dioxide body lying on the substrate.
A method according to the present invention may include:
providing a semiconductor body of one semiconductor material;
removing a portion of the semiconductor body to create a receiving region; and
forming another semiconductor body of another semiconductor material in the receiving region.
According to one aspect of the present invention the one semiconductor material may be comprised of silicon and the another semiconductor material may be comprised of a semiconductor material of a higher band gap than that of silicon. For example, the one semiconductor material may be comprised of silicon and the another semiconductor material may be comprised of a III-N semiconductor material, such as a semiconductor alloy from the InAlGaN system (e.g. GaN).
Other features and advantages of the present invention will become apparent from the following description of the invention which refers to the accompanying drawings.
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GaN is preferred in that it can be used to form a power device such as a high electron mobility transistor (HEMT). Thus, a die according to the present invention an be used as a basic platform for forming a semiconductor device having a control IC formed in first semiconductor body 14, which is made preferably from silicon, and a power device, such as a HEMT, in second semiconductor body 16.
It should be noted that in the preferred embodiment substrate 18 is formed from silicon for economic reasons. However, other substrate materials such as SiC or Sapphire may be used without deviating from the scope and spirit of the present invention.
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Although the present invention has been described in relation to particular embodiments thereof, many other variations and modifications and other uses will become apparent to those skilled in the art. It is preferred, therefore, that the present invention be limited not by the specific disclosure herein, but only by the appended claims.
Claims
1-22. (canceled)
23. An integrated device comprising:
- a common substrate;
- a first semiconductor device formed over a first surface of said substrate;
- a second semiconductor device formed over said first surface and disposed lateral to said first semiconductor device;
- said first semiconductor device comprising a first semiconductor material, and said second semiconductor device comprising a second semiconductor material having a higher band gap than said first semiconductor material.
24. The integrated device of claim 23, wherein said first semiconductor material comprises silicon and said second semiconductor material comprises a III-Nitride material.
25. The integrated device of claim 23, wherein said first semiconductor device comprises a control IC.
26. The integrated device of claim 23, wherein said second semiconductor device comprises a power switching device.
27. The integrated device of claim 23 further comprising an insulation wall disposed between said first semiconductor device and said second semiconductor device.
28. The integrated device of claim 23 further comprising an interlayer disposed between said second semiconductor device and said common substrate.
29. The integrated device of claim 27, wherein said insulation wall comprises of silicon dioxide.
30. The integrated device of claim 28, wherein said interlayer comprises a compositionally graded III-Nitride material.
31. The integrated device of claim 23, wherein said first semiconductor device comprises <100> silicon.
32. The integrated device of claim 23, wherein said first semiconductor device comprises <100> silicon and said common substrate comprises <100> silicon.
33. The integrated device of claim 23, wherein said second semiconductor material comprises a III-N material that is formed on <111> silicon residing on a silicon dioxide interlayer lying on said common substrate.
34. The integrated device of claim 23, wherein said second semiconductor device comprises an alloy of InAlGaN.
35. The integrated device of claim 23, wherein said second semiconductor device comprises GaN.
36. The integrated device of claim 23, wherein said second semiconductor device comprises AlGaN.
Type: Application
Filed: Oct 15, 2014
Publication Date: Apr 9, 2015
Inventor: Mike Briere (Scottsdale, AZ)
Application Number: 14/515,233
International Classification: H01L 27/06 (20060101); H01L 29/16 (20060101); H01L 29/20 (20060101); H01L 29/06 (20060101); H01L 29/04 (20060101);