THREE-DIMENSIONAL SEMICONDUCTOR DEVICE

Abstract

Disclosed is a three-dimensional semiconductor device including a horizontal semiconductor layer including a plurality of well regions having a first conductivity and a separation impurity region having a second conductivity, and a plurality of cell array structures provided on the well regions of the horizontal semiconductor layer, respectively. The separation impurity region is between and in contact with the well regions. Each of the cell array structures comprises a stack structure including a plurality of stacked electrodes in a vertical direction to a top surface of the horizontal semiconductor layer, and a plurality of vertical structures penetrating the stack structure and connected to a corresponding well region.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

This U.S. nonprovisional patent application claims priority under 35 U.S.C. § 119 of Korean Patent Application No. 10-2017-0105666, filed on Aug. 21, 2017, in the Korean Intellectual Property Office, the entire contents of which are hereby incorporated by reference.

BACKGROUND

The present disclosure relates to a three-dimensional semiconductor device and a method of fabricating the same, and more particularly, to a highly-integrated three-dimensional semiconductor device and a method of fabricating the same.

Semiconductor devices have been highly integrated for satisfying high performance and low manufacture costs which are required by consumers. Since integration of the semiconductor devices is an important factor in determining product price, high integration is increasingly demanded. Integration of typical two-dimensional or planar semiconductor devices is primarily determined by the area occupied by a unit memory cell, such that it is greatly influenced by the level of technology for forming fine patterns. However, the extremely expensive processing equipment needed to increase pattern fineness may impose practical limitations on increasing the integration of the two-dimensional or planar semiconductor devices. Therefore, there have been proposed three-dimensional semiconductor memory devices having three-dimensionally arranged memory cells.

SUMMARY

Some exemplary embodiments of the present concepts provide a highly-integrated three-dimensional semiconductor device and a method of fabricating the same.

According to exemplary embodiments, a three-dimensional semiconductor memory device may include a horizontal semiconductor layer including a plurality of well regions having a first conductivity and a separation impurity region having a second conductivity, the separation impurity region being between and in contact with the plurality of well regions; and a plurality of cell array structures provided on the plurality of well regions of the horizontal semiconductor layer, respectively. Each of the cell array structures may comprise: a stack structure including a plurality of stacked electrodes stacked in a vertical direction on a top surface of the horizontal semiconductor layer; and a plurality of vertical structures penetrating the stack structure and connected to a corresponding well region.

According to exemplary embodiments of the present inventive concepts, a three-dimensional semiconductor memory device may include a peripheral logic structure including a peripheral logic circuit integrated on a semiconductor substrate; a horizontal semiconductor layer on the peripheral logic structure and including a plurality of well regions and a separation impurity region between adjacent well regions, the plurality of well regions being doped with first conductivity impurities and the separation impurity region being doped with second conductivity impurities; and a plurality of cell array structures on corresponding well regions of the horizontal semiconductor layer, each of the cell array structures including a plurality of three-dimensionally arranged memory cells.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a plan view showing a substrate with integrated three-dimensional semiconductor devices, according to exemplary embodiments.

FIG. 2 illustrates a simplified perspective view showing a three-dimensional semiconductor device, according to exemplary embodiments.

FIG. 3 illustrates a circuit diagram showing a cell array of a three-dimensional semiconductor device, according to exemplary embodiments.

FIGS. 4A and 4B illustrate simplified enlarged plan views showing section A of the three-dimensional semiconductor device of FIG. 1, according to exemplary embodiments.

FIG. 5 illustrates a plan view showing a three-dimensional semiconductor device, according to exemplary embodiments.

FIGS. 6A and 6B illustrate cross sectional views taken along line I-I′ of FIG. 5, showing a three-dimensional semiconductor device, according to exemplary embodiments.

FIG. 7A illustrates an enlarged cross-sectional view showing section A of FIG. 6A.

FIG. 7B illustrates an enlarged cross-sectional view showing section A of FIG. 6B.

FIGS. 8A to 8D illustrate plan views showing a horizontal semiconductor layer of a three-dimensional semiconductor device, according to exemplary embodiments.

FIG. 9 illustrates a plan view showing a three-dimensional semiconductor device, according to exemplary embodiments.

FIGS. 10A and 10B illustrate cross-sectional views showing the three-dimensional semiconductor device of FIG. 9, according to exemplary embodiments.

FIGS. 11, 12, and 13 illustrate plan views partially showing a three-dimensional semiconductor device, according to exemplary embodiments.

FIG. 14 illustrates a cross-sectional view taken along line II-IF of FIGS. 11, 12, and 13, showing a three-dimensional semiconductor device, according to exemplary embodiments.

FIG. 15 illustrates a cross-sectional view taken along line of FIGS. 12 and 13, showing a three-dimensional semiconductor device, according to exemplary embodiments.

FIG. 16 illustrates a plan view partially showing a three-dimensional semiconductor device, according to exemplary embodiments.

FIG. 17 illustrates a cross-sectional view taken along line IV-IV′ of FIG. 16, showing a three-dimensional semiconductor device, according to exemplary embodiments.

FIG. 18 illustrates a plan view showing an erase operation of a three-dimensional semiconductor device, according to exemplary embodiments.

FIGS. 19A to 19D illustrate plan views showing an erase operation of a three-dimensional semiconductor device, according to exemplary embodiments.

FIGS. 20 to 28 illustrate cross-sectional views showing a method of fabricating a three-dimensional semiconductor device, according to exemplary embodiments.

DETAILED DESCRIPTION OF EMBODIMENTS

It will be discussed hereinafter a three-dimensional semiconductor device and a method of fabricating the same according to exemplary embodiments in conjunction with the accompanying drawings.

FIG. 1 illustrates a plan view showing a substrate with integrated three-dimensional semiconductor devices, according to exemplary embodiments.

Referring to FIG. 1, a semiconductor substrate 1 (e.g., wafer) may include chip regions 10 on which semiconductor chips are formed and a scribe line region 20 between the chip regions 10. The chip regions 10 may be two-dimensionally arranged along first and second directions D1 and D2 crossing each other (e.g., perpendicular to each other). The scribe line region 20 may surround each of the chip regions 10, extending parallel to the perimeters of the chip regions 10. For example, the scribe line region 20 may lie between the chip regions 10 adjacent to each other in the first direction D1 and between the chip regions 10 adjacent to each other in the second direction D2. The scribe line region 20 may serve as the boundary between adjacent chip regions 10. For example, the scribe line region 20 may be the area in which a semiconductor substrate 1 is cut, thereby allowing the chip regions 10 to be physically separated from one another (e.g., to form separate semiconductor chips).

The semiconductor substrate 1 may be a bulk silicon substrate, a silicon-on-insulator (SOI) substrate, a germanium substrate, a germanium-on-insulator (GOI) substrate, a silicon-germanium substrate, or an epitaxial thin substrate obtained by performing a selective epitaxial growth (SEG) process. The semiconductor substrate 1 may include, for example, silicon (Si), germanium (Ge), silicon germanium (SiGe), gallium arsenic (GaAs), indium gallium arsenic (InGaAs), aluminum gallium arsenic (AlGaAs), or a mixture thereof.

In some embodiments, each chip region 10 of the semiconductor substrate 1 may be provided thereon with a three-dimensional semiconductor memory device including three-dimensionally arranged memory cells.

FIG. 2 illustrates a simplified perspective view showing a three-dimensional semiconductor device, according to exemplary embodiments. In some embodiment, the three-dimensional semiconductor device of FIG. 2 may be provided on a chip region 10 of a semiconductor substrate 1, such as disclosed above in connection with FIG. 1.

Referring to FIG. 2, a three-dimensional semiconductor device may include a peripheral logic structure PS and a cell array structure CS, which is stacked on the peripheral logic structure PS. For example, when viewed in a plan view, the peripheral logic structure PS and the cell array structure CS may overlap each other.

Although not illustrated in FIG. 2, the peripheral logic structure PS may include a row decoder, a column decoder, a page buffer, and a control circuit that controls a cell array. The integrated peripheral logic circuits constituting the peripheral logic structure PS may be provided on the semiconductor substrate 1.

The cell array structure CS may include a cell array consisting of a plurality of three-dimensionally arranged memory cells. In some embodiments, the cell array may be integrated on a horizontal semiconductor layer 100.

The cell array structure CS may include one or more mats, each of which includes a plurality of memory blocks BLK0 to BLKn. For example, each memory block BLK may be a data erase unit (e.g., the smallest unit of memory that can be erased in a single erase operation). Each of the memory blocks BLK0 to BLKn may include three-dimensionally arranged memory cells. For example, each of the memory blocks BLK0 to BLKn may include stacked structures stacked along a third direction D3 on the horizontal semiconductor layer 100, and these stacked structures may be repeated along first and second directions D1 and D2, such that multiple stacked structures are located in each of the first and second directions D1 and D2.

FIG. 3 illustrates a circuit diagram showing a cell array of a three-dimensional semiconductor device according to exemplary embodiments.

