LAYOUTS FOR INTERLEVEL CRACK PREVENTION IN FLUXGATE TECHNOLOGY MANUFACTURING
An integrated fluxgate device contains a fluxgate magnetometer sensor with a fluxgate core of a thin film magnetic material. Metal windings are disposed above and below the fluxgate core. The fluxgate core has at least one end with a width of at least 5 microns. The fluxgate magnetometer sensor has a crack-resistant structure at the end of the fluxgate core. The crack-resistant structure includes at least one of a laterally rounded contour of the fluxgate core at the end having corner radii of at least 2 microns, a lower metal end structure in the lower dielectric layer extending under the end of the fluxgate core, or an upper metal end structure in the upper dielectric layer extending over the end of the fluxgate core.
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This disclosure relates to the field of microelectronic devices. More particularly, this disclosure relates to fluxgate magnetometer sensors in microelectronic devices.
BACKGROUNDFluxgate magnetometer sensors in microelectronic devices have thin film magnetic material in the fluxgate cores embedded in dielectric material. The fluxgate cores are typically more than a micron thick to provide a desired sensitivity for the sensor. There is commonly stress in the thin film magnetic material from the deposition process, and there is further stress from thermal cycling of the integrated fluxgate device due to thermal expansion mismatch between the fluxgate core and the surrounding dielectric material, which frequently causes mechanical failure of the sensor, such as cracking of the dielectric material surrounding the fluxgate core.
SUMMARYThe following presents a simplified summary in order to provide a basic understanding of one or more aspects of the disclosure. This summary is not an extensive overview of the disclosure, and is neither intended to identify key or critical elements of the disclosure, nor to delineate the scope thereof. Rather, the primary purpose of the summary is to present some concepts of the disclosure in a simplified form as a prelude to a more detailed description that is presented later.
An integrated fluxgate device containing a fluxgate magnetometer sensor has a fluxgate core of a thin film magnetic material. The fluxgate magnetometer sensor has a crack-resistant structure at an end of the fluxgate core. The crack-resistant structure includes at least one of a laterally rounded contour of the fluxgate core at the end having corner radii of at least 2 microns, a lower metal end structure in the lower dielectric layer extending under the end of the fluxgate core, or an upper metal end structure in the upper dielectric layer extending over the end of the fluxgate core.
The present disclosure is described with reference to the attached figures. The figures are not drawn to scale and they are provided merely to illustrate the disclosure. Several aspects of the disclosure are described below with reference to example applications for illustration. It should be understood that numerous specific details, relationships, and methods are set forth to provide an understanding of the disclosure. One skilled in the relevant art, however, will readily recognize that the disclosure can be practiced without one or more of the specific details or with other methods. In other instances, well-known structures or operations are not shown in detail to avoid obscuring the disclosure. The present disclosure is not limited by the illustrated ordering of acts or events, as some acts may occur in different orders and/or concurrently with other acts or events. Furthermore, not all illustrated acts or events are required to implement a methodology in accordance with the present disclosure.
An integrated fluxgate device containing a fluxgate magnetometer sensor has a fluxgate core of a thin film magnetic material. The fluxgate magnetometer sensor has a crack-resistant structure at an end of the fluxgate core. The crack-resistant structure includes at least one of a laterally rounded contour of the fluxgate core at the end having corner radii of at least 2 microns, a lower metal end structure extending under the end of the fluxgate core, or an upper metal end structure in the upper dielectric layer extending over the end of the fluxgate core. Tests performed in pursuit of the instant disclosure have shown corner radii of at least 2 microns to be effective in reducing instances of cracks in dielectric material surrounding the fluxgate core. The lower metal end structure and the upper metal end structure may include winding segments of windings around the fluxgate core. The lower metal end structure and the upper metal end structure may be electrically coupled to the windings. Alternatively, the lower metal end structure and the upper metal end structure may be electrically isolated from the windings.
For the purposes of this disclosure, the terms “lateral” and “laterally” are understood to refer to a direction parallel to a plane of a top surface of the integrated fluxgate device, and the terms “vertical” and “vertically” are understood to refer to a direction perpendicular to the plane of the top surface of the integrated fluxgate device.
