PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF
A manufacturing method of a package structure is described. The method includes at least the following steps. A carrier is provided. A semiconductor die and a sacrificial structure are disposed on the carrier. The semiconductor die is electrically connected to the bonding pads on the sacrificial structure through a plurality of conductive wires. As encapsulant is formed on the carrier to encapsulate the semiconductor die, the sacrificial structure and the conductive wires. The carrier is debonded, and at least a portion of the sacrificial structure is removed through a thinning process. A redistribution layer is formed on the semiconductor die and the encapsulant. The redistribution layer is electrically connected to the semiconductor die through the conductive wires.
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The present invention generally relates to a package structure, in particular, to a manufacturing method of a package structure using sacrificial structures for wire bonding.
2. Description of Related ArtIn order for electronic product design to achieve being light, slim, short, and small, semiconductor packaging technology has kept progressing, in attempt to develop products that are smaller in volume, lighter in weight, higher in integration, and more competitive in market. For example, integrated fan-out packages have become increasingly popular due to their compactness. However, in current fan-out package designs, if a package requires multi-chip stacking, two redistribution layers (RDL) and big pillars are generally required to provide the connection. For such package designs, the manufacturing process is usually complicated, time consuming and an issue of warpage also exist. Therefore, a simplified method/design having lower production cost is desired.
SUMMARY OF THE INVENTIONThe invention provides a package structure and a manufacturing method thereof, which uses sacrificial structures to fix the location of a wire for wire bonding. The method effectively reduces the size and manufacturing cost of the package, and overcomes the issue of wafer or panel warpage.
The invention provides a manufacturing method of a package structure. The method includes at least the following steps. A carrier is provided. A semiconductor die and a sacrificial structure are disposed on the carrier. The semiconductor die is electrically connected to bonding pads on the sacrificial structure through a plurality of conductive wires. As encapsulant is formed on the carrier to encapsulate the semiconductor die, the sacrificial structure and the conductive wires. The carrier is debonded, and the sacrificial structure is removed through a thinning process to reveal the bonding pads or the conductive wires. A redistribution layer is formed on the semiconductor die and the encapsulant. The redistribution layer is electrically connected to the semiconductor die through the conductive wires.
The invention further provides a package structure including an encapsulant, a stacked die, a plurality of bonding pads, a plurality of conductive wires, and a redistribution layer. The encapsulant has a top surface and a bottom surface opposite to the top surface. The stacked die is embedded in the encapsulant. The bonding pads are embedded in the encapsulant, wherein the bonding pads are exposed on a top surface of the encapsulant. The conductive wires are embedded in the encapsulant, wherein the stacked die is electrically connected to the bonding pads through the conductive wires. The redistribution layer is disposed on the stacked die and on the top surface of the encapsulant, wherein the redistribution layer is electrically connected to the stacked die through the bonding pads and the conductive wires.
Based on the above, a sacrificial structure is used to fix the position of the conductive wires. As such, when removing the sacrificial structure, the precise location of the wire or weld may be provided for further connection. In addition, a thickness of the semiconductor die may be effectively controlled during the thinning process, thus an overall size of the package structure may be reduced. Furthermore, with the presence of the sacrificial structure, an area ratio between the dies and the encapsulant is decreased. Thus, the issue of wafer or panel warpage may be resolved. Overall, the simplicity of the manufacturing process of the package structure may be realized, thereby reducing the manufacturing cost.
To make the above features and advantages of the present invention more comprehensible, several embodiments accompanied with drawings are described in detail as follows.
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
Reference will now be made in detail to the present preferred embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and the description to refer to the same or like parts.
The sacrificial structures 104B are disposed on the carrier 102. The sacrificial structures 104B are, for example, a sacrificial layer to be removed in a subsequent process. Thus, a material of the sacrificial layer is not particularly limited, as long as it can be removed through a thinning process described thereafter. The sacrificial structures 104B are disposed on the carrier 102 through an adhesive layer 103 located on the carrier 102. In some embodiments, the adhesive layer 103 may be a die attach film or formed from adhesive materials including an epoxy resin. The adhesive layer 103 may be formed by methods such as coating, inkjet printing, film attaching or other suitable methods for providing a structural support to eliminate the need for mechanical clamping between the sacrificial structures 104B and the carrier 102.
The semiconductor die 104A is disposed on the carrier 102, and located on the sacrificial structures 104B. In the present embodiment, the semiconductor die 104A is, for example stacked dies that comprise at least a bottom semiconductor die and a top semiconductor die stacked on top of each other. For instance, as shown in
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In the exemplary embodiment, the stacked die (semiconductor die 104A) has a first surface S1 exposed through the encapsulant 108. The connection terminals CT of the bonding pads 105 are coplanar with the first surface S1 of the stacked die 104A and the top surface 108A of the encapsulant 108. Furthermore, the stacked die 104A may include a first die (first semiconductor die) 104A-1, a second die (second semiconductor die) 104A-2 and a third die (third semiconductor die) 104A-3. The first die 104A-1 has the first surface S1 exposed through the encapsulant 108. The second die 104A-2 is stacked on the first die 104A-1 opposite to a side of the first surface S1. The second die 104A-2 cover portions of the first die 104A-1, and other portions of the first die 104A-1 not covered by the second die 104A-2 contain die pads DP (bonding pads 105). The die pads DP of the first die 104A-1 are electrically connected to the bonding pads 105 through the conductive wires 106. In addition, the third die 104A-3 is stacked on the second die 104A-2, the third die 104A-3 cover portions of the second die 104A-2, and other portions of the second die 104A-2 not covered by the third die 104A-3 contain die pads DP, the die pads DP of the second die 104A-2 are electrically connected to the bonding pads 105 through the conductive wires 106.