Referring to FIG. 3, a three-dimensional semiconductor device according to exemplary embodiments may be a three-dimensional NAND Flash memory device. As shown in FIG. 3, a cell array of the three-dimensional NAND Flash memory device may include a common source line CSL, a plurality of bit lines BL, and a plurality of cell strings CSTR between the common source line CSL and the bit lines BL. The cell strings CSTR may extend along a third direction D3 perpendicular to first and second directions D1 and D2.

The bit lines BL may be arranged two-dimensionally (e.g., in the D1 and D2 directions), and a plurality of the cell strings CSTR may be connected in parallel with one another to each of the bit lines BL. The cell strings CSTR may be connected in common to the common source line CSL. For example, a plurality of the cell strings CSTR may be disposed between a plurality of the bit lines BL and one common source line CSL. The common source line CSL may be provided in plural, and the plurality of the common source lines CSL may be arranged two-dimensionally. The common source lines CSL may be supplied with the same voltage or electrically controlled independently of each other.

Each of the cell strings CSTR may include a ground select transistor GST coupled to the common source line CSL, a string select transistor SST coupled to the bit line BL, and a plurality of memory cell transistors MCT between the ground and string select transistors GST and SST. The ground select transistor GST, the string select transistor SST, and the memory cell transistors MCT may be connected in series. The common source line CSL may be connected in common to sources of the ground select transistors GST.

A ground select line GSL, a plurality of word lines WL0 to WL3, and a plurality of string select lines SSL between the common source line CSL and the bit lines BL may be used as gate electrodes of the ground select transistor GST, the memory cell transistors MCT, and the string select transistor SST, respectively. Each of the memory cell transistors MCT may include a data storage element.

FIGS. 4A and 4B illustrate simplified enlarged plan views showing section A of a three-dimensional semiconductor device according to exemplary embodiments.

Referring to FIGS. 1, 4A, and 4B, each chip region 10 of the semiconductor substrate 1 may be provided thereon with a peripheral logic structure (see PS of FIG. 2) and a cell array structure (see CS of FIG. 2), as discussed with reference to FIG. 2.

Each chip region 10 of the semiconductor substrate 1 may be provided thereon with a peripheral logic structure (see PS of FIG. 2) constituted by row decoders ROW DEC, column decoders COL DEC, page buffers PBR, and control circuits CTRL.

Referring to FIG. 4A, each chip region 10 may be provided thereon with one mat MT or one block that constitutes the cell array structure (see CS of FIG. 2). In some embodiments, the mat MT may be provided on a single horizontal semiconductor layer (see 100 of FIG. 2). One mat MT may be disposed to partially overlap (e.g., in a vertical direction) the peripheral logic structure (see PS of FIG. 2). For example, the row decoders ROW DEC and the page buffers PBR may be located around the mat MT. The column decoders COL DEC and the control circuit CTRL may overlap the mat MT. In some embodiments, peripheral logic circuits constituting the peripheral logic structure (see PS of FIG. 2) may be freely or arbitrarily disposed beneath the mat MT.

Referring to FIG. 4B, each chip region 10 may be provided thereon with a plurality of mats MT or a plurality of blocks that constitute the cell array structure (see CS of FIG. 2). The plurality of mats MT may be arranged along first and second directions D1 and D2. In some embodiments, the plurality of mats MT may be provided on a single horizontal semiconductor layer (see 100 of FIG. 2).

FIG. 5 illustrates a plan view showing a three-dimensional semiconductor device according to exemplary embodiments. FIGS. 6A and 6B illustrate cross sectional views taken along line I-I′ of FIG. 5, showing a three-dimensional semiconductor device according to exemplary embodiments. FIG. 7A illustrates an enlarged cross-sectional view showing section A of FIG. 6A. FIG. 7B illustrates an enlarged cross-sectional view showing section A of FIG. 6B.

Referring to FIGS. 5, 6A, and 6B, a semiconductor substrate 1 may be a silicon substrate, a silicon-germanium substrate, a germanium substrate, or a single-crystalline epitaxial layer grown on a single-crystalline silicon substrate. For example, the semiconductor substrate 1 may be a silicon substrate having a first conductivity (e.g., p-type conductivity), and may include well regions (not shown).

A peripheral logic structure PS may include peripheral logic circuits integrated on an entire surface of the semiconductor substrate 1 and a lower buried insulation layer 50 covering the peripheral logic circuits.

The peripheral logic circuits may be, as discussed above, row and column decoders, a page buffer, and a control circuit, and may include NMOS and PMOS transistors, low- and high-voltage transistors, and a resistor that are integrated on the semiconductor substrate 1.

In more detail, the semiconductor substrate 1 may be provided therein with a device isolation layer 11 defining active regions. The semiconductor substrate 1 of the active regions may be provided thereon with peripheral gate electrodes 23 and gate dielectric layers interposed between the peripheral gate electrodes 23 and the semiconductor substrate 1. Source/drain regions 21 may be provided in the semiconductor substrate 1 on opposite sides of each of the peripheral gate electrodes 23. Peripheral circuit lines 33 may be electrically connected through peripheral circuit contact plugs 31 to the peripheral logic circuits. For example, the peripheral circuit contact plugs 31 and the peripheral circuit lines 33 may be coupled to the NMOS and PMOS transistors.

The lower buried insulation layer 50 may cover the peripheral gate electrodes 23, the peripheral circuit contact plugs 31, and the peripheral circuit lines 33. The lower buried insulation layer 50 may include a plurality of stacked insulation layers. For example, the lower buried insulation layer 50 may include a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, and/or a low-k dielectric layer.

A horizontal semiconductor layer 100 may be provided on an entire top surface of the lower buried insulation layer 50 covering the peripheral logic circuits. For example, the horizontal semiconductor layer 100 may be a single layer extending across first and second directions D1 and D2, where the first and second directions D1 and D2 are perpendicular to one another. The horizontal semiconductor layer 100 may have a bottom surface in contact with a top surface of the lower buried insulation layer 50. Components described herein as “contacting” each other, or “in contact with” each other, are directly connected together, without intervening elements (e.g., are touching).

The horizontal semiconductor layer 100 may consist of a semiconductor material including, for example, silicon (Si), germanium (Ge), silicon germanium (SiGe), gallium arsenic (GaAs), indium gallium arsenic (InGaAs), aluminum gallium arsenic (AlGaAs), or a mixture thereof. Alternatively or additionally, the horizontal semiconductor layer 100 may include a semiconductor doped with first conductivity impurities or an undoped intrinsic semiconductor. Further alternatively or additionally, the horizontal semiconductor layer 100 may have a single crystalline structure, an amorphous structure, and a polycrystalline structure, or a combination thereof.

In some embodiments, the horizontal semiconductor layer 100 may be a polycrystalline or single crystalline silicon layer deposited on the lower buried insulation layer 50 using a deposition process. Alternatively or additionally, the horizontal semiconductor layer 100 may be a polycrystalline or single crystalline silicon layer doped with n-type or p-type impurities.

In some embodiments, the horizontal semiconductor layer 100 may include a cell array region CAR and a connection region CNR around the cell array region CAR. The horizontal semiconductor layer 100 according to exemplary embodiments will be discussed below in detail with reference to FIGS. 8A to 17.

In some embodiments, a cell array structure CS may be provided on the horizontal semiconductor layer 100, and may include stack structures ST, vertical structures VS, and connection line structures CPLG, CL, WPLG, PPLG, and PCL.

On the horizontal semiconductor layer 100, the stack structures ST may extend in the first direction D1, being stacked in parallel with one another in the third direction D3, and may be arranged spaced apart from each other in the second direction D2. Each of the stack structures ST may include electrodes EL vertically stacked on the horizontal semiconductor layer 100 and insulation layers ILD interposed between the electrodes EL. The insulation layers ILD of the stack structures ST may have thicknesses that can be changed depending on characteristics of semiconductor memory devices. For example, one or more of the insulation layers ILD may be formed thicker than other ones of the insulation layers ILD. The insulation layers ILD may include silicon oxide. The electrodes EL may include a conductive material such as a semiconductor layer, a metal silicon layer, a metal layer, a metal nitride layer, or a combination thereof.

The stack structures ST may extend from the cell array region CAR to the connection region CNR along the first direction D1, and may have stepwise structures on the connection region CNR. The electrodes EL of the stack structures ST may have lengths in the first direction D1 that decrease with increasing distance from the horizontal semiconductor layer 100. For example, a length in the first direction D1 of individual ones of the vertically stacked electrodes EL may incrementally decrease from the bottommost one of the stacked electrodes EL to the topmost one of the stacked electrodes EL, such that the length of each electrode EL progressively decreases the closer the electrode EL is to the top of the stacked structure ST. The stack structures ST may have variously shaped stepwise structures on the connection region CNR.