The fluxgate sensor 106 includes a fluxgate core 108 of thin film magnetic material. The fluxgate core 108 may be, for example, 1 micron to 3 microns thick. A width 110 of the fluxgate core 108 may be, for example, 10 microns to 500 microns. Increasing the thickness and the width 110 of the fluxgate core 108 may desirably improve the sensitivity of the fluxgate sensor 106, but may undesirably increase a size and cost of the integrated fluxgate device 100. The thickness and the width 110 may be selected to provide a desired balance between sensitivity and cost.
The fluxgate sensor 106 includes lower winding segments 112 of windings 114 around the fluxgate core 108. The lower winding segments 112 include metal, and may be part of an interconnect level of the integrated fluxgate device 100. The lower winding segments 112 are disposed under the fluxgate core 108. The fluxgate sensor 106 further includes upper winding segments 116 of the windings 114. The upper winding segments 116 also include metal, and may be part of another interconnect level of the integrated fluxgate device 100. The upper winding segments 116 are disposed over the fluxgate core 108. The upper winding segments 116 may be electrically coupled to the lower winding segments 112 through vias 118 of the windings 114. The vias 118 include metal and may be part of a via level of the integrated fluxgate device 100. The windings 114, including the lower winding segments 112, the upper winding segments 116 and the vias 118, are electrically isolated from the fluxgate core 108 by layers of dielectric material, not shown in
The fluxgate sensor 106 has a crack-resistant structure 120 at an end 122 of the fluxgate core 108. In the instant example, the crack-resistant structure 120 includes a laterally rounded contour 124 of the fluxgate core 108 having corner radii 126 of at least 2 microns. In the instant example, the corner radii 126 are approximately equal to half the width 110 of the fluxgate core 108 at the end 122, so that the fluxgate core 108 has a semicircular shape at the end 122. In the instant example, the crack-resistant structure 120 includes a lower metal end structure 128 which extends under the end 122 of the fluxgate core 108. In the instant example, the lower metal end structure 128 includes at least one of the lower winding segments 112 which extend under the end 122 of the fluxgate core 108. In the instant example, the crack-resistant structure 120 includes an upper metal end structure 130 which extends over the end 122 of the fluxgate core 108. In the instant example, the upper metal end structure 130 includes at least one of the upper winding segments 116 which extend over the end 122 of the fluxgate core 108. Forming the lower metal end structure 128 and the upper metal end structure 130 of the crack-resistant structure 120 of the lower winding segments 112 and the upper winding segments 116, respectively, may advantageously improve a sensitivity of the fluxgate sensor 106. Forming the fluxgate core 108 with corner radii 126 approximately equal to half the width 110 of the fluxgate core 108 may advantageously provide increased crack resistance compared to smaller corner radii.
Each end 122 of the fluxgate core 108 may have a version of the crack resistant structure 120. The crack-resistant structure 120 at a first end 122 may be different from the crack-resistant structure 120 at a second end 122. The fluxgate sensor 106 may contain more than one fluxgate core 108. For example, the fluxgate sensor 106 may be a differential sensor with two fluxgate cores 108. Each end 122 of each fluxgate core 108 may have a version of the crack resistant structure 120. Further, the integrated fluxgate device 100 may include more than one fluxgate sensor 106, for example to measure magnetic field components along perpendicular axes. The crack-resistant structure 120 may be formed at each end 122 of each fluxgate core 108 in the integrated fluxgate device 100.
Trenches for the lower winding segments 112 are formed through the first IMD layer 132 using reactive ion etch (RIE) processes, for a damascene process of forming the lower winding segments 112. The trenches may expose tops of vias at the top surface 104 of the substrate 102. A metal liner of tantalum and/or tantalum nitride is formed over the first IMD layer 132, extending into the trenches to provide a barrier for the lower winding segments 112. A seed layer of copper is formed on the metal liner by a sputter process, and additional copper is formed on the seed layer by electroplating, filling the trenches with copper. Excess copper and the metal liner are removed from over a top surface of the first IMD layer 132 by a copper chemical mechanical polish (CMP) process, leaving the copper and metal liner in the trenches to form the lower winding segments 112. The lower winding segments 112 extend past the area for the fluxgate core 108 of
Referring to
A layer of magnetic material 136 for the fluxgate core 108 of
An etch mask 138 is formed over the layer of magnetic material 136 to cover the area for the fluxgate core 108. The etch mask 138 may include photoresist formed by a photolithographic process, and may optionally include a layer of anti-reflection material such as a bottom anti-reflection coat (BARC). The etch mask 138 has rounded corners with radii greater than 2 microns.