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In the embodiments shown above, the sacrificial structures are used to fix the position of the conductive wires. As such, when removing the sacrificial structure, the precise location of the wire or weld may be provided for further connection. Furthermore, a thickness of the semiconductor die may be effectively controlled during the thinning process, thus an overall size of the package structure may be reduced. In addition, with the presence of the sacrificial structure, an area ratio between the dies and the encapsulant is decreased. Thus, the issue of wafer or panel warpage may be resolved. Accordingly, the simplicity of the manufacturing process of the package structure may be realized, thereby reducing the overall manufacturing cost.
It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present invention without departing from the scope or spirit of the invention. In view of the foregoing, it is intended that the present invention covers modifications and variations of this invention provided fall within the scope of the following claims and their equivalents.
Claims
1. A manufacturing method of a package structure, comprising:
- providing a carrier,
- disposing a semiconductor die and at least one sacrificial structure on the carrier;
- electrically connecting the semiconductor die to bonding pads on the sacrificial structure through a plurality of conductive wires;
- forming an encapsulant on the carrier to encapsulate the semiconductor die, the sacrificial structure and the conductive wires;
- debonding the carrier,
- removing at least a portion of the sacrificial structure through a thinning process; and
- forming a redistribution layer on the semiconductor die and the encapsulant, the redistribution layer is electrically connected to the semiconductor die through the conductive wires.
2. The manufacturing method of a package structure according to claim 1, wherein the sacrificial structure is disposed on the carrier, and the semiconductor die is disposed on the sacrificial structure.
3. The manufacturing method of a package structure according to claim 2, wherein a width of the sacrificial structure is greater than a width of the semiconductor die.
4. The manufacturing method of a package structure according to claim 2, wherein the redistribution layer is formed on the semiconductor die and the encapsulant after the removal of the sacrificial structure, and a plurality of passive components is disposed on the redistribution layer.
5. The manufacturing method of a package structure according to claim 1, wherein the thinning process removes a portion of the semiconductor die to form a thinned semiconductor die.
6. The manufacturing method of a package structure according to claim 1, wherein the bonding pads or the conductive wires are revealed after the thinning process.
7. The manufacturing method of a package structure according to claim 1, wherein a plurality of the sacrificial structures is disposed on the carrier to surround the semiconductor die.
8. The manufacturing method of a package structure according to claim 7, wherein the semiconductor die and the sacrificial structures are disposed on a same plane and on a same surface of the carriers.
9. The manufacturing method of a package structure according to claim 7, further comprising:
- forming a plurality of passive components on the sacrificial structures, wherein the encapsulant is formed to encapsulate the passive components.
10. The manufacturing method of a package structure according to claim 9, wherein the redistribution layer is formed on the semiconductor die and the encapsulant after the removal of the sacrificial structure, and the redistribution layer is electrically connected to the semiconductor die and the passive components.
11. A package structure, comprising:
- an encapsulant having a top surface and a bottom surface opposite to the top surface;
- a stacked die embedded in the encapsulant;
- a plurality of bonding pads of a sacrificial structure encapsulated by the encapsulant, wherein connection terminals of the bonding pads are exposed on a top surface of the encapsulant;
- a plurality of conductive wires embedded in the encapsulant, each of the plurality of conductive wires having one end coupled to the stacked die and another end coupled to a terminal of the bonding pads opposite the connection terminals;
- a redistribution layer, directly formed on a first surface of the stacked die exposed through the encapsulant, the connection terminals of the bonding pads, and the top surface of the encapsulant, the redistribution layer is electrically connected to the stacked die through the bonding pads and the conductive wires, wherein the connection terminals of the bonding pads, the first surface of the stacked die, and the top surface of the encapsulant are coplanar to each other.
12. The package structure according to claim 11, further comprising at least one passive component embedded in the encapsulant.
13. The package structure according to claim 11, further comprising at least one passive component disposed on the redistribution layer.
14. The package structure according to claim 11, wherein the encapsulant has a first thickness, and the redistribution layer has a second thickness smaller than the first thickness.
15. The package structure according to claim 14, wherein the encapsulant provides a first rigidity, and the redistribution layer provides a second rigidity, the first rigidity is greater than the second rigidity.
16. (canceled)
17. The package structure according to claim 11, wherein the stacked die comprises:
- a first die having a first surface exposed through the encapsulant;
- a second die stacked on the first die opposite to a side of the first surface, the second die cover portions of the first die, and other portions of the first die not covered by the second die contain die pads, the die pads of the first die are electrically connected to the bonding pads through the conductive wires.
18. The package structure according to claim 17, wherein the stacked die further comprises:
- a third die stacked on the second die, the third die cover portions of the second die, and other portions of the second die not covered by the third die contain die pads, the die pads of the second die are electrically connected to the bonding pads through the conductive wires.
19. The package structure according to claim 11, further comprising a plurality of conductive balls disposed on the redistribution layer.
20. The package structure according to claim 19, wherein the bonding pads are arranged with a first pitch and the conductive balls are arranged with a second pitch, the second pitch is greater than the first pitch.
Type: Application
Filed: Jul 10, 2017
Publication Date: Jan 10, 2019
Applicant: Powertech Technology Inc. (Hsinchu County)
Inventors: Han-Wen Lin (Hsinchu County), Hung-Hsin Hsu (Hsinchu County), Shang-Yu Chang Chien (Hsinchu County), Nan-Chun Lin (Hsinchu County)
Application Number: 15/644,831