In some embodiments, a three-dimensional semiconductor device may be a three-dimensional NAND Flash memory device, and cell strings (see CSTR of FIG. 3) may be integrated on the horizontal semiconductor layer 100. In this case, the stack structures ST may be configured such that topmost and bottommost electrodes EL may serve as gate electrodes of select transistors (see SST and GST of FIG. 3). For example, the topmost electrode EL may serve as a gate electrode of a string selector transistor (see SST of FIG. 3) that controls an electrical connection between a bit line BL and the vertical structures VS, and the bottommost electrode EL may serve as a gate electrode of a ground select transistor (see GST of FIG. 3) that controls an electrical connection between a common source line (see CSL of FIG. 3) and the vertical structures VS. Other electrodes EL between the topmost and bottommost electrodes EL may serve as control gate electrodes of memory cells and word lines (see WL0 to WL3 of FIG. 3) connecting the control gate electrodes.

The vertical structures VS may penetrate the stack structures ST to come into contact with the horizontal semiconductor layer 100 on the cell array region CAR. The vertical structures VS may be electrically connected to the horizontal semiconductor layer 100. As used herein, items described as being “connected” may be physically connected and/or electrically connected such that an electrical signal can be passed from one item to the other. For example, an electrically conductive component (e.g., a wire, pad, internal electrical line, etc.) physically connected to another electrically conductive component (e.g., a wire, pad, internal electrical line, etc.) may also be electrically connected to that component.

When viewed in a plan view, the vertical structures VS may be arranged along one direction or in a zigzag fashion. For example, the vertical structures VS may be arranged along straight lines in the first and/or second direction D1 and D2, or arranged in diagonal directions between adjacent ones of the vertical structures VS. On the connection region CNR, dummy vertical structures (not shown) may be provided to have substantially the same structure as those of the vertical structures VS.

The vertical structures VS may include a semiconductor material such as silicon (Si), germanium (Ge), or a mixture thereof. Alternatively or additionally, the vertical structures VS may include an impurity-doped semiconductor or an undoped intrinsic semiconductor. The vertical structures VS including a semiconductor material may serve as channels of the select transistors SST and GST and the memory cell transistors MCT discussed with reference to FIG. 3. The vertical structures VS may have bottom surfaces between top and bottom surfaces of the horizontal semiconductor layer 100. For example, bottom surfaces of the vertical structures VS may be below the top surface of the horizontal semiconductor layer 100 and above the bottom surface of the horizontal semiconductor layer 100. The vertical structures VS may each be provided at or on its upper end with a contact pad VSCP coupled to a bit line contact plugs BPLG. The conductive pad VSCP may be an impurity-doped region or may consist of a conductive material.

As illustrated in FIG. 7A, each of the vertical structures VS may include a first semiconductor pattern SP1 in contact with the horizontal semiconductor layer 100 and a second semiconductor pattern SP2 interposed between the first semiconductor pattern SP1 and a vertical insulation pattern VP. The first semiconductor pattern SP1 may have a hollow pipe shape or a macaroni shape. The first semiconductor pattern SP1 may have a closed bottom end and may have an inside filled with a buried insulation pattern VI. The first semiconductor pattern SP1 may be in contact with an inner wall of the second semiconductor pattern SP2 and the top surface of the horizontal semiconductor layer 100. The closed bottom end of the first semiconductor pattern SP1 may have a bottom surface in contact with the horizontal semiconductor layer 100. The first and second semiconductor patterns SP1 and SP2 may be undoped or doped with impurities whose conductivity is the same as that of the horizontal semiconductor layer 100. The first and second semiconductor patterns SP1 and SP2 may be polycrystalline or single crystalline.

In other embodiments, referring to FIGS. 6B and 7B, the vertical structures VS may include a lower semiconductor pattern LSP, which penetrates a lower portion of the stack structure ST to come into contact with the horizontal semiconductor layer 100, and an upper semiconductor pattern USP, which penetrates an upper portion of the stack structure ST to come into connection with the lower semiconductor pattern LSP.

The lower semiconductor pattern LSP may be an epitaxial pattern, and may consist of a semiconductor material having the same conductivity as that of the horizontal semiconductor layer 100. For example, the lower semiconductor pattern LSP may have a pillar shape penetrating the bottommost electrode EL. The lower semiconductor pattern LSP may have a bottom surface lower than the top surface of the horizontal semiconductor layer 100. The lower semiconductor pattern LSP may have a top surface higher than a top surface of the bottommost electrode EL. In some embodiments, the lower semiconductor pattern LSP may serve as a channel region of the ground select transistor GST discussed with reference to FIG. 3.

The upper semiconductor pattern USP may have a hollow pipe shape or a macaroni shape. The upper semiconductor pattern USP may have a closed bottom end. The upper semiconductor pattern USP may have an inside filled with a buried insulation pattern VI. The upper semiconductor pattern USP may have a bottom surface lower than a topmost surface of the lower semiconductor pattern LSP. For example, the upper semiconductor pattern USP may have a structure inserted into the lower semiconductor pattern LSP. The upper semiconductor pattern USP may include a semiconductor material. For example, the upper semiconductor pattern USP may include silicon (Si), germanium (Ge), or a mixture thereof, and may be an impurity-doped semiconductor or an undoped intrinsic semiconductor. The upper semiconductor pattern USP may have a single crystalline structure, an amorphous structure, a polycrystalline structure, a combination thereof. The upper semiconductor pattern USP may have a conductive pad at or on its upper end. The conductive pad may be an impurity-doped region or may consist of a conductive material.

In more detail, the upper semiconductor pattern USP may include a first semiconductor pattern SP1 and a second semiconductor pattern SP2. The first semiconductor pattern SP1 may be coupled to the lower semiconductor pattern LSP and may have a macaroni or pipe shape whose bottom end is closed. In some embodiments, a bottom surface of the closed bottom end of the first semiconductor pattern SP1 may be below a topmost surface of the lower semiconductor pattern LSP. For example, the structure inserted into the lower semiconductor pattern LSP may be the closed bottom end of the first semiconductor pattern SP1. The first semiconductor pattern SP1 may have an inside filled with a buried insulation pattern VI. The first semiconductor pattern SP1 may be in contact with an inner wall of the second semiconductor pattern SP2 and a top surface of the lower semiconductor pattern LSP.

Referring to FIGS. 7A and 7B, a vertical insulation pattern VP may be disposed between the stack structure ST and the vertical structure VS. In the embodiment illustrated in FIG. 7A, the vertical insulation pattern VP may extend in a third direction D3 and may surround a sidewall of the vertical structure VS. In the embodiment illustrated in FIG. 7B, the vertical insulation pattern VP may extend in the third direction D3 and may surround a sidewall of upper semiconductor pattern USP. For example, the vertical insulation pattern VP may have a macaroni shape or a pipe shape whose top and bottom ends are opened. In the embodiments of FIGS. 7A and 7B, the vertical insulation pattern VP may surround a sidewall of the first semiconductor pattern SP2 for the entire length of the first semiconductor pattern SP2 in the third direction D3, and the vertical insulation pattern VP may surround an upper portion of the sidewall of the second semiconductor pattern SP1 in the third direction D3. For example, the vertical insulation pattern VP may not cover a lower portion of the sidewall and bottom surface of the second semiconductor pattern SP1.

The vertical insulation pattern VP may consist of a single thin layer or a plurality of thin layers. In some embodiments, the vertical insulation pattern VP may be a portion of a data storage layer. For example, the vertical insulation pattern VP may include a tunnel insulation layer TIL, a charge storage layer CIL, and a blocking insulation layer BIL, which constitute a data storage layer of a NAND Flash memory device. For example, the charge storage layer CIL may be a trap insulation layer, a floating gate electrode, or an insulation layer including conductive nanodots. In more detail, the charge storage layer CIL may include one or more of a silicon nitride layer, a silicon oxynitride layer, a silicon-rich nitride layer, a nanocrystalline silicon layer, and a laminated trap layer. The tunnel insulation layer TIL may be one of materials having a band gap greater than that of the charge storage layer CIL, and the blocking insulation layer BIL may be a high-k dielectric layer such as an aluminum oxide layer and a hafnium oxide layer. Alternatively, the vertical insulation pattern VP may include a thin layer for a phase change memory device or for a changeable resistance memory device.

A horizontal insulation pattern HP may be provided between the vertical insulation pattern VP and sidewalls of the electrodes EL. The horizontal insulation pattern HP may extend onto top and bottom surfaces of the electrodes EL from the sidewalls of the electrodes EL. In the embodiment illustrated in FIG. 7B, the horizontal insulation pattern HP may have a portion that extends onto top and bottom surfaces of the bottommost electrode EL from between the bottommost electrode EL and a gate dielectric layer 15 on a side of the lower semiconductor pattern LSP. The horizontal insulation pattern HP may include a charge storage layer and a blocking insulation layer that are portions of a data storage layer of an NAND Flash memory device. Alternatively, the horizontal insulation pattern HP may include a blocking insulation layer.

Referring back to FIGS. 5, 6A, and 6B, common source regions CSR may be disposed in the horizontal semiconductor layer 100 between the stack structures ST adjacent to each other. The common source regions CSR may extend parallel to the stack structures ST in the first direction D1. The common source regions CSR may be formed by doping the horizontal semiconductor layer 100 with second conductivity impurities. The common source regions CSR may include, for example, n-type impurities (e.g., arsenic (As) or phosphorous (P)).

A common source plug CSP may be coupled to the common source region CSR. A sidewall insulation spacer SP may be interposed between the common source plug CSP and the stack structures ST. In a read or program operation of a three-dimensional NAND Flash memory device, a ground voltage may be applied through the common source plug CSP to the common source region CSR.

An upper buried insulation layer 150 may be disposed on the horizontal semiconductor layer 100 and may cover stepwise ends of the electrodes EL. A first interlayer dielectric layer 151 may cover top surfaces of the vertical structures VS, and may be provided thereon with a second interlayer dielectric layer 153 covering a top surface of the common source plug CSP. For example, top surfaces of the vertical structures VS may be coplanar with a top surface of the upper buried insulation layer 150, and a bottom surface of the first interlayer dielectric layer 151 may be in contact with top surfaces of the vertical structures VS and the upper buried insulation layer 150. Top surfaces of the common source plugs CSP may be coplanar with a top surface of the first interlayer dielectric layer 151, and a bottom surface of the second interlayer dielectric layer 153 may be in contact with top surfaces of the common source plugs CSP and the first interlayer dielectric layer 151. Terms such as “same,” “equal,” “planar,” or “coplanar,” as used herein when referring to orientation, layout, location, shapes, sizes, amounts, or other measures do not necessarily mean an exactly identical orientation, layout, location, shape, size, amount, or other measure, but are intended to encompass nearly identical orientation, layout, location, shapes, sizes, amounts, or other measures within acceptable variations that may occur, for example, due to manufacturing processes. The term “substantially” may be used herein to emphasize this meaning, unless the context or other statements indicate otherwise. For example, items described as “substantially the same,” “substantially equal,” or “substantially planar,” may be exactly the same, equal, or planar, or may be the same, equal, or planar within acceptable variations that may occur, for example, due to manufacturing processes.

Bit lines BL may be provided on the second interlayer dielectric layer 153, and may extend in the second direction D2 to thereby cross over the stack structures ST. The bit line BL may be electrically connected through bit line contact plug BPLG to the vertical structure VS. For example, a bottom surface of the bit line BL may be in contact with a top surface of the bit line contact plug BPLG, and a bottom surface of the bit line contact plug BPLG may be in contact with a top surface of the contact pad VSCP provided at or on the upper end of the vertical structure VS.

The stepwise ends of the stack structures ST may be provided thereon with a connection line structure that electrically connects the cell array structure CS to the peripheral logic structure PS. The connection line structure may include cell contact plugs CPLG that penetrate the upper buried insulation layer 150 and the first and second interlayer dielectric layers 151 and 153 to come into connection with corresponding ends of the electrodes EL, and may further include connection lines CL that are provided on the second interlayer dielectric layer 153 to come into connection with corresponding cell contact plugs CPLG. In some embodiments, each of the contact plugs CPLG may have substantially vertical sidewalls continuously extending from the top surface of the upper buried insulating layer 150 to the electrode EL to which the contact plug CPLG is connected. In addition, the connection line structure may include well contact plugs WPLG that are coupled to well pick-up regions PUR in the horizontal semiconductor layer 100, connection contact plugs PPLG that penetrate the upper and lower buried insulation layers 150 and 50 to come into connection with peripheral circuit lines 33, and peripheral connection lines PCL that connect the well contact plugs WPLG to the connection contact plugs PPLG.

The well pick-up regions PUR may be disposed in the horizontal semiconductor layer 100, and may lie adjacent to opposite ends of each of the stack structures ST. A top surface of the well pick-up regions PUR may be coplanar with a top surface of the horizontal semiconductor layer 100. The well pick-up regions PUR may have the same conductivity as that of the horizontal semiconductor layer 100, and may have an impurity concentration greater than that of the horizontal semiconductor layer 100. For example, the well pick-up regions PUR may include heavily doped p-type impurities (e.g., boron (B)). In some embodiments, in an erase operation of a three-dimensional NAND Flash memory device, an erase voltage may be applied to the well pick-up regions PUR through the connection contact plugs PPLG and the well contact plugs WPLG.

FIGS. 8A to 8D illustrate plan views showing a horizontal semiconductor layer of a three-dimensional semiconductor device according to exemplary embodiments.

Referring to FIGS. 8A and 8B, the horizontal semiconductor layer 100 may consist of a single layer that extends in the first and second directions D1 and D2 on the entire surface of the semiconductor substrate 1 discussed with reference to FIG. 1. For example, the single layered horizontal semiconductor layer 100 may cover a plurality of the chip regions 10.

The horizontal semiconductor layer 100 may include a plurality of well regions 100a having a first conductivity and at least one separation impurity region 100b having a second conductivity different from the first conductivity. The separation impurity region 100b may be in contact with neighboring well regions 100a. The separation impurity region 100b may be provided around each of the well regions 100a. For example, when the plurality of well regions 100a are doped with p-type impurities, the separation impurity region 100b may be doped with n-type impurities. Alternatively, when the plurality of well regions 100a are doped with n-type impurities, the separation impurity region 100b may be doped with p-type impurities. In some embodiments, the separation impurity region 100b and the well regions 100a may be provided to form PN junctions. The separation impurity regions 100b may be regions that do not have memory cells formed vertically above them. For example, no cell array structures are formed above the separation impurity regions 100b, and no cell array structures are formed to overlap the separation impurity regions 100b, when viewed in a plan view.

As illustrated in FIGS. 8A and 8B, a plurality of the well regions 100a may be provided on each chip region 10. The well regions 100a may be arranged along the first and second directions D1 and D2.

Referring to FIG. 8A, a pair of the separation impurity regions 100b may be provided along the first and second directions D1 and D2 to thereby define the well regions 100a. For example, a pair of the separation impurity regions 100b may extend in the second direction D2 between the well regions 100a adjacent to each other in the first direction D1. In addition, another pair of the separation impurity regions 100b may extend in the first direction D1 between the well regions 100a adjacent to each other in the second direction D2. The pairs of separation impurity regions 100b may extend along all perimeter sides of the well regions 100a, and the separation impurity regions 100b may surround the well regions 100a.

In more detail, the separation impurity regions 100b may be provided spaced part from each other, and a dummy impurity region 100c may be provided between the separation impurity regions 100b and may be in contact with the separation impurity regions 100b. The dummy impurity region 100c may form PN-junctions with the separation impurity regions 100b. The dummy impurity region 100c may have the same first conductivity as those of the well regions 100a, but a first-conductivity impurity concentration may be different between the dummy impurity region 100c and the well regions 100a. The different regions 100a, 100b, and 100c may be referred to herein as first, second, or third regions, to distinguish from each other (with the labels “first,” “second,” and “third” not necessarily corresponding respectively to the three regions). Labels such as “first,” second,” “third,” etc., may be used in the specification or claims to describe other elements herein to distinguish those elements from each other. In some embodiments, the first-conductivity impurity concentration of the dummy impurity region 100c may be less than those of the well regions 100a. In this case, a breakdown voltage may be securely obtained when a reverse bias is applied to the PN junction between the dummy impurity region 100c and the separation impurity region 100b.

Referring to FIG. 8B, a plurality of the well regions 100a may be defined by single separation impurity regions 100b extending in the first and second directions D1 and D2. For example, the separation impurity region 100b may be provided between the well regions 100a adjacent to each other in the first and second directions D1 and D2. The separation impurity region 100b may extend along all perimeter sides of the well regions 100a, and the separation impurity region 100b may surround the well regions 100a. In such a configuration, one separation impurity region 100b may form PN junctions with a plurality of the well regions 100a adjacent to each other.

In some embodiments, the horizontal semiconductor layer 100 may have openings OP between the chip regions 10, and may have bridge portions between the openings OP. For example, the bridge portions may be the portions between neighboring openings OP. The opening OP of the horizontal semiconductor layer 100 may expose the lower buried insulation layer 50 of the peripheral logic structure PS discussed with reference to FIGS. 5, 6A, and 6B. For example, the bridge portions of the horizontal semiconductor layer 100 may be provided to run across the scribe line region 20. The bridge portion of the horizontal semiconductor layer 100 may have a width less than that in the first or second direction D1 or D2 of the well region 100a. The width of the bridge portion may be the same as a width of the adjacent openings OP. In some embodiments, the separation impurity regions 100b may also be provided in the bridge portions of the horizontal semiconductor layer 100. For example, one or more of the separation impurity regions 100b may have a width less than those of the well regions 100a.

Referring to FIGS. 8C and 8D, the well regions 100a of the horizontal semiconductor layer 100 may correspond to corresponding chip regions 10. The separation impurity regions 100b may be provided between the chip regions 10.

Referring to FIG. 8C, the horizontal semiconductor layer 100 may include the well regions 100a provided on corresponding chip regions 10 and the separation impurity regions 100b provided between the chip regions 10. As discussed above, the horizontal semiconductor layer 100 may have the openings OP between the chip regions 10, or at an edge of the chip region 10. A portion of the scribe line region 20 may overlap the bridge portions and the openings OP of the horizontal semiconductor layer 100.

In the embodiment illustrated in FIG. 8C, a pair of the separation impurity regions 100b may be provided in each bridge portion of the horizontal semiconductor layer 100, and the dummy impurity region 100c may be provided between the separation impurity regions 100b. The pairs of separation impurity regions 100b may extend along all perimeter sides of the well regions 100a, and the separation impurity regions 100b may surround the well regions 100a. As discussed above in connection with FIG. 8A, the separation impurity regions 100b may be doped with second conductivity impurities, and the dummy impurity region 100c may be doped with first conductivity impurities. Alternatively, in the embodiment illustrated in FIG. 8D, one separation impurity region 100b may be provided in each bridge portion of the horizontal semiconductor layer 100. In such a configuration, the bridge portions of the horizontal semiconductor layer 100 may include at least one PN junction. The separation impurity region 100b may extend along all perimeter sides of the well regions 100a, and the separation impurity region 100b may surround the well regions 100a.

According to exemplary embodiments, each well region 100a of the horizontal semiconductor layer 100 discussed with reference to FIGS. 8A to 8D may be provided thereon with the cell array structure CS discussed with reference to FIGS. 5, 6A, and 6B. This will be described in detail with reference to FIGS. 9 to 17.

In the embodiments illustrated in FIGS. 8A to 8D, the semiconductor substrate 1 may be cut along the scribe line region 20, and may thus be separated into a plurality of semiconductor chips. The cutting may be done on portions of the horizontal semiconductor layer 100 that are formed on the scribe line region 20.

FIG. 9 illustrates a plan view showing a three-dimensional semiconductor device according to exemplary embodiments. FIGS. 10A and 10B illustrate cross-sectional views showing the three-dimensional semiconductor device shown in FIG. 9 according to exemplary embodiments. The description of technical features the same as those in the three-dimensional semiconductor devices discussed with reference to FIGS. 5, 6A, 6B, and 8A to 8D may be omitted in the interest of brevity of explanation.

Referring to FIGS. 9, 10A, and 10B, a semiconductor substrate 1 may be provided thereon with a peripheral logic structure PS including peripheral logic circuits PTR, and a horizontal semiconductor layer 100 may be provided on the peripheral logic structure PS.

The horizontal semiconductor layer 100 may extend along first and second directions D1 and D2. The horizontal semiconductor layer 100 may, as discussed above, include well regions 100a1, 100a2, 100a3, and 100a4 and separation impurity regions 100b between the well regions 100a1 to 100a4. As discussed above, any of the well regions 100a1 to 100a4 may have an opposite conductivity to that of any of the separation impurity regions 100b. Accordingly, the separation impurity regions 100b and the well regions 100a1 to 100a4 may be provided to form PN junctions.

In some embodiments, the well regions 100a1 to 100a4 may include a first well region 100al, a second well region 100a2, a third well region 100a3, and a fourth well region 100a4. The separation impurity regions 100b may be pairs of separation impurity regions 100b, and may be spaced apart from each other between the first to fourth well regions 100a1 to 100a4, and may be provided therebetween with the dummy impurity region 100c having a first conductivity. The separation impurity regions 100b may form PN junctions with the first to fourth well regions 100a1 to 100a4, and the dummy impurity region 100c may form PN junctions with the separation impurity regions 100b. As discussed above, the dummy impurity region 100c and the first to fourth well regions 100a1 to 100a4 may have the same conductivity, but an impurity concentration of the dummy impurity region 100c may be less than those of the first to fourth well regions 100a1 to 100a4.

Each of the first to fourth well regions 100a1 to 100a4 of the horizontal semiconductor layer 100 may be provided thereon with a cell array structure CS discussed above. For example, a stack structure ST and its corresponding vertical structures VS may be provided on each of the first to fourth well regions 100a1 to 100a4.

The stack structures ST may have stepwise structures on corresponding edges of the first to fourth well regions 100a1 to 100a4. In some embodiments, the horizontal semiconductor layer 100 may be configured such that a central portion of each of the first to fourth well regions 100a1 to 100a4 may correspond to a cell array region (see CAR of FIG. 5), and an edge portion surrounding the central portion of each of the first to fourth well regions 100a1 to 100a4 may correspond to a connection region (see CNR of FIG. 5).

The separation impurity regions 100b may be provided between the stack structures ST adjacent to each other. On each of the first to fourth well regions 100a1 to 100a4, the vertical structures VS may penetrate the stack structures ST to come into connection with the first to fourth well regions 100a1 to 100a4 of the horizontal semiconductor layer 100. An upper buried insulation layer 150 may be provided on the horizontal semiconductor layer 100, and may cover the stack structures ST and the vertical structures VS. As discussed above, the horizontal semiconductor layer 100 may have one or more openings (see OP of FIGS. 8A to 8D) that expose the lower buried insulation layer 50. The opening may be provided at a side of each of the first to fourth well regions 100a1 to 100a4, and may be filled with the upper buried insulation layer 150.

A connection line structure may be provided on an edge portion of each of the first to fourth well regions 100a1 to 100a4. The connection line structure may include cell contact plugs CPLG coupled to electrodes EL of the stack structure ST, a well contact plug WPLG coupled to the horizontal semiconductor layer 100, and a connection contact plug PPLG penetrating the upper and lower buried insulation layers 150 and 50. The connection line structures provided on neighboring ones of the first to fourth well regions 100a1 to 100a4 may be arranged mirror-symmetric to each other. In an erase operation of a three-dimensional NAND Flash memory device, an erase voltage may be applied from the peripheral logic circuits PTR to well pick-up regions PUR of the horizontal semiconductor layer 100 through the well contact plug WPLG, the connection contact plug PPLG, and peripheral connection lines PCL.

In some embodiments, as illustrated in FIG. 10A, the separation impurity regions 100b and the dummy impurity region 100c may be electrically floated. Alternatively, referring to FIG. 10B, the dummy impurity region 100c may be connected to a peripheral contact plug 35 of the peripheral logic structure PS. In this case, when a three-dimensional semiconductor device is operated, a predetermined voltage may be applied from the peripheral logic circuit PTR to the dummy impurity region 100c.

FIGS. 11, 12, 13, and 16 illustrate plan views partially showing a three-dimensional semiconductor device according to exemplary embodiments. FIG. 14 illustrates a cross-sectional view taken along line II-IF of FIGS. 11, 12, and 13, showing a three-dimensional semiconductor device according to exemplary embodiments. FIG. 15 illustrates a cross-sectional view taken along line of FIGS. 12 and 13, showing a three-dimensional semiconductor device according to exemplary embodiments. FIG. 17 illustrates a cross-sectional view taken along line IV-IV′ of FIG. 16, showing a three-dimensional semiconductor device according to exemplary embodiments. The description of technical features the same as those in the three-dimensional semiconductor devices discussed with reference to FIGS. 5, 6A, 6B, and 8A to 8D may be omitted in the interest of brevity of explanation.

Referring to FIGS. 11 and 14, the horizontal semiconductor layer 100 according to exemplary embodiments may be provided on the peripheral logic structure PS including the peripheral logic circuits PTR integrated on the semiconductor substrate 1.

For example, the horizontal semiconductor layer 100 may include the first to fourth well regions 100a1, 100a2, 100a3, and 100a4. A pair of the separation impurity regions 100b may be provided between the first to fourth well regions 100a1 to 100a4. As discussed above, any of the first to fourth well regions 100a1 to 100a4 may have an opposite conductivity to that of any of the separation impurity regions 100b. Each of the first to fourth well regions 100a1 to 100a4 may form PN junctions with the separation impurity regions 100b in the first and second directions D1 and D2.

Referring to FIGS. 12, 13, and 16, the separation impurity regions 100b may have a width in the first or second direction D1 or D2 less than that of each of the first to fourth well regions 100a1 to 100a4. For example, the separation impurity regions 100b may form PN junctions with a portion of each of the first to fourth well regions 100a1 to 100a4. The horizontal semiconductor layer 100 may have the openings OP between the first to fourth well regions 100a1 to 100a4. The openings OP may penetrate the horizontal semiconductor layer 100 to thereby expose the lower buried insulation layer 50. The openings OP may also be provided between the stack structures ST adjacent to each other.

Referring to FIGS. 16 and 17, the bridge portions may be provided between the chip regions 10 and the first to fourth well regions 100a1 to 100a4 each of which is provided on a corresponding one of the chip regions 10. In such a configuration, the separation impurity region 100b may be provided on the entirety of the bridge portions.

FIG. 18 illustrates a plan view showing an erase operation of a three-dimensional semiconductor device according to exemplary embodiments. FIGS. 19A to 19D illustrate plan views showing an erase operation of a three-dimensional semiconductor device according to exemplary embodiments. In the embodiments that follow, a three-dimensional semiconductor device may be the three-dimensional NAND Flash memory device discussed with reference to FIG. 3. The description of technical features the same as those in the three-dimensional semiconductor devices discussed with reference to FIGS. 5, 6A, 6B, and 8A to 8D may be omitted in the interest of brevity of explanation.

Referring to FIGS. 18 and 19A to 19D, in an erase operation of a three-dimensional NAND Flash memory device, an erase voltage V_ERS may be applied to a selected one of the first to fourth well regions 100a1 to 100a4, and thus the erase operation may be independently performed on each of the first to fourth well regions 100a1 to 100a4.

When the erase operation of a three-dimensional NAND Flash memory device is performed on each of the first to fourth well regions 100a1 to 100a4, a voltage difference may be provided between the vertical structure VS consisting of a semiconductor material and the electrodes EL constituting the stack structure ST, and thereby charges stored in the charge storage layer may be injected into the vertical structure VS.

In the erase operation of a three-dimensional NAND Flash memory device, the erase voltage V_ERS (e.g., about 10 V to about 20 V) may be applied from the peripheral logic circuit PTR to the horizontal semiconductor layer 100. In some embodiments, the erase operation of a three-dimensional semiconductor device may be independently performed on each of the first to fourth well regions 100a1 to 100a4. For example, the erase voltage V_ERS may be applied to a selected one of the first to fourth well regions 100a1 to 100a4, and a ground voltage GND may be applied to unselected ones of the first to fourth well regions 100a1 to 100a4. For example, the erase voltage V_ERS may be applied to the first well region 100al, and the ground voltage GND may be applied to remaining second to fourth well regions 100a2 to 100a4.

When the erase operation is performed on the selected first well region 100al, the ground voltage GND (or 0 V) may be applied to the electrodes EL serving as word lines of the stack structure ST, and an electrical floating state may be provided to the bottommost electrode EL serving as a ground select line, the topmost electrode EL serving as a string select line, the bit line BL, and the common source line (see CSL of FIG. 3).

In some embodiments, when the erase operation is independently performed on each of the first to fourth well regions 100a1 to 100a4, at least one PN junction may be produced between the selected first well region 100a1 and the unselected second to fourth well regions 100a2 to 100a4, such that a reverse bias may be applied to the at least one PN junction produced between the first to fourth well regions 100a1 to 100a4. Accordingly, the selected first well region 100a1 may be electrically separated from the unselected second to fourth well regions 100a2 to 100a4.

In detail, according to the embodiments illustrated in FIGS. 19A and 19B, the first to fourth well regions 100a1 to 100a4 may be doped with p-type impurities, and the separation impurity regions 100b may be doped with n-type impurities.

In the erase operation of a three-dimensional semiconductor device illustrated in FIG. 19A, a forward bias may be applied to a first PN junction PN1 between the selected first well region 100a1 and the separation impurity region 100b, and a reverse bias may be applied to a second PN junction PN2 between the separation impurity region 100b and the dummy impurity region 100c. In addition, a reverse bias may be applied to first PN junctions PN1 between the unselected second to fourth well regions 100a2 to 100a4 and the separation impurity region 100b in contact therewith. Accordingly, the single horizontal semiconductor layer 100 may be in a state that the selected first well region 100a1 is electrically separated from the unselected second to fourth well regions 100a2 to 100a4.

In the erase operation of a three-dimensional semiconductor device illustrated in FIG. 19B, a forward bias may be applied to a first PN junction PN1 between the selected first well region 100a1 and the separation impurity region 100b in contact therewith. A reverse bias may be applied to first PN junctions PN1 between the unselected second to fourth well regions 100a2 to 100a4 and the separation impurity region 100b in contact therewith. Accordingly, the selected first well region 100a1 may be electrically separated from the unselected second to fourth well regions 100a2 to 100a4.

In addition, according to the embodiments illustrated in FIGS. 19A and 19B, under the same erase voltage condition discussed above, the erase voltage V_ERS may be transmitted to the vertical structures VS disposed on the selected first well region 100a1. Therefore, since a great difference in voltage is provided between the vertical structure VS and the word lines, the Fowler-Nordheim tunneling phenomenon may take place such that charges stored in the charge storage layer may be injected into the vertical structure VS.

According to the embodiments illustrated in FIGS. 19C and 19D, the first to fourth well regions 100a1 to 100a4 may be doped with n-type impurities, and the separation impurity regions 100b may be doped with p-type impurities.

In an erase operation of the three-dimensional semiconductor device illustrated in FIG. 19C, a reverse bias may be applied to a first PN junction PN1 between the selected first well region 100a1 and the separation impurity region 100b in contact therewith. Accordingly, the single horizontal semiconductor layer 100 may be in a state that the selected first well region 100a1 is electrically separated from the unselected second to fourth well regions 100a2 to 100a4.

In the erase operation of a three-dimensional semiconductor device illustrated in FIG. 19D, a reverse bias may be applied to a first PN junction PN1 between the selected first well region 100a1 and the separation impurity region 100b in contact therewith. In addition, a forward bias may be applied to first PN junctions PN1 between the unselected second to fourth well regions 100a2 to 100a4 and the separation impurity region 100b in contact therewith. Since PN junctions, to which a reverse bias is applied, are produced between the selected first well region 100a1 and the unselected second to fourth well regions 100a2 to 100a4, the selected first well region 100a1 may be electrically separated from the unselected second to fourth well regions 100a2 to 100a4.

In addition, according to the embodiments illustrated in FIGS. 19C and 19D, under the same erase voltage condition discussed above, a gate induced drain leakage (GIDL) may be used to erase charges stored in the data storage layer. For example, when the erase voltage V_ERS is applied to the selected first well region 100a1, holes may be created by the gate induced drain leakage (GIDL) occurred at the vertical structures VS adjacent to the bottommost electrode EL. The created holes may be injected into the vertical structures VS adjacent to the electrodes EL serving as word lines, and electrons may be injected into the selected first well region 100a1. In this case, charges stored in the charge storage layer may be injected into the vertical structures VS to thereby erase data.

FIGS. 20 to 28 illustrate cross-sectional views showing a method of fabricating a three-dimensional semiconductor device according to exemplary embodiments.

Referring to FIG. 20, as discussed above with reference to FIG. 1, a semiconductor substrate 1 may be prepared to include chip regions and a scribe line region. For example, the semiconductor substrate 1 may have a first conductivity (e.g., p-type conductivity). A well region (not shown) may be formed in the semiconductor substrate 1. A device isolation layer 11 may be provided in the semiconductor substrate 1 to define active regions.

Peripheral logic circuits PTR may be formed on the semiconductor substrate 1 of each of the chip regions. For example, peripheral logic circuits PTR may be formed in the active regions of the semiconductor substrate 1. Peripheral line structures, i.e., peripheral contact plugs and peripheral circuit lines, connected to the peripheral logic circuits PTR may further be formed on the semiconductor substrate 1 of each of the chip regions. For example, row and column decoders, page buffers, and control circuits may be formed on the semiconductor substrate 1 of each of the chip regions. The peripheral logic circuits PTR may include, for example, high- and low-voltage transistors.

The formation of the peripheral logic circuits PTR may include sequentially forming on the semiconductor substrate 1 a peripheral gate dielectric layer and a peripheral gate electrode 23 and then forming source/drain regions 21 by implanting impurities into the semiconductor substrate 1 on opposite sides of the peripheral gate electrode 23. A peripheral gate spacer may be formed on a sidewall of the peripheral gate electrode 23.

Referring to FIG. 21, after the peripheral logic circuits PTR and the peripheral line structures are formed, a lower buried insulation layer 50 may be formed to cover an entire surface of the semiconductor substrate 1. As such, the semiconductor substrate 1 may be provided thereon with a peripheral logic structure PS. The lower buried insulation layer 50 may have a flat top surface, and may be patterned to expose an edge top surface of the semiconductor substrate 1.

The lower buried insulation layer 50 may include a single insulation layer or a plurality of stacked insulation layers, such as a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, and/or a low-k dielectric layer.

Referring to FIG. 22, a horizontal semiconductor layer 100 may be formed on the lower buried insulation layer 50. For example, the horizontal semiconductor layer 100 may extend along first and second directions D1 and D2. The horizontal semiconductor layer 100 may include a semiconductor material, and may have a single crystalline or polycrystalline structure. For example, a polysilicon layer may be deposited to cover the entire surface of the semiconductor substrate 1, which may form the horizontal semiconductor layer 100. In some embodiments, first conductivity impurities may be doped when the polysilicon layer is deposited. Alternatively, after an undoped polysilicon layer is deposited, first conductivity impurities may be doped into a lower portion of the horizontal semiconductor layer 100 to form the well regions 100a. After the polysilicon layer is deposited, a laser annealing process may be performed to reduce a grain boundary of the polysilicon layer.

In some embodiments, a deposition process may be employed to form the horizontal semiconductor layer 100, such that the horizontal semiconductor layer 100 may cover a top surface and a sidewall of the lower buried insulation layer 50 and the edge top surface of the semiconductor substrate 1. For example, the horizontal semiconductor layer 100 may be in direct contact with an edge of the semiconductor substrate 1.

Separation impurity regions 100b may be formed to define well regions 100a in the horizontal semiconductor layer 100. As discussed above with reference to FIGS. 8A to 8D, the separation impurity regions 100b may extend along the first and second directions D1 and D2, and may be formed between the well regions 100a adjacent to each other. The separation impurity regions 100b may be formed by doping the horizontal semiconductor layer 100 with impurities having opposite conductivity to that of the horizontal semiconductor layer 100, or to those of the well regions 100a. For example, when the horizontal semiconductor layer 100 is doped with first conductivity impurities (e.g., p-type conductivity impurities), the separation impurity regions 100b may be formed by doping second conductivity impurities (e.g., n-type conductivity impurities). The dummy impurity region 100c may be formed of the portions of the horizontal semiconductor layer 100 between pairs of the separation impurity regions 100b, and may be doped with the first conductivity impurities (e.g., p-type conductivity impurities).

After the separation impurity regions 100b are formed, as discussed above with reference to FIGS. 8A to 8D, the horizontal semiconductor layer 100 may be partially etched to form openings (see OP of FIGS. 8A to 8D) that expose the lower buried insulation layer 50. The openings may be formed between the well regions 100a. An insulating material may fill the openings formed in the horizontal semiconductor layer 100.

Referring to FIG. 23, a thin-layer structure 110 may be formed to cover an entire surface of the horizontal semiconductor layer 100. The thin-layer structure 110 may include sacrificial layers SL and insulation layers ILD alternately and repeatedly stacked. The sacrificial layers SL of the thin-layer structure 110 may have the same thickness. The sacrificial layers SL and the insulation layers ILD may be formed using a thermal chemical vapor deposition (CVD) process, a plasma enhanced CVD process, or an atomic layer deposition (ALD) process. Any of the deposition processes may be employed to form the thin-layer structure 110 that extends onto a top surface of the semiconductor substrate 1 from a top surface of the horizontal semiconductor layer 100.

The thin-layer structure 110 may be formed in such a way that the sacrificial layers SL are formed of a material that can be etched with an etch selectivity to the insulation layers ILD. For example, the sacrificial layers SL and the insulation layers ILD may exhibit a high etch selectivity to a chemical solution for wet etching and a low etch selectivity to an etching gas for dry etching. For example, the sacrificial layers SL and the insulation layers ILD may be formed of insulating materials exhibiting different etch selectivities from each other. For example, the sacrificial layers SL may be formed of a silicon nitride layer, and the insulation layers ILD may be formed of a silicon oxide layer.

Referring to FIG. 24, the thin-layer structure 110 may experience a patterning process to form mold structures 120 on corresponding well regions 100a of the horizontal semiconductor layer 100. The mold structures 120 may be formed by performing a trimming process on the thin-layer structure 110. The trimming process may include forming a mask pattern (not shown) on the thin-layer structure 110, partially etching the thin-layer structure 110, reducing a horizontal area of the mask pattern, and alternately and repeatedly performing the etching and reducing steps. The trimming process may cause the mold structures 120 to have stepwise structures on corresponding edges of the well regions 100a. A portion of an outermost mold structure 120 may extend onto a sidewall of the peripheral logic structure PS from the edge of the semiconductor substrate 1, such that the portion of the outermost mold structure 120 may be in direct contact with the edge of the semiconductor substrate 1 (see FIG. 26).

Referring to FIGS. 25 and 26, an upper buried insulation layer 150 may be formed on the horizontal semiconductor layer 100 on which the mold structures 120 are formed. The upper buried insulation layer 150 may be formed by deposing a thick insulation layer to cover the mold structures 120 and then performing a planarization process on the insulation layer. The upper buried insulation layer 150 may be formed of an insulating material exhibiting an etch selectivity to the sacrificial layers SL.

After the upper buried insulation layer 150 is formed, a hardmask layer MP may be formed to have openings that expose portions of each mold structure 120. The hardmask layer MP may include a silicon-containing material such as silicon oxide, silicon nitride, silicon oxynitride, or polysilicon; a carbon-containing material such as an amorphous carbon layer (ACL) or a spin-on-hardmask (SOH) layer; a metal-containing material such as tungsten; or an organic material.

In the embodiment illustrated in FIG. 25, the hardmask layer MP may be formed to cover the entire surface of the semiconductor substrate 1, and may have a portion, on the edge of the semiconductor substrate 1, in direct contact with the horizontal semiconductor layer 100 and the edge top surface of the semiconductor substrate 1.

In another embodiment illustrated in FIG. 26, when the portion of the outermost mold structure 120 extends onto the sidewall of the peripheral logic structure PS, the hardmask layer MP may be spaced apart from the horizontal semiconductor layer 100. For example, the hardmask layer MP may be separated from the semiconductor layer 100 by the mold structure 120.

Successively, the mold structures 120 may be anisotropically etched on their portions exposed to the openings of the hardmask layer MP to thereby form vertical holes VH in each mold structure 120 that expose a top surface of the well region 100a of the horizontal semiconductor layer 100. When viewed in a plan view, the vertical holes VH may be arranged along one direction or in a zigzag fashion. The anisotropic etching process on the mold structures 120 may be a plasma etching process, a reactive ion etching (RIE) process, a high-frequency inductively coupled plasma reactive ion etching (ICP-RIE) process, or an ion beam etching (IBE) process.

In some embodiments, when the anisotropic etching process is performed using plasma, ions included in plasma and/or positive charges induced from radicals may be charged or accumulated on a surface of the horizontal semiconductor layer 100 exposed to the vertical holes VH. Accordingly, the well regions 100a of the horizontal semiconductor layer 100 may have an increased potential.

In some embodiments, the semiconductor substrate 1 may be placed on a supporter (not shown) of semiconductor fabrication equipment when a three-dimensional semiconductor device is manufactured, and may be supplied with a ground voltage from the supporter when the anisotropic etching process is performed to form the vertical holes VH. According to exemplary embodiments, since the horizontal semiconductor layer 100 is a single continuous layer and in contact with the edge top surface of the semiconductor substrate 1, the accumulated positive charges may be discharged from the horizontal semiconductor layer 100 through the semiconductor substrate 1 when the vertical holes VH are formed. For example, when the anisotropic etching process is performed, the well regions 100a may have an increased potential due to the positive charges accumulated on the surface of the horizontal semiconductor layer 100, such that a reverse bias may be applied to PN junctions between the first to fourth well regions 100a1 to 100a4. In this case, a reverse leakage current of the PN junction may inject the accumulated positive charges from the horizontal semiconductor layer 100 into the semiconductor substrate 1. As such, since a ground voltage can be applied to the horizontal semiconductor layer 100 consisting of a single layer on the entire surface of the semiconductor substrate 1 when the vertical holes VH are formed, the horizontal semiconductor layer 100 may be prevented from arcing resulting from the positive charges accumulated in the horizontal semiconductor layer 100.

As illustrated in FIG. 25, the horizontal semiconductor layer 100 may be in direct contact with the hardmask layer MP on the edge of the semiconductor substrate 1. When the hardmask layer MP includes an amorphous carbon layer (ACL), negative charges may be charged or accumulated in the amorphous carbon layer during the anisotropic etching process using plasma. In this case, when the hardmask layer MP is in contact with the horizontal semiconductor layer 100, the negative charges of the hardmask layer MP may counterbalance the positive charges accumulated in the horizontal semiconductor layer 100.

Referring to FIG. 27, vertical structures VS may be formed in the vertical holes VH. The vertical structures VS may, as discussed above, include a semiconductor material or a conductive material.

The formation of the vertical structures VS may include forming a semiconductor spacer to expose the horizontal semiconductor layer 100 and to cover sidewalls of the vertical holes VH and forming a semiconductor body connected to the horizontal semiconductor layer 100. The vertical structures VS may include silicon (Si), germanium (Ge), or a mixture thereof, and may be an impurity-doped semiconductor or an undoped intrinsic semiconductor. The vertical structures VS may be connected to the well regions 100a of the horizontal semiconductor layer 100. The vertical structure VS may have a conductive pad VSCP at or on its upper end. The conductive pad VSCP may be an impurity-doped region or may consist of a conductive material.

Before the vertical structures VS are formed in the vertical holes VH, as discussed with reference to FIGS. 7A and 7B, a vertical insulation pattern VP may be formed in the vertical hole VH. The vertical insulation pattern VP may consist of a single thin layer or a plurality of thin layers. In some embodiments, the vertical insulation pattern VP may be a portion of a data storage layer.

In other embodiments, as illustrated in FIGS. 6B and 7B, the formation of the vertical structures VS may include forming a lower semiconductor pattern LSP to fill a lower portion of the vertical hole VH, forming the vertical insulation pattern VP in the vertical hole VH provided with the lower semiconductor pattern LSP, and forming an upper semiconductor pattern USP connected to the lower semiconductor pattern LSP, in the vertical hole VH provided with the vertical insulation pattern VP.

After the vertical structures VS are formed, conductive layers may replace the sacrificial layers (see SL of FIG. 23) of the mold structures (see 120 of FIG. 24) such that stack structures ST may be formed to include electrodes (see EL of FIG. 6A) vertically stacked on the horizontal semiconductor layer 100.

In more detail, after the vertical structures VS are formed, the mold structures 120 may be patterned to form trenches that have linear shapes spaced apart from the vertical structures VS. The trenches may expose sidewalls of the insulation layers ILD and of the sacrificial layers SL included in the mold structures 120.

The sacrificial layers SL exposed to the trenches may be removed to form gate spaces between the insulation layers ILD. The gate spaces may be formed by isotropically etching the sacrificial layers SL using an etch recipe that has an etch selectivity to the insulation layers ILD, the vertical structures VS, and the horizontal semiconductor layer 100. For example, when the sacrificial layers SL are silicon nitride layers and the insulation layers ILD are silicon oxide layers, the isotropic etching process may be performed using an etchant inclusive of phosphoric acid.

The electrodes EL may be formed in the gate spaces. The electrodes EL may partially or completely fill the gate spaces. Each of the electrodes EL may include a barrier metal layer and a metal layer that are sequentially deposited. The barrier metal layer may include a metal nitride layer such as TiN, TaN, or WN. The metal layer may include a metallic material such as W, Al, Ti, Ta, Co, or Cu.

Before the electrodes EL are formed, as discussed with reference to FIGS. 7A and 7B, a horizontal insulation pattern HP may be formed to conformally cover inner sidewalls of the gate spaces. The horizontal insulation pattern HP may be a portion of a data storage layer in a NAND Flash memory transistor.

When the electrodes EL are formed, the stack structure ST may be formed on each of the well regions 100a of the horizontal semiconductor layer 100 and may have a stepwise structure on an edge of each well region 100a.

As discussed with reference to FIGS. 5, 6A, and 6B, common source regions CSR may be formed in the semiconductor substrate 1 exposed to the trenches. The common source regions CSR may include, for example, n-type impurities (e.g., arsenic (As) or phosphorous (P)). Common source plugs CSP may be formed to be coupled to the common source regions CSR.

Referring to FIG. 28, an interlayer dielectric layer (not designated by a reference numeral) may be formed to cover the stack structures ST and the upper buried insulation layer 150, and then cell contact plugs CPLG, well contact plugs (not shown), and connection contact plugs PPLG may be formed to penetrate the interlayer dielectric layer and the upper buried insulation layer 150. In some embodiments, the contact plugs CPLG may each be a single homogeneous unit extending from the top surface of the upper buried insulating layer 150 to the top surface of the electrode EL to which the contact plug CPLG is connected. Therefore, the peripheral logic structure PS may be provided thereon with a cell array structure CS. The connection contact plugs PPLG connected to the peripheral logic structure PS may be formed, as discussed with reference to FIGS. 8A to 8D, in the openings (see OP of FIGS. 8A to 8D) of the horizontal semiconductor layer 100.

A cutting or sawing machine may be used to cut the semiconductor substrate 1 along a scribe line region, and thus three-dimensional semiconductor devices formed on the semiconductor substrate 1 may be divided into a plurality of semiconductor chips.

According to exemplary embodiments, a plurality of cell array structures may be formed on a single horizontal semiconductor layer. As a result, the horizontal semiconductor layer may be prevented from arcing resulting from positive charges that are charged or accumulated in the horizontal semiconductor layer when an etching process is performed to form three-dimensional semiconductor devices.

Moreover, a second-conductivity separation layer may electrically separate first-conductivity well regions from each other on the single semiconductor layer. Consequently, the well regions may independently experience an erase operation of a three-dimensional semiconductor device including NAND Flash memory.

Although the present invention has been described in connection with the exemplary embodiments illustrated in the accompanying drawings, it will be understood to those skilled in the art that various changes and modifications may be made without departing from the technical spirit and essential feature of the disclosed concepts. It will be apparent to those skilled in the art that various substitution, modifications, and changes may be thereto without departing from the scope and spirit of the disclosed concepts.

Claims

1. A three-dimensional semiconductor device, comprising:

a horizontal semiconductor layer including a plurality of well regions having a first conductivity and a separation impurity region having a second conductivity, the separation impurity region being between and in contact with the plurality of well regions; and

a plurality of cell array structures provided on the plurality of well regions of the horizontal semiconductor layer, respectively,

wherein each of the cell array structures comprises: a stack structure including a plurality of stacked electrodes stacked in a vertical direction on a top surface of the horizontal semiconductor layer; and a plurality of vertical structures penetrating the stack structure and connected to a corresponding one of the well regions.

2. The three-dimensional semiconductor device of claim 1, wherein the horizontal semiconductor layer includes at least two PN junctions formed by the separation impurity region and two well regions that are adjacent to each other and have the separation impurity region therebetween.

3. The three-dimensional semiconductor device of claim 1, wherein the horizontal semiconductor layer includes at least two PN junctions formed by the separation impurity region and portions of the well regions in contact with the separation impurity region.

4. The three-dimensional semiconductor device of claim 1, wherein the separation impurity region comprises a pair of impurity regions having the second conductivity, and

wherein the pair of impurity regions are spaced apart from each other and disposed between well regions adjacent to each other.

5. The three-dimensional semiconductor device of claim 4, further comprising:

a dummy impurity region between the pair of impurity regions and having the first conductivity,

wherein the horizontal semiconductor layer includes a plurality of PN junctions formed by the dummy impurity region and the pair of impurity regions.

6. The three-dimensional semiconductor device of claim 5, wherein an impurity concentration of the first conductivity is less in the dummy impurity region than an impurity concentration of the first conductivity in the well regions.

7. The three-dimensional semiconductor device of claim 1, wherein the separation impurity region is disposed between cell array structures adjacent to each other.

8. The three-dimensional semiconductor device of claim 1, wherein each of the cell array structures comprises a plurality of NAND cell strings that extend in the vertical direction to the top surface of the horizontal semiconductor layer.

9. The three-dimensional semiconductor device of claim 1, wherein the horizontal semiconductor layer is a single layer extending in first and second directions perpendicular to one another.

10. The three-dimensional semiconductor device of claim 1,

wherein the plurality of well regions are arranged along first and second directions that are perpendicular to each other and parallel to the top surface of the horizontal semiconductor layer, and

wherein the separation impurity region extends in the second direction between well regions adjacent to each other in the first direction, and extends in the first direction between well regions adjacent to each other in the second direction.

11. The three-dimensional semiconductor device of claim 1,

wherein the plurality of well regions are arranged along first and second directions that are perpendicular to each other and parallel to the top surface of the horizontal semiconductor layer, and

wherein the separation impurity region has a width in the first direction less than that of one of the plurality of well regions.

12. The three-dimensional semiconductor device of claim 1,

wherein the separation impurity region comprises first and second separation impurity regions that are provided between well regions adjacent to each other in a first direction and are spaced apart from each other in a second direction perpendicular to the first direction, and

wherein the horizontal semiconductor layer comprises an opening between the first and second separation impurity regions.

13. The three-dimensional semiconductor device of claim 1, further comprising:

a peripheral logic structure including a semiconductor substrate, peripheral logic circuits on the semiconductor substrate, and a lower buried insulation layer covering the peripheral logic circuits,

wherein the horizontal semiconductor layer is disposed on a top surface of the lower buried insulation layer.

14. The three-dimensional semiconductor device of claim 13, further comprising:

an upper buried insulation layer on the horizontal semiconductor layer and covering the stack structure,

wherein the horizontal semiconductor layer comprises an opening between well regions adjacent to each other in one direction and exposing the lower buried insulation layer, the opening of the horizontal semiconductor layer being filled with the upper buried insulation layer.

15. A three-dimensional semiconductor device, comprising:

a peripheral logic structure including a peripheral logic circuit integrated on a semiconductor substrate;

a horizontal semiconductor layer on the peripheral logic structure and including a plurality of well regions and a separation impurity region between adjacent well regions, the plurality of well regions being doped with first conductivity impurities and the separation impurity region being doped with second conductivity impurities; and

a plurality of cell array structures on corresponding well regions of the horizontal semiconductor layer, each of the cell array structures including a plurality of three-dimensionally arranged memory cells.

16. The three-dimensional semiconductor device of claim 15, wherein the plurality of well regions and the separation impurity region overlap the peripheral logic circuit, when viewed in a plan view.

17. The three-dimensional semiconductor device of claim 15, wherein the horizontal semiconductor layer is a single layer extending in first and second directions that are perpendicular to each other and parallel to a top surface of the semiconductor substrate.

18. The three-dimensional semiconductor device of claim 15,

wherein the well regions are arranged along first and second directions perpendicular to each other, and

wherein the separation impurity region is provided between well regions adjacent to each other in the first direction and between well regions adjacent to each other in the second direction.

19. The three-dimensional semiconductor device of claim 15,

wherein the well regions are arranged along first and second directions perpendicular to each other, and

wherein the separation impurity region has a width in the first direction less than a width of each of the well regions.

20. The three-dimensional semiconductor device of claim 15,

wherein the well regions are spaced apart from each other in a first direction,

wherein the separation impurity region comprises first and second impurity regions spaced apart from each other in the first direction, and

wherein the three-dimensional semiconductor device further comprises a dummy impurity region between the first and second impurity regions and doped with the first conductivity impurities.

21.-25. (canceled)