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Additional steps may be performed to complete fabrication of the integrated fluxgate device 100. For example, a protective overcoat may be formed over the fluxgate sensor 106. Bond pads may be formed in the protective overcoat to provide electrical connections to components in the integrated fluxgate device 100.
The fluxgate sensor 306 includes a fluxgate core 308 of thin film magnetic material. The fluxgate core 308 may have a thickness of 1 micron to 3 microns thick, and a width 310 of 10 microns to 500 microns. The thickness and the width 310 may be selected to provide a desired balance between sensitivity and cost, as described in reference to
The fluxgate sensor 306 has a crack-resistant structure 320 at an end 322 of the fluxgate core 308. In the instant example, the crack-resistant structure 320 includes a laterally rounded contour 324 of the fluxgate core 308 having corner radii 326 of at least 2 microns. In the instant example, the corner radii 326 are less than half the width 310 of the fluxgate core 308 at the end 322, which may advantageously reduce an area of the fluxgate core 308, hence reducing an area of the integrated fluxgate device 300 and so possibly further reducing a fabrication cost of the integrated fluxgate device 300.
In the instant example, the crack-resistant structure 320 includes a lower metal end structure 328 which extends under the end 322 of the fluxgate core 308. In the instant example, the lower metal end structure 328 is separate from the lower winding segments 312. The lower metal end structure 328 may be a single metal element, possibly with slots, as depicted in
In the instant example, the crack-resistant structure 320 includes an upper metal end structure 330 which extends over the end 322 of the fluxgate core 308. In the instant example, the upper metal end structure 330 is separate from the upper winding segments 316. The upper metal end structure 330 may be a single metal element, possibly with slots, as depicted in
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The structure of
While various embodiments of the present disclosure have been described above, it should be understood that they have been presented by way of example only and not limitation. Numerous changes to the disclosed embodiments can be made in accordance with the disclosure herein without departing from the spirit or scope of the invention. Thus, the breadth and scope of the present disclosure should not be limited by any of the above described embodiments. Rather, the scope of the disclosure should be defined in accordance with the following claims and their equivalents.
Claims
1. An integrated fluxgate device, comprising:
- a substrate having a top surface comprising a dielectric material;
- a fluxgate core disposed above the top surface of the substrate, the fluxgate core having a crack-resistant structure at an end of the fluxgate core;
- wherein the crack-resistant structure comprises at least one of: a laterally rounded contour positioned at the end having corner radii of at least 2 microns; a lower metal end structure extending under the end of the fluxgate core; or an upper metal end structure extending over the end of the fluxgate core.
2. The integrated fluxgate device of claim 1, wherein the crack-resistant structure comprises the laterally rounded contour of the fluxgate core at the end, wherein the corner radii are approximately equal to half of a width of the fluxgate core at the end.
3. The integrated fluxgate device of claim 1, wherein the crack-resistant structure comprises the lower metal end structure and the upper metal end structure, wherein the lower metal end structure comprises at least one of lower winding segments disposed under the fluxgate core, and the upper metal end structure comprises at least one of upper winding segments disposed over the fluxgate core.
4. The integrated fluxgate device of claim 1, wherein the crack-resistant structure comprises the lower metal end structure, wherein the lower metal end structure comprises a lower metal element which is separate from lower winding segments disposed under the fluxgate core.
5. The integrated fluxgate device of claim 4, wherein the lower metal element and the lower winding segments are contained in a metal layer of the integrated fluxgate device.
6. The integrated fluxgate device of claim 4, wherein the lower metal element occupies at least 50 percent of an area directly under the end of the fluxgate core.
7. The integrated fluxgate device of claim 1, wherein the crack-resistant structure comprises the upper metal end structure, wherein the upper metal end structure comprises an upper metal element which is separate from upper winding segments disposed over the fluxgate core,
8. The integrated fluxgate device of claim 7, wherein the upper metal element and the upper winding segments are contained in a metal layer of the integrated fluxgate device.
9. The integrated fluxgate device of claim 7, wherein the upper metal element occupies at least 50 percent of an area directly over the end of the fluxgate core.
10. The integrated fluxgate device of claim 1, wherein the crack-resistant structure comprises the lower metal end structure, wherein the lower metal end structure comprises copper.
11. The integrated fluxgate device of claim 1, wherein the crack-resistant structure comprises the lower metal end structure, wherein the lower metal end structure comprises aluminum.
12. The integrated fluxgate device of claim 1, wherein the fluxgate core comprises iron and nickel.
13. The integrated fluxgate device of claim 1, wherein the fluxgate core is electrically isolated from lower winding segments disposed under the fluxgate core by a first intra-level dielectric (ILD) layer comprising silicon dioxide, disposed between the fluxgate core and the lower winding segments.
14. The integrated fluxgate device of claim 13, wherein the fluxgate core is electrically isolated from the upper winding segments disposed over the fluxgate core by a second ILD layer comprising silicon dioxide, disposed between the fluxgate core and the upper winding segments.
15. A method, comprising:
- forming a fluxgate core above a top surface of a substrate, the fluxgate core comprising magnetic material; and
- forming a crack-resistant structure at the end of the fluxgate core, wherein the crack-resistant structure comprises at least one of: a laterally rounded contour of the fluxgate core at the end having corner radii of at least 2 microns; a lower metal end structure extending under the end of the fluxgate core; or an upper metal end structure extending over the end of the fluxgate core.
16. The method of claim 15, wherein the crack-resistant structure comprises the laterally rounded contour of the fluxgate core at the end, the corner radii being approximately equal to half of a width of the fluxgate core at the end.
17. The method of claim 15, wherein forming the fluxgate core comprises:
- forming a layer of magnetic material over the lower dielectric layer;
- forming an etch mask over the layer of magnetic material, the mask covering an area for a fluxgate core, the etch mask having radii of at least 2 microns at corners of the end;
- removing the layer of magnetic material where exposed by the etch mask to form the fluxgate core; and
- subsequently removing the etch mask;
18. The method of claim 15, wherein the crack-resistant structure comprises the lower metal end structure and the upper metal end structure, the lower metal end structure comprising at least one of lower winding segments, and the upper metal end structure comprising at least one of upper winding segments.
19. The method of claim 15, wherein the crack-resistant structure comprises the lower metal end structure, and wherein forming the lower metal end structure comprises forming a lower metal element which is separate from lower winding segments, concurrently with the lower winding segments.
20. The method of claim 19, wherein the lower metal element occupies at least 50 percent of an area directly under the end of the fluxgate core.
21. The method of claim 15, wherein the crack-resistant structure comprises the upper metal end structure, and wherein forming the upper metal end structure comprises forming an upper metal element which is separate from upper winding segments, concurrently with the upper winding segments.
22. The method of claim 21, wherein the upper metal element occupies at least 50 percent of an area directly over the end of the fluxgate core.
23. The method of claim 15, wherein the crack-resistant structure comprises the lower metal end structure, wherein forming the lower metal end structure comprises a copper damascene process.
24. The method of claim 15, wherein the crack-resistant structure comprises the lower metal end structure, and wherein forming the lower metal end structure comprises an etched aluminum process, comprising:
- forming a layer of interconnect metal comprising aluminum over the top surface of the substrate;
- forming an etch mask over the layer of interconnect metal, wherein the etch mask covers an area for the lower metal end structure;
- removing the layer of interconnect metal where exposed by the etch mask, leaving the layer of interconnect metal under the etch mask to form the lower metal end structure; and
- subsequently removing the etch mask.
25. The method of claim 15, wherein forming the fluxgate core comprises forming a layer of the magnetic material comprising iron and nickel by a sputtering process.
26. The method of claim 15, further comprising the step of forming an ILD layer comprising silicon dioxide over lower winding segments before forming the fluxgate core.
27. The method of claim 15, further comprising the step of forming an ILD layer comprising silicon dioxide over the fluxgate core before forming upper winding segments.
Type: Application
Filed: Feb 11, 2016
Publication Date: Aug 17, 2017
Applicant: Texas Instruments Incorporated (Dallas, TX)
Inventors: Sudtida Lavangkul (Richardson, TX), Sopa Chevacharoenkul (Richardson, TX)
Application Number: 15/042